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VSMY3850-GS18

Infrared Emitting Diode

The VSMY3850-GS18 is a infrared emitting diode from Vishay Intertechnology. View the full VSMY3850-GS18 datasheet below including key specifications.

VSMY3850-GS18 shares its datasheet with VSMY3850-GS08, whose page lists every part number it covers.

Official VSMY3850-GS18 datasheet (PDF) — the source this page was extracted from.

Category

Diodes

Package

PLCC-2

VSMY3850-GS18 Key Specifications

ParameterValue
Rise Fall Time10 ns
Forward Current100 mA (continuous)
Forward Voltage1.6 V to 2.0 V (at 100 mA)
Peak Wavelength850 nm
Power Dissipation200 mW
Radiant Intensity12 mW/sr to 25 mW/sr (at 100 mA)
Package Dimensions3.5 x 2.8 x 1.75 mm
Angle Of Half Intensity± 60°
Pulse Peak Forward Current200 mA
Operating Temperature Range-40 °C to +85 °C

VSMY3850-GS18 Overview

Part: VSMY3850 — Vishay

Type: High Speed Infrared Emitting Diode

Description: 850 nm surface-emitter infrared LED in a PLCC-2 package delivering 17 mW/sr typical radiant intensity at 100 mA forward current with 10 ns rise and fall times.

Operating Conditions:

  • Operating temperature: -40 to +85 °C

Absolute Maximum Ratings:

  • Max supply voltage: 5 V (Reverse voltage)
  • Max continuous current: 100 mA (Forward current)
  • Max junction/storage temperature: 100 °C (Junction temperature), -40 to +100 °C (Storage temperature)

Key Specs:

  • Peak wavelength: 850 nm typ. (840 nm min., 870 nm max. at IF = 100 mA)
  • Forward voltage: 1.6 V typ., 2.0 V max. (IF = 100 mA, tp = 20 ms); 2.9 V typ. (IF = 1 A, tp = 100 μs)
  • Radiant intensity: 17 mW/sr typ. (12 mW/sr min., 25 mW/sr max. at IF = 100 mA, tp = 20 ms); 150 mW/sr typ. (IF = 1 A, tp = 100 μs)
  • Radiant power: 55 mW typ. (IF = 100 mA, tp = 20 ms)
  • Angle of half intensity: ±60°
  • Rise time / Fall time: 10 ns typ. / 10 ns typ. (IF = 100 mA)
  • Spectral bandwidth: 30 nm typ. (IF = 30 mA)
  • Power dissipation: 200 mW max.

Features:

  • Surface emitter technology with high radiant power and intensity
  • Angle of half intensity of ±60°
  • Suitable for high pulse current operation
  • High speed switching (10 ns rise and fall times)
  • Moisture sensitivity level MSL 3 (floor life 168 h)
  • Lead (Pb)-free reflow soldering compatible

Applications:

  • Infrared radiation source for illumination with CMOS cameras
  • High speed IR data transmission
  • IR touch panels
  • 3D TV
  • Light curtain

Package:

  • PLCC-2 SMD (3.5 mm x 2.8 mm x 1.75 mm)

VSMY3850-GS18 Features

  • Package type: surface mount
  • Package form: PLCC-2
  • Dimensions (L x W x H in mm): 3.5 x 2.8 x 1.75
  • Peak wavelength: λ p = 850 nm
  • High reliability
  • High radiant power
  • High radiant intensity
  • Angle of half intensity: ϕ = ± 60°
  • Suitable for high pulse current operation
  • Floor life: 168 h, MSL 3, acc. J-STD-020
  • Lead (Pb)-free reflow soldering
  • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912

VSMY3850-GS18 Applications

Infrared radiation source for operation with CMOS cameras (illumination)

  • High speed IR data transmission
  • IR touch panels
  • 3D TV
  • Light curtain
PRODUCT SUMMARYPRODUCT SUMMARYPRODUCT SUMMARYPRODUCT SUMMARYPRODUCT SUMMARY
COMPONENTI e (mW/sr)ϕ (deg)λ P (nm)t r (ns)
VSMY385017± 6085010

VSMY3850-GS18 Package Information

Drawing-No.: 6.541-5067.02-4

I ss

ue: 5; 23.09.13

Dimen s ion s : Reflow and vapor pha s e (wave s oldering)

Variants on the same datasheet

These parts have exact links to the same datasheet. They are candidates to compare, not verified drop-in replacements; check package, pinout and electrical limits.

Part NumberManufacturerPackage
VSMY3850Vishay IntertechnologyPLCC-2
VSMY3850-GS08Vishay Intertechnology2-SMD, J-Lead

Other Diodes

  • CDSOT23-SM712 – Bourns Inc., Surface Mount TVS Diode
  • SS34HE – Vishay Intertechnology, Schottky Barrier Rectifier
  • BSD3A311V – Brightking, ESD Protection Diode
  • CH213K – WCH, Low Dropout Ideal Diode Chip
  • VMNN110CMS-TR – Stanley Electric, Infrared Emitting Diode
  • ESD5Z2.5T1G – onsemi, ESD Protection TVS Diode
  • PMEG4010CEJ – Nexperia, Schottky Barrier Rectifier
  • USBLC6-2SC6 – STMicroelectronics, ESD Protection Device

All Diodes datasheetsAll Vishay Intertechnology datasheets (32)

Data on this page is extracted from publicly available manufacturer datasheets using automated tools including AI. It may contain errors or omissions. Always verify specifications against the official manufacturer datasheet before making design or purchasing decisions. See our Terms of Service. Rights holders can submit a takedown request.

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