VSMA1094250X02
Infrared Emitting DiodeThe VSMA1094250X02 is a infrared emitting diode from Vishay Intertechnology. View the full VSMA1094250X02 datasheet below including key specifications.
Official VSMA1094250X02 datasheet (PDF) — the source this page was extracted from.
Manufacturer
Vishay IntertechnologyCategory
DiodesPackage
3-SMD, No Lead
Lifecycle
Production (Last Updated: 2 years ago)
VSMA1094250X02 Key Specifications
| Parameter | Value |
|---|---|
| Current - DC Forward (If) (Max) | 1.5A |
| Grade | Automotive |
| Introduction Date | 2024-04-30 |
| Lifecycle Status | Production (Last Updated: 2 years ago) |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 125°C (TA) |
| Orientation | Top View |
| Package / Case | 3-SMD, No Lead |
| Qualification | AEC-Q102 |
| Radiant Intensity (Ie) Min @ If | 1660mW/sr @ 1.5A |
| RoHS | Compliant |
| Type | Infrared (IR) |
| Viewing Angle | 56° |
| Viewing Angle | 28 ° |
| Forward Voltage (Vf) | 3.1V |
| Wavelength | 940nm |
| Wavelength | 940 nm |
VSMA1094250X02 Overview
Part: VSMA1094250X02 — Vishay
Type: High Power Infrared Emitting Diode
Description: 940 nm high-power infrared emitting diode featuring a double-stack emitter chip supporting up to 1.5 A DC and 5 A pulsed operation.
Operating Conditions:
- Operating temperature: -40 to +125 °C
- Minimum forward current: 100 mA
Absolute Maximum Ratings:
- Reverse voltage: 5 V
- Forward current: 1.5 A
- Surge forward current: 5 A (tp = 100 μs)
- Power dissipation: 5 W
- Junction temperature: 145 °C
- Storage temperature range: -40 to +125 °C
- Soldering temperature: 260 °C
Key Specs:
- Forward voltage: 2.9 V typ., 3.1 V max. (IF = 1 A, tp = 100 μs)
- Forward voltage: 3.1 V typ., 3.35 V max. (IF = 1.5 A, tp = 100 μs)
- Peak wavelength: 945 nm typ. (IF = 1 A, tp = 100 μs)
- Centroid wavelength: 940 nm typ. (IF = 1 A, tp = 100 μs)
- Spectral bandwidth: 39 nm typ. (IF = 1 A, tp = 100 μs)
- Radiant intensity: 1350 mW/sr typ. (IF = 1 A, tp = 100 μs)
- Radiant intensity: 2000 mW/sr typ. (IF = 1.5 A, tp = 100 μs)
- Radiant power: 2125 mW typ. (IF = 1.5 A, tp = 100 μs)
- Angle of half intensity: ±28°
- Switching times: tr = 10 ns, tf = 13 ns typ. (IF = 1 A, RL = 50 Ω)
Features:
- High power SMD package with lens
- Double stack emitter chip for high radiant power
- AEC-Q102 qualified
- Low thermal resistance: 5 K/W < RthJSP < 9 K/W
- ESD protection up to 5 kV (ANSI / ESDA / JEDEC JS-001)
- Moisture sensitivity level MSL 3 (floor life 168 h)
Applications:
- Driver and occupant monitoring
- Eye tracking
- Safety and security, CCTV
Package:
- High power SMD with lens (3.4 mm x 3.4 mm x 2.9 mm)
VSMA1094250X02 Features
- Package type: surface-mount
- Package form: high power SMD with lens
- Dimensions (L x W x H in mm): 3.4 x 3.4 x 2.9
- Peak wavelength: λ p = 945 nm
- AEC-Q102 qualified
- Angle of half intensity: ϕ = ± 28°
- Designed for high drive currents: up to 1.5 A (DC) and up to 5 A (pulsed)
- Low thermal resistance: 5 K/W < RthJSP < 9 K/W
- ESD: up to 5 kV (according to ANSI / ESDA / JEDEC ® JS-001)
- Floor life: 168 h, MSL 3, according to J-STD-020E
- Lead (Pb)-free reflow soldering
- Material categorization: for definitions of compliance please see www.vishay.com/doc?99912
VSMA1094250X02 Applications
- Driver and occupant monitoring
- Eye tracking
- Safety and security, CCTV
VSMA1094250X02 Package Information
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- ESD5Z2.5T1G – onsemi, ESD Protection TVS Diode
- PMEG4010CEJ – Nexperia, Schottky Barrier Rectifier
- USBLC6-2SC6 – STMicroelectronics, ESD Protection Device
All Diodes datasheetsAll Vishay Intertechnology datasheets (32)
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