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VSMA1094250X02

Infrared Emitting Diode

The VSMA1094250X02 is a infrared emitting diode from Vishay Intertechnology. View the full VSMA1094250X02 datasheet below including key specifications.

Official VSMA1094250X02 datasheet (PDF) — the source this page was extracted from.

Category

Diodes

Package

3-SMD, No Lead

Lifecycle

Production (Last Updated: 2 years ago)

VSMA1094250X02 Key Specifications

ParameterValue
Current - DC Forward (If) (Max)1.5A
GradeAutomotive
Introduction Date2024-04-30
Lifecycle StatusProduction (Last Updated: 2 years ago)
Mounting TypeSurface Mount
Operating Temperature-40°C ~ 125°C (TA)
OrientationTop View
Package / Case3-SMD, No Lead
QualificationAEC-Q102
Radiant Intensity (Ie) Min @ If1660mW/sr @ 1.5A
RoHSCompliant
TypeInfrared (IR)
Viewing Angle56°
Viewing Angle28 °
Forward Voltage (Vf)3.1V
Wavelength940nm
Wavelength940 nm

VSMA1094250X02 Overview

Part: VSMA1094250X02 — Vishay

Type: High Power Infrared Emitting Diode

Description: 940 nm high-power infrared emitting diode featuring a double-stack emitter chip supporting up to 1.5 A DC and 5 A pulsed operation.

Operating Conditions:

  • Operating temperature: -40 to +125 °C
  • Minimum forward current: 100 mA

Absolute Maximum Ratings:

  • Reverse voltage: 5 V
  • Forward current: 1.5 A
  • Surge forward current: 5 A (tp = 100 μs)
  • Power dissipation: 5 W
  • Junction temperature: 145 °C
  • Storage temperature range: -40 to +125 °C
  • Soldering temperature: 260 °C

Key Specs:

  • Forward voltage: 2.9 V typ., 3.1 V max. (IF = 1 A, tp = 100 μs)
  • Forward voltage: 3.1 V typ., 3.35 V max. (IF = 1.5 A, tp = 100 μs)
  • Peak wavelength: 945 nm typ. (IF = 1 A, tp = 100 μs)
  • Centroid wavelength: 940 nm typ. (IF = 1 A, tp = 100 μs)
  • Spectral bandwidth: 39 nm typ. (IF = 1 A, tp = 100 μs)
  • Radiant intensity: 1350 mW/sr typ. (IF = 1 A, tp = 100 μs)
  • Radiant intensity: 2000 mW/sr typ. (IF = 1.5 A, tp = 100 μs)
  • Radiant power: 2125 mW typ. (IF = 1.5 A, tp = 100 μs)
  • Angle of half intensity: ±28°
  • Switching times: tr = 10 ns, tf = 13 ns typ. (IF = 1 A, RL = 50 Ω)

Features:

  • High power SMD package with lens
  • Double stack emitter chip for high radiant power
  • AEC-Q102 qualified
  • Low thermal resistance: 5 K/W < RthJSP < 9 K/W
  • ESD protection up to 5 kV (ANSI / ESDA / JEDEC JS-001)
  • Moisture sensitivity level MSL 3 (floor life 168 h)

Applications:

  • Driver and occupant monitoring
  • Eye tracking
  • Safety and security, CCTV

Package:

  • High power SMD with lens (3.4 mm x 3.4 mm x 2.9 mm)

VSMA1094250X02 Features

  • Package type: surface-mount
  • Package form: high power SMD with lens
  • Dimensions (L x W x H in mm): 3.4 x 3.4 x 2.9
  • Peak wavelength: λ p = 945 nm
  • AEC-Q102 qualified
  • Angle of half intensity: ϕ = ± 28°
  • Designed for high drive currents: up to 1.5 A (DC) and up to 5 A (pulsed)
  • Low thermal resistance: 5 K/W < RthJSP < 9 K/W
  • ESD: up to 5 kV (according to ANSI / ESDA / JEDEC ® JS-001)
  • Floor life: 168 h, MSL 3, according to J-STD-020E
  • Lead (Pb)-free reflow soldering
  • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

VSMA1094250X02 Applications

  • Driver and occupant monitoring
  • Eye tracking
  • Safety and security, CCTV

VSMA1094250X02 Package Information

Other Diodes

  • CDSOT23-SM712 – Bourns Inc., Surface Mount TVS Diode
  • VMNN110CMS-TR – Stanley Electric, Infrared Emitting Diode
  • SS34HE – Vishay Intertechnology, Schottky Barrier Rectifier
  • BSD3A311V – Brightking, ESD Protection Diode
  • CH213K – WCH, Low Dropout Ideal Diode Chip
  • ESD5Z2.5T1G – onsemi, ESD Protection TVS Diode
  • PMEG4010CEJ – Nexperia, Schottky Barrier Rectifier
  • USBLC6-2SC6 – STMicroelectronics, ESD Protection Device

All Diodes datasheetsAll Vishay Intertechnology datasheets (32)

Data on this page is extracted from publicly available manufacturer datasheets using automated tools including AI. It may contain errors or omissions. Always verify specifications against the official manufacturer datasheet before making design or purchasing decisions. See our Terms of Service. Rights holders can submit a takedown request.

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