TPD4EUSB30DQAR
ESD Protection Diode ArrayThe TPD4EUSB30DQAR is a esd protection diode array from Texas Instruments. View the full TPD4EUSB30DQAR datasheet below including key specifications, electrical characteristics, absolute maximum ratings.
Official TPD4EUSB30DQAR datasheet (PDF) — the source this page was extracted from.
TPD4EUSB30DQAR Key Specifications
| Parameter | Value |
|---|---|
| Applications | General Purpose |
| Current - Peak Pulse (10/1000µs) | 1A (8/20µs) |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Package / Case | 10-UFDFN |
| Power - Peak Pulse | 45W |
| Power Line Protection | Yes |
| Supplier Device Package | 10-USON (2.5x1) |
| Type | Steering (Rail to Rail) |
| Unidirectional Channels | 4 |
| Voltage - Breakdown (Min) | 7V |
| Voltage - Clamping (Max) @ Ipp | 8V |
| Voltage - Reverse Standoff (Typ) | 5.5V (Max) |
TPD4EUSB30DQAR Overview
Part: TPD4EUSB30DQAR (TPD4EUSB30 in DQA package) — Texas Instruments
Type: 4-Channel TVS ESD Protection Diode Array for USB 3.0
Description: 4-channel (2 differential pairs) uni-directional TVS ESD protection array for 5 Gbps USB 3.0 lines, with 0.8 pF typical IO-to-GND capacitance, 0.6 Ω typical dynamic resistance and IEC 61000-4-2 Level 4 contact ESD protection.
Operating Conditions:
- Operating voltage (D+/D- pins): 0–5.5 V (TPD4EUSB30)
- Operating free-air temperature: -40 to 85 °C
- Reverse stand-off voltage VRWM: 5.5 V max
Absolute Maximum Ratings:
- IO voltage (D+ and D- pins), TPD4EUSB30: 0 to 6 V
- IEC 61000-4-5 surge current (tp = 8/20 μs): 5 A
- IEC 61000-4-5 surge peak power (tp = 8/20 μs): 45 W
- Storage temperature: -65 to 125 °C
Key Specs:
- Clamp voltage VCLAMP: 8 V max (IIO = 1 A, D+/D- to GND)
- Breakdown voltage VBR: 7 V min (IIO = 1 mA)
- Dynamic resistance Rdyn: 0.6 Ω typ (I = 1 A)
- IO-to-GND capacitance (DQA): 0.8 pF typ (VIO = 2.5 V, f = 100 kHz)
- IO-to-IO capacitance: 0.05 pF typ (VIO = 2.5 V, f = 100 kHz)
- IO leakage current: 0.01 μA typ, 0.1 μA max (VIO = 2.5 V)
- Diode forward voltage VD: 0.6 / 0.8 / 0.95 V min/typ/max (VIO = 2.5 V, ID = 8 mA)
- ESD ratings: HBM 2500 V, CDM 1500 V, IEC 61000-4-2 contact ±8 kV, air-gap 9 kV (TPD4EUSB30)
- Insertion loss -3 dB bandwidth: 7.4 Gbps (typical characteristics plot)
- RθJA: 162.2 °C/W (DQA)
Features:
- Supports USB 3.0 data rates (5 Gbps)
- IEC 61000-4-2 ESD protection (Level 4 contact)
- IEC 61000-4-5 surge protection, 5 A (8/20 μs)
- Low capacitance
- Space-saving DQA package
- Flow-through pin mapping
Applications:
- Notebooks
- Set-top boxes
- DVD players
- Media players
- Portable computers
Package:
- DQA: 10-pin USON, 2.50 mm × 1.00 mm (nominal)
TPD4EUSB30DQAR Features
- Supports USB 3.0 data rates (5 Gbps)
- IEC 61000-4-2 ESD protection (level 4 contact)
- IEC 61000-4-5 surge protection
- -5 A (8/20 μs)
- Low capacitance
- -DRT: 0.7 pF (typical)
- -DQA: 0.8 pF (typical)
- Dynamic resistance: 0.6 Ω (typical)
- Space-saving DRT, DQA packages
- Flow-through pin mapping
TPD4EUSB30DQAR Applications
- Notebooks
- Set-top boxes
- DVD players
- Media players
- Portable computers
TPD4EUSB30DQAR Pin Configuration
Figure 5-1. DRT Package 3-Pin SOT Top View
Figure 5-2. DQA Package 10-Pin USON Top View
Table 5-1. Pin Functions
| PIN - NAME | PIN - DRT | PIN - DQA | TYPE | DESCRIPTION |
|---|---|---|---|---|
| D1+ | 1 | 1 | ESD port | High-speed ESD clamp, provides ESD protection to the high-speed differential data lines. |
| D1- | 2 | 2 | ESD port | High-speed ESD clamp, provides ESD protection to the high-speed differential data lines. |
| D2+ | - | 4 | ESD port | High-speed ESD clamp, provides ESD protection to the high-speed differential data lines. |
| D2- | - | 5 | ESD port | High-speed ESD clamp, provides ESD protection to the high-speed differential data lines. |
| GND | 3 | 3, 8 | GND | Ground |
| N.C. | - | 6, 7, 9, 10 | - | Not normally connected |
TPD4EUSB30DQAR Electrical Characteristics
over operating free-air temperature range (unless otherwise noted)
| PARAMETER | PARAMETER | TEST CONDITIONS | TEST CONDITIONS | MIN | TYP | MAX | UNIT |
|---|---|---|---|---|---|---|---|
| V RWM | Reverse stand-off voltage (D+ and D- pins) | TPD2EUSB30, TPD4EUSB30 | TPD2EUSB30, TPD4EUSB30 | 5.5 | V | ||
| V RWM | Reverse stand-off voltage (D+ and D- pins) | TPD2EUSB30A | TPD2EUSB30A | 3.6 | V | ||
| V clamp | Clamp voltage | D+,D- pins to ground, | I IO = 1 A | 8 | V | ||
| I IO | Current from IO port to supply pins | V IO = 2.5 V, | I D = 8 mA | 0.01 | 0.1 | μA | |
| V D | Diode forward voltage | D+,D- pins, lower clamp diode, | V IO = 2.5 V, I D = 8 mA | 0.6 | 0.8 | 0.95 | V |
| R dyn | Dynamic resistance | D+,D- pins | I = 1 A | 0.6 | Ω | ||
| C IO-IO | Capacitance IO to IO | D+,D- pins | V IO = 2.5 V; ƒ = 100 kHz | 0.05 | pF | ||
| C IO-GND | Capacitance IO to GND | D+,D- pins (DRT) | V IO = 2.5 V; ƒ = 100 kHz | 0.7 | pF | ||
| C IO-GND | Capacitance IO to GND | D1+, D1-, D2+, D2- (DQA ) | V IO = 2.5 V; ƒ = 100 kHz | 0.8 | pF | ||
| V BR | Break-down voltage, TPD2EUSB30, TPD4EUSB30 | I IO = 1 mA | 7 | V | |||
| V BR | Break-down voltage, TPD2EUSB30A | I IO = 1 mA | 4.5 | V |
TPD4EUSB30DQAR Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted) (1)
| MIN | MAX | UNIT | ||
|---|---|---|---|---|
| IO | (D+ and D- pins) TPD2EUSB30, TPD4EUSB30 | 0 | 6 | V |
| voltage | TPD2EUSB30A | 0 | 4 | V |
| IEC | 61000-4-5 surge current (t p = 8/20 μs) D+, D- pins | 5 | A | |
| IEC 61000-4-5 | surge peak power (t p = 8/20 μs) D+, D- pins | 45 | W | |
| T A | Operating free-air temperature | -40 | 85 | °C |
| T stg | Storage temperature | -65 | 125 | °C |
TPD4EUSB30DQAR Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
| MIN | MAX | UNIT | ||
|---|---|---|---|---|
| T A operating free-air temperature | -40 | 85 | °C | |
| Operating Voltage | TPD2EUSB30, TPD4EUSB30 | 0 | 5.5 | V |
| Operating Voltage | TPD2EUSB30A | 0 | 3.6 | V |
TPD4EUSB30DQAR Thermal Information
| THERMAL METRIC (1) | THERMAL METRIC (1) - Junction-to-ambient thermal resistance | TPD2EUSB30 DRT (SOT) 3 PINS | TPD2EUSB30A DRT (SOT) - 3 PINS | TPD4EUSB30 DQA (USON) PINS - 10 | UNIT |
|---|---|---|---|---|---|
| R θJA | 610.2 | 610.2 | 162.2 | °C/W | |
| R θJC(top) | Junction-to-case (top) thermal resistance | 288.0 | 288.0 | 128.3 | °C/W |
| R θJB | Junction-to-board thermal resistance | 118.4 | 118.4 | 56.7 | °C/W |
| ψ JT | Junction-to-top characterization parameter | 20.2 | 20.2 | 13.8 | °C/W |
| ψ JB | Junction-to-board characterization parameter | 116.4 | 116.4 | 56.6 | °C/W |
| R θJC(bot) | Junction-to-case (bottom) thermal resistance | N/A | N/A | 8.1 | °C/W |
TPD4EUSB30DQAR Typical Application
The TPDxEUSB30/A family is a family of diode array type transient voltage suppressors (TVS) which are typically used to provide a path to ground for dissipating ESD events on hi-speed signal lines between a human interface connector and a system. As the current from ESD passes through the TVS, only a small voltage drop is present across the diode. This is the voltage presented to the protected IC. The low R DYN of the triggered TVS holds this voltage, V CLAMP, to a tolerable level to the protected IC.
Variants on the same datasheet
These parts have exact links to the same datasheet. They are candidates to compare, not verified drop-in replacements; check package, pinout and electrical limits.
| Part Number | Manufacturer | Package |
|---|---|---|
| TPD4EUSB30DQAR-ES | Texas Instruments | DFN2510-10L |
Other Diodes
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- CH213K – WCH, Low Dropout Ideal Diode Chip
- VMNN110CMS-TR – Stanley Electric, Infrared Emitting Diode
- ESD5Z2.5T1G – onsemi, ESD Protection TVS Diode
- PMEG4010CEJ – Nexperia, Schottky Barrier Rectifier
- BAT54S – Diotec Semiconductor, Dual Schottky Barrier Diode (Series)
All Diodes datasheetsAll Texas Instruments datasheets (2,442)
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