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TPD4EUSB30DQAR

ESD Protection Diode Array

The TPD4EUSB30DQAR is a esd protection diode array from Texas Instruments. View the full TPD4EUSB30DQAR datasheet below including key specifications, electrical characteristics, absolute maximum ratings.

Official TPD4EUSB30DQAR datasheet (PDF) — the source this page was extracted from.

Manufacturer

Texas Instruments

Category

Diodes

Package

10-UFDFN

Lifecycle

Active

TPD4EUSB30DQAR Key Specifications

ParameterValue
ApplicationsGeneral Purpose
Current - Peak Pulse (10/1000µs)1A (8/20µs)
Mounting TypeSurface Mount
Operating Temperature-40°C ~ 85°C (TA)
Package / Case10-UFDFN
Power - Peak Pulse45W
Power Line ProtectionYes
Supplier Device Package10-USON (2.5x1)
TypeSteering (Rail to Rail)
Unidirectional Channels4
Voltage - Breakdown (Min)7V
Voltage - Clamping (Max) @ Ipp8V
Voltage - Reverse Standoff (Typ)5.5V (Max)

TPD4EUSB30DQAR Overview

Part: TPD4EUSB30DQAR (TPD4EUSB30 in DQA package) — Texas Instruments

Type: 4-Channel TVS ESD Protection Diode Array for USB 3.0

Description: 4-channel (2 differential pairs) uni-directional TVS ESD protection array for 5 Gbps USB 3.0 lines, with 0.8 pF typical IO-to-GND capacitance, 0.6 Ω typical dynamic resistance and IEC 61000-4-2 Level 4 contact ESD protection.

Operating Conditions:

  • Operating voltage (D+/D- pins): 0–5.5 V (TPD4EUSB30)
  • Operating free-air temperature: -40 to 85 °C
  • Reverse stand-off voltage VRWM: 5.5 V max

Absolute Maximum Ratings:

  • IO voltage (D+ and D- pins), TPD4EUSB30: 0 to 6 V
  • IEC 61000-4-5 surge current (tp = 8/20 μs): 5 A
  • IEC 61000-4-5 surge peak power (tp = 8/20 μs): 45 W
  • Storage temperature: -65 to 125 °C

Key Specs:

  • Clamp voltage VCLAMP: 8 V max (IIO = 1 A, D+/D- to GND)
  • Breakdown voltage VBR: 7 V min (IIO = 1 mA)
  • Dynamic resistance Rdyn: 0.6 Ω typ (I = 1 A)
  • IO-to-GND capacitance (DQA): 0.8 pF typ (VIO = 2.5 V, f = 100 kHz)
  • IO-to-IO capacitance: 0.05 pF typ (VIO = 2.5 V, f = 100 kHz)
  • IO leakage current: 0.01 μA typ, 0.1 μA max (VIO = 2.5 V)
  • Diode forward voltage VD: 0.6 / 0.8 / 0.95 V min/typ/max (VIO = 2.5 V, ID = 8 mA)
  • ESD ratings: HBM 2500 V, CDM 1500 V, IEC 61000-4-2 contact ±8 kV, air-gap 9 kV (TPD4EUSB30)
  • Insertion loss -3 dB bandwidth: 7.4 Gbps (typical characteristics plot)
  • RθJA: 162.2 °C/W (DQA)

Features:

  • Supports USB 3.0 data rates (5 Gbps)
  • IEC 61000-4-2 ESD protection (Level 4 contact)
  • IEC 61000-4-5 surge protection, 5 A (8/20 μs)
  • Low capacitance
  • Space-saving DQA package
  • Flow-through pin mapping

Applications:

  • Notebooks
  • Set-top boxes
  • DVD players
  • Media players
  • Portable computers

Package:

  • DQA: 10-pin USON, 2.50 mm × 1.00 mm (nominal)

TPD4EUSB30DQAR Features

  • Supports USB 3.0 data rates (5 Gbps)
  • IEC 61000-4-2 ESD protection (level 4 contact)
  • IEC 61000-4-5 surge protection
  • -5 A (8/20 μs)
  • Low capacitance
  • -DRT: 0.7 pF (typical)
  • -DQA: 0.8 pF (typical)
  • Dynamic resistance: 0.6 Ω (typical)
  • Space-saving DRT, DQA packages
  • Flow-through pin mapping

TPD4EUSB30DQAR Applications

  • Notebooks
  • Set-top boxes
  • DVD players
  • Media players
  • Portable computers

TPD4EUSB30DQAR Pin Configuration

Figure 5-1. DRT Package 3-Pin SOT Top View

Figure 5-2. DQA Package 10-Pin USON Top View

Table 5-1. Pin Functions

PIN - NAMEPIN - DRTPIN - DQATYPEDESCRIPTION
D1+11ESD portHigh-speed ESD clamp, provides ESD protection to the high-speed differential data lines.
D1-22ESD portHigh-speed ESD clamp, provides ESD protection to the high-speed differential data lines.
D2+-4ESD portHigh-speed ESD clamp, provides ESD protection to the high-speed differential data lines.
D2--5ESD portHigh-speed ESD clamp, provides ESD protection to the high-speed differential data lines.
GND33, 8GNDGround
N.C.-6, 7, 9, 10-Not normally connected

TPD4EUSB30DQAR Electrical Characteristics

over operating free-air temperature range (unless otherwise noted)

PARAMETERPARAMETERTEST CONDITIONSTEST CONDITIONSMINTYPMAXUNIT
V RWMReverse stand-off voltage (D+ and D- pins)TPD2EUSB30, TPD4EUSB30TPD2EUSB30, TPD4EUSB305.5V
V RWMReverse stand-off voltage (D+ and D- pins)TPD2EUSB30ATPD2EUSB30A3.6V
V clampClamp voltageD+,D- pins to ground,I IO = 1 A8V
I IOCurrent from IO port to supply pinsV IO = 2.5 V,I D = 8 mA0.010.1μA
V DDiode forward voltageD+,D- pins, lower clamp diode,V IO = 2.5 V, I D = 8 mA0.60.80.95V
R dynDynamic resistanceD+,D- pinsI = 1 A0.6Ω
C IO-IOCapacitance IO to IOD+,D- pinsV IO = 2.5 V; ƒ = 100 kHz0.05pF
C IO-GNDCapacitance IO to GNDD+,D- pins (DRT)V IO = 2.5 V; ƒ = 100 kHz0.7pF
C IO-GNDCapacitance IO to GNDD1+, D1-, D2+, D2- (DQA )V IO = 2.5 V; ƒ = 100 kHz0.8pF
V BRBreak-down voltage, TPD2EUSB30, TPD4EUSB30I IO = 1 mA7V
V BRBreak-down voltage, TPD2EUSB30AI IO = 1 mA4.5V

TPD4EUSB30DQAR Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted) (1)

MINMAXUNIT
IO(D+ and D- pins) TPD2EUSB30, TPD4EUSB3006V
voltageTPD2EUSB30A04V
IEC61000-4-5 surge current (t p = 8/20 μs) D+, D- pins5A
IEC 61000-4-5surge peak power (t p = 8/20 μs) D+, D- pins45W
T AOperating free-air temperature-4085°C
T stgStorage temperature-65125°C

over operating free-air temperature range (unless otherwise noted)

MINMAXUNIT
T A operating free-air temperature-4085°C
Operating VoltageTPD2EUSB30, TPD4EUSB3005.5V
Operating VoltageTPD2EUSB30A03.6V

TPD4EUSB30DQAR Thermal Information

THERMAL METRIC (1)THERMAL METRIC (1) - Junction-to-ambient thermal resistanceTPD2EUSB30 DRT (SOT) 3 PINSTPD2EUSB30A DRT (SOT) - 3 PINSTPD4EUSB30 DQA (USON) PINS - 10UNIT
R θJA610.2610.2162.2°C/W
R θJC(top)Junction-to-case (top) thermal resistance288.0288.0128.3°C/W
R θJBJunction-to-board thermal resistance118.4118.456.7°C/W
ψ JTJunction-to-top characterization parameter20.220.213.8°C/W
ψ JBJunction-to-board characterization parameter116.4116.456.6°C/W
R θJC(bot)Junction-to-case (bottom) thermal resistanceN/AN/A8.1°C/W

www.ti.com

TPD4EUSB30DQAR Typical Application

The TPDxEUSB30/A family is a family of diode array type transient voltage suppressors (TVS) which are typically used to provide a path to ground for dissipating ESD events on hi-speed signal lines between a human interface connector and a system. As the current from ESD passes through the TVS, only a small voltage drop is present across the diode. This is the voltage presented to the protected IC. The low R DYN of the triggered TVS holds this voltage, V CLAMP, to a tolerable level to the protected IC.

Variants on the same datasheet

These parts have exact links to the same datasheet. They are candidates to compare, not verified drop-in replacements; check package, pinout and electrical limits.

Part NumberManufacturerPackage
TPD4EUSB30DQAR-ESTexas InstrumentsDFN2510-10L

Other Diodes

  • CDSOT23-SM712 – Bourns Inc., Surface Mount TVS Diode
  • SS34HE – Vishay Intertechnology, Schottky Barrier Rectifier
  • BSD3A311V – Brightking, ESD Protection Diode
  • CH213K – WCH, Low Dropout Ideal Diode Chip
  • VMNN110CMS-TR – Stanley Electric, Infrared Emitting Diode
  • ESD5Z2.5T1G – onsemi, ESD Protection TVS Diode
  • PMEG4010CEJ – Nexperia, Schottky Barrier Rectifier
  • BAT54S – Diotec Semiconductor, Dual Schottky Barrier Diode (Series)

All Diodes datasheetsAll Texas Instruments datasheets (2,442)

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