SMBJ51A
TVS Diode, UnidirectionalThe SMBJ51A is a tvs diode, unidirectional from Bourns. View the full SMBJ51A datasheet below including key specifications, electrical characteristics.
Official SMBJ51A datasheet (PDF) — the source this page was extracted from.
SMBJ51A Key Specifications
| Parameter | Value |
|---|---|
| Breakdown Voltage | 59.7 V |
| Case/Package | SMB |
| China RoHS | Non-Compliant |
| Clamping Voltage | 82.4 V |
| Composition | Zener |
| Direction | Unidirectional |
| Element Configuration | Single |
| Leakage Current | 5 µA |
| Lifecycle Status | Production (Last Updated: 8 months ago) |
| Max Breakdown Voltage | 62.7 V |
| Max Operating Temperature | 150 °C |
| Max Power Dissipation | 5 W |
| Max Reverse Leakage Current | 5 µA |
| Max Surge Current | 100 A |
| Min Breakdown Voltage | 56.7 V |
| Min Operating Temperature | -55 °C |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Number of Pins | 2 |
| Number of Terminals | 2 |
| Number of Unidirectional Channels | 1 |
| Peak Pulse Current | 7.3 A |
| Peak Pulse Power | 600 W |
| Polarity | Unidirectional |
| Power Line Protection | No |
| Radiation Hardening | No |
| REACH SVHC | Affected |
| Reverse Breakdown Voltage | 56.7 V |
| Reverse Standoff Voltage | 51 V |
| RoHS | Compliant |
| Schedule B | 8541100080, 8541100080|8541100080|8541100080|8541100080|8541100080 |
| Termination | SMD/SMT |
| Test Current | 1 mA |
SMBJ51A Overview
Part: SMBJ51A — Bourns
Type: Transient Voltage Suppressor Diode
Description: 51 V working peak reverse voltage, 600 W peak pulse power dissipation unidirectional TVS diode in a DO-214AA (SMB) package.
Operating Conditions:
- Operating temperature: -55 to +150 °C
- Working Peak Reverse Voltage (V_RWM): 51 V
Key Specs:
- Peak Pulse Power Dissipation (T_P = 1 ms): 600 W
- Breakdown Voltage (V_BR): 56.7 V min, 62.7 V max (at I_T = 1.0 mA)
- Maximum Reverse Leakage (I_R): 1.0 μA (at V_RWM = 51 V)
- Maximum Clamping Voltage (V_C): 82.4 V (at I_PP = 7.3 A, 10/1000 μs)
- Maximum Clamping Voltage (V_C): 107.1 V (at I_PP = 36.5 A, 8/20 μs)
- Peak Forward Surge Current (8.3 ms half sine): 100 A
- Maximum Instantaneous Forward Voltage (V_F): 3.5 V (at I_PP = 50 A)
- Steady State Power Dissipation: 5.0 W (at T_L = 75 °C)
Features:
- RoHS compliant
- Surface Mount SMB package
- Response time less than 1.0 picosecond from 0 V to minimum breakdown voltage
Applications:
- IEC 61000-4-2 ESD (Min. Level 4)
- IEC 61000-4-4 EFT
- IEC 61000-4-5 Surge
Package:
- DO-214AA (SMB)
SMBJ51A Features
- ■ RoHS compliant*
- ■ Surface Mount SMB package
- ■ Standoff Voltage: 5 to 495 volts
- ■ Power Dissipation: 600 watts
SMBJ51A Applications
- ■ IEC 61000-4-2 ESD (Min. Level 4)
- ■ IEC 61000-4-4 EFT
- ■ IEC 61000-4-5 Surge
SMBJ51A Electrical Characteristics
| Parameter | Parameter | Symbol | Value | Unit |
|---|---|---|---|---|
| Minimum Peak Pulse Power Dissipation (T P = 1 ms) (Note 1,2) | Minimum Peak Pulse Power Dissipation (T P = 1 ms) (Note 1,2) | P PK | 600 | Watts |
| Peak Forward Surge Current 8.3 ms Single Half Sine Wave Superimposed on Rated Load (JEDEC Method) (Note 3) | Peak Forward Surge Current 8.3 ms Single Half Sine Wave Superimposed on Rated Load (JEDEC Method) (Note 3) | I FSM | 100 | Amps |
| Steady State Power Dissipation @TL= 75 °C | Steady State Power Dissipation @TL= 75 °C | P M(AV) | 5.0 | Watts |
| Maximum Instantaneous Forward Voltage @I PP = 50 A (For Unidirectional Units Only) | SMBJ5.0A ~ SMBJ90A SMBJ100A ~ SMBJ495A | V F | 3.5 5.0 | Volts |
| Operating Temperature Range | Operating Temperature Range | T J | -55 to +150 | °C |
| Storage Temperature Range | Storage Temperature Range | T STG | -55 to +150 | °C |
Variants on the same datasheet
These parts have exact links to the same datasheet. They are candidates to compare, not verified drop-in replacements; check package, pinout and electrical limits.
| Part Number | Manufacturer | Package |
|---|---|---|
| SMBJ51CA | Littelfuse | DO-214AA |
Other Diodes
- CDSOT23-SM712 – Bourns Inc., Surface Mount TVS Diode
- VMNN110CMS-TR – Stanley Electric, Infrared Emitting Diode
- SS34HE – Vishay Intertechnology, Schottky Barrier Rectifier
- BSD3A311V – Brightking, ESD Protection Diode
- CH213K – WCH, Low Dropout Ideal Diode Chip
- ESD5Z2.5T1G – onsemi, ESD Protection TVS Diode
- PMEG4010CEJ – Nexperia, Schottky Barrier Rectifier
- USBLC6-2SC6 – STMicroelectronics, ESD Protection Device
Data on this page is extracted from publicly available manufacturer datasheets using automated tools including AI. It may contain errors or omissions. Always verify specifications against the official manufacturer datasheet before making design or purchasing decisions. See our Terms of Service. Rights holders can submit a takedown request.
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