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PESD3V3L4UF

Quad Unidirectional ESD Protection Array

The PESD3V3L4UF is a quad unidirectional esd protection array from Nexperia. View the full PESD3V3L4UF datasheet below including key specifications.

Official PESD3V3L4UF datasheet (PDF) — the source this page was extracted from.

Manufacturer

Nexperia

Category

Diodes

Package

XSON6

PESD3V3L4UF Key Specifications

ParameterValue
Package Dimensions1 × 1.45 × 0.5 mm
Storage Temperature-65 °C to 150 °C
ESD (MIL-STD-883 HBM)10 kV max rating (class 3, >4 kV)
Clamping Voltage (VCL)8 V max at IPP=1 A; 12 V max at IPP=3 A
Diode Capacitance (Cd)22 pF typ, 28 pF max (f=1 MHz, VR=0 V)
Peak Pulse Power (PPP)30 W (8/20 µs)
Breakdown Voltage (VBR)5.32 V to 5.88 V (IR=1 mA)
Peak Pulse Current (IPP)3 A max (8/20 µs)
Junction Temperature (Tj)150 °C max
Number Of Protected Lines4 (unidirectional)
Operating/Ambient Temperature-65 °C to 150 °C
Reverse Leakage Current (IRM)75 nA typ, 300 nA max (VRWM=3.3 V)
Differential Resistance (Rdif)200 Ω max (IR=1 mA)
Reverse Standoff Voltage (VRWM)3.3 V max
ESD Protection (IEC 61000-4-2 Contact)20 kV max rating (level 4, >8 kV contact, >15 kV air)

PESD3V3L4UF Overview

Part: PESD5V0L4U series — Nexperia

Type: Unidirectional Quadruple ESD Protection Diode Array

Description: Low capacitance unidirectional quadruple ESD protection diode arrays designed to protect up to four signal lines from the damage caused by ESD and other transients, offering 30 W peak pulse power and 12 V clamping voltage.

Operating Conditions:

  • Supply voltage: not applicable
  • Operating temperature: -65 to 150 °C
  • Reverse standoff voltage (PESD5V0L4U variants): 5 V

Absolute Maximum Ratings:

  • Max peak pulse power (PPP): 30 W (tp = 8/20 μs)
  • Max peak pulse current (IPP, PESD5V0L4U variants): 2.5 A (tp = 8/20 μs)
  • Max junction temperature: 150 °C
  • Max storage temperature: 150 °C
  • Max ESD voltage (IEC 61000-4-2 contact discharge): 20 kV

Key Specs:

  • Reverse standoff voltage (VRWM, PESD5V0L4U variants): 5.0 V
  • Reverse leakage current (IRM, PESD5V0L4U variants): 5 nA (Typ, VRWM = 5.0 V)
  • Breakdown voltage (VBR, PESD5V0L4U variants): 6.46 V (Min, IR = 1 mA)
  • Diode capacitance (Cd, PESD5V0L4U variants): 16 pF (Typ, f = 1 MHz; VR = 0 V)
  • Clamping voltage (VCL, PESD5V0L4U variants): 13 V (Max, IPP = 2.5 A)
  • Differential resistance (r dif, PESD5V0L4U variants): 100 Ω (Max, IR = 1 mA)
  • ESD protection: > 15 kV (air), > 8 kV (contact) per IEC 61000-4-2; level 4
  • Non-repetitive peak reverse power dissipation (PZSM): 6 W (square wave; tp = 1 ms)

Features:

  • ESD protection of up to four lines
  • Low diode capacitance
  • Max. peak pulse power: PPP = 30 W
  • Low clamping voltage: VCL = 12 V
  • Ultra low leakage current: IRM = 5 nA
  • ESD protection up to 20 kV
  • IEC 61000-4-2; level 4 (ESD)
  • IEC 61000-4-5 (surge); IPP = 2.5 A

Applications:

  • Computers and peripherals
  • Audio and video equipment
  • Cellular handsets and accessories
  • Communication systems
  • Portable electronics
  • Subscriber Identity Module (SIM) card protection

Package:

  • SOT886 (XSON6)
  • SOT353 (SC-88A)
  • SOT665

PESD3V3L4UF Features

  • n ESD protection of up to four lines
  • n Low diode capacitance
  • n Max. peak pulse power: PPP = 30 W
  • n Low clamping voltage: VCL = 12 V

PESD3V3L4UF Applications

  • n Computers and peripherals
  • n Audio and video equipment
  • n Cellular handsets and accessories
  • n Ultra low leakage current: IRM = 5 nA
  • n ESD protection up to 20 kV
  • n IEC 61000-4-2; level 4 (ESD)
  • n IEC 61000-4-5 (surge); IPP = 2.5 A
  • n Communication systems
  • n Portable electronics
  • n Subscriber Identity Module (SIM) card protection

Low capacitance unidirectional quadruple ESD protection diode arrays

PESD3V3L4UF Typical Application

The devices are designed for the protection of up to four unidirectional data or signal lines from the damage caused by ESD and surge pulses. The devices may be used on lines where the signal polarities are both, positive and negative with respect to ground. The devices provide a surge capability of 30 W per line for an 8/20 μ s waveform each.

PESD3V3L4UF Package Information

Low capacitance unidirectional quadruple ESD protection diode arrays

Variants on the same datasheet

These parts have exact links to the same datasheet. They are candidates to compare, not verified drop-in replacements; check package, pinout and electrical limits.

Part NumberManufacturerPackage
PESD3V3L4UGNexperiaSOT353
PESD3V3L4UWNexperiaSOT665
PESD5V0L4UFNexperiaXSON6
PESD5V0L4UGNexperiaSC-88A

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  • VMNN110CMS-TR – Stanley Electric, Infrared Emitting Diode
  • ESD5Z2.5T1G – onsemi, ESD Protection TVS Diode
  • PMEG4010CEJ – Nexperia, Schottky Barrier Rectifier
  • USBLC6-2SC6 – STMicroelectronics, ESD Protection Device

All Diodes datasheetsAll Nexperia datasheets (54)

Data on this page is extracted from publicly available manufacturer datasheets using automated tools including AI. It may contain errors or omissions. Always verify specifications against the official manufacturer datasheet before making design or purchasing decisions. See our Terms of Service. Rights holders can submit a takedown request.

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