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N32G031K6L7

32-bit ARM Cortex-M0 MCU

The N32G031K6L7 is a 32-bit arm cortex-m0 mcu from Nationz. View the full N32G031K6L7 datasheet below including key specifications, electrical characteristics, absolute maximum ratings.

N32G031K6L7 shares its datasheet with N32G031F6S7, whose page lists every part number it covers.

Official N32G031K6L7 datasheet (PDF) — the source this page was extracted from.

Manufacturer

Nationz

Package

LQFP-32 7x7mm

N32G031K6L7 Key Specifications

ParameterValue
ADC1x 12-bit 1Msps, up to 12 external channels
DMA5-channel
ESD±4kV HBM, ±1kV CDM
I2C2, up to 1MHz
SPI2, up to 18MHz (1 shared with I2S)
CoreARM Cortex-M0, up to 48MHz
GPIO26
SRAM8KB
Flash32KB
Op-Amp1x, up to 32x programmable gain
Timers2x 16-bit advanced, 1x general-purpose, 1x basic, 1x low-power
Comparator1x high-speed, 64-level adjustable reference
UART/USART3 (2 USART + 1 LPUART), up to 3Mbps
Supply Voltage1.8V to 5.5V
Debug InterfaceSWD
Operating Temperature-40°C to 105°C

N32G031K6L7 Overview

Part: N32G031x6/x8 — Nuvoton

Type: ARM Cortex-M0 Microcontroller

Description: 32-bit ARM Cortex-M0 microcontroller with a maximum operating frequency of 48MHz, integrating up to 64KB Flash, 8KB SRAM, 1x12bit 1Msps ADC, 1xOPAMP, 1xCOMP, and multiple U(S)ART, I2C, SPI interfaces.

Operating Conditions:

  • Supply voltage: 1.8V–5.5V
  • Operating temperature: -40 °C to 105 °C
  • Max CPU frequency: 48 MHz

Absolute Maximum Ratings:

Key Specs:

  • CPU Core: 32-bit ARM Cortex-M0
  • Max CPU Frequency: 48 MHz
  • Flash Memory: Up to 64 KByte
  • SRAM: 8 KByte
  • ADC Resolution: 12-bit
  • ADC Sample Rate: 1 Msps
  • I2C Max Rate: 1 MHz
  • SPI Max Rate: 18 MHz

Features:

  • Single-cycle hardware multiplication instruction
  • Encrypted Flash storage with hardware ECC
  • Low power Stop and Power Down modes
  • Multiple clock sources (HSE, LSE, HSI, LSI, PLL)
  • Programmable low voltage detection and reset
  • 3 U(S)ART, 2 SPI, 2 I2C interfaces
  • 12-channel 12-bit 1Msps ADC
  • 1 operational amplifier with programmable gain
  • 1 high-speed analog comparator
  • Up to 40 GPIOs
  • 5-channel DMA controller
  • RTC with perpetual calendar and alarm events
  • Multiple timers (advanced, general-purpose, basic, low-power, SysTick)
  • Window Watchdog (WWDG) and Independent Watchdog (IWDG)
  • SWD on-line debugging and UART Bootloader
  • Hardware divider (HDIV) and square root (SQRT) acceleration
  • Flash Write Protection (WRP) and Read Protection (RDP) levels
  • Clock failure detection, anti-tamper detection
  • 96-bit UID and 128-bit UCID

Applications:

Package:

  • UFQFPN20 (3mm x 3mm)
  • TSSOP20 (6.5mm x 4.4mm)
  • QFN32 (4mm x 4mm)
  • QFN32 (5mm x 5mm)
  • LQFP32 (7mm x 7mm)
  • LQFP48 (7mm x 7mm)
  • TQFP48 (7mm x 7mm)

N32G031K6L7 Features

  • Flash storage encryption
  • CRC16/32 calculation
  • Supports Write Protection (WRP), multiple Read Protection (RDP) levels (L0/L1/L2)
  • Supports clock failure detection, anti-tamper detection
  • 96-bit UID and 128-bit UCID

N32G031K6L7 Electrical Characteristics

Unless otherwise specified, parameters are measured under ambient temperature, fHCLK frequency, and VDDA supply voltage conditions compliant with Table 4-4.

Table 4-33 ADC Characteristics

SymbolParameterConditionMinTypMaxUnit
V DDASupply voltage-2.43.35.5V
V REF+Positive reference voltage-2.4-V DDAV

Table 4-33 ADC Characteristics

f ADCADC clock frequency---18MHz
f s (1)Sampling rate--0.891.33Msps
V AINConversion voltage range (2)-0-V REF+V
R AIN (1)External input impedance-See Formula 1See Formula 1See Formula 1Ω
R ADC (1)ADC input resistanceV DDA =3.0v-1500-Ω
C ADC (1)Internal sample and hold capacitance--1315pF
SNDRSignal noise distortion ratioV DDA =3.3v-68-dB
t S (1)Sampling time-6--1/f ADC
t STAB (1)Power-up time-32--1/f ADC
t CONV (1)Conversion time-121/f ADC
  1. Guaranteed by design and characterization, not tested in production.
  2. VREF+ is internally connected to VDDA.

Formula 1: Maximum RAIN Formula

RAIN < TS fADC ×CADC × ln(2 N+2 ) -RADC

The above formula (Formula 1) is used to determine the maximum external impedance such that the error is less than 1/4 LSB. Where N=12 (representing 12-bit resolution).

Table 4-34 ADC Accuracy - Limited Test Conditions (1)(2)

SymbolParameterTest ConditionsTypMax (3)Unit
EGGain errorV REF+ = 3.3V, T A = 25 ° C, Vin = 0.05V DDA ~ 0.95V DDA± 2± 5LSB
EOOffset errorV REF+ = 3.3V, T A = 25 ° C, Vin = 0.05V DDA ~ 0.95V DDA± 0.5± 2.0LSB
EDDifferential linearity errorV REF+ = 3.3V, T A = 25 ° C, Vin = 0.05V DDA ~ 0.95V DDA± 0.61.5LSB
ELIntegral linearity errorV REF+ = 3.3V, T A = 25 ° C, Vin = 0.05V DDA ~ 0.95V DDA± 1.52.5LSB
ENOBEffective bitsV REF+ = 3.3V, T A = 25 ° C, Vin = 0.05V DDA ~ 0.95V DDA11-Bits
  1. ADC DC accuracy values are measured after internal calibration.
  2. Relationship between ADC accuracy and reverse injection current: It is necessary to avoid injecting reverse current on any standard analog input pin, as this will significantly reduce the conversion accuracy of another analog input pin that is currently converting. It is recommended to add a Schottky diode (between the pin and ground) on standard analog pins where reverse injection current may occur.
  3. Guaranteed by characterization, not tested in production.

N32G031K6L7 Absolute Maximum Ratings

Stresses above the values listed in the 'Absolute Maximum Ratings' tables (Table 4-1, Table 4-2, Table 4-3) may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these conditions or at any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

Table 4-1 Voltage Characteristics

SymbolDescriptionMinMaxUnit
V DD - V SSExternal main supply voltage (including V DDA and V DD ) (1)-0.35.5V
V INInput voltage on 5V tolerant pins (2)V SS -0.35.5V
V INInput voltage on other pins (2)V SS -0.3V DD + 0.3V
\ΔV DDx \Voltage difference between different supply pins-
\V SSx - V SS \Voltage difference between different ground pins-
V ESD(HBM)ESD electrostatic discharge voltage (Human Body Model)See Section 4.3.11See Section 4.3.11

Table 4-2 Current Characteristics

SymbolDescriptionMax (1)Unit
I VDDTotal current through V DD /V DDA power lines (supply current) (1)200mA
I VSSTotal current through V SS ground lines (sink current) (1)200mA
I IOOutput sink current on any I/O and control pin16mA
I IOOutput source current on any I/O and control pin-16mA
I INJ(PIN) (2)(3)Injection current on NRST pin0/-5mA
I INJ(PIN) (2)(3)Injection current on HSE OSC_IN pin and LSE OSC_IN pin+/-5mA
I INJ(PIN) (2)(3)Injection current on other pins (4)+/-5mA
∑I INJ(PIN) (2)Total injection current on all I/O and control pins (4)+/-16mA

Figure 4-4 Current Consumption Measurement Scheme

Table 4-2 Current Characteristics

  1. Reverse injection current can interfere with the device's analog performance. See Section 4.3.17.
  2. When several I/O ports have injection current simultaneously, the maximum value of ∑IINJ(PIN) is the sum of the instantaneous absolute values of the positive injection current and the reverse injection current. This result is based on the characterization of the maximum ∑IINJ(PIN) on 4 I/O ports of the device.

Table 4-3 Temperature Characteristics

SymbolDescriptionValueUnit
T STGStorage temperature range-40 ~ + 150°C
T JMaximum junction temperature125°C

N32G031K6L7 Package Information

Variants on the same datasheet

These parts have exact links to the same datasheet. They are candidates to compare, not verified drop-in replacements; check package, pinout and electrical limits.

Part NumberManufacturerPackage
N32G031F6S7NationzTSSOP-20
N32G031F6U7NationzUFQFPN20 3x3mm
N32G031K6Q7Nationz—
N32G031K6Q7-1Nationz—

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