N32G031K6Q7-1
The N32G031K6Q7-1 is an electronic component from Nationz. View the full N32G031K6Q7-1 datasheet below including electrical characteristics, absolute maximum ratings.
Manufacturer
Nationz
Overview
Part: N32G031x6/x8 — Nuvoton
Type: ARM Cortex-M0 Microcontroller
Description: 32-bit ARM Cortex-M0 microcontroller with a maximum operating frequency of 48MHz, integrating up to 64KB Flash, 8KB SRAM, 1x12bit 1Msps ADC, 1xOPAMP, 1xCOMP, and multiple U(S)ART, I2C, SPI interfaces.
Operating Conditions:
- Supply voltage: 1.8V–5.5V
- Operating temperature: -40 °C to 105 °C
- Max CPU frequency: 48 MHz
Absolute Maximum Ratings:
Key Specs:
- CPU Core: 32-bit ARM Cortex-M0
- Max CPU Frequency: 48 MHz
- Flash Memory: Up to 64 KByte
- SRAM: 8 KByte
- ADC Resolution: 12-bit
- ADC Sample Rate: 1 Msps
- I2C Max Rate: 1 MHz
- SPI Max Rate: 18 MHz
Features:
- Single-cycle hardware multiplication instruction
- Encrypted Flash storage with hardware ECC
- Low power Stop and Power Down modes
- Multiple clock sources (HSE, LSE, HSI, LSI, PLL)
- Programmable low voltage detection and reset
- 3 U(S)ART, 2 SPI, 2 I2C interfaces
- 12-channel 12-bit 1Msps ADC
- 1 operational amplifier with programmable gain
- 1 high-speed analog comparator
- Up to 40 GPIOs
- 5-channel DMA controller
- RTC with perpetual calendar and alarm events
- Multiple timers (advanced, general-purpose, basic, low-power, SysTick)
- Window Watchdog (WWDG) and Independent Watchdog (IWDG)
- SWD on-line debugging and UART Bootloader
- Hardware divider (HDIV) and square root (SQRT) acceleration
- Flash Write Protection (WRP) and Read Protection (RDP) levels
- Clock failure detection, anti-tamper detection
- 96-bit UID and 128-bit UCID
Applications:
Package:
- UFQFPN20 (3mm x 3mm)
- TSSOP20 (6.5mm x 4.4mm)
- QFN32 (4mm x 4mm)
- QFN32 (5mm x 5mm)
- LQFP32 (7mm x 7mm)
- LQFP48 (7mm x 7mm)
- TQFP48 (7mm x 7mm)
Features
- Flash storage encryption
- CRC16/32 calculation
- Supports Write Protection (WRP), multiple Read Protection (RDP) levels (L0/L1/L2)
- Supports clock failure detection, anti-tamper detection
- 96-bit UID and 128-bit UCID
Electrical Characteristics
Unless otherwise specified, parameters are measured under ambient temperature, fHCLK frequency, and VDDA supply voltage conditions compliant with Table 4-4.
Table 4-33 ADC Characteristics
| Symbol | Parameter | Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| V DDA | Supply voltage | - | 2.4 | 3.3 | 5.5 | V |
| V REF+ | Positive reference voltage | - | 2.4 | - | V DDA | V |
Table 4-33 ADC Characteristics
| f ADC | ADC clock frequency | - | - | - | 18 | MHz |
|---|---|---|---|---|---|---|
| f s (1) | Sampling rate | - | - | 0.89 | 1.33 | Msps |
| V AIN | Conversion voltage range (2) | - | 0 | - | V REF+ | V |
| R AIN (1) | External input impedance | - | See Formula 1 | See Formula 1 | See Formula 1 | Ω |
| R ADC (1) | ADC input resistance | V DDA =3.0v | - | 1500 | - | Ω |
| C ADC (1) | Internal sample and hold capacitance | - | - | 13 | 15 | pF |
| SNDR | Signal noise distortion ratio | V DDA =3.3v | - | 68 | - | dB |
| t S (1) | Sampling time | - | 6 | - | - | 1/f ADC |
| t STAB (1) | Power-up time | - | 32 | - | - | 1/f ADC |
| t CONV (1) | Conversion time | - | 12 | 1/f ADC |
- Guaranteed by design and characterization, not tested in production.
- VREF+ is internally connected to VDDA.
Formula 1: Maximum RAIN Formula
RAIN < TS fADC ×CADC × ln(2 N+2 ) -RADC
The above formula (Formula 1) is used to determine the maximum external impedance such that the error is less than 1/4 LSB. Where N=12 (representing 12-bit resolution).
Table 4-34 ADC Accuracy - Limited Test Conditions (1)(2)
| Symbol | Parameter | Test Conditions | Typ | Max (3) | Unit |
|---|---|---|---|---|---|
| EG | Gain error | V REF+ = 3.3V, T A = 25 ° C, Vin = 0.05V DDA ~ 0.95V DDA | ± 2 | ± 5 | LSB |
| EO | Offset error | V REF+ = 3.3V, T A = 25 ° C, Vin = 0.05V DDA ~ 0.95V DDA | ± 0.5 | ± 2.0 | LSB |
| ED | Differential linearity error | V REF+ = 3.3V, T A = 25 ° C, Vin = 0.05V DDA ~ 0.95V DDA | ± 0.6 | 1.5 | LSB |
| EL | Integral linearity error | V REF+ = 3.3V, T A = 25 ° C, Vin = 0.05V DDA ~ 0.95V DDA | ± 1.5 | 2.5 | LSB |
| ENOB | Effective bits | V REF+ = 3.3V, T A = 25 ° C, Vin = 0.05V DDA ~ 0.95V DDA | 11 | - | Bits |
- ADC DC accuracy values are measured after internal calibration.
- Relationship between ADC accuracy and reverse injection current: It is necessary to avoid injecting reverse current on any standard analog input pin, as this will significantly reduce the conversion accuracy of another analog input pin that is currently converting. It is recommended to add a Schottky diode (between the pin and ground) on standard analog pins where reverse injection current may occur.
- Guaranteed by characterization, not tested in production.
Absolute Maximum Ratings
Stresses above the values listed in the 'Absolute Maximum Ratings' tables (Table 4-1, Table 4-2, Table 4-3) may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these conditions or at any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
Table 4-1 Voltage Characteristics
| Symbol | Description | Min | Max | Unit |
|---|---|---|---|---|
| V DD - V SS | External main supply voltage (including V DDA and V DD ) (1) | -0.3 | 5.5 | V |
| V IN | Input voltage on 5V tolerant pins (2) | V SS -0.3 | 5.5 | V |
| V IN | Input voltage on other pins (2) | V SS -0.3 | V DD + 0.3 | V |
| \ | ΔV DDx \ | Voltage difference between different supply pins | - | |
| \ | V SSx - V SS \ | Voltage difference between different ground pins | - | |
| V ESD(HBM) | ESD electrostatic discharge voltage (Human Body Model) | See Section 4.3.11 | See Section 4.3.11 |
Table 4-2 Current Characteristics
| Symbol | Description | Max (1) | Unit |
|---|---|---|---|
| I VDD | Total current through V DD /V DDA power lines (supply current) (1) | 200 | mA |
| I VSS | Total current through V SS ground lines (sink current) (1) | 200 | mA |
| I IO | Output sink current on any I/O and control pin | 16 | mA |
| I IO | Output source current on any I/O and control pin | -16 | mA |
| I INJ(PIN) (2)(3) | Injection current on NRST pin | 0/-5 | mA |
| I INJ(PIN) (2)(3) | Injection current on HSE OSC_IN pin and LSE OSC_IN pin | +/-5 | mA |
| I INJ(PIN) (2)(3) | Injection current on other pins (4) | +/-5 | mA |
| ∑I INJ(PIN) (2) | Total injection current on all I/O and control pins (4) | +/-16 | mA |
Figure 4-4 Current Consumption Measurement Scheme
Table 4-2 Current Characteristics
- Reverse injection current can interfere with the device's analog performance. See Section 4.3.17.
- When several I/O ports have injection current simultaneously, the maximum value of ∑IINJ(PIN) is the sum of the instantaneous absolute values of the positive injection current and the reverse injection current. This result is based on the characterization of the maximum ∑IINJ(PIN) on 4 I/O ports of the device.
Table 4-3 Temperature Characteristics
| Symbol | Description | Value | Unit |
|---|---|---|---|
| T STG | Storage temperature range | -40 ~ + 150 | °C |
| T J | Maximum junction temperature | 125 | °C |
Package Information
Related Variants
The following components are covered by the same datasheet.
| Part Number | Manufacturer | Package |
|---|---|---|
| N32G031F6S7 | Nationz | — |
| N32G031F6U7 | Nationz | — |
| N32G031K6L7 | Nationz | — |
| N32G031K6Q7 | Nationz | — |
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