MMBZ18VALT1G
Dual Common Anode Zener TVSThe MMBZ18VALT1G is a dual common anode zener tvs from onsemi. View the full MMBZ18VALT1G datasheet below including key specifications, electrical characteristics, absolute maximum ratings.
Official MMBZ18VALT1G datasheet (PDF) — the source this page was extracted from.
MMBZ18VALT1G Key Specifications
| Parameter | Value |
|---|---|
| Device Marking | 18A |
| ESD Rating (HBM) | Class 3B (>16 kV) |
| Forward Voltage (VF) | 0.9 V max @ 10 mA |
| Peak Power Dissipation | 40 W @ 1.0 ms |
| Breakdown Voltage (VBR) | 17.10 V to 18.90 V (18 V nominal) @ 1.0 mA |
| ESD Rating (IEC61000-4-2) | Level 4, ±30 kV contact discharge |
| Reverse Leakage Current (IR) | 50 nA @ VRWM |
| Maximum Clamping Voltage (VC) | 25 V @ 1.6 A |
| Total Power Dissipation (FR-5) | 225 mW @ TA=25°C |
| Operating/Storage Temperature Range | -55°C to +150°C |
| Working Peak Reverse Voltage (VRWM) | 14.5 V |
| Thermal Resistance Junction-To-Ambient | 556 °C/W (FR-5) |
MMBZ18VALT1G Overview
Part: MMBZxxxALT1G Series, SZMMBZxxxALT1G Series — ON Semiconductor
Type: Zener Transient Voltage Suppressor
Description: Dual monolithic silicon Zener diodes designed for transient overvoltage and ESD protection, offering 24 or 40 W peak power and protecting two separate lines in a single SOT-23 package.
Operating Conditions:
- Working peak reverse voltage: 3 V to 26 V
- Operating temperature: -55 to +150 °C (Junction and Storage)
Absolute Maximum Ratings:
- Max Peak Power Dissipation: 24 W (MMBZ5V6ALT1G thru MMBZ9V1ALT1G),
MMBZ18VALT1G Features
- Working Peak Reverse Voltage Range - 3 V to 26 V
- SOT-23 Package Allows Either Two Separate Unidirectional Configurations or a Single Bidirectional Configuration
- Standard Zener Breakdown Voltage Range - 5.6 V to 47 V
- ESD Rating:
- Peak Power - 24 or 40 W @ 1.0 ms (Unidirectional), per Figure 6 Waveform
- Class 3B (> 16 kV) per the Human Body Model
- Class C (> 400 V) per the Machine Model
- Maximum Clamping Voltage @ Peak Pulse Current
- ESD Rating of IEC61000-4-2 Level 4, ± 30 kV Contact Discharge
- Low Leakage < 5.0 m A
- SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable
- Flammability Rating UL 94 V-0
- These Devices are Pb-Free and are RoHS Compliant
MMBZ18VALT1G Applications
A dual junction common anode design in a SOT-23 package protects two separate lines using only one package. This adds flexibility and creativity to PCB design especially when board space is at a premium. Two simplified examples of TVS applications are illustrated below.
MMBZ18VALT1G Electrical Characteristics
(T A = 25 ° C unless otherwise noted)
UNIDIRECTIONAL (Circuit tied to Pins 1 and 3 or 2 and 3)
| Symbol | Parameter |
|---|---|
| I PP | Maximum Reverse Peak Pulse Current |
| V C | Clamping Voltage @I PP |
| V RWM | Working Peak Reverse Voltage |
| I R | Maximum Reverse Leakage Current@V RWM |
| V BR | Breakdown Voltage @I T |
| I T | Test Current |
| Q V BR | Maximum Temperature Coefficient of V BR |
| I F | Forward Current |
| V F | Forward Voltage @I F |
| Z ZT | Maximum Zener Impedance @I ZT |
| I ZK | Reverse Current |
| Z ZK | Maximum Zener Impedance @I ZK |
ELECTRICAL CHARACTERISTICS (T A = 25 ° C unless otherwise noted)
UNIDIRECTIONAL (Circuit tied to Pins 1 and 3 or Pins 2 and 3)
(V F = 0.9 V Max @ I F = 10 mA) (5% Tolerance)
MMBZ18VALT1G Absolute Maximum Ratings
| Rating | Rating | Symbol | Value | Unit |
|---|---|---|---|---|
| Peak Power Dissipation @1.0 ms (Note 1) @T L ≤ 25 ° C | MMBZ5V6ALT1G thru MMBZ9V1ALT1G MMBZ12VALT1G thru MMBZ47VALT1G | P pk | 24 40 | W |
| Total Power Dissipation on FR-5 Board (Note 2) @T A = 25 ° C Derate above 25 ° C | Total Power Dissipation on FR-5 Board (Note 2) @T A = 25 ° C Derate above 25 ° C | ° P D ° R q JA | 225 1.8 556 | mW ° mW/ ° C ° C/W |
| Thermal Resistance Junction-to-Ambient Total Power Dissipation on Alumina Substrate (Note 3) @T A = 25 ° C Derate above 25 ° C | Thermal Resistance Junction-to-Ambient Total Power Dissipation on Alumina Substrate (Note 3) @T A = 25 ° C Derate above 25 ° C | ° P D ° | 300 2.4 | ° mW mW/ ° C |
| Thermal Resistance Junction-to-Ambient | Thermal Resistance Junction-to-Ambient | R q JA | 417 | ° C/W |
| Junction and Storage Temperature Range | Junction and Storage Temperature Range | T J , T stg | - 55 to +150 | ° C |
| Lead Solder Temperature - Maximum (10 Second Duration) | Lead Solder Temperature - Maximum (10 Second Duration) | T L | 260 | ° C |
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
-
Non-repetitive current pulse per Figure 6 and derate above T A = 25 ° C per Figure 7.
-
FR-5 = 1.0 x 0.75 x 0.62 in.
-
Alumina = 0.4 x 0.3 x 0.024 in, 99.5% alumina.
*Other voltages may be available upon request.
Other Diodes
- CDSOT23-SM712 – Bourns Inc., Surface Mount TVS Diode
- SS34HE – Vishay Intertechnology, Schottky Barrier Rectifier
- BSD3A311V – Brightking, ESD Protection Diode
- CH213K – WCH, Low Dropout Ideal Diode Chip
- VMNN110CMS-TR – Stanley Electric, Infrared Emitting Diode
- ESD5Z2.5T1G – onsemi, ESD Protection TVS Diode
- PMEG4010CEJ – Nexperia, Schottky Barrier Rectifier
- USBLC6-2SC6 – STMicroelectronics, ESD Protection Device
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