MMBZ18VALT1G

The MMBZ18VALT1G is an electronic component from ON Semiconductor®. View the full MMBZ18VALT1G datasheet below including electrical characteristics, absolute maximum ratings.

Manufacturer

ON Semiconductor®

Package

SOT-23

Overview

Part: MMBZxxxALT1G Series, SZMMBZxxxALT1G Series — ON Semiconductor

Type: Zener Transient Voltage Suppressor

Description: Dual monolithic silicon Zener diodes designed for transient overvoltage and ESD protection, offering 24 or 40 W peak power and protecting two separate lines in a single SOT-23 package.

Operating Conditions:

Working peak reverse voltage: 3 V to 26 V
Operating temperature: -55 to +150 °C (Junction and Storage)

Absolute Maximum Ratings:

Max Peak Power Dissipation: 24 W (MMBZ5V6ALT1G thru MMBZ9V1ALT1G),

Features

Working Peak Reverse Voltage Range - 3 V to 26 V
SOT-23 Package Allows Either Two Separate Unidirectional Configurations or a Single Bidirectional Configuration
Standard Zener Breakdown Voltage Range - 5.6 V to 47 V
ESD Rating:
Peak Power - 24 or 40 W @ 1.0 ms (Unidirectional), per Figure 6 Waveform
Class 3B (> 16 kV) per the Human Body Model
Class C (> 400 V) per the Machine Model
Maximum Clamping Voltage @ Peak Pulse Current
ESD Rating of IEC61000-4-2 Level 4, ± 30 kV Contact Discharge
Low Leakage < 5.0 m A
SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable
Flammability Rating UL 94 V-0
These Devices are Pb-Free and are RoHS Compliant

Applications

A dual junction common anode design in a SOT-23 package protects two separate lines using only one package. This adds flexibility and creativity to PCB design especially when board space is at a premium. Two simplified examples of TVS applications are illustrated below.

Electrical Characteristics

(T A = 25 ° C unless otherwise noted)

UNIDIRECTIONAL (Circuit tied to Pins 1 and 3 or 2 and 3)

Symbol	Parameter
I PP	Maximum Reverse Peak Pulse Current
V C	Clamping Voltage @I PP
V RWM	Working Peak Reverse Voltage
I R	Maximum Reverse Leakage Current@V RWM
V BR	Breakdown Voltage @I T
I T	Test Current
Q V BR	Maximum Temperature Coefficient of V BR
I F	Forward Current
V F	Forward Voltage @I F
Z ZT	Maximum Zener Impedance @I ZT
I ZK	Reverse Current
Z ZK	Maximum Zener Impedance @I ZK

ELECTRICAL CHARACTERISTICS (T A = 25 ° C unless otherwise noted)

UNIDIRECTIONAL (Circuit tied to Pins 1 and 3 or Pins 2 and 3)

(V F = 0.9 V Max @ I F = 10 mA) (5% Tolerance)

Absolute Maximum Ratings

Rating	Rating	Symbol	Value	Unit
Peak Power Dissipation @1.0 ms (Note 1) @T L ≤ 25 ° C	MMBZ5V6ALT1G thru MMBZ9V1ALT1G MMBZ12VALT1G thru MMBZ47VALT1G	P pk	24 40	W
Total Power Dissipation on FR-5 Board (Note 2) @T A = 25 ° C Derate above 25 ° C	Total Power Dissipation on FR-5 Board (Note 2) @T A = 25 ° C Derate above 25 ° C	° P D ° R q JA	225 1.8 556	mW ° mW/ ° C ° C/W
Thermal Resistance Junction-to-Ambient Total Power Dissipation on Alumina Substrate (Note 3) @T A = 25 ° C Derate above 25 ° C	Thermal Resistance Junction-to-Ambient Total Power Dissipation on Alumina Substrate (Note 3) @T A = 25 ° C Derate above 25 ° C	° P D °	300 2.4	° mW mW/ ° C
Thermal Resistance Junction-to-Ambient	Thermal Resistance Junction-to-Ambient	R q JA	417	° C/W
Junction and Storage Temperature Range	Junction and Storage Temperature Range	T J , T stg	- 55 to +150	° C
Lead Solder Temperature - Maximum (10 Second Duration)	Lead Solder Temperature - Maximum (10 Second Duration)	T L	260	° C

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.

Non-repetitive current pulse per Figure 6 and derate above T A = 25 ° C per Figure 7.
FR-5 = 1.0 x 0.75 x 0.62 in.
Alumina = 0.4 x 0.3 x 0.024 in, 99.5% alumina.

*Other voltages may be available upon request.

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