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LCMXO2-640U

Low-Power Non-Volatile FPGA (PLD)

The LCMXO2-640U is a low-power non-volatile fpga (pld) from Lattice Semiconductor. View the full LCMXO2-640U datasheet below including key specifications, electrical characteristics, absolute maximum ratings.

LCMXO2-640U shares its datasheet with LCMXO2-7000, whose page lists every part number it covers.

Official LCMXO2-640U datasheet (PDF) — the source this page was extracted from.

LCMXO2-640U Key Specifications

ParameterValue
LUT4 Count640
Number Of PLLs1
Distributed RAM5 kbits
Speed Grades (HC)-4, -5, -6
User Flash Memory64 kbits
Embedded Block RAM64 kbits (7 EBR blocks)
Flash Write Cycles100,000
Hardened Functions2x I2C, 1x SPI, 1x Timer/Counter
Process Technology65 nm
Temperature GradesCommercial and Industrial
Configuration InterfacesJTAG, SPI, I2C
Core Supply Voltage (HC)2.5V / 3.3V (internal regulator)
PLL Input Frequency Range7 MHz to 400 MHz
Internal Oscillator Accuracy5.5%
Static Core Supply Current (HC Typ.)3.48 mA

LCMXO2-640U Overview

Part: MachXO2™ Family — Lattice Semiconductor Type: Ultra Low Power, Instant-On, Non-Volatile PLD (Programmable Logic Device) Description: A family of ultra low power, instant-on, non-volatile PLDs with densities from 256 to 6864 LUTs, featuring embedded block RAM, distributed RAM, user flash memory, PLLs, and hardened SPI, I2C, and timer/counter functions.

Operating Conditions:

  • Supply voltage: 1.2 V (ZE, HE devices), 2.5 V or 3.3 V (HC devices)
  • Standby power: As low as 22 μW
  • PLL input frequency range: 7 MHz to 400 MHz

Absolute Maximum Ratings:

Key Specs:

  • Logic Density: 256 to 6864 LUT4s
  • I/O Count: 18 to 334 I/Os
  • Embedded Block RAM (EBR): Up to 240 kbits
  • Distributed RAM: Up to 54 kbits
  • User Flash Memory (UFM): Up to 256 kbits
  • UFM Write Cycles: 100,000
  • On-chip Oscillator Accuracy: 5.5%
  • PLLs per device: Up to two

Features:

  • Flexible Logic Architecture with LUT4s
  • Ultra Low Power Devices (65 nm process, 22 μW standby)
  • Embedded and Distributed Memory (sysMEM EBR, Distributed RAM, dedicated FIFO logic)
  • On-Chip User Flash Memory (WISHBONE, SPI, I2C, JTAG access)
  • Pre-Engineered Source Synchronous I/O (DDR registers, gearing logic, DQS support)
  • High Performance, Flexible I/O Buffer (LVCMOS, LVTTL, PCI, LVDS, HSTL, SSTL, Schmitt trigger, hot socketing, on-chip termination, pull-up/down)
  • Flexible On-Chip Clocking (Eight primary clocks, two edge clocks, two analog PLLs)
  • Non-volatile, Infinitely Reconfigurable (Instant-on, JTAG, SPI, I2C programming, background programming, dual boot)
  • TransFR™ Reconfiguration (In-field logic update)
  • Enhanced System Level Support (Hardened SPI, I2C, timer/counter, on-chip oscillator, TraceID, OTP mode, single power supply, IEEE 1149.1, IEEE 1532)
  • Broad Range of Package Options (TQFP, WLCSP, ucBGA, csBGA, caBGA, ftBGA, fpBGA, QFN)

Applications:

  • Low cost, high volume consumer applications
  • System applications

Package:

  • 25-ball WLCSP (2.5 mm x 2.5 mm, 0.4 mm)
  • 32 QFN (5 mm x 5 mm, 0.5 mm)
  • 48 QFN (7 mm x 7 mm, 0.5 mm)
  • 49-ball WLCSP (3.2 mm x 3.2 mm, 0.4 mm)
  • 64-ball ucBGA (4 mm x 4 mm, 0.4 mm)
  • 84 QFN (7 mm x 7 mm, 0.5 mm)
  • 100-pin TQFP (14 mm x 14 mm)
  • 132-ball csBGA (8 mm x 8 mm, 0.5 mm)
  • 144-pin TQFP (20 mm x 20 mm)
  • 184-ball csBGA (8 mm x 8 mm, 0.5 mm)
  • 256-ball caBGA (14 mm x 14 mm, 0.8 mm)
  • 256-ball ftBGA (17 mm x 17 mm, 1.0 mm)
  • 332-ball caBGA (17 mm x 17 mm, 0.8 mm)
  • 484-ball ftBGA (23 mm x 23 mm, 1.0 mm)

LCMXO2-640U Features

  • Flexible Logic Architecture

  • Six devices with 256 to 6864 LUT4s and 18 to 334 I/Os

  • Ultra Low Power Devices

  • Advanced 65 nm low power process

  • As low as 22 μW standby power

  • Programmable low swing differential I/Os

  • Stand-by mode and other power saving options

  • Embedded and Distributed Memory

  • Up to 240 kbits sysMEM™ Embedded Block RAM

  • Up to 54 kbits Distributed RAM

  • Dedicated FIFO control logic

LCMXO2-640U Electrical Characteristics

SymbolParameterConditionMin.Typ.Max.Units
I IL , I IH 1, 4Input or I/O LeakageClamp OFF and V CCIO < V IN < V IH (MAX)--+175μA
I IL , I IH 1, 4Input or I/O LeakageClamp OFF and V IN = V CCIO-10-10μA
I IL , I IH 1, 4Input or I/O LeakageClamp OFF and V CCIO -0.97 V < V IN < V CCIO-175--μA
I IL , I IH 1, 4Input or I/O LeakageClampOFFand0V<V IN < V CCIO -0.97V--10μA
I IL , I IH 1, 4Input or I/O LeakageClamp OFF and V IN = GND--10μA
I IL , I IH 1, 4Input or I/O LeakageClamp ON and 0 V < V IN < V CCIO--10μA
I PUI/O Active Pull-up Current0 < V IN < 0.7 V CCIO-30--309μA
I PDI/O Active Pull-down CurrentV IL (MAX) < V IN < V CCIO30-305μA
I BHLSBus Hold Low sustaining currentV IN = V IL (MAX)30--μA
I BHHSBus Hold High sustaining currentV IN = 0.7V CCIO-30--μA
I BHLOBus Hold Low Overdrive current0 V IN V CCIO--305μA
I BHHOBus Hold High Overdrive current0 V IN V CCIO---309μA
V BHT 3Bus Hold Trip PointsV IL (MAX)-V IH (MIN)V
C1I/O Capacitance 2V CCIO = 3.3 V, 2.5 V, 1.8 V, 1.5 V, 1.2 V, V CC = Typ., V IO = 0 to V IH (MAX)359pF
C2Dedicated Input Capacitance 2V CCIO = 3.3 V, 2.5 V, 1.8 V, 1.5 V, 1.2 V, V CC = Typ., V IO = 0 to V IH (MAX)35.57pF
V HYSTHysteresis for Schmitt Trigger Inputs 5V CCIO = 3.3 V, Hysteresis = Large-450-mV
V HYSTHysteresis for Schmitt Trigger Inputs 5V CCIO = 2.5 V, Hysteresis = Large-250-mV
V HYSTHysteresis for Schmitt Trigger Inputs 5V CCIO = 1.8 V, Hysteresis = Large-125-mV
V HYSTHysteresis for Schmitt Trigger Inputs 5V CCIO = 1.5 V, Hysteresis = Large-100-mV
V HYSTHysteresis for Schmitt Trigger Inputs 5V CCIO = 3.3 V, Hysteresis = Small-250-mV
V HYSTHysteresis for Schmitt Trigger Inputs 5V CCIO = 2.5 V, Hysteresis = Small-150-mV
V HYSTHysteresis for Schmitt Trigger Inputs 5V CCIO = 1.8 V, Hysteresis = Small-60-mV
V HYSTHysteresis for Schmitt Trigger Inputs 5V CCIO = 1.5 V, Hysteresis = Small-40-mV

LCMXO2-640U Absolute Maximum Ratings

MachXO2 ZE/HE (1.2 V)MachXO2 HC (2.5 V / 3.3 V)
Supply Voltage V CC . . . . . . . . . . .. . . .-0.5 V to 1.32 V . . .. . . . .-0.5 V to 3.75 V
Output Supply Voltage V CCIO . . .. . . .-0.5 V to 3.75 V . . .. . . . .-0.5 V to 3.75 V
I/O Tri-state Voltage Applied 4, 5 . . .. . . .-0.5 V to 3.75 V . . .. . . . .-0.5 V to 3.75 V
Dedicated Input Voltage Applied 4 .. . . .-0.5 V to 3.75 V . . .. . . . .-0.5 V to 3.75 V
Storage Temperature (Ambient). .. . . -55 °C to 125 °C. . .. . . . -55 °C to 125 °C
Junction Temperature (T ) . . . . . .. . . -40 °C to 125 °C. . . .. . . . -40 °C to 125 °C
SymbolParameterMin.Max.Units
V CC 1Core Supply Voltage for 1.2 V Devices1.141.26V
V CC 1Core Supply Voltage for 2.5 V / 3.3 V Devices2.3753.6V
V CCIO 1, 2, 3I/O Driver Supply Voltage1.143.6V
t JCOMJunction Temperature Commercial Operation085°C
t JINDJunction Temperature Industrial Operation-40100°C

LCMXO2-640U Thermal Information

Thermal management is recommended as part of any sound FPGA design methodology. To assess the thermal characteristics of a system, Lattice specifies a maximum allowable junction temperature in all device data sheets. Users must complete a thermal analysis of their specific design to ensure that the device and package do not exceed the junction temperature limits. Refer to the Thermal Management document to find the device/package specific thermal values.

Variants on the same datasheet

These parts have exact links to the same datasheet. They are candidates to compare, not verified drop-in replacements; check package, pinout and electrical limits.

Part NumberManufacturerPackage
LCMXO2Lattice Semiconductor—
LCMXO2-1200Lattice Semiconductor—
LCMXO2-1200ULattice SemiconductorftBGA-256
LCMXO2-2000Lattice Semiconductor—
LCMXO2-2000ULattice Semiconductor—
LCMXO2-256Lattice Semiconductor—
LCMXO2-256HCLattice Semiconductor25-ball WLC
LCMXO2-256ZELattice Semiconductor—
LCMXO2-4000Lattice Semiconductor—
LCMXO2-640Lattice Semiconductor—
LCMXO2-640HCLattice Semiconductor—
LCMXO2-640ZELattice Semiconductor—
LCMXO2-7000Lattice Semiconductor—

Other Integrated Circuits

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Data on this page is extracted from publicly available manufacturer datasheets using automated tools including AI. It may contain errors or omissions. Always verify specifications against the official manufacturer datasheet before making design or purchasing decisions. See our Terms of Service. Rights holders can submit a takedown request.

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