LCMXO2-2000U
The LCMXO2-2000U is an electronic component from Lattice Semiconductor. View the full LCMXO2-2000U datasheet below including electrical characteristics, absolute maximum ratings.
Manufacturer
Lattice Semiconductor
Overview
Part: MachXO2™ Family — Lattice Semiconductor Type: Ultra Low Power, Instant-On, Non-Volatile PLD (Programmable Logic Device) Description: A family of ultra low power, instant-on, non-volatile PLDs with densities from 256 to 6864 LUTs, featuring embedded block RAM, distributed RAM, user flash memory, PLLs, and hardened SPI, I2C, and timer/counter functions.
Operating Conditions:
- Supply voltage: 1.2 V (ZE, HE devices), 2.5 V or 3.3 V (HC devices)
- Standby power: As low as 22 μW
- PLL input frequency range: 7 MHz to 400 MHz
Absolute Maximum Ratings:
Key Specs:
- Logic Density: 256 to 6864 LUT4s
- I/O Count: 18 to 334 I/Os
- Embedded Block RAM (EBR): Up to 240 kbits
- Distributed RAM: Up to 54 kbits
- User Flash Memory (UFM): Up to 256 kbits
- UFM Write Cycles: 100,000
- On-chip Oscillator Accuracy: 5.5%
- PLLs per device: Up to two
Features:
- Flexible Logic Architecture with LUT4s
- Ultra Low Power Devices (65 nm process, 22 μW standby)
- Embedded and Distributed Memory (sysMEM EBR, Distributed RAM, dedicated FIFO logic)
- On-Chip User Flash Memory (WISHBONE, SPI, I2C, JTAG access)
- Pre-Engineered Source Synchronous I/O (DDR registers, gearing logic, DQS support)
- High Performance, Flexible I/O Buffer (LVCMOS, LVTTL, PCI, LVDS, HSTL, SSTL, Schmitt trigger, hot socketing, on-chip termination, pull-up/down)
- Flexible On-Chip Clocking (Eight primary clocks, two edge clocks, two analog PLLs)
- Non-volatile, Infinitely Reconfigurable (Instant-on, JTAG, SPI, I2C programming, background programming, dual boot)
- TransFR™ Reconfiguration (In-field logic update)
- Enhanced System Level Support (Hardened SPI, I2C, timer/counter, on-chip oscillator, TraceID, OTP mode, single power supply, IEEE 1149.1, IEEE 1532)
- Broad Range of Package Options (TQFP, WLCSP, ucBGA, csBGA, caBGA, ftBGA, fpBGA, QFN)
Applications:
- Low cost, high volume consumer applications
- System applications
Package:
- 25-ball WLCSP (2.5 mm x 2.5 mm, 0.4 mm)
- 32 QFN (5 mm x 5 mm, 0.5 mm)
- 48 QFN (7 mm x 7 mm, 0.5 mm)
- 49-ball WLCSP (3.2 mm x 3.2 mm, 0.4 mm)
- 64-ball ucBGA (4 mm x 4 mm, 0.4 mm)
- 84 QFN (7 mm x 7 mm, 0.5 mm)
- 100-pin TQFP (14 mm x 14 mm)
- 132-ball csBGA (8 mm x 8 mm, 0.5 mm)
- 144-pin TQFP (20 mm x 20 mm)
- 184-ball csBGA (8 mm x 8 mm, 0.5 mm)
- 256-ball caBGA (14 mm x 14 mm, 0.8 mm)
- 256-ball ftBGA (17 mm x 17 mm, 1.0 mm)
- 332-ball caBGA (17 mm x 17 mm, 0.8 mm)
- 484-ball ftBGA (23 mm x 23 mm, 1.0 mm)
Features
-
Flexible Logic Architecture
-
Six devices with 256 to 6864 LUT4s and 18 to 334 I/Os
-
Ultra Low Power Devices
-
Advanced 65 nm low power process
-
As low as 22 μW standby power
-
Programmable low swing differential I/Os
-
Stand-by mode and other power saving options
-
Embedded and Distributed Memory
-
Up to 240 kbits sysMEM™ Embedded Block RAM
-
Up to 54 kbits Distributed RAM
-
Dedicated FIFO control logic
Electrical Characteristics
| Symbol | Parameter | Condition | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|---|
| I IL , I IH 1, 4 | Input or I/O Leakage | Clamp OFF and V CCIO < V IN < V IH (MAX) | - | - | +175 | μA |
| I IL , I IH 1, 4 | Input or I/O Leakage | Clamp OFF and V IN = V CCIO | -10 | - | 10 | μA |
| I IL , I IH 1, 4 | Input or I/O Leakage | Clamp OFF and V CCIO -0.97 V < V IN < V CCIO | -175 | - | - | μA |
| I IL , I IH 1, 4 | Input or I/O Leakage | ClampOFFand0V<V IN < V CCIO -0.97V | - | - | 10 | μA |
| I IL , I IH 1, 4 | Input or I/O Leakage | Clamp OFF and V IN = GND | - | - | 10 | μA |
| I IL , I IH 1, 4 | Input or I/O Leakage | Clamp ON and 0 V < V IN < V CCIO | - | - | 10 | μA |
| I PU | I/O Active Pull-up Current | 0 < V IN < 0.7 V CCIO | -30 | - | -309 | μA |
| I PD | I/O Active Pull-down Current | V IL (MAX) < V IN < V CCIO | 30 | - | 305 | μA |
| I BHLS | Bus Hold Low sustaining current | V IN = V IL (MAX) | 30 | - | - | μA |
| I BHHS | Bus Hold High sustaining current | V IN = 0.7V CCIO | -30 | - | - | μA |
| I BHLO | Bus Hold Low Overdrive current | 0 V IN V CCIO | - | - | 305 | μA |
| I BHHO | Bus Hold High Overdrive current | 0 V IN V CCIO | - | - | -309 | μA |
| V BHT 3 | Bus Hold Trip Points | V IL (MAX) | - | V IH (MIN) | V | |
| C1 | I/O Capacitance 2 | V CCIO = 3.3 V, 2.5 V, 1.8 V, 1.5 V, 1.2 V, V CC = Typ., V IO = 0 to V IH (MAX) | 3 | 5 | 9 | pF |
| C2 | Dedicated Input Capacitance 2 | V CCIO = 3.3 V, 2.5 V, 1.8 V, 1.5 V, 1.2 V, V CC = Typ., V IO = 0 to V IH (MAX) | 3 | 5.5 | 7 | pF |
| V HYST | Hysteresis for Schmitt Trigger Inputs 5 | V CCIO = 3.3 V, Hysteresis = Large | - | 450 | - | mV |
| V HYST | Hysteresis for Schmitt Trigger Inputs 5 | V CCIO = 2.5 V, Hysteresis = Large | - | 250 | - | mV |
| V HYST | Hysteresis for Schmitt Trigger Inputs 5 | V CCIO = 1.8 V, Hysteresis = Large | - | 125 | - | mV |
| V HYST | Hysteresis for Schmitt Trigger Inputs 5 | V CCIO = 1.5 V, Hysteresis = Large | - | 100 | - | mV |
| V HYST | Hysteresis for Schmitt Trigger Inputs 5 | V CCIO = 3.3 V, Hysteresis = Small | - | 250 | - | mV |
| V HYST | Hysteresis for Schmitt Trigger Inputs 5 | V CCIO = 2.5 V, Hysteresis = Small | - | 150 | - | mV |
| V HYST | Hysteresis for Schmitt Trigger Inputs 5 | V CCIO = 1.8 V, Hysteresis = Small | - | 60 | - | mV |
| V HYST | Hysteresis for Schmitt Trigger Inputs 5 | V CCIO = 1.5 V, Hysteresis = Small | - | 40 | - | mV |
Absolute Maximum Ratings
| MachXO2 ZE/HE (1.2 V) | MachXO2 HC (2.5 V / 3.3 V) | |
|---|---|---|
| Supply Voltage V CC . . . . . . . . . . . | . . . .-0.5 V to 1.32 V . . . | . . . . .-0.5 V to 3.75 V |
| Output Supply Voltage V CCIO . . . | . . . .-0.5 V to 3.75 V . . . | . . . . .-0.5 V to 3.75 V |
| I/O Tri-state Voltage Applied 4, 5 . . . | . . . .-0.5 V to 3.75 V . . . | . . . . .-0.5 V to 3.75 V |
| Dedicated Input Voltage Applied 4 . | . . . .-0.5 V to 3.75 V . . . | . . . . .-0.5 V to 3.75 V |
| Storage Temperature (Ambient). . | . . . -55 °C to 125 °C. . . | . . . . -55 °C to 125 °C |
| Junction Temperature (T ) . . . . . . | . . . -40 °C to 125 °C. . . . | . . . . -40 °C to 125 °C |
Recommended Operating Conditions
| Symbol | Parameter | Min. | Max. | Units |
|---|---|---|---|---|
| V CC 1 | Core Supply Voltage for 1.2 V Devices | 1.14 | 1.26 | V |
| V CC 1 | Core Supply Voltage for 2.5 V / 3.3 V Devices | 2.375 | 3.6 | V |
| V CCIO 1, 2, 3 | I/O Driver Supply Voltage | 1.14 | 3.6 | V |
| t JCOM | Junction Temperature Commercial Operation | 0 | 85 | °C |
| t JIND | Junction Temperature Industrial Operation | -40 | 100 | °C |
Thermal Information
Thermal management is recommended as part of any sound FPGA design methodology. To assess the thermal characteristics of a system, Lattice specifies a maximum allowable junction temperature in all device data sheets. Users must complete a thermal analysis of their specific design to ensure that the device and package do not exceed the junction temperature limits. Refer to the Thermal Management document to find the device/package specific thermal values.
Related Variants
The following components are covered by the same datasheet.
| Part Number | Manufacturer | Package |
|---|---|---|
| LCMXO2 | Lattice Semiconductor | — |
| LCMXO2-1200 | Lattice Semiconductor | — |
| LCMXO2-1200U | Lattice Semiconductor | — |
| LCMXO2-2000 | Lattice Semiconductor | — |
| LCMXO2-256 | Lattice Semiconductor | — |
| LCMXO2-256HC | Lattice Semiconductor | 25-ball WLC |
| LCMXO2-256ZE | Lattice Semiconductor | — |
| LCMXO2-4000 | Lattice Semiconductor | — |
| LCMXO2-640 | Lattice Semiconductor | — |
| LCMXO2-640HC | Lattice Semiconductor | — |
| LCMXO2-640U | Lattice Semiconductor | — |
| LCMXO2-640ZE | Lattice Semiconductor | — |
| LCMXO2-7000 | Lattice Semiconductor | — |
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