KSC3503

Part: KSC3503 — onsemi

Type: NPN Epitaxial Silicon Transistor

Description: High voltage NPN epitaxial silicon transistor with a collector-emitter voltage of 300 V, a high frequency of 150 MHz, and low reverse transfer capacitance of 1.8 pF.

Operating Conditions:

• Operating temperature: -50 to +150 °C
• Collector-Emitter Voltage: up to 300 V
• Collector Current (DC): up to 100 mA

Absolute Maximum Ratings:

• Max Collector-Base Voltage: 300 V
• Max Collector-Emitter Voltage: 300 V
• Max continuous Collector Current: 100 mA
• Max Junction and Storage Temperature: -50 to +150 °C

Key Specs:

• Collector-Base Breakdown Voltage (BV CBO): 300 V (min, at I C = 10 mA, I E = 0)
• Collector-Emitter Breakdown Voltage (BV CEO): 300 V (min, at I C = 1 mA, I B = 0)
• DC Current Gain (h FE): 60 (min) to 120 (max, at V CE = 10 V, I C = 10 mA)
• Collector-Emitter Saturation Voltage (V CE(sat)): 0.6 V (max, at I C = 20 mA, I B = 2 mA)
• Current Gain Bandwidth Product (f T): 150 MHz (typ, at V CE = 30 V, I C = 10 mA)
• Output Capacitance (C ob): 1.8 pF (typ, at V CB = 30 V, f = 1 MHz)
• Collector Cut-Off Current (I CBO): 0.1 mA (max, at V CB = 200 V, I E = 0)

Features:

• High Voltage: VCEO = 300 V
• Low Reverse Transfer Capacitance: Cre = 1.8 pF
• Excellent Gain Linearity for Low THD
• Full Thermal and Electrical Spice Models are Available
• High Frequency: 150 MHz
• Complement to KSA1381
• Pb-Free and RoHS Compliant

Applications:

• CRT Display, Video Output
• Audio, Voltage Amplifier and Current Source
• General Purpose Amplifier

Package:

• TO-126-3LD (Pb-Free)

• High Voltage: VCEO = 300 V
• Low Reverse Transfer Capacitance: Cre = 1.8 pF at V CB = 30 V
• ·
• Excellent Gain Linearity for Low THD
• Full Thermal and Electrical Spice Models are Available
• High Frequency: 150 MHz
• Complement to KSA1381
• These Devices are Pb -Free and are RoHS Compliant

• CRT Display, Video Output
• Audio, Voltage Amplifier and Current Source
• General Purpose Amplifier

KSC3503 Pinout

Package: TO-126-3LD

Notes

• KSC3503 is an NPN epitaxial silicon transistor in a TO-126-3LD (3-lead) package.
• This is a discrete transistor with three leads: Emitter, Collector, and Base.
• Maximum ratings: VCEO = 300 V, IC = 100 mA (DC), PC = 7 W @ TC = 25°C.
• Complement device: KSA1381 (PNP).

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.

1. Pulse Test: Pulse Width ≤ 300 m s, Duty Cycle ≤ 2%

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.

(T A = 25 ° C unless otherwise noted)

1. Device mounted on minimum pad size.