KSC3503
The KSC3503 is an electronic component from onsemi. View the full KSC3503 datasheet below including electrical characteristics, absolute maximum ratings.
Manufacturer
onsemi
Overview
Part: KSC3503 — onsemi
Type: NPN Epitaxial Silicon Transistor
Description: High voltage (VCEO = 300 V), high frequency (150 MHz) NPN epitaxial silicon transistor with low reverse transfer capacitance, suitable for video output, audio, and general purpose amplifier applications.
Operating Conditions:
- Operating temperature: -50 to +150 °C
- Max DC collector current: 100 mA
Absolute Maximum Ratings:
- Collector-Base Voltage (BV CBO): 300 V
- Collector-Emitter Voltage (BV CEO): 300 V
- Max continuous collector current: 100 mA
- Max junction and storage temperature: -50 to +150 °C
Key Specs:
- Collector-Emitter Breakdown Voltage (BV CEO): 300 V (min, at I C = 1 mA, I B = 0)
- Collector-Base Breakdown Voltage (BV CBO): 300 V (min, at I C = 10 mA, I E = 0)
- Emitter-Base Breakdown Voltage (BV EBO): 5 V (min, at I E = 10 mA, I C = 0)
- DC Current Gain (h FE): 60 (min) to 120 (max) (at V CE = 10 V, I C = 10 mA)
- Collector-Emitter Saturation Voltage (V CE(sat)): 0.6 V (max, at I C = 20 mA, I B = 2 mA)
- Current Gain Bandwidth Product (f T): 150 MHz (typ, at V CE = 30 V, I C = 10 mA)
- Output Capacitance (C ob): 1.8 pF (typ, at V CB = 30 V, f = 1 MHz)
Features:
- High Voltage: VCEO = 300 V
- Low Reverse Transfer Capacitance: Cre = 1.8 pF at V CB = 30 V
- Excellent Gain Linearity for Low THD
- Full Thermal and Electrical Spice Models are Available
- High Frequency: 150 MHz
- Complement to KSA1381
- Pb-Free and RoHS Compliant
Applications:
- CRT Display, Video Output
- Audio, Voltage Amplifier and Current Source
- General Purpose Amplifier
Package:
- TO-126-3LD (Pb-Free)
Features
- High Voltage: VCEO = 300 V
- Low Reverse Transfer Capacitance: Cre = 1.8 pF at V CB = 30 V
- ·
- Excellent Gain Linearity for Low THD
- Full Thermal and Electrical Spice Models are Available
- High Frequency: 150 MHz
- Complement to KSA1381
- These Devices are Pb -Free and are RoHS Compliant
Applications
- CRT Display, Video Output
- Audio, Voltage Amplifier and Current Source
- General Purpose Amplifier
Electrical Characteristics
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| BV CBO | Collector - Base Breakdown Voltage | I C = 10 m A, I E = 0 | 300 | V | ||
| BV CEO | Collector - Emitter Breakdown Voltage | I C = 1 mA, I B = 0 | 300 | V | ||
| BV EBO | Emitter - Base Breakdown Voltage | I E = 10 m A, I C = 0 | 5 | V | ||
| I CBO | Collector Cut - Off Current | V CB = 200 V, I E = 0 | 0.1 | m A | ||
| I EBO | Emitter Cut - Off Current | V EB = 4 V, I C = 0 | 0.1 | m A | ||
| h FE | DC Current Gain | V CE = 10 V, I C = 10 mA | 60 | 120 | ||
| V CE (sat) | Collector - Emitter Saturation Voltage | I C = 20 mA, I B = 2 mA | 0.6 | V | ||
| V BE (sat) | Base - Emitter Saturation Voltage | I C = 20 mA, I B = 2 mA | 1 | V | ||
| f T | Current Gain Bandwidth Product | V CE = 30 V, I C = 10 mA | 150 | MHz | ||
| C ob | Output Capacitance | V CB = 30 V, f = 1 MHz | 2.6 | pF | ||
| C ob | Output Capacitance | V CB = 30 V, f = 1 MHz | 1.8 | pF |
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.
- Pulse Test: Pulse Width ≤ 300 m s, Duty Cycle ≤ 2%
Absolute Maximum Ratings
| Parameter | Symbol | Ratings | Units |
|---|---|---|---|
| Collector - Base Voltage | BV CBO | 300 | V |
| Collector - Emitter Voltage | BV CEO | 300 | V |
| Emitter - Base Voltage | BV EBO | 5 | V |
| Collector Current (DC) | I C | 100 | mA |
| Collector Current (Pulse) | I CP | 200 | mA |
| Total Device Dissipation, T C = 25 ° C T C = 125 ° C | P C | 7 1.2 | W W |
| Junction and Storage Temperature | T J , T STG | - 50 ~ +150 | ° C |
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
Thermal Information
(T A = 25 ° C unless otherwise noted)
| Parameter | Symbol | Max. | Units |
|---|---|---|---|
| Thermal Resistance, Junction to Case | R q JC | 17.8 | ° C/W |
- Device mounted on minimum pad size.
Related Variants
The following components are covered by the same datasheet.
| Part Number | Manufacturer | Package |
|---|---|---|
| C5331602 | — | — |
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