CC1310F64RHB
Ultra-Low-Power Sub-1 GHz Wireless MCUThe CC1310F64RHB is a ultra-low-power sub-1 ghz wireless mcu from Texas Instruments. View the full CC1310F64RHB datasheet below including key specifications, electrical characteristics, absolute maximum ratings.
CC1310F64RHB shares its datasheet with CC1310F128RGZ, whose page lists every part number it covers.
Official CC1310F64RHB datasheet (PDF) — the source this page was extracted from.
CC1310F64RHB Key Specifications
| Parameter | Value |
|---|---|
| ADC | 12-bit, 200 ksamples/s, 8-channel |
| CPU | Arm Cortex-M3, up to 48 MHz |
| SRAM | 20KB ultra-low-leakage SRAM + 8KB cache/GP RAM |
| Security | AES-128, TRNG |
| RX Current | 5.4 mA |
| Flash Memory | 64KB |
| Debug Interface | 2-pin cJTAG and JTAG |
| Frequency Bands | 315, 433, 470, 500, 779, 868, 915, 920 MHz ISM/SRD |
| Standby Current | 0.7 μA (RTC running, RAM and CPU retention) |
| Max Output Power | +15 dBm |
| Shutdown Current | 185 nA |
| Package Dimensions | 5.00 mm × 5.00 mm |
| Receiver Sensitivity | -124 dBm (long-range mode), -110 dBm at 50 kbps |
| Supply Voltage Range | 1.8V to 3.8V |
| TX Current At +10 DBm | 13.4 mA |
| Sensor Controller SRAM | 2KB |
| Active-Mode MCU Current | 2.5 mA (51 μA/MHz) at 48 MHz |
| Communication Interfaces | UART, 2x SSI (SPI/MICROWIRE/TI), I2C, I2S |
| GPIO Count (RHB Package) | 15 |
CC1310F64RHB Overview
Part: CC1310F128RGZR — Texas Instruments
Type: Sub-1 GHz Wireless MCU (Arm Cortex-M3 with integrated RF transceiver)
Description: SimpleLink ultra-low-power Sub-1 GHz wireless MCU with a 48 MHz Arm Cortex-M3, 128 KB flash, 20 KB ultra-low-leakage SRAM, 1.8–3.8 V supply, and RF output up to +15 dBm in a 7 mm × 7 mm VQFN48 package.
Operating Conditions:
- Supply voltage (VDDS): 1.8–3.8 V
- Ambient temperature: -40 to 85 °C
- Max clock speed: 48 MHz
- VDDS2/VDDS3: 1.8–3.8 V when VDDS < 2.7 V; 1.9–3.8 V when VDDS ≥ 2.7 V
Absolute Maximum Ratings:
- Max supply voltage (VDDS, VDDS2, VDDS3): 4.1 V
- Voltage on any digital pin: VDDSn + 0.3 V, max 4.1 V
- Voltage on crystal oscillator pins: VDDR + 0.3 V, max 2.25 V
- Input RF level: 10 dBm
- Storage temperature: -40 to 150 °C
Key Specs:
- RX current: 5.4 mA
- TX current at +10 dBm: 13.4 mA
- Active-mode MCU at 48 MHz running CoreMark: 2.5 mA (51 μA/MHz)
- Standby current: 0.7 μA (RTC running, RAM and CPU retention)
- Shutdown current: 185 nA (wakeup on external events)
- Receiver sensitivity: -124 dBm in long-range mode, -110 dBm at 50 kbps
- Selectivity (±100 kHz): 56 dB; blocking (±10 MHz): 90 dB
- Programmable output power: up to +15 dBm
- ADC: 12-bit, 200 ksamples/s, 8-channel analog MUX
- CoreMark score: 142
Features:
- Arm Cortex-M3 main CPU with 8 KB cache SRAM (or general-purpose RAM)
- Autonomous 16-bit ultra-low-power sensor controller with 2 KB SRAM
- Radio Controller (Cortex-M0) handling RF protocol commands
- On-chip DC/DC converter
- Any digital peripheral pin can be routed to any GPIO (30 GPIOs in RGZ)
- Four general-purpose timer modules (eight 16-bit or four 32-bit)
- UART, 2× SSI (SPI, MICROWIRE, TI), I2C, I2S
- Continuous-time comparator, ultra-low-power clocked comparator, programmable current source
- AES-128 security module and true random number generator
- Capacitive sensing support for eight buttons
- Integrated temperature sensor
- cJTAG and JTAG debugging; over-the-air update support
- Supports Wireless M-Bus (EN 13757-4) and IEEE 802.15.4g PHY
- Works with the SimpleLink CC1190 range extender
Applications:
- 315/433/470/500/779/868/915/920 MHz ISM and SRD systems
- Home and building automation
- Wireless alarm and security systems
- Industrial monitoring and control
- Smart grid and automatic meter reading
- Wireless healthcare
- Wireless sensor networks and active RFID
- Electronic shelf labels
- Energy-harvesting and long-range sensor applications
- Heat-cost allocators
Package:
- RGZ VQFN-48, 7.00 mm × 7.00 mm (30 GPIOs)
CC1310F64RHB Features
1
- Microcontroller
- -Powerful Arm ® Cortex ® -M3 Processor
- -EEMBC CoreMark ® Score: 142
- -EEMBC ULPBench™ Score: 158
- -Clock Speed up to 48-MHz
- -32KB, 64KB, and 128KB of In-System Programmable Flash
- -8KB of SRAM for Cache (or as General-Purpose RAM)
- -20KB of Ultra-Low-Leakage SRAM
- -2-Pin cJTAG and JTAG Debugging
- -Supports Over-the-Air (OTA) Update
- Ultra-Low-Power Sensor Controller
- -Can Run Autonomously From the Rest of the System
- -16-Bit Architecture
- -2KB of Ultra-Low-Leakage SRAM for Code and Data
- Efficient Code-Size Architecture, Placing Parts of TI-RTOS, Drivers, and Bootloader in ROM
- RoHS-Compliant Package
- -7-mm × 7-mm RGZ VQFN48 (30 GPIOs)
- -5-mm × 5-mm RHB VQFN32 (15 GPIOs)
- -4-mm × 4-mm RSM VQFN32 (10 GPIOs)
- Peripherals
- -All Digital Peripheral Pins Can Be Routed to Any GPIO
- -Four General-Purpose Timer Modules (Eight 16-Bit or Four 32-Bit Timers, PWM Each)
- -12-Bit ADC, 200 ksamples/s, 8-Channel Analog MUX
- -Continuous Time Comparator
- -Ultra-Low-Power Clocked Comparator
- -Programmable Current Source
- UART
- -2× SSI (SPI, MICROWIRE, TI)
- -I 2 C, I2S
- -Real-Time Clock (RTC)
- -AES-128 Security Module
- -True Random Number Generator (TRNG)
- -Support for Eight Capacitive Sensing Buttons
- -Integrated Temperature Sensor
SPACER
SPACER
SPACER
Technical
Documents SPACER
- External System
- -On-Chip Internal DC/DC Converter
- -Seamless Integration With the SimpleLink™ CC1190 Range Extender
- Low Power
- -Wide Supply Voltage Range: 1.8 to 3.8 V
- -RX: 5.4 mA
- -TX at +10 dBm: 13.4 mA
- -Active-Mode MCU 48 MHz Running Coremark: 2.5 mA (51 μA/MHz)
- -Active-Mode MCU: 48.5 CoreMark/mA
- -Active-Mode Sensor Controller at 24 MHz: 0.4 mA + 8.2 μA/MHz
- -Sensor Controller, One Wakeup Every Second Performing One 12-Bit ADC Sampling: 0.95 μA
- -Standby: 0.7 μA (RTC Running and RAM and CPU Retention)
- -Shutdown: 185 nA (Wakeup on External Events)
- RF Section
- -Excellent Receiver Sensitivity -124 dBm Using Long-Range Mode, -110 dBm at 50 kbps
- -Excellent Selectivity (±100 kHz): 56 dB
- -Excellent Blocking Performance (±10 MHz): 90 dB
- -Programmable Output Power up to +15 dBm
- -Single-Ended or Differential RF Interface
- -Suitable for Systems Targeting Compliance With Worldwide Radio Frequency Regulations
- -ETSI EN 300 220, EN 303 204 (Europe)
- -FCC CFR47 Part 15 (US)
- -ARIB STD-T108 (Japan)
- -Wireless M-Bus (EN 13757-4) and IEEE ® 802.15.4g PHY
- Tools and Development Environment
- -Full-Feature and Low-Cost Development Kits
- -Multiple Reference Designs for Different RF Configurations
- -Packet Sniffer PC Software
- -Sensor Controller Studio
- -SmartRF™ Studio
- -SmartRF Flash Programmer 2
- -IAR Embedded Workbench ® for Arm
- -Code Composer Studio™ (CCS) IDE
- -CCS UniFlash
CC1310F64RHB Applications
- 315-, 433-, 470-, 500-, 779-, 868-, 915-, 920-MHz ISM and SRD Systems
- Low-Power Wireless Systems With 50-kHz to 5-MHz Channel Spacing
- Home and Building Automation
- Wireless Alarm and Security Systems
- Industrial Monitoring and Control
- Smart Grid and Automatic Meter Reading
- Wireless Healthcare Applications
CC1310F64RHB Electrical Characteristics
Tc = 25°C, VDDS = 3.0 V, DC/DC disabled. Input voltage scaling enabled, unless otherwise noted. (1)
| PARAMETER | PARAMETER | TEST CONDITIONS | MIN TYP | MAX | UNIT |
|---|---|---|---|---|---|
| Input voltage range | 0 | V DDS | V | ||
| Resolution | 12 | Bits | |||
| Sample rate | 200 | ksamples/s | |||
| Offset | Internal 4.3-V equivalent reference (2) | 2.1 | LSB | ||
| Gain error | Internal 4.3-V equivalent reference (2) | -0.14 | LSB | ||
| DNL (3) | Differential nonlinearity | >-1 | LSB | ||
| INL (4) | Integral nonlinearity | ±2 | LSB |
CC1310F64RHB Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted) (1)(2)
| MIN | MAX | UNIT | ||
|---|---|---|---|---|
| Supply voltage (VDDS, VDDS2, and VDDS3) | Supply voltage (VDDS, VDDS2, and VDDS3) | -0.3 | 4.1 | V |
| Voltage on any digital pin (3)(4) | Voltage on any digital pin (3)(4) | -0.3 | VDDSn + 0.3, max 4.1 | V |
| Voltage on crystal oscillator pins X32K_Q1, X32K_Q2, X24M_N, and X24M_P | Voltage on crystal oscillator pins X32K_Q1, X32K_Q2, X24M_N, and X24M_P | -0.3 | VDDR + 0.3, max 2.25 | V |
| Voltage on ADC | Voltage scaling enabled | -0.3 | VDDS | |
| Voltage on ADC | Voltage scaling disabled, internal reference | -0.3 | 1.49 | V |
| Voltage on ADC | Voltage scaling disabled, VDDS as reference | -0.3 | VDDS / 2.9 | |
| Input RF level | Input RF level | 10 | dBm | |
| Storage temperature (T stg ) | Storage temperature (T stg ) | -40 | 150 | °C |
CC1310F64RHB Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
| MIN | MAX | UNIT | |||
|---|---|---|---|---|---|
| Ambient temperature | Ambient temperature | Ambient temperature | -40 | 85 | °C |
| Operating supply voltage (VDDS) | Operating supply | 1.8 | 3.8 | V | |
| voltages (VDDS2 and VDDS3) | VDDS < 2.7 V | 1.8 | 3.8 | V | |
| Operating supply voltages (VDDS2 and VDDS3) | VDDS ≥ 2.7 V | 1.9 | 3.8 | V | |
| Rising supply voltage slew rate | Rising supply voltage slew rate | Rising supply voltage slew rate | 0 | 100 | mV/μs |
| Falling supply voltage slew rate | Falling supply voltage slew rate | Falling supply voltage slew rate | 0 | 20 | mV/μs |
| Falling supply voltage slew rate, with low-power flash setting (1) | Falling supply voltage slew rate, with low-power flash setting (1) | Falling supply voltage slew rate, with low-power flash setting (1) | 3 | mV/μs | |
| Positive temperature gradient in standby (2) | No limitation for negative temperature gradient, or outside standby mode | No limitation for negative temperature gradient, or outside standby mode | 5 | °C/s |
CC1310F64RHB Thermal Information
| THERMAL METRIC (1) | THERMAL METRIC (1) | CC1310 - RSM (VQFN) - 32 PINS | CC1310 - RHB (VQFN) - 32 PINS | CC1310 - RGZ (VQFN) - 48 PINS | UNIT (2) |
|---|---|---|---|---|---|
| R θ JA | Junction-to-ambient thermal resistance | 36.9 | 32.8 | 29.6 | °C/W |
| R θ JC(top) | Junction-to-case (top) thermal resistance | 30.3 | 24.0 | 15.7 | °C/W |
| R θ JB | Junction-to-board thermal resistance | 7.6 | 6.8 | 6.2 | °C/W |
| ψ JT | Junction-to-top characterization parameter | 0.4 | 0.3 | 0.3 | °C/W |
| ψ JB | Junction-to-board characterization parameter | 7.4 | 6.8 | 6.2 | °C/W |
| R θ JC(bot) | Junction-to-case (bottom) thermal resistance | 2.1 | 1.9 | 1.9 | °C/W |
CC1310F64RHB Typical Application
Few external components are required for the operation of the CC1310 device. Figure 7-1 shows a typical application circuit.
The board layout greatly influences the RF performance of the CC1310 device.
On the Texas Instruments CC1310EM-7XD-7793 reference design, the optimal differential impedance seen from the RF pins into the balun and filter and antenna is 44 + j15.
Figure 7-1 does not show decoupling capacitors for power pins. For a complete reference design, see the product folder on www.ti.com.
Figure 7-1. CC1310 Application Circuits
Variants on the same datasheet
These parts have exact links to the same datasheet. They are candidates to compare, not verified drop-in replacements; check package, pinout and electrical limits.
| Part Number | Manufacturer | Package |
|---|---|---|
| CC1310 | Texas Instruments | — |
| CC1310F128RGZ | Texas Instruments | VQFN48 (7 mm × 7 mm) |
| CC1310F128RGZR | Texas Instruments | VQFN48 (7.00 mm × 7.00 mm) |
| CC1310F128RGZT | Texas Instruments | VQFN-48 7x7mm |
| CC1310F128RHB | Texas Instruments | VQFN32 (5 mm × 5 mm) |
| CC1310F128RHBR | Texas Instruments | 32-VFQFN Exposed Pad |
| CC1310F128RHBT | Texas Instruments | VQFN-32 |
| CC1310F128RSM | Texas Instruments | VQFN32 (4 mm × 4 mm) |
| CC1310F128RSMR | Texas Instruments | VQFN-32 4x4mm |
| CC1310F128RSMT | Texas Instruments | VQFN-32 4x4mm |
| CC1310F32RGZ | Texas Instruments | VQFN48 (7 mm × 7 mm) |
| CC1310F32RHB | Texas Instruments | VQFN32 (5 mm × 5 mm) |
| CC1310F32RSM | Texas Instruments | VQFN32 (4 mm × 4 mm) |
| CC1310F64RGZ | Texas Instruments | VQFN48 (7 mm × 7 mm) |
| CC1310F64RSM | Texas Instruments | VQFN32 (4 mm × 4 mm) |
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