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CC1310F128RGZ

Ultra-Low-Power Sub-1 GHz Wireless MCU

The CC1310F128RGZ is a ultra-low-power sub-1 ghz wireless mcu from Texas Instruments. View the full CC1310F128RGZ datasheet below including electrical characteristics, absolute maximum ratings.

Manufacturer

Texas Instruments

Category

Ultra-Low-Power Sub-1 GHz Wireless MCU

Package

VQFN48 (7 mm × 7 mm)

Overview

Part: CC1310 — Texas Instruments Type: Ultra-Low-Power Sub-1 GHz Wireless MCU

Description: The CC1310 is a cost-effective, ultra-low-power Sub-1 GHz RF device from Texas Instruments, featuring a 48-MHz Arm Cortex-M3 microcontroller, up to 128 KB of Flash, 20 KB of SRAM, and a dedicated ultra-low-power sensor controller, designed for long-range operation on small coin-cell batteries.

Operating Conditions:

  • Supply voltage: 1.8 to 3.8 V
  • Operating temperature: -40 to +125 °C
  • Max clock speed: 48 MHz

Absolute Maximum Ratings:

  • Max supply voltage: 4.1 V
  • Max junction/storage temperature: 150 °C

Key Specs:

  • CoreMark Score: 142
  • ULPBench Score: 158
  • Flash Memory: 32KB, 64KB, 128KB
  • SRAM: 20KB (ultra-low-leakage) + 8KB (for cache/GP RAM)
  • RX Current: 5.4 mA
  • TX Current (+10 dBm): 13.4 mA
  • Active-Mode MCU Current (48 MHz): 2.5 mA (51 μA/MHz)
  • Standby Current: 0.7 μA (RTC Running, RAM and CPU Retention)
  • Shutdown Current: 185 nA (Wakeup on External Events)
  • Receiver Sensitivity: -124 dBm (Long-Range Mode), -110 dBm (50 kbps)
  • Programmable Output Power: up to +15 dBm
  • ADC: 12-Bit, 200 ksamples/s, 8-Channel Analog MUX

Features:

  • Powerful Arm Cortex-M3 Processor
  • Ultra-Low-Power Sensor Controller (16-bit architecture, 2KB SRAM)
  • Efficient Code-Size Architecture (TI-RTOS, Drivers, Bootloader in ROM)
  • On-Chip Internal DC/DC Converter
  • AES-128 Security Module and True Random Number Generator (TRNG)
  • Support for Eight Capacitive Sensing Buttons
  • Integrated Temperature Sensor
  • UART, 2x SSI (SPI, MICROWIRE, TI), I2C, I2S, Real-Time Clock (RTC)

Applications:

  • 315-, 433-, 470-, 500-, 779-, 868-, 915-, 920-MHz ISM and SRD Systems
  • Low-Power Wireless Systems With 50-kHz to 5-MHz Channel Spacing
  • Home and Building Automation
  • Wireless Alarm and Security Systems
  • Industrial Monitoring and Control
  • Smart Grid and Automatic Meter Reading
  • Wireless Healthcare Applications
  • Wireless Sensor Networks
  • Active RFID
  • IEEE 802.15.4g, IP-Enabled Smart Objects (6LoWPAN), Wireless M-Bus, KNX Systems, Wi-SUN™, and Proprietary Systems
  • Energy-Harvesting Applications
  • Electronic Shelf Label (ESL)
  • Long-Range Sensor Applications
  • Heat-Cost Allocators

Package:

  • VQFN48 (7-mm × 7-mm RGZ)
  • VQFN32 (5-mm × 5-mm RHB)
  • VQFN32 (4-mm × 4-mm RSM)

Features

1

  • Microcontroller
  • -Powerful Arm ® Cortex ® -M3 Processor
  • -EEMBC CoreMark ® Score: 142
  • -EEMBC ULPBench™ Score: 158
  • -Clock Speed up to 48-MHz
  • -32KB, 64KB, and 128KB of In-System Programmable Flash
  • -8KB of SRAM for Cache (or as General-Purpose RAM)
  • -20KB of Ultra-Low-Leakage SRAM
  • -2-Pin cJTAG and JTAG Debugging
  • -Supports Over-the-Air (OTA) Update
  • Ultra-Low-Power Sensor Controller
  • -Can Run Autonomously From the Rest of the System
  • -16-Bit Architecture
  • -2KB of Ultra-Low-Leakage SRAM for Code and Data
  • Efficient Code-Size Architecture, Placing Parts of TI-RTOS, Drivers, and Bootloader in ROM
  • RoHS-Compliant Package
  • -7-mm × 7-mm RGZ VQFN48 (30 GPIOs)
  • -5-mm × 5-mm RHB VQFN32 (15 GPIOs)
  • -4-mm × 4-mm RSM VQFN32 (10 GPIOs)
  • Peripherals
  • -All Digital Peripheral Pins Can Be Routed to Any GPIO
  • -Four General-Purpose Timer Modules (Eight 16-Bit or Four 32-Bit Timers, PWM Each)
  • -12-Bit ADC, 200 ksamples/s, 8-Channel Analog MUX
  • -Continuous Time Comparator
  • -Ultra-Low-Power Clocked Comparator
  • -Programmable Current Source
  • UART
  • -2× SSI (SPI, MICROWIRE, TI)
  • -I 2 C, I2S
  • -Real-Time Clock (RTC)
  • -AES-128 Security Module
  • -True Random Number Generator (TRNG)
  • -Support for Eight Capacitive Sensing Buttons
  • -Integrated Temperature Sensor

SPACER

SPACER

SPACER

Technical

Documents

SPACER

  • External System
  • -On-Chip Internal DC/DC Converter
  • -Seamless Integration With the SimpleLink™ CC1190 Range Extender
  • Low Power
  • -Wide Supply Voltage Range: 1.8 to 3.8 V
  • -RX: 5.4 mA
  • -TX at +10 dBm: 13.4 mA
  • -Active-Mode MCU 48 MHz Running Coremark: 2.5 mA (51 μA/MHz)
  • -Active-Mode MCU: 48.5 CoreMark/mA
  • -Active-Mode Sensor Controller at 24 MHz: 0.4 mA + 8.2 μA/MHz
  • -Sensor Controller, One Wakeup Every Second Performing One 12-Bit ADC Sampling: 0.95 μA
  • -Standby: 0.7 μA (RTC Running and RAM and CPU Retention)
  • -Shutdown: 185 nA (Wakeup on External Events)
  • RF Section
  • -Excellent Receiver Sensitivity -124 dBm Using Long-Range Mode, -110 dBm at 50 kbps
  • -Excellent Selectivity (±100 kHz): 56 dB
  • -Excellent Blocking Performance (±10 MHz): 90 dB
  • -Programmable Output Power up to +15 dBm
  • -Single-Ended or Differential RF Interface
  • -Suitable for Systems Targeting Compliance With Worldwide Radio Frequency Regulations
  • -ETSI EN 300 220, EN 303 204 (Europe)
  • -FCC CFR47 Part 15 (US)
  • -ARIB STD-T108 (Japan)
  • -Wireless M-Bus (EN 13757-4) and IEEE ® 802.15.4g PHY
  • Tools and Development Environment
  • -Full-Feature and Low-Cost Development Kits
  • -Multiple Reference Designs for Different RF Configurations
  • -Packet Sniffer PC Software
  • -Sensor Controller Studio
  • -SmartRF™ Studio
  • -SmartRF Flash Programmer 2
  • -IAR Embedded Workbench ® for Arm
  • -Code Composer Studio™ (CCS) IDE
  • -CCS UniFlash

Applications

  • 315-, 433-, 470-, 500-, 779-, 868-, 915-, 920-MHz ISM and SRD Systems
  • Low-Power Wireless Systems With 50-kHz to 5-MHz Channel Spacing
  • Home and Building Automation
  • Wireless Alarm and Security Systems
  • Industrial Monitoring and Control
  • Smart Grid and Automatic Meter Reading
  • Wireless Healthcare Applications

Electrical Characteristics

Tc = 25°C, VDDS = 3.0 V, DC/DC disabled. Input voltage scaling enabled, unless otherwise noted. (1)

PARAMETERPARAMETERTEST CONDITIONSMIN TYPMAXUNIT
Input voltage range0V DDSV
Resolution12Bits
Sample rate200ksamples/s
OffsetInternal 4.3-V equivalent reference (2)2.1LSB
Gain errorInternal 4.3-V equivalent reference (2)-0.14LSB
DNL (3)Differential nonlinearity>-1LSB
INL (4)Integral nonlinearity±2LSB

Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted) (1)(2)

MINMAXUNIT
Supply voltage (VDDS, VDDS2, and VDDS3)Supply voltage (VDDS, VDDS2, and VDDS3)-0.34.1V
Voltage on any digital pin (3)(4)Voltage on any digital pin (3)(4)-0.3VDDSn + 0.3, max 4.1V
Voltage on crystal oscillator pins X32K_Q1, X32K_Q2, X24M_N, and X24M_PVoltage on crystal oscillator pins X32K_Q1, X32K_Q2, X24M_N, and X24M_P-0.3VDDR + 0.3, max 2.25V
Voltage on ADCVoltage scaling enabled-0.3VDDS
Voltage on ADCVoltage scaling disabled, internal reference-0.31.49V
Voltage on ADCVoltage scaling disabled, VDDS as reference-0.3VDDS / 2.9
Input RF levelInput RF level10dBm
Storage temperature (T stg )Storage temperature (T stg )-40150°C

Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)

MINMAXUNIT
Ambient temperatureAmbient temperatureAmbient temperature-4085°C
Operating supply voltage (VDDS)Operating supply1.83.8V
voltages (VDDS2 and VDDS3)VDDS < 2.7 V1.83.8V
Operating supply voltages (VDDS2 and VDDS3)VDDS ≥ 2.7 V1.93.8V
Rising supply voltage slew rateRising supply voltage slew rateRising supply voltage slew rate0100mV/μs
Falling supply voltage slew rateFalling supply voltage slew rateFalling supply voltage slew rate020mV/μs
Falling supply voltage slew rate, with low-power flash setting (1)Falling supply voltage slew rate, with low-power flash setting (1)Falling supply voltage slew rate, with low-power flash setting (1)3mV/μs
Positive temperature gradient in standby (2)No limitation for negative temperature gradient, or outside standby modeNo limitation for negative temperature gradient, or outside standby mode5°C/s

Thermal Information

CC1310CC1310CC1310
THERMAL METRIC (1)THERMAL METRIC (1)RSM (VQFN)RHB (VQFN)RGZ (VQFN)
32 PINS32 PINS48 PINS
R θ JAJunction-to-ambient thermal resistance36.932.829.6
R θ JC(top)Junction-to-case (top) thermal resistance30.324.015.7
R θ JBJunction-to-board thermal resistance7.66.86.2
ψ JTJunction-to-top characterization parameter0.40.30.3
ψ JBJunction-to-board characterization parameter7.46.86.2
R θ JC(bot)Junction-to-case (bottom) thermal resistance2.11.91.9

Typical Application

Few external components are required for the operation of the CC1310 device. Figure 7-1 shows a typical application circuit.

The board layout greatly influences the RF performance of the CC1310 device.

On the Texas Instruments CC1310EM-7XD-7793 reference design, the optimal differential impedance seen from the RF pins into the balun and filter and antenna is 44 + j15.

Figure 7-1 does not show decoupling capacitors for power pins. For a complete reference design, see the product folder on www.ti.com.

Figure 7-1. CC1310 Application Circuits

Package Information

PLASTIC QUAD FLATPACK - NO LEAD

Related Variants

The following components are covered by the same datasheet.

Part NumberManufacturerPackage
CC1310Texas Instruments
CC1310F128RGZRTexas InstrumentsVQFN48 (7.00 mm × 7.00 mm)
CC1310F128RGZTTexas Instruments
CC1310F128RHBTexas InstrumentsVQFN32 (5 mm × 5 mm)
CC1310F128RHBRTexas Instruments
CC1310F128RHBTTexas Instruments
CC1310F128RSMTexas InstrumentsVQFN32 (4 mm × 4 mm)
CC1310F128RSMRTexas Instruments
CC1310F128RSMTTexas Instruments
CC1310F32RGZTexas InstrumentsVQFN48 (7 mm × 7 mm)
CC1310F32RHBTexas InstrumentsVQFN32 (5 mm × 5 mm)
CC1310F32RSMTexas InstrumentsVQFN32 (4 mm × 4 mm)
CC1310F64RGZTexas InstrumentsVQFN48 (7 mm × 7 mm)
CC1310F64RHBTexas InstrumentsVQFN32 (5 mm × 5 mm)
CC1310F64RSMTexas InstrumentsVQFN32 (4 mm × 4 mm)
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