BZT52C11S

Zener Diode

The BZT52C11S is a zener diode from Nexperia. View the full BZT52C11S datasheet below including key specifications.

Official BZT52C11S datasheet (PDF) — the source this page was extracted from.

Manufacturer

BZT52C11S Key Specifications

Parameter	Value
Marking Code	CH
Forward Current IF	250 mA max
Forward Voltage VF	0.9 V max at IF = 10 mA
Reverse Current IR	0.1 µA max at VR = 8 V
Diode Capacitance Cd	85 pF max (f = 1 MHz, VR = 0 V)
Junction Temperature	150 °C max
Total Power Dissipation	350 mW (standard footprint); 590 mW (1 cm² cathode pad), Tamb ≤ 25 °C
Zener Voltage (Nominal)	11 V
Storage Temperature Range	-65 °C to +150 °C
Temperature Coefficient SZ	5.4 to 9.0 mV/K at IZ = 5 mA
Operating Temperature Range	-55 °C to +150 °C
Thermal Resistance Rth(J-A)	350 K/W (free air, standard footprint); 210 K/W (1 cm² cathode pad)
Differential Resistance Rdif	70 Ω max (IZ = 1 mA), 10 Ω max (IZ = 5 mA)
Thermal Resistance Rth(J-Sp)	55 K/W
Working Voltage VZ (BZT52-C11)	10.4 V to 11.6 V at IZ = 5 mA
Non-Repetitive Peak Reverse Power PZSM	40 W max
Non-Repetitive Peak Reverse Current IZSM	2.5 A (tp = 100 µs)

BZT52C11S Overview

Part: BZT52-B2V4 to BZT52-C75 — Nexperia B.V.

Type: General-purpose Zener Diode

Description: General-purpose Zener diodes in an SOD123 package, offering a wide working voltage range from 2.4 V to 75 V with ±2 % and approximately ±5 % tolerance series, and a total power dissipation up to 590 mW.

Operating Conditions:

Working voltage range: nominal 2.4 V to 75 V
Ambient temperature: -55 to +150 °C
Junction temperature: up to 150 °C

Absolute Maximum Ratings:

Max forward current: 250 mA
Max total power dissipation: 590 mW (T amb ≤ 25 °C, mounting pad for cathode 1 cm²)
Max junction/storage temperature: 150 °C

Key Specs:

Forward voltage (V F): 0.9 V (I F = 10 mA)
Total power dissipation (P tot): 350 mW (T amb ≤ 25 °C, standard footprint)
Working voltage (V Z): 2.2 V to 79.0 V (depending on variant and tolerance, at I Z = 5 mA or 2 mA)
Reverse current (I R): 0.05 μA to 85 μA (depending on variant and V R)
Diode capacitance (C d): 35 pF to 450 pF (f = 1 MHz; V R = 0 V)
Non-repetitive peak reverse power dissipation (P ZSM): 40 W
Non-repetitive peak reverse current (I ZSM): 0.20 A to 6.0 A (t p = 100 μs; T amb = 25 °C)

Features:

Total power dissipation: ≤ 590 mW
Two tolerance series: ±2 % and approximately ±5 %
Wide working voltage range: nominal 2.4 V to 75 V (E24 range)
Small plastic package suitable for surface-mounted design
Low differential resistance

Applications:

General regulation functions

Package:

SOD123 (plastic surface-mounted package; 2 leads)

BZT52C11S Features

Total power dissipation: ≤ 590 mW
Two tolerance series: ±2 % and approximately ±5 %
Wide working voltage range: nominal 2.4 V to 75 V (E24 range)
Small plastic package suitable for surface-mounted design
Low differential resistance

BZT52C11S Thermal Information

Symbol	Parameter	Conditions	Min	Typ	Max	Unit
R th(j-a)	thermal resistance from junction to ambient	in free air	[1] -	-	350	K/W
R th(j-a)			[2] -	-	210	K/W
R th(j-sp)	thermal resistance from junction to solder point		[3] -	-	55	K/W

Voltage regulator diodes

BZT52C11S Package Information

Fig. 11. Package outline SOD123

Fig. 10. Reverse current as a function of reverse voltage; typical values (BZT52-B/C27 to -B/C75)

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