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BZT52-B15S_R1_00001

The BZT52-B15S_R1_00001 is an electronic component. View the full BZT52-B15S_R1_00001 datasheet below including key specifications.

BZT52-B15S_R1_00001 shares its datasheet with BZT52C11S, whose page lists every part number it covers.

Official BZT52-B15S_R1_00001 datasheet (PDF) — the source this page was extracted from.

BZT52-B15S_R1_00001 Key Specifications

ParameterValue
Forward voltage (V F)0.9 V (I F = 10 mA)
Total power dissipation (P tot)350 mW (T amb ≤ 25 °C, standard footprint)
Working voltage (V Z)2.2 V to 79.0 V (depending on variant and tolerance, at I Z = 5 mA or 2 mA)
Reverse current (I R)0.05 μA to 85 μA (depending on variant and V R)
Diode capacitance (C d)35 pF to 450 pF (f = 1 MHz; V R = 0 V)
Non-repetitive peak reverse power dissipation (P ZSM)40 W
Non-repetitive peak reverse current (I ZSM)0.20 A to 6.0 A (t p = 100 μs; T amb = 25 °C)

BZT52-B15S_R1_00001 Overview

Part: BZT52-B2V4 to BZT52-C75 — Nexperia B.V.

Type: General-purpose Zener Diode

Description: General-purpose Zener diodes in an SOD123 package, offering a wide working voltage range from 2.4 V to 75 V with ±2 % and approximately ±5 % tolerance series, and a total power dissipation up to 590 mW.

Operating Conditions:

  • Working voltage range: nominal 2.4 V to 75 V
  • Ambient temperature: -55 to +150 °C
  • Junction temperature: up to 150 °C

Absolute Maximum Ratings:

  • Max forward current: 250 mA
  • Max total power dissipation: 590 mW (T amb ≤ 25 °C, mounting pad for cathode 1 cm²)
  • Max junction/storage temperature: 150 °C

Key Specs:

  • Forward voltage (V F): 0.9 V (I F = 10 mA)
  • Total power dissipation (P tot): 350 mW (T amb ≤ 25 °C, standard footprint)
  • Working voltage (V Z): 2.2 V to 79.0 V (depending on variant and tolerance, at I Z = 5 mA or 2 mA)
  • Reverse current (I R): 0.05 μA to 85 μA (depending on variant and V R)
  • Diode capacitance (C d): 35 pF to 450 pF (f = 1 MHz; V R = 0 V)
  • Non-repetitive peak reverse power dissipation (P ZSM): 40 W
  • Non-repetitive peak reverse current (I ZSM): 0.20 A to 6.0 A (t p = 100 μs; T amb = 25 °C)

Features:

  • Total power dissipation: ≤ 590 mW
  • Two tolerance series: ±2 % and approximately ±5 %
  • Wide working voltage range: nominal 2.4 V to 75 V (E24 range)
  • Small plastic package suitable for surface-mounted design
  • Low differential resistance

Applications:

  • General regulation functions

Package:

  • SOD123 (plastic surface-mounted package; 2 leads)

BZT52-B15S_R1_00001 Features

  • Total power dissipation: ≤ 590 mW
  • Two tolerance series: ±2 % and approximately ±5 %
  • Wide working voltage range: nominal 2.4 V to 75 V (E24 range)
  • Small plastic package suitable for surface-mounted design
  • Low differential resistance

BZT52-B15S_R1_00001 Thermal Information

SymbolParameterConditionsMinTypMaxUnit
R th(j-a)thermal resistance from junction to ambientin free air[1] --350K/W
R th(j-a)[2] --210K/W
R th(j-sp)thermal resistance from junction to solder point[3] --55K/W

Voltage regulator diodes

BZT52-B15S_R1_00001 Package Information

Fig. 11. Package outline SOD123

Fig. 10. Reverse current as a function of reverse voltage; typical values (BZT52-B/C27 to -B/C75)

Data on this page is extracted from publicly available manufacturer datasheets using automated tools including AI. It may contain errors or omissions. Always verify specifications against the official manufacturer datasheet before making design or purchasing decisions. See our Terms of Service. Rights holders can submit a takedown request.

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