BZT52-B15S_R1_00001
The BZT52-B15S_R1_00001 is an electronic component. View the full BZT52-B15S_R1_00001 datasheet below including key specifications.
BZT52-B15S_R1_00001 shares its datasheet with BZT52C11S, whose page lists every part number it covers.
Official BZT52-B15S_R1_00001 datasheet (PDF) — the source this page was extracted from.
BZT52-B15S_R1_00001 Key Specifications
| Parameter | Value |
|---|---|
| Forward voltage (V F) | 0.9 V (I F = 10 mA) |
| Total power dissipation (P tot) | 350 mW (T amb ≤ 25 °C, standard footprint) |
| Working voltage (V Z) | 2.2 V to 79.0 V (depending on variant and tolerance, at I Z = 5 mA or 2 mA) |
| Reverse current (I R) | 0.05 μA to 85 μA (depending on variant and V R) |
| Diode capacitance (C d) | 35 pF to 450 pF (f = 1 MHz; V R = 0 V) |
| Non-repetitive peak reverse power dissipation (P ZSM) | 40 W |
| Non-repetitive peak reverse current (I ZSM) | 0.20 A to 6.0 A (t p = 100 μs; T amb = 25 °C) |
BZT52-B15S_R1_00001 Overview
Part: BZT52-B2V4 to BZT52-C75 — Nexperia B.V.
Type: General-purpose Zener Diode
Description: General-purpose Zener diodes in an SOD123 package, offering a wide working voltage range from 2.4 V to 75 V with ±2 % and approximately ±5 % tolerance series, and a total power dissipation up to 590 mW.
Operating Conditions:
- Working voltage range: nominal 2.4 V to 75 V
- Ambient temperature: -55 to +150 °C
- Junction temperature: up to 150 °C
Absolute Maximum Ratings:
- Max forward current: 250 mA
- Max total power dissipation: 590 mW (T amb ≤ 25 °C, mounting pad for cathode 1 cm²)
- Max junction/storage temperature: 150 °C
Key Specs:
- Forward voltage (V F): 0.9 V (I F = 10 mA)
- Total power dissipation (P tot): 350 mW (T amb ≤ 25 °C, standard footprint)
- Working voltage (V Z): 2.2 V to 79.0 V (depending on variant and tolerance, at I Z = 5 mA or 2 mA)
- Reverse current (I R): 0.05 μA to 85 μA (depending on variant and V R)
- Diode capacitance (C d): 35 pF to 450 pF (f = 1 MHz; V R = 0 V)
- Non-repetitive peak reverse power dissipation (P ZSM): 40 W
- Non-repetitive peak reverse current (I ZSM): 0.20 A to 6.0 A (t p = 100 μs; T amb = 25 °C)
Features:
- Total power dissipation: ≤ 590 mW
- Two tolerance series: ±2 % and approximately ±5 %
- Wide working voltage range: nominal 2.4 V to 75 V (E24 range)
- Small plastic package suitable for surface-mounted design
- Low differential resistance
Applications:
- General regulation functions
Package:
- SOD123 (plastic surface-mounted package; 2 leads)
BZT52-B15S_R1_00001 Features
- Total power dissipation: ≤ 590 mW
- Two tolerance series: ±2 % and approximately ±5 %
- Wide working voltage range: nominal 2.4 V to 75 V (E24 range)
- Small plastic package suitable for surface-mounted design
- Low differential resistance
BZT52-B15S_R1_00001 Thermal Information
| Symbol | Parameter | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| R th(j-a) | thermal resistance from junction to ambient | in free air | [1] - | - | 350 | K/W |
| R th(j-a) | [2] - | - | 210 | K/W | ||
| R th(j-sp) | thermal resistance from junction to solder point | [3] - | - | 55 | K/W |
Voltage regulator diodes
BZT52-B15S_R1_00001 Package Information
Fig. 11. Package outline SOD123
Fig. 10. Reverse current as a function of reverse voltage; typical values (BZT52-B/C27 to -B/C75)
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