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BAV99W

High-speed switching diodes

The BAV99W is a high-speed switching diodes from Nexperia. View the full BAV99W datasheet below including key specifications.

BAV99W shares its datasheet with BAV99,215, whose page lists every part number it covers.

Official BAV99W datasheet (PDF) — the source this page was extracted from.

Manufacturer

Nexperia

Category

Diodes

Package

SOT323

BAV99W Key Specifications

ParameterValue
Ambient Temperature Range High150 °C
Average Rectified Current215 mA
Breakdown Voltage75 V
Capacitance1.5 pF
Case/PackageSOT-23-3
China RoHSCompliant
Contact PlatingTin
Current2 A
Forward Current125 mA
Forward Voltage1.25 V
Height1.1 mm
Introduction Date1991-04-01
Lead FreeLead Free
Length6.35 mm
Lifecycle StatusProduction (Last Updated: 2 years ago)
Manufacturer Lifecycle StatusRELEASED FOR SUPPLY (Last Updated: 2 years ago)
Max Forward Surge Current (Ifsm)4 A
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Output Current215 mA
Max Power Dissipation250 mW
Max Repetitive Reverse Voltage (Vrrm)100 V
Max Reverse Voltage (DC)100 V
Max Surge Current4 A
Min Operating Temperature-65 °C
MountSurface Mount
Number of Elements2
Number of Pins3
Number of Terminals3
Peak Non-Repetitive Surge Current4 A
Peak Reverse Current500 nA
Power Dissipation250 mW
RatingsAEC-Q101
REACH SVHCYes
Recovery Time4 ns
Reverse Recovery Time4 ns
Reverse Standoff Voltage80 V
Reverse Voltage100 V
RoHSCompliant
Schedule B8541100070, 8541100070|8541100070|8541100070|8541100070|8541100070|8541100070|8541100070|8541100070|8541100070|8541100070|8541100070|8541100070|8541100070|8541100070|8541100070, 8541100070|8541100070|8541100070|8541100070|8541100070|8541100070|8541100070|8541100070|8541100070|8541100070|8541100070|8541100070|8541100070|8541100070|8541100070|8541100070|8541100070|8541100070|8541100070|8541100070|8541100070, 8541100070|8541100070|8541100070|8541100070|8541100070|8541100070|8541100070|8541100070|85
TerminationSMD/SMT
Voltage75 V
Weight4.535924 g
Width6.35 mm

BAV99W Overview

Part: BAV99 series — Nexperia

Type: High-speed switching diodes

Description: High-speed switching diodes with trr ≤ 4 ns, low leakage current, and low capacitance (Cd ≤ 1.5 pF), suitable for general-purpose and high-speed switching applications.

Operating Conditions:

  • Operating temperature: -65 to 150 °C

Absolute Maximum Ratings:

  • Max supply voltage: 100 V (repetitive peak reverse voltage)
  • Max continuous current: 215 mA (BAV99), 200 mA (BAV99S), 150 mA (BAV99W)
  • Max junction/storage temperature: 150 °C

Key Specs:

  • Reverse voltage (VR): 100 V
  • Reverse current (IR): 0.5 μA (VR = 80 V)
  • Reverse recovery time (trr): 4 ns
  • Diode capacitance (Cd): 1.5 pF (f = 1 MHz; VR = 0 V)
  • Forward voltage (VF): 715 mV (IF = 1 mA)
  • Forward voltage (VF): 1.25 V (IF = 150 mA)

Features:

  • High switching speed: trr ≤ 4 ns
  • Low leakage current
  • Small SMD plastic packages
  • Low capacitance: Cd ≤ 1.5 pF
  • Reverse voltage: VR ≤ 100 V
  • AEC-Q101 qualified
  • Reverse polarity protection

Applications:

  • High-speed switching
  • General-purpose switching

Package:

  • SOT23 (3 leads)
  • SOT363 (6 leads)
  • SOT323 (3 leads)

BAV99W Features

  • High switching speed: trr ≤ 4 ns
  • Low leakage current
  • Small SMD plastic packages

BAV99W Applications

  • High-speed switching
  • General-purpose switching

BAV99W Thermal Information

Table 7.Thermal characteristicsMaxUnit
R th(j-a)thermal resistance from junction to ambientfree air[1][2]
BAV99--500K/W
BAV99W--625K/W
R th(j-sp)thermal resistance from junction to solder point
BAV99--360K/W
BAV99S--260K/W
BAV99W--300K/W

BAV99W Package Information

Variants on the same datasheet

These parts have exact links to the same datasheet. They are candidates to compare, not verified drop-in replacements; check package, pinout and electrical limits.

Part NumberManufacturerPackage
BAV99Diotec SemiconductorTO-236-3, SC-59, SOT-23-3
BAV99,215NexperiaSOT-23
BAV99SNexperiaSOT363

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  • CH213K – WCH, Low Dropout Ideal Diode Chip
  • VMNN110CMS-TR – Stanley Electric, Infrared Emitting Diode
  • ESD5Z2.5T1G – onsemi, ESD Protection TVS Diode
  • PMEG4010CEJ – Nexperia, Schottky Barrier Rectifier
  • USBLC6-2SC6 – STMicroelectronics, ESD Protection Device

All Diodes datasheetsAll Nexperia datasheets (54)

Data on this page is extracted from publicly available manufacturer datasheets using automated tools including AI. It may contain errors or omissions. Always verify specifications against the official manufacturer datasheet before making design or purchasing decisions. See our Terms of Service. Rights holders can submit a takedown request.

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