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BAV199

Switching Diode

The BAV199 is a switching diode from Nexperia. View the full BAV199 datasheet below including key specifications, electrical characteristics, absolute maximum ratings.

Official BAV199 datasheet (PDF) — the source this page was extracted from.

Manufacturer

Nexperia

Category

Diodes

Package

SOT-23

BAV199 Key Specifications

ParameterValue
Reverse breakdown voltage V(BR)70 V min (I_R = 100 μA)
Reverse leakage current I_R5 nA max (V_R = 70 V)
Forward voltage V_F900 mV max at 1 mA, 1000 mV max at 10 mA, 1100 mV max at 50 mA, 1250 mV max at 150 mA
Diode capacitance C_D2 pF max (V_R = 0 V, f = 1 MHz)
Reverse recovery time t_rr3 μs max (I_F = I_R = 10 mA)

BAV199 Overview

Part: BAV199 — HUA XUAN YANG ELECTRONICS

Type: High-Voltage Switching Diode (Small-Signal)

Description: 70 V reverse-voltage switching diode in SOT-23 with 215 mA average rectified output current and 200 mW power dissipation.

Operating Conditions:

  • Operating temperature: Storage range −55 to +150 °C
  • Junction temperature: up to 150 °C

Absolute Maximum Ratings:

  • Max reverse voltage (non-repetitive peak / DC blocking): 70 V
  • Max forward continuous current: 500 mA
  • Max average rectified output current: 215 mA
  • Non-repetitive peak forward surge current (t = 8.3 ms): 1.0 A
  • Max power dissipation: 200 mW
  • Max junction temperature: 150 °C
  • Storage temperature range: −55 to +150 °C

Key Specs:

  • Reverse breakdown voltage V(BR): 70 V min (I_R = 100 μA)
  • Reverse leakage current I_R: 5 nA max (V_R = 70 V)
  • Forward voltage V_F: 900 mV max at 1 mA, 1000 mV max at 10 mA, 1100 mV max at 50 mA, 1250 mV max at 150 mA
  • Diode capacitance C_D: 2 pF max (V_R = 0 V, f = 1 MHz)
  • Reverse recovery time t_rr: 3 μs max (I_F = I_R = 10 mA)

Features:

  • Average rectified output current of 215 mA
  • Power dissipation of 200 mW

Applications:

  • General-purpose switching

Package:

  • SOT-23 (3-pin), 3000 pcs per reel, marking "JY"

BAV199 Features

  • z IO=215mA Average Rectified Output Current:
  • z Power Dissipation of 200mw

BAV199 Electrical Characteristics

ParameterSymbolTest conditionsMinMaxUnit
Reverse breakdown voltageV (BR)I R = 100μA70V
Reverse voltage leakage currentI RR = V 70V5nA
Forward voltageV FI F =1mA I F =10mA I F =50mA I F =150mA900 1000 1100 1250mV
Diode capacitanceC DR V =0, f=1MHz2pF
Reverse recovery timet r rI F = I R =10mA3μs

SOT-23

BAV199 Absolute Maximum Ratings

ParameterSymbolLimitUnit
Non-Repetitive Peak Reverse VoltageV RM70V
DC Blocking VoltageV R70V
Forward Continuous CurrentI FM500mA
Average Rectified Output CurrentI O215mA
Non-Repetitive Peak Forward Surge Current @t=8.3msI FSM1.0A
Power DissipationP D200mW
Junction TemperatureT J150°C
Storage Temperature RangeT STG-55~+150°C

BAV199 Package Information

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All Diodes datasheetsAll Nexperia datasheets (54)

Data on this page is extracted from publicly available manufacturer datasheets using automated tools including AI. It may contain errors or omissions. Always verify specifications against the official manufacturer datasheet before making design or purchasing decisions. See our Terms of Service. Rights holders can submit a takedown request.

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