BAV199
Switching DiodeThe BAV199 is a switching diode from Nexperia. View the full BAV199 datasheet below including key specifications, electrical characteristics, absolute maximum ratings.
Official BAV199 datasheet (PDF) — the source this page was extracted from.
BAV199 Key Specifications
| Parameter | Value |
|---|---|
| Reverse breakdown voltage V(BR) | 70 V min (I_R = 100 μA) |
| Reverse leakage current I_R | 5 nA max (V_R = 70 V) |
| Forward voltage V_F | 900 mV max at 1 mA, 1000 mV max at 10 mA, 1100 mV max at 50 mA, 1250 mV max at 150 mA |
| Diode capacitance C_D | 2 pF max (V_R = 0 V, f = 1 MHz) |
| Reverse recovery time t_rr | 3 μs max (I_F = I_R = 10 mA) |
BAV199 Overview
Part: BAV199 — HUA XUAN YANG ELECTRONICS
Type: High-Voltage Switching Diode (Small-Signal)
Description: 70 V reverse-voltage switching diode in SOT-23 with 215 mA average rectified output current and 200 mW power dissipation.
Operating Conditions:
- Operating temperature: Storage range −55 to +150 °C
- Junction temperature: up to 150 °C
Absolute Maximum Ratings:
- Max reverse voltage (non-repetitive peak / DC blocking): 70 V
- Max forward continuous current: 500 mA
- Max average rectified output current: 215 mA
- Non-repetitive peak forward surge current (t = 8.3 ms): 1.0 A
- Max power dissipation: 200 mW
- Max junction temperature: 150 °C
- Storage temperature range: −55 to +150 °C
Key Specs:
- Reverse breakdown voltage V(BR): 70 V min (I_R = 100 μA)
- Reverse leakage current I_R: 5 nA max (V_R = 70 V)
- Forward voltage V_F: 900 mV max at 1 mA, 1000 mV max at 10 mA, 1100 mV max at 50 mA, 1250 mV max at 150 mA
- Diode capacitance C_D: 2 pF max (V_R = 0 V, f = 1 MHz)
- Reverse recovery time t_rr: 3 μs max (I_F = I_R = 10 mA)
Features:
- Average rectified output current of 215 mA
- Power dissipation of 200 mW
Applications:
- General-purpose switching
Package:
- SOT-23 (3-pin), 3000 pcs per reel, marking "JY"
BAV199 Features
- z IO=215mA Average Rectified Output Current:
- z Power Dissipation of 200mw
BAV199 Electrical Characteristics
| Parameter | Symbol | Test conditions | Min | Max | Unit |
|---|---|---|---|---|---|
| Reverse breakdown voltage | V (BR) | I R = 100μA | 70 | V | |
| Reverse voltage leakage current | I R | R = V 70V | 5 | nA | |
| Forward voltage | V F | I F =1mA I F =10mA I F =50mA I F =150mA | 900 1000 1100 1250 | mV | |
| Diode capacitance | C D | R V =0, f=1MHz | 2 | pF | |
| Reverse recovery time | t r r | I F = I R =10mA | 3 | μs |
SOT-23
BAV199 Absolute Maximum Ratings
| Parameter | Symbol | Limit | Unit |
|---|---|---|---|
| Non-Repetitive Peak Reverse Voltage | V RM | 70 | V |
| DC Blocking Voltage | V R | 70 | V |
| Forward Continuous Current | I FM | 500 | mA |
| Average Rectified Output Current | I O | 215 | mA |
| Non-Repetitive Peak Forward Surge Current @t=8.3ms | I FSM | 1.0 | A |
| Power Dissipation | P D | 200 | mW |
| Junction Temperature | T J | 150 | °C |
| Storage Temperature Range | T STG | -55~+150 | °C |
BAV199 Package Information
Other Diodes
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- CH213K – WCH, Low Dropout Ideal Diode Chip
- ESD5Z2.5T1G – onsemi, ESD Protection TVS Diode
- PMEG4010CEJ – Nexperia, Schottky Barrier Rectifier
- USBLC6-2SC6 – STMicroelectronics, ESD Protection Device
Ask your AI agent about the BAV199
Connect SheetsData to Claude, Cursor, Codex or any MCP client and your agent reads this datasheet for you: pinout, limits, register maps and design checks, with the numbers taken from the PDF.
claude mcp add --transport http sheetsdata https://mcp.sheetsdata.com/mcp
Then ask: "Can the BAV199 run from my 12 V rail? Check it against the datasheet limits."
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