1N5819W
Schottky Barrier RectifierThe 1N5819W is a schottky barrier rectifier from Rectron Inc. View the full 1N5819W datasheet below including key specifications, electrical characteristics, absolute maximum ratings.
Official 1N5819W datasheet (PDF) — the source this page was extracted from.
Manufacturer
Rectron IncCategory
Diodes1N5819W Key Specifications
| Parameter | Value |
|---|---|
| Maximum Repetitive Peak Reverse Voltage (V_RRM) | 20 V (1N5817W), 30 V (1N5818W), 40 V (1N5819W) |
| Maximum Average Forward Rectified Current (I_F(AV)) | 1 A (0.375" lead length at T_L = 90 °C) |
| Peak Forward Surge Current (I_FSM) | 25 A (8.3ms single half sine-wave at T_L = 70 °C) |
| Maximum Instantaneous Forward Voltage (V_F) | 0.45 V (at 1 A for 1N5817W), 0.6 V (at 1 A for 1N5819W) |
| Maximum Instantaneous Reverse Current (I_R) | 1 μA (at rated DC Reverse Voltage, T_A = 150 °C) |
| Typical Thermal Resistance (R_θJA) | 50 °C/W |
| Typical Junction Capacitance (C_j) | 110 pF |
| Storage and Operating Junction Temperature Range (T_j, T_stg) | -55 to +125 °C |
1N5819W Overview
Part: 1N5817W, 1N5818W, 1N5819W — Rectron Inc
Type: Schottky Barrier Rectifier
Description: 20–40 V, 1.0 Ampere Schottky barrier rectifier with metal silicon junction and guarding for overvoltage protection, offering low power loss and high efficiency.
Operating Conditions:
- Reverse voltage range: 20–40 V
- Operating temperature: -55 to +125 °C
- Max average forward rectified current: 1 A (at T_L = 90 °C)
Absolute Maximum Ratings:
- Max repetitive peak reverse voltage: 40 V
- Max average forward rectified current: 1 A
- Max junction/storage temperature: +125 °C
Key Specs:
- Maximum Repetitive Peak Reverse Voltage (V_RRM): 20 V (1N5817W), 30 V (1N5818W), 40 V (1N5819W)
- Maximum Average Forward Rectified Current (I_F(AV)): 1 A (0.375" lead length at T_L = 90 °C)
- Peak Forward Surge Current (I_FSM): 25 A (8.3ms single half sine-wave at T_L = 70 °C)
- Maximum Instantaneous Forward Voltage (V_F): 0.45 V (at 1 A for 1N5817W), 0.6 V (at 1 A for 1N5819W)
- Maximum Instantaneous Reverse Current (I_R): 1 μA (at rated DC Reverse Voltage, T_A = 150 °C)
- Typical Thermal Resistance (R_θJA): 50 °C/W
- Typical Junction Capacitance (C_j): 110 pF
- Storage and Operating Junction Temperature Range (T_j, T_stg): -55 to +125 °C
Features:
- Metal silicon junction, majority carrier conduction
- Guarding for overvoltage protection
- High current capability
- Low power loss, high efficiency
- High surge capability
Applications:
- Low voltage, high frequency inverters
- Free wheeling
- Polarity protection
Package:
- SOD-123F
- SOD-123FL
1N5819W Features
- Metal silicon junction, majority carrier conduction
- Guarding for overvoltage protection
- High current capability
- Low power loss, high efficiency
- High surge capability
- For use in low voltage, high frequency inverters,free wheeling, and polarity protection applications
1N5819W Electrical Characteristics
Ratings at ambient temperature unless otherwise specified. 25 q C
| Parameter | Symbols | 1N5817W | 1N5818W | 1N5819W | Units |
|---|---|---|---|---|---|
| Maximum Repetitive Peak Reverse Voltage | V RRM | 20 | 30 | 40 | V |
| Maximum RMS voltage | V RMS | 14 | 21 | 28 | V |
| Maximum DC Blocking Voltage | V DC | 20 | 30 | 40 | V |
| Maximum Average Forward Rectified Current 0.375" (9.5 mm) Lead Length at T L = 90 q C | I F(AV) | 1 | 1 | 1 | A |
| Peak Forward Surge Current, 8.3ms Single Half Sine-wave Superimposed On Rated Load (JEDEC method) at TL = 70 q C | I FSM | 25 | 25 | 25 | A |
| Typical Current Squared Time | I 2 T | 2.59 | 2.59 | 2.59 | A 2 S |
| Maximum Instantaneous Forward Voltage at 1 A Maximum Instantaneous Forward Voltage at 3.1 A | V F | 0.45 0.75 | 0.55 0.875 | 0.6 0.9 | V |
| Maximum Instantaneous Reverse Current at Rated DC Reverse Voltage TA = 150 q C TA = 25 q C | I R | 1 20 | 1 20 | 1 20 | S A |
| Typical Thermal Resistance | R ˥ JA R ˥ JL | 50 15 | 50 15 | 50 15 | ¶ C/W |
| Typical Junction Capacitance | C j | 110 | 110 | 110 | pF |
| Storage and Operating Junction Temperature Range | T , T j stg | -55 ~ +125 | -55 ~ +125 | -55 ~ +125 | ¶ C |
1N5819W Absolute Maximum Ratings
Ratings at ambient temperature unless otherwise specified. 25 q C
| Parameter | Symbols | 1N5817W | 1N5818W | 1N5819W | Units |
|---|---|---|---|---|---|
| Maximum Repetitive Peak Reverse Voltage | V RRM | 20 | 30 | 40 | V |
| Maximum RMS voltage | V RMS | 14 | 21 | 28 | V |
| Maximum DC Blocking Voltage | V DC | 20 | 30 | 40 | V |
| Maximum Average Forward Rectified Current 0.375" (9.5 mm) Lead Length at T L = 90 q C | I F(AV) | 1 | 1 | 1 | A |
| Peak Forward Surge Current, 8.3ms Single Half Sine-wave Superimposed On Rated Load (JEDEC method) at TL = 70 q C | I FSM | 25 | 25 | 25 | A |
| Typical Current Squared Time | I 2 T | 2.59 | 2.59 | 2.59 | A 2 S |
| Maximum Instantaneous Forward Voltage at 1 A Maximum Instantaneous Forward Voltage at 3.1 A | V F | 0.45 0.75 | 0.55 0.875 | 0.6 0.9 | V |
| Maximum Instantaneous Reverse Current at Rated DC Reverse Voltage TA = 150 q C TA = 25 q C | I R | 1 20 | 1 20 | 1 20 | S A |
| Typical Thermal Resistance | R ˥ JA R ˥ JL | 50 15 | 50 15 | 50 15 | ¶ C/W |
| Typical Junction Capacitance | C j | 110 | 110 | 110 | pF |
| Storage and Operating Junction Temperature Range | T , T j stg | -55 ~ +125 | -55 ~ +125 | -55 ~ +125 | ¶ C |
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