1N5817W
Schottky Barrier RectifierThe 1N5817W is a schottky barrier rectifier from Rectron Inc. View the full 1N5817W datasheet below including key specifications, electrical characteristics, absolute maximum ratings.
1N5817W shares its datasheet with 1N5819W, whose page lists every part number it covers.
Official 1N5817W datasheet (PDF) — the source this page was extracted from.
Manufacturer
Rectron IncCategory
Diodes1N5817W Key Specifications
| Parameter | Value |
|---|---|
| Maximum Repetitive Peak Reverse Voltage (V_RRM) | 20 V (1N5817W), 30 V (1N5818W), 40 V (1N5819W) |
| Maximum Average Forward Rectified Current (I_F(AV)) | 1 A (0.375" lead length at T_L = 90 °C) |
| Peak Forward Surge Current (I_FSM) | 25 A (8.3ms single half sine-wave at T_L = 70 °C) |
| Maximum Instantaneous Forward Voltage (V_F) | 0.45 V (at 1 A for 1N5817W), 0.6 V (at 1 A for 1N5819W) |
| Maximum Instantaneous Reverse Current (I_R) | 1 μA (at rated DC Reverse Voltage, T_A = 150 °C) |
| Typical Thermal Resistance (R_θJA) | 50 °C/W |
| Typical Junction Capacitance (C_j) | 110 pF |
| Storage and Operating Junction Temperature Range (T_j, T_stg) | -55 to +125 °C |
1N5817W Overview
Part: 1N5817W, 1N5818W, 1N5819W — Rectron Inc
Type: Schottky Barrier Rectifier
Description: 20–40 V, 1.0 Ampere Schottky barrier rectifier with metal silicon junction and guarding for overvoltage protection, offering low power loss and high efficiency.
Operating Conditions:
- Reverse voltage range: 20–40 V
- Operating temperature: -55 to +125 °C
- Max average forward rectified current: 1 A (at T_L = 90 °C)
Absolute Maximum Ratings:
- Max repetitive peak reverse voltage: 40 V
- Max average forward rectified current: 1 A
- Max junction/storage temperature: +125 °C
Key Specs:
- Maximum Repetitive Peak Reverse Voltage (V_RRM): 20 V (1N5817W), 30 V (1N5818W), 40 V (1N5819W)
- Maximum Average Forward Rectified Current (I_F(AV)): 1 A (0.375" lead length at T_L = 90 °C)
- Peak Forward Surge Current (I_FSM): 25 A (8.3ms single half sine-wave at T_L = 70 °C)
- Maximum Instantaneous Forward Voltage (V_F): 0.45 V (at 1 A for 1N5817W), 0.6 V (at 1 A for 1N5819W)
- Maximum Instantaneous Reverse Current (I_R): 1 μA (at rated DC Reverse Voltage, T_A = 150 °C)
- Typical Thermal Resistance (R_θJA): 50 °C/W
- Typical Junction Capacitance (C_j): 110 pF
- Storage and Operating Junction Temperature Range (T_j, T_stg): -55 to +125 °C
Features:
- Metal silicon junction, majority carrier conduction
- Guarding for overvoltage protection
- High current capability
- Low power loss, high efficiency
- High surge capability
Applications:
- Low voltage, high frequency inverters
- Free wheeling
- Polarity protection
Package:
- SOD-123F
- SOD-123FL
1N5817W Features
- Metal silicon junction, majority carrier conduction
- Guarding for overvoltage protection
- High current capability
- Low power loss, high efficiency
- High surge capability
- For use in low voltage, high frequency inverters,free wheeling, and polarity protection applications
1N5817W Electrical Characteristics
Ratings at ambient temperature unless otherwise specified. 25 q C
| Parameter | Symbols | 1N5817W | 1N5818W | 1N5819W | Units |
|---|---|---|---|---|---|
| Maximum Repetitive Peak Reverse Voltage | V RRM | 20 | 30 | 40 | V |
| Maximum RMS voltage | V RMS | 14 | 21 | 28 | V |
| Maximum DC Blocking Voltage | V DC | 20 | 30 | 40 | V |
| Maximum Average Forward Rectified Current 0.375" (9.5 mm) Lead Length at T L = 90 q C | I F(AV) | 1 | 1 | 1 | A |
| Peak Forward Surge Current, 8.3ms Single Half Sine-wave Superimposed On Rated Load (JEDEC method) at TL = 70 q C | I FSM | 25 | 25 | 25 | A |
| Typical Current Squared Time | I 2 T | 2.59 | 2.59 | 2.59 | A 2 S |
| Maximum Instantaneous Forward Voltage at 1 A Maximum Instantaneous Forward Voltage at 3.1 A | V F | 0.45 0.75 | 0.55 0.875 | 0.6 0.9 | V |
| Maximum Instantaneous Reverse Current at Rated DC Reverse Voltage TA = 150 q C TA = 25 q C | I R | 1 20 | 1 20 | 1 20 | S A |
| Typical Thermal Resistance | R ˥ JA R ˥ JL | 50 15 | 50 15 | 50 15 | ¶ C/W |
| Typical Junction Capacitance | C j | 110 | 110 | 110 | pF |
| Storage and Operating Junction Temperature Range | T , T j stg | -55 ~ +125 | -55 ~ +125 | -55 ~ +125 | ¶ C |
1N5817W Absolute Maximum Ratings
Ratings at ambient temperature unless otherwise specified. 25 q C
| Parameter | Symbols | 1N5817W | 1N5818W | 1N5819W | Units |
|---|---|---|---|---|---|
| Maximum Repetitive Peak Reverse Voltage | V RRM | 20 | 30 | 40 | V |
| Maximum RMS voltage | V RMS | 14 | 21 | 28 | V |
| Maximum DC Blocking Voltage | V DC | 20 | 30 | 40 | V |
| Maximum Average Forward Rectified Current 0.375" (9.5 mm) Lead Length at T L = 90 q C | I F(AV) | 1 | 1 | 1 | A |
| Peak Forward Surge Current, 8.3ms Single Half Sine-wave Superimposed On Rated Load (JEDEC method) at TL = 70 q C | I FSM | 25 | 25 | 25 | A |
| Typical Current Squared Time | I 2 T | 2.59 | 2.59 | 2.59 | A 2 S |
| Maximum Instantaneous Forward Voltage at 1 A Maximum Instantaneous Forward Voltage at 3.1 A | V F | 0.45 0.75 | 0.55 0.875 | 0.6 0.9 | V |
| Maximum Instantaneous Reverse Current at Rated DC Reverse Voltage TA = 150 q C TA = 25 q C | I R | 1 20 | 1 20 | 1 20 | S A |
| Typical Thermal Resistance | R ˥ JA R ˥ JL | 50 15 | 50 15 | 50 15 | ¶ C/W |
| Typical Junction Capacitance | C j | 110 | 110 | 110 | pF |
| Storage and Operating Junction Temperature Range | T , T j stg | -55 ~ +125 | -55 ~ +125 | -55 ~ +125 | ¶ C |
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- ESD5Z2.5T1G – onsemi, ESD Protection TVS Diode
- PMEG4010CEJ – Nexperia, Schottky Barrier Rectifier
- BAT54S – Diotec Semiconductor, Dual Schottky Barrier Diode (Series)
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