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TM4C123GH6PGEI7

ARM Cortex-M4F MCU

The TM4C123GH6PGEI7 is a arm cortex-m4f mcu from Texas Instruments. View the full TM4C123GH6PGEI7 datasheet below including key specifications, electrical characteristics, absolute maximum ratings.

TM4C123GH6PGEI7 shares its datasheet with TM4C123GH6PM, whose page lists every part number it covers.

Official TM4C123GH6PGEI7 datasheet (PDF) — the source this page was extracted from.

Manufacturer

Texas Instruments

Package

144-LQFP

TM4C123GH6PGEI7 Key Specifications

ParameterValue
ConnectivityCANbus, I2C, IrDA, Microwire, QEI, SPI, SSI, UART/USART, USB OTG
Core ProcessorARM® Cortex®-M4F
Core Size32-Bit
Data ConvertersA/D 24x12b
DigiKey ProgrammableNot Verified
EEPROM Size2K x 8
Mounting TypeSurface Mount
Number of I/O105
Operating Temperature-40°C ~ 85°C (TA)
Oscillator TypeInternal
Package / Case144-LQFP
PeripheralsBrown-out Detect/Reset, DMA, Motion PWM, POR, WDT
Flash Memory Size256KB (256K x 8)
Program Memory TypeFLASH
RAM Size32K x 8 B
Clock Speed80MHz
Standard Pack Qty60
Supplier Device Package144-LQFP (20x20)
Supply Voltage1.08V ~ 3.63V

TM4C123GH6PGEI7 Overview

Part: Tiva TM4C123GH6PM — Texas Instruments

Type: ARM Cortex-M4F Microcontroller

Description: 32-bit ARM Cortex-M4F MCU with FPU, operating from a 3.15–3.63 V supply, with integrated serial communications, motion control, analog peripherals and a Hibernation module.

Operating Conditions:

  • Supply voltage (VDD): 3.15–3.63 V (3.3 V nominal)
  • Analog supply voltage (VDDA): 2.97–3.63 V (3.3 V nominal)
  • Core supply voltage (VDDC): 1.08–1.32 V (1.2 V nominal, with LDO in operation)
  • GPIO input high-level voltage: 0.65 × VDD to 5.5 V

Absolute Maximum Ratings:

  • Max VDD, VDDA and VBAT supply voltage: 4 V
  • Max VBAT ramp rate: 0.7 V/μs
  • GPIO input voltage: -0.3 to 5.5 V (PD4, PD5, PB0 and PB1 as GPIO: -0.3 to VDD + 0.3 V)
  • Max current per output pin: 25 mA
  • Max junction temperature: 150 °C
  • Storage temperature (unpowered): -65 to 150 °C
  • ESD: 2.0 kV HBM, 500 V CDM

Key Specs:

  • VDD supply: 3.15 / 3.3 / 3.63 V (min/nom/max)
  • VDDA supply: 2.97 / 3.3 / 3.63 V (min/nom/max)
  • VDDC supply: 1.08 / 1.2 / 1.32 V (min/nom/max); same range in Deep-sleep mode
  • GPIO VIH min 0.65 × VDD, VIL max 0.35 × VDD, hysteresis min 0.2 V
  • GPIO VOH min 2.4 V; VOL max 0.4 V
  • GPIO drive: 2, 4 or 8 mA at VOH = 2.4 V / VOL = 0.4 V; 8-mA drive sinks 18 mA at VOL = 1.2 V
  • Cumulative GPIO current per package side: 30 mA (left), 35 mA (bottom), 40 mA (right), 40 mA (top); based on design simulation, not production tested

Features:

  • ARM Cortex-M4F processor core with floating-point unit (FPU) and memory protection unit (MPU)
  • On-chip SRAM, ROM, Flash and EEPROM
  • Serial communications peripherals
  • Hibernation module with real-time clock and battery-backed memory
  • Micro DMA (μDMA) controller
  • Advanced motion control and analog peripherals
  • JTAG and ARM Serial Wire Debug

Applications:

Package:

TM4C123GH6PGEI7 Features

The TM4C123GH6PM microcontroller component features and general function are discussed in more detail in the following section.

TM4C123GH6PGEI7 Pin Configuration

When using the Device controller portion of the USB controller in a system that also provides Host functionality, the power to VBUS must be disabled to allow the external Host controller to supply power. Usually, the USB0EPEN signal is used to control the external regulator and should be negated to avoid having two devices driving the USB0VBUS power pin on the USB connector.

When the USB controller is acting as a Host, it is in control of two signals that are attached to an external voltage supply that provides power to VBUS. The Host controller uses the USB0EPEN signal to enable or disable power to the USB0VBUS pin on the USB connector. An input pin, USB0PFLT , provides feedback when there has been a power fault on VBUS. The USB0PFLT signal can be configured to either automatically negate the USB0EPEN signal to disable power, and/or it can generate an interrupt to the interrupt controller to allow software to handle the power fault condition. The polarity and actions related to both USB0EPEN and USB0PFLT are fully configurable in the USB controller. The controller also provides interrupts on Device insertion and removal to allow the Host controller code to respond to these external events.

TM4C123GH6PGEI7 Electrical Characteristics

ParameterParameter NameMinNomMaxUnit
POWER SUPPLY REQUIREMENTSPOWER SUPPLY REQUIREMENTSPOWER SUPPLY REQUIREMENTSPOWER SUPPLY REQUIREMENTSPOWER SUPPLY REQUIREMENTSPOWER SUPPLY REQUIREMENTS
V DDAADC supply voltage2.973.33.63V
GNDAADC ground voltage-0-V
VDDA / GNDA VOLTAGE REFERENCEVDDA / GNDA VOLTAGE REFERENCEVDDA / GNDA VOLTAGE REFERENCEVDDA / GNDA VOLTAGE REFERENCEVDDA / GNDA VOLTAGE REFERENCEVDDA / GNDA VOLTAGE REFERENCE
C REFVoltage reference decoupling capacitance-1.0 // 0.01 c-μF
ANALOG INPUTANALOG INPUTANALOG INPUTANALOG INPUTANALOG INPUTANALOG INPUT
V ADCINSingle-ended, full- scale analog input voltage, internal reference de0-V DDAV
Differential, full-scale analog input voltage, internal reference df-V DDA-V DDAV
VIN CMInput commonmodevoltage, differentialmode g--(VREFP + VREFN) / 2 ± 25mV
I LADC input leakage current h--2.0μA
R ADCADC equivalent input resistance h--2.5kΩ
C ADCADC equivalent input capacitance h--10pF
R SAnalog source resistance h--500Ω
SAMPLING DYNAMICSSAMPLING DYNAMICSSAMPLING DYNAMICSSAMPLING DYNAMICSSAMPLING DYNAMICSSAMPLING DYNAMICS
F ADCADC conversion clock frequency i-16-MHz
F CONVADC conversion rate1Msps
T SADC sample time-250-ns
T CADC conversion time j1μs
T LTLatency from trigger to start of conversion-2-ADC clocks
SYSTEM PERFORMANCE when using internal referenceSYSTEM PERFORMANCE when using internal referenceSYSTEM PERFORMANCE when using internal referenceSYSTEM PERFORMANCE when using internal referenceSYSTEM PERFORMANCE when using internal referenceSYSTEM PERFORMANCE when using internal reference
NResolution12bits
INLIntegral nonlinearity error, over full input range-±1.5±3.0LSB
DNLDifferential nonlinearity error, over full input range-±0.8+2.0/-1.0 kLSB
E OOffset error-±5.0±15.0LSB
E GGain error l-±10.0±30.0LSB
E TTotal unadjusted error, over full input range m-±10.0±30.0LSB
DYNAMIC CHARACTERISTICS noDYNAMIC CHARACTERISTICS noDYNAMIC CHARACTERISTICS noDYNAMIC CHARACTERISTICS noDYNAMIC CHARACTERISTICS noDYNAMIC CHARACTERISTICS no
SNR DSignal-to-noise-ratio, Differential input,V ADCIN : -20dB FS, 1KHz p7072-dB
SDR DSignal-to-distortion ratio, Differential input, V ADCIN : -3dB FS, 1KHz pqr7275-dB
SNDR DSignal-to-Noise+Distortion ratio, Differential input, V ADCIN : -3dB FS, 1KHz pst6870-dB
SNR SSignal-to-noise-ratio, Single-ended input, V ADCIN : -20dB FS, 1KHz u6065-dB

TM4C123GH6PGEI7 Absolute Maximum Ratings

The maximum ratings are the limits to which the device can be subjected without permanently damaging the device. Device reliability may be adversely affected by exposure to absolute-maximum ratings for extended periods.

Note: The device is not guaranteed to operate properly at the maximum ratings.

Table 24-1. Absolute Maximum Ratings

ParameterParameter Name aValue - MinValue - MaxUnit
V DDV DD supply voltage04V
V DDAV DDA supply voltage b04V
V BATV BAT battery supply voltage04V
V BATRMPV BAT battery supply voltage ramp time00.7V/μs
V IN_GPIOInput voltage on GPIOs, regardless of whether the microcontroller is powered cde-0.35.5V
V IN_GPIOInput voltage for PD4 , PD5 , PB0 and PB1 when configured as GPIO-0.3V DD + 0.3V
I GPIOMAXMaximum current per output pin-25mA
T SUnpowered storage temperature range-65150°C
T JMAXMaximum junction temperature-150°C

Important: This device contains circuitry to protect the I/Os against damage due to high-static voltages; however, it is advised that normal precautions be taken to avoid application of any voltage higher than maximum-rated voltages to this high-impedance circuit. Reliability of operation is enhanced if unused inputs are connected to an appropriate logic voltage level (see 'Connections for Unused Signals' on page 1356).

Table 24-2. ESD Absolute Maximum Ratings

ParameterMinNomMaxUnit
Component-Level ESD aV ESDHBM b--2.0kV
Stress VoltageV ESDCDM c--500V

For special high-current applications, the GPIO output buffers may be used with the following restrictions. With the GPIO pins configured as 8-mA output drivers, a total of four GPIO outputs may be used to sink current loads up to 18 mA each. At 18-mA sink current loading, the V OL value is specified as 1.2 V. The high-current GPIO package pins must be selected such that there are only a maximum of two per side of the physical package with the total number of high-current GPIO outputs not exceeding four for the entire package.

Table 24-5. Recommended DC Operating Conditions

ParameterParameter NameMinNomMaxUnit
V DDV DD supply voltage3.153.33.63V
V DDAV DDA supply voltage2.973.33.63V
V DDCV DDC supply voltage1.081.21.32V
V DDCDS abV DDC supply voltage, Deep-sleepmode1.08-1.32V

a. These values are valid when LDO is in operation.

b. There are peripheral timing restrictions for SSI and LPC in Deep-sleep mode. Please refer to those peripheral characteristic sections for more information.

Table 24-6. Recommended GPIO Pad Operating Conditions

ParameterParameter NameMinNomMaxUnit
V IHGPIO high-level input voltage0.65 * V DD-5.5V
V ILGPIO low-level input voltage0-0.35 * V DDV
V HYSGPIO input hysteresis0.2--V
V OHGPIO high-level output voltage2.4--V
V OLGPIO low-level output voltage--0.4V
I OHHigh-level source current, V OH =2.4 V aHigh-level source current, V OH =2.4 V aHigh-level source current, V OH =2.4 V aHigh-level source current, V OH =2.4 V aHigh-level source current, V OH =2.4 V a
I OH2-mA Drive2.0--mA
I OH4-mA Drive4.0--mA
I OH8-mA Drive8.0--mA
I OLLow-level sink current, V OL =0.4 V aLow-level sink current, V OL =0.4 V aLow-level sink current, V OL =0.4 V aLow-level sink current, V OL =0.4 V aLow-level sink current, V OL =0.4 V a
I OL2-mA Drive2.0--mA
I OL4-mA Drive4.0--mA
I OL8-mA Drive8.0--mA
I OL8-mA Drive, V OL =1.2 V18.0--mA

a. I O specifications reflect the maximum current where the corresponding output voltage meets the V OH /V OL thresholds. I O current can exceed these limits (subject to absolute maximum ratings).

Table 24-7. GPIO Current Restrictions a

ParameterParameter NameMinNomMaxUnit
I MAXLCumulative maximum GPIO current per side, left b--30mA
I MAXBCumulative maximumGPIOcurrent per side, bottom b--35mA
I MAXRCumulative maximum GPIO current per side, right b--40mA
I MAXTCumulative maximum GPIO current per side, top b--40mA

a. Based on design simulations, not tested in production.

b. Sum of sink and source current for GPIOs as shown in Table 24-8 on page 1361.

Table 24-8. GPIO Package Side Assignments

SideGPIOs
LeftPB[6-7], PC[4-7], PD7, PE[0-3], PF4
BottomPA[0-7], PF[0-3]
RightPB[0-3], PD[4-5]
TopPB[4-5], PC[0-3], PD[0-3,6], PE[4-5]

TM4C123GH6PGEI7 Thermal Information

CharacteristicSymbolValueUnit
Thermal resistance (junction to ambient) bΘ JA54.8°C/W
Thermal resistance (junction to board) bΘ JB27.5°C/W
Thermal resistance (junction to case) bΘ JC15.8°C/W
Thermal metric (junction to top of package)Ψ JT0.7°C/W
Thermal metric (junction to board)Ψ JB27.1°C/W
Junction temperature formulaT JT C + (P • Ψ JT ) T PCB + (P • Ψ JB ) c T A + (P • Θ JA ) d T B + (P • Θ JB ) ef°C

a. For more details about thermal metrics and definitions, see the Semiconductor and IC Package Thermal Metrics Application Report (literature number SPRA953).

b. Junction to ambient thermal resistance (Θ JA ), junction to board thermal resistance (Θ JB ), and junction to case thermal resistance (Θ JC ) numbers are determined by a package simulator.

  • c. T PCB is the temperature of the board acquired by following the steps listed in the EAI/JESD 51-8 standard summarized in the Semiconductor and IC Package Thermal Metrics Application Report (literature number SPRA953).
  • d. Because Θ JA is highly variable and based on factors such as board design, chip/pad size, altitude, and external ambient temperature, it is recommended that equations containing Ψ JT and Ψ JB be used for best results.

e. T B is temperature of the board.

f. Θ JB is not a pure reflection of the internal resistance of the package because it includes the resistance of the testing board and environment. It is recommended that equations containing Ψ JT and Ψ JB be used for best results.

TM4C123GH6PGEI7 Package Information

MTQF008A - JANUARY 1995 - REVISED DECEMBER 1996

NOTES: A. All linear dimensions are in millimeters.

  • B. This drawing is subject to change without notice.
  • C. Falls within JEDEC MS-026
  • D. May also be thermally enhanced plastic with leads connected to the die pads.

Variants on the same datasheet

These parts have exact links to the same datasheet. They are candidates to compare, not verified drop-in replacements; check package, pinout and electrical limits.

Part NumberManufacturerPackage
TM4C123Texas InstrumentsLQFP-64
TM4C123GH6PMTexas InstrumentsLQFP-64
TM4C123GH6PMITexas Instruments64-LQFP
TM4C123GH6PMI7Texas Instruments64-LQFP
TM4C123GH6PMI7RTexas Instruments64-LQFP
TM4C123GH6PMIRTexas Instruments64-LQFP
TM4C123GH6PMTTexas Instruments64-LQFP
TM4C123GH6PMT7Texas Instruments64-LQFP
TM4C123GH6PMT7RTexas Instruments64-LQFP
TM4C123GH6PMTRTexas Instruments64-LQFP

Other Microcontrollers (MCU)

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