TM4C123GH6PMT
ARM Cortex-M4F MCUThe TM4C123GH6PMT is a arm cortex-m4f mcu from Texas Instruments. View the full TM4C123GH6PMT datasheet below including key specifications, electrical characteristics, absolute maximum ratings.
Manufacturer
Texas Instruments
Category
ARM Cortex-M4F MCU
Package
64-LQFP
Key Specifications
| Parameter | Value |
|---|---|
| Connectivity | CANbus, I2C, IrDA, Microwire, QEI, SPI, SSI, UART/USART, USB OTG |
| Core Processor | ARM® Cortex®-M4F |
| Core Size | 32-Bit |
| Data Converters | A/D 12x12b |
| DigiKey Programmable | Not Verified |
| EEPROM Size | 2K x 8 |
| Mounting Type | Surface Mount |
| Number of I/O | 43 |
| Operating Temperature | -40°C ~ 105°C (TA) |
| Oscillator Type | Internal |
| Package / Case | 64-LQFP |
| Packaging | Tray |
| Peripherals | Brown-out Detect/Reset, DMA, Motion PWM, POR, WDT |
| Flash Memory Size | 256KB (256K x 8) |
| Program Memory Type | FLASH |
| RAM Size | 32K x 8 B |
| Clock Speed | 80MHz |
| Standard Pack Qty | 160 |
| Supplier Device Package | 64-LQFP (10x10) |
| Supply Voltage | 1.08V ~ 3.63V |
Overview
Part: Tiva™ TM4C123GH6PM Microcontroller — Texas Instruments
Type: ARM Cortex-M4F MCU
Description: 32-bit ARM Cortex-M4F MCU with 80 MHz operation, 256 KB Flash, 32 KB SRAM, 2 KB EEPROM, and extensive peripheral integration including serial communications, advanced motion control, and analog capabilities.
Operating Conditions:
- Operating temperature: -40 to 105 °C
- Max clock: 80 MHz
Absolute Maximum Ratings:
Key Specs:
Features:
- ARM Cortex-M4F processor core with FPU
- 80 MHz operation
- 256 KB Flash memory
- 32 KB SRAM
- 2 KB EEPROM
- 8x UART modules
- 4x SPI modules
- 4x I2C modules
- 2x CAN modules
- USB 2.0 OTG/Host/Device
- 6x 16-bit General-Purpose Timers
- 6x 32-bit General-Purpose Timers
- 2x Watchdog Timers
- 12-bit ADC (up to 2 MSPS)
- 2x Analog Comparators
- 16x PWM outputs
- JTAG and ARM Serial Wire Debug
Package:
- 100-pin LQFP
Features
The TM4C123GH6PM microcontroller component features and general function are discussed in more detail in the following section.
Pin Configuration
When using the Device controller portion of the USB controller in a system that also provides Host functionality, the power to VBUS must be disabled to allow the external Host controller to supply power. Usually, the USB0EPEN signal is used to control the external regulator and should be negated to avoid having two devices driving the USB0VBUS power pin on the USB connector.
When the USB controller is acting as a Host, it is in control of two signals that are attached to an external voltage supply that provides power to VBUS. The Host controller uses the USB0EPEN signal to enable or disable power to the USB0VBUS pin on the USB connector. An input pin, USB0PFLT , provides feedback when there has been a power fault on VBUS. The USB0PFLT signal can be configured to either automatically negate the USB0EPEN signal to disable power, and/or it can generate an interrupt to the interrupt controller to allow software to handle the power fault condition. The polarity and actions related to both USB0EPEN and USB0PFLT are fully configurable in the USB controller. The controller also provides interrupts on Device insertion and removal to allow the Host controller code to respond to these external events.
Electrical Characteristics
| Parameter | Parameter Name | Min | Nom | Max | Unit |
|---|---|---|---|---|---|
| POWER SUPPLY REQUIREMENTS | POWER SUPPLY REQUIREMENTS | POWER SUPPLY REQUIREMENTS | POWER SUPPLY REQUIREMENTS | POWER SUPPLY REQUIREMENTS | POWER SUPPLY REQUIREMENTS |
| V DDA | ADC supply voltage | 2.97 | 3.3 | 3.63 | V |
| GNDA | ADC ground voltage | - | 0 | - | V |
| VDDA / GNDA VOLTAGE REFERENCE | VDDA / GNDA VOLTAGE REFERENCE | VDDA / GNDA VOLTAGE REFERENCE | VDDA / GNDA VOLTAGE REFERENCE | VDDA / GNDA VOLTAGE REFERENCE | VDDA / GNDA VOLTAGE REFERENCE |
| C REF | Voltage reference decoupling capacitance | - | 1.0 // 0.01 c | - | μF |
| ANALOG INPUT | ANALOG INPUT | ANALOG INPUT | ANALOG INPUT | ANALOG INPUT | ANALOG INPUT |
| V ADCIN | Single-ended, full- scale analog input voltage, internal reference de | 0 | - | V DDA | V |
| Differential, full-scale analog input voltage, internal reference df | -V DDA | - | V DDA | V | |
| VIN CM | Input commonmodevoltage, differentialmode g | - | - | (VREFP + VREFN) / 2 ± 25 | mV |
| I L | ADC input leakage current h | - | - | 2.0 | μA |
| R ADC | ADC equivalent input resistance h | - | - | 2.5 | kΩ |
| C ADC | ADC equivalent input capacitance h | - | - | 10 | pF |
| R S | Analog source resistance h | - | - | 500 | Ω |
| SAMPLING DYNAMICS | SAMPLING DYNAMICS | SAMPLING DYNAMICS | SAMPLING DYNAMICS | SAMPLING DYNAMICS | SAMPLING DYNAMICS |
| F ADC | ADC conversion clock frequency i | - | 16 | - | MHz |
| F CONV | ADC conversion rate | 1 | Msps | ||
| T S | ADC sample time | - | 250 | - | ns |
| T C | ADC conversion time j | 1 | μs | ||
| T LT | Latency from trigger to start of conversion | - | 2 | - | ADC clocks |
| SYSTEM PERFORMANCE when using internal reference | SYSTEM PERFORMANCE when using internal reference | SYSTEM PERFORMANCE when using internal reference | SYSTEM PERFORMANCE when using internal reference | SYSTEM PERFORMANCE when using internal reference | SYSTEM PERFORMANCE when using internal reference |
| N | Resolution | 12 | bits | ||
| INL | Integral nonlinearity error, over full input range | - | ±1.5 | ±3.0 | LSB |
| DNL | Differential nonlinearity error, over full input range | - | ±0.8 | +2.0/-1.0 k | LSB |
| E O | Offset error | - | ±5.0 | ±15.0 | LSB |
| E G | Gain error l | - | ±10.0 | ±30.0 | LSB |
| E T | Total unadjusted error, over full input range m | - | ±10.0 | ±30.0 | LSB |
| DYNAMIC CHARACTERISTICS no | DYNAMIC CHARACTERISTICS no | DYNAMIC CHARACTERISTICS no | DYNAMIC CHARACTERISTICS no | DYNAMIC CHARACTERISTICS no | DYNAMIC CHARACTERISTICS no |
| SNR D | Signal-to-noise-ratio, Differential input,V ADCIN : -20dB FS, 1KHz p | 70 | 72 | - | dB |
| SDR D | Signal-to-distortion ratio, Differential input, V ADCIN : -3dB FS, 1KHz pqr | 72 | 75 | - | dB |
| SNDR D | Signal-to-Noise+Distortion ratio, Differential input, V ADCIN : -3dB FS, 1KHz pst | 68 | 70 | - | dB |
| SNR S | Signal-to-noise-ratio, Single-ended input, V ADCIN : -20dB FS, 1KHz u | 60 | 65 | - | dB |
Absolute Maximum Ratings
The maximum ratings are the limits to which the device can be subjected without permanently damaging the device. Device reliability may be adversely affected by exposure to absolute-maximum ratings for extended periods.
Note: The device is not guaranteed to operate properly at the maximum ratings.
Table 24-1. Absolute Maximum Ratings
| Parameter | Parameter Name a | Value | Value | Unit |
|---|---|---|---|---|
| Parameter | Parameter Name a | Min | Max | Unit |
| V DD | V DD supply voltage | 0 | 4 | V |
| V DDA | V DDA supply voltage b | 0 | 4 | V |
| V BAT | V BAT battery supply voltage | 0 | 4 | V |
| V BATRMP | V BAT battery supply voltage ramp time | 0 | 0.7 | V/μs |
| V IN_GPIO | Input voltage on GPIOs, regardless of whether the microcontroller is powered cde | -0.3 | 5.5 | V |
| V IN_GPIO | Input voltage for PD4 , PD5 , PB0 and PB1 when configured as GPIO | -0.3 | V DD + 0.3 | V |
| I GPIOMAX | Maximum current per output pin | - | 25 | mA |
| T S | Unpowered storage temperature range | -65 | 150 | °C |
| T JMAX | Maximum junction temperature | - | 150 | °C |
Important: This device contains circuitry to protect the I/Os against damage due to high-static voltages; however, it is advised that normal precautions be taken to avoid application of any voltage higher than maximum-rated voltages to this high-impedance circuit. Reliability of operation is enhanced if unused inputs are connected to an appropriate logic voltage level (see 'Connections for Unused Signals' on page 1356).
Table 24-2. ESD Absolute Maximum Ratings
| Parameter | Min | Nom | Max | Unit | |
|---|---|---|---|---|---|
| Component-Level ESD a | V ESDHBM b | - | - | 2 | kV |
| Stress Voltage | V ESDCDM c | - | - | 500 | V |
Recommended Operating Conditions
For special high-current applications, the GPIO output buffers may be used with the following restrictions. With the GPIO pins configured as 8-mA output drivers, a total of four GPIO outputs may be used to sink current loads up to 18 mA each. At 18-mA sink current loading, the V OL value is specified as 1.2 V. The high-current GPIO package pins must be selected such that there are only a maximum of two per side of the physical package with the total number of high-current GPIO outputs not exceeding four for the entire package.
Table 24-5. Recommended DC Operating Conditions
| Parameter | Parameter Name | Min | Nom | Max | Unit |
|---|---|---|---|---|---|
| V DD | V DD supply voltage | 3.15 | 3.3 | 3.63 | V |
| V DDA | V DDA supply voltage | 2.97 | 3.3 | 3.63 | V |
| V DDC | V DDC supply voltage | 1.08 | 1.2 | 1.32 | V |
| V DDCDS ab | V DDC supply voltage, Deep-sleepmode | 1.08 | - | 1.32 | V |
a. These values are valid when LDO is in operation.
b. There are peripheral timing restrictions for SSI and LPC in Deep-sleep mode. Please refer to those peripheral characteristic sections for more information.
Table 24-6. Recommended GPIO Pad Operating Conditions
| Parameter | Parameter Name | Min | Nom | Max | Unit |
|---|---|---|---|---|---|
| V IH | GPIO high-level input voltage | 0.65 * V DD | - | 5.5 | V |
| V IL | GPIO low-level input voltage | 0 | - | 0.35 * V DD | V |
| V HYS | GPIO input hysteresis | 0.2 | - | - | V |
| V OH | GPIO high-level output voltage | 2.4 | - | - | V |
| V OL | GPIO low-level output voltage | - | - | 0.4 | V |
| I OH | High-level source current, V OH =2.4 V a | High-level source current, V OH =2.4 V a | High-level source current, V OH =2.4 V a | High-level source current, V OH =2.4 V a | High-level source current, V OH =2.4 V a |
| I OH | 2-mA Drive | 2.0 | - | - | mA |
| I OH | 4-mA Drive | 4.0 | - | - | mA |
| I OH | 8-mA Drive | 8.0 | - | - | mA |
| I OL | Low-level sink current, V OL =0.4 V a | Low-level sink current, V OL =0.4 V a | Low-level sink current, V OL =0.4 V a | Low-level sink current, V OL =0.4 V a | Low-level sink current, V OL =0.4 V a |
| I OL | 2-mA Drive | 2.0 | - | - | mA |
| I OL | 4-mA Drive | 4.0 | - | - | mA |
| I OL | 8-mA Drive | 8.0 | - | - | mA |
| I OL | 8-mA Drive, V OL =1.2 V | 18.0 | - | - | mA |
a. I O specifications reflect the maximum current where the corresponding output voltage meets the V OH /V OL thresholds. I O current can exceed these limits (subject to absolute maximum ratings).
Table 24-7. GPIO Current Restrictions a
| Parameter | Parameter Name | Min | Nom | Max | Unit |
|---|---|---|---|---|---|
| I MAXL | Cumulative maximum GPIO current per side, left b | - | - | 30 | mA |
| I MAXB | Cumulative maximumGPIOcurrent per side, bottom b | - | - | 35 | mA |
| I MAXR | Cumulative maximum GPIO current per side, right b | - | - | 40 | mA |
| I MAXT | Cumulative maximum GPIO current per side, top b | - | - | 40 | mA |
a. Based on design simulations, not tested in production.
b. Sum of sink and source current for GPIOs as shown in Table 24-8 on page 1361.
Table 24-8. GPIO Package Side Assignments
| Side | GPIOs |
|---|---|
| Left | PB[6-7], PC[4-7], PD7, PE[0-3], PF4 |
| Bottom | PA[0-7], PF[0-3] |
| Right | PB[0-3], PD[4-5] |
| Top | PB[4-5], PC[0-3], PD[0-3,6], PE[4-5] |
Thermal Information
| Characteristic | Symbol | Value | Unit |
|---|---|---|---|
| Thermal resistance (junction to ambient) b | Θ JA | 54.8 | °C/W |
| Thermal resistance (junction to board) b | Θ JB | 27.5 | °C/W |
| Thermal resistance (junction to case) b | Θ JC | 15.8 | °C/W |
| Thermal metric (junction to top of package) | Ψ JT | 0.7 | °C/W |
| Thermal metric (junction to board) | Ψ JB | 27.1 | °C/W |
| Junction temperature formula | T J | T C + (P • Ψ JT ) T PCB + (P • Ψ JB ) c T A + (P • Θ JA ) d T B + (P • Θ JB ) ef | °C |
a. For more details about thermal metrics and definitions, see the Semiconductor and IC Package Thermal Metrics Application Report (literature number SPRA953).
b. Junction to ambient thermal resistance (Θ JA ), junction to board thermal resistance (Θ JB ), and junction to case thermal resistance (Θ JC ) numbers are determined by a package simulator.
- c. T PCB is the temperature of the board acquired by following the steps listed in the EAI/JESD 51-8 standard summarized in the Semiconductor and IC Package Thermal Metrics Application Report (literature number SPRA953).
- d. Because Θ JA is highly variable and based on factors such as board design, chip/pad size, altitude, and external ambient temperature, it is recommended that equations containing Ψ JT and Ψ JB be used for best results.
e. T B is temperature of the board.
f. Θ JB is not a pure reflection of the internal resistance of the package because it includes the resistance of the testing board and environment. It is recommended that equations containing Ψ JT and Ψ JB be used for best results.
Package Information
MTQF008A - JANUARY 1995 - REVISED DECEMBER 1996
NOTES: A. All linear dimensions are in millimeters.
- B. This drawing is subject to change without notice.
- C. Falls within JEDEC MS-026
- D. May also be thermally enhanced plastic with leads connected to the die pads.
Related Variants
The following components are covered by the same datasheet.
| Part Number | Manufacturer | Package |
|---|---|---|
| TM4C123 | Texas Instruments | — |
| TM4C123GH6PGEI7 | Texas Instruments | 144-LQFP |
| TM4C123GH6PM | Texas Instruments | — |
| TM4C123GH6PMI | Texas Instruments | 64-LQFP |
| TM4C123GH6PMI7 | Texas Instruments | 64-LQFP |
| TM4C123GH6PMI7R | Texas Instruments | — |
| TM4C123GH6PMIR | Texas Instruments | — |
| TM4C123GH6PMT7 | Texas Instruments | — |
| TM4C123GH6PMT7R | Texas Instruments | — |
| TM4C123GH6PMTR | Texas Instruments | — |
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