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ST25DV04KC

Dynamic NFC/RFID Tag IC

The ST25DV04KC is a dynamic nfc/rfid tag ic from STMicroelectronics. View the full ST25DV04KC datasheet below including key specifications, electrical characteristics, absolute maximum ratings.

ST25DV04KC shares its datasheet with ST25DV04KC-JF6L3, whose page lists every part number it covers.

Official ST25DV04KC datasheet (PDF) — the source this page was extracted from.

Manufacturer

STMicroelectronics

Package

TSSOP-8

ST25DV04KC Key Specifications

ParameterValue
Frequency13.56MHz
InterfaceI2C
Mounting TypeSurface Mount
Operating Temperature-40°C ~ 85°C
Package / Case8-SOIC (0.154", 3.90mm Width)
PackagingMouseReel
Standard Pack Qty2500
StandardsISO 15693, NFC
Supplier Device Package8-SO
TypeRFID Transponder
Supply Voltage1.8V ~ 5.5V

ST25DV04KC Overview

Part: ST25DV04KC / ST25DV16KC / ST25DV64KC — STMicroelectronics

Type: Dynamic NFC/RFID Tag IC with EEPROM

Description: Dynamic NFC Forum Type 5 / ISO/IEC 15693 tag IC with 4-, 16- or 64-Kbit EEPROM, 1 MHz I²C interface (1.8–5.5 V supply), a 256-byte fast transfer mode buffer and energy harvesting output.

Operating Conditions:

  • Supply voltage (I²C, VCC): 1.8–5.5 V
  • Operating temperature: -40 to 85 °C (Range 6, all packages); Range 8 extends to 105 °C (UFDFPN8/UFDFPN12) or 125 °C on the I²C interface (SO8N/TSSOP8, RF interface 105 °C max)
  • I²C clock: up to 1 MHz
  • VCC must not rise faster than 1 V/μs at power-up

Absolute Maximum Ratings:

  • Max supply voltage (VCC): 6.5 V (min -0.50 V)
  • I²C input/output voltage (VIO): -0.50 to 6.5 V
  • Max DC output current: 5 mA on SDA, 1.5 mA on GPO
  • RF input voltage between AC0 and AC1 (peak to peak): 11 V
  • AC voltage between AC0/AC1 and VSS: -0.50 to 5.5 V
  • Storage temperature: -65 to 150 °C
  • ESD (HBM, all pins): 2000 V

Key Specs:

  • Memory: 4, 16 or 64 Kbit EEPROM (512 / 2048 / 8192 bytes)
  • I²C write time: typical 5 ms for 1 to 16 bytes; RF write time: typical 5 ms per block
  • Data retention: 40 years
  • Write endurance: 1 million cycles at 25 °C, 600k at 85 °C, 500k at 105 °C, 400k at 125 °C
  • RF fast read: up to 53 Kbit/s
  • Internal tuning capacitance: 28.5 pF
  • Fast transfer buffer: 256 bytes, half-duplex
  • LPD mode: regulator consumption below 1 μA (10-ball and 12-pin packages only)

Features:

  • ISO/IEC 15693 contactless interface, NFC Forum Type 5 certified
  • I²C interface with configurable target address and multi-byte programming (up to 256 bytes)
  • Fast transfer mode between I²C and RF interfaces
  • Energy harvesting analog output (V_EH)
  • Configurable GPO interrupt pin (open drain or CMOS depending on package)
  • Up to four configurable user memory areas, each protectable by passwords (three 64-bit RF passwords and one 64-bit I²C password)
  • Low power down (LPD) input on 10-ball and 12-pin packages
  • RF command interpreter can be enabled or disabled from the I²C host, and I²C has priority (immediate RF switch off)
  • ECOPACK2 (RoHS compliant)

Applications:

  • NFC/RFID contactless tagging with a wired host interface
  • Data exchange between an NFC reader (e.g. smartphone) and an I²C host controller

Package:

  • SO8N (8-pin)
  • TSSOP8 (8-pin)
  • UFDFPN8 (8-pin)
  • WLCSP10 (10-ball)
  • UFDFPN12 (12-pin)

ST25DV04KC Features

The devices offer the following features:

  • A fast transfer mode (FTM), to achieve a fast link between RF and contact worlds, via a 256-byte buffer called mailbox. This mailbox dynamic buffer of 256 bytes can be filled or emptied via either RF or I²C.
  • A GPO pin, which indicates incoming events to the contact side, like RF events (RF field changes, RF activity, RF writing completion, or mailbox message availability) or I²C events (I²C write completion, RF switch off from I²C).
  • An energy harvesting element to deliver mW of power when external conditions make it possible.
  • RF management, which allows ST25DVxxKC to ignore RF requests.

All these features can be programmed by setting the static and/or dynamic registers. The devices can be partially customized using configuration registers located in the system area. These registers are:

  • Dedicated to data memory organization and protection: ENDA i , I2CSS, RFAiSS, LOCK_CCFILE.
  • Dedicated to fast transfer mode: FTM
  • Dedicated to observation: GPO, IT_TIME
  • Dedicated to RF: RF_MNGT, EH_MODE
  • Dedicated the structure: LOCK_CFG
  • Dedicated to I²C configuration: I2C_CFG

A set of additional registers (such as (DSFID, AFI, IC_REF) allows the user to identify and customize the product .

ST25DV04KC Electrical Characteristics

This section summarizes the operating and measurement conditions, and the DC and AC characteristics of the device in RF mode.

The parameters in the following tables are derived from tests performed under the measurement conditions summarized in the relevant tables. Check that the operating conditions in the circuit match the measurement conditions when relying on the quoted parameters.

Table 256. RF characteristics

SymbolParameterConditionConditionMinTypMaxUnit
f CCExternal RF signal frequency--13.55313.5613.567MHz
H_ISOOperating field according to ISO (1)Range 6T A = -40 °C to 85 °C150-5000mA/m
H_ISOOperating field according to ISO (1)Range 8T A = -40 °C to 105 °C150-5000mA/m
MI CARRIER10% carrier modulation index MI=(A-B)/(A+B) (1)150 mA/m > H_ISO > 1000 mA/m150 mA/m > H_ISO > 1000 mA/m10-30%
MI CARRIER100% carrier modulation index (1)MI=(A-B)/(A+B)MI=(A-B)/(A+B)95-100%
t MINCDMinimum time from carrier generation to first data (1)From H-field minFrom H-field min--1ms
f SHSubcarrier frequency high (1)f CC /32f CC /32-423.75-kHz
f SLSubcarrier frequency low (1)f CC /28f CC /28-484.28-kHz
t 1Time for ST25DVxxKC response (1)4352/f CC4352/f CC318.6320.9323.3μs
t 2Time between commands (1)4192/f CC4192/f CC309311.5314μs
t 3Time between commands (1)4384/f CC4384/f CC323.3--μs
W t_BlockRF User memory write time (including internal Verify) (1)(2)1 block1 block-5.2-ms
W t_BlockRF User memory write time (including internal Verify) (1)(2)4 blocks4 blocks-19.7-ms
W t_ByteRF system memory write time including internal Verify) (1)(2)1 byte1 byte-4.9-ms
W t_MBRF Mailbox write time (from VCD request SOF to ST25DVxxKC response EOF) (1)(2)256 bytes256 bytes-80.7-ms
Read_MBRF Mailbox read time (from VCD request SOF to ST25DVxxKC response EOF) (1)(2)256 bytes256 bytes-81-ms
C TUNInternal tuning capacitor (3)f = 13.56 MHzf = 13.56 MHz26.528.530.5pF
V BACKBackscattered level as defined by ISO test (1)--10--mV
V MIN_1RF input voltage amplitude between AC0 and AC1, V pin left floating, VAC0-VAC1Inventory and Read operationsInventory and Read operations-4.8-V
V MIN_1SS peak to peak (1)Write operationsWrite operations-5.25-V
V MIN_2AC voltage between AC0 and V SS or between AC1 and V SS (1)Inventory and Read operationsInventory and Read operations-2.25-V
V MIN_2AC voltage between AC0 and V SS or between AC1 and V SS (1)Write operationsWrite operations-2.7-V
t bootRFWithout DC supply (No V CC ) (1)Set up timeSet up time-0.6-ms
t RF_OFFRF OFF time (1)Chip resetChip reset2--ms

Note:

All timing characterization where performed on a reference antenna with the following characteristics:

  • ISO antenna class 1
  • Tuning frequency = 13.7 MHz

Table 257. Operating conditions

SymbolParameterParameterMin.Max.Unit
T AAmbient operating temperatureRange 6 Range 8-40 -4085 105°C

Figure 83. ASK modulated signal shows an ASK modulated signal from the VCD to the ST25DVxxKC. The test conditions for the AC/DC parameters are:

  • Close coupling condition with tester antenna (1 mm)
  • ST25DVxxKC performance measured at the tag antenna
  • ST25DVxxKC synchronous timing, transmit and receive

Figure 83. ASK modulated signal

ST25DV04KC Absolute Maximum Ratings

Stressing the device above the ratings listed in Table 245 may cause permanent damage to the device. These are stress ratings only, and operation of the device, at these or any other conditions above those indicated in the operating sections of this specification, is not implied. Exposure to absolute maximum rating conditions for extended periods may affect the device reliability. Device mission profile (application conditions) is compliant with JEDEC JESD47 qualification standard. Extended mission profiles can be assessed on demand.

Refer also to the STMicroelectronics SURE program and other relevant quality documents.

Table 245. Absolute maximum ratings

SymbolParameterParameterParameterParameterMin.Max.Unit
T AAmbient operating temperatureRange 6All packagesRF and I 2 C interfaces-4085°C
T AAmbient operating temperatureRange 8UFDFPN8, UFDFPN12RF and I 2 C interfaces- 40105°C
T AAmbient operating temperatureRange 8SO8N, TSSOPRF interface- 40105°C
T AAmbient operating temperatureRange 8SO8N, TSSOPI 2 C interface- 40125°C
T STGStorage temperatureUFDFPN8 (MLP8),SO8N, TSSOP8, UFDFPN12, WLCSP10UFDFPN8 (MLP8),SO8N, TSSOP8, UFDFPN12, WLCSP10UFDFPN8 (MLP8),SO8N, TSSOP8, UFDFPN12, WLCSP10- 65150°C
T LEADLead temperature during solderingLead temperature during solderingLead temperature during solderingLead temperature during solderingsee note (1)see note (1)°C
V IOI 2 C input or output rangeI 2 C input or output rangeI 2 C input or output rangeI 2 C input or output range- 0.506.5V
V CCI 2 C supply voltageI 2 C supply voltageI 2 C supply voltageI 2 C supply voltage- 0.506.5V
I OL_MAX_SDADC output current on pin SDA (when equal to 0)DC output current on pin SDA (when equal to 0)DC output current on pin SDA (when equal to 0)DC output current on pin SDA (when equal to 0)-5mA
I OL_MAX_GPODC output current on pin GPO (when equal to 0)DC output current on pin GPO (when equal to 0)DC output current on pin GPO (when equal to 0)DC output current on pin GPO (when equal to 0)-1.5mA
V MAX_1RF input voltage amplitude peak to peak between AC0 and AC1, V SS pin left floating (2)RF input voltage amplitude peak to peak between AC0 and AC1, V SS pin left floating (2)RF input voltage amplitude peak to peak between AC0 and AC1, V SS pin left floating (2)V AC0 - V AC1-11V
V MAX_2AC voltage between AC0 and V SS , or AC1 and V SS (2)AC voltage between AC0 and V SS , or AC1 and V SS (2)AC voltage between AC0 and V SS , or AC1 and V SS (2)V AC0 - V SS , or V AC1 - V SS- 0.505.5V
V ESDElectrostatic discharge voltage (human body model) (3)Electrostatic discharge voltage (human body model) (3)Electrostatic discharge voltage (human body model) (3)All pins-2000V
  1. Evaluated by characterization - Not tested in production.
  2. AEC-Q100-002 (compliant with JEDEC Std JESD22-A114, C1 = 100 pF, R1 = 1500 Ω, R2 = 500 Ω)

ST25DV04KC Thermal Information

Table 258. Thermal characteristics

SymbolParameterValueUnit
Ɵ JAThermal resistance junction-ambient SO8N 4.9 x 6 mm, 1.27 mm pitch package (1)219°C/W
Ɵ JAThermal resistance junction-ambient TSSOP8 3 x 6.4 mm, 0.65 mm pitch package (1)255°C/W
Ɵ JAThermal resistance junction-ambient UFDFN8 2 × 3 mm, 0.5 mm pitch package (1)(2)67°C/W
  1. Jedec JESD51-7 2s2p board

  2. Exposed pad soldered to board

DT19784V1

ST25DV04KC Package Information

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark.

Variants on the same datasheet

These parts have exact links to the same datasheet. They are candidates to compare, not verified drop-in replacements; check package, pinout and electrical limits.

Part NumberManufacturerPackage
ST25DV04KC-IESTMicroelectronicsSO8N
ST25DV04KC-JFSTMicroelectronics—
ST25DV04KC-JF6L3STMicroelectronics10-XFBGA, WLCSP

Other RF / Wireless

All RF / Wireless datasheetsAll STMicroelectronics datasheets (808)

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