ST25DV04KC-IE
Dynamic NFC/RFID tag IC with EEPROMThe ST25DV04KC-IE is a dynamic nfc/rfid tag ic with eeprom from STMicroelectronics. View the full ST25DV04KC-IE datasheet below including electrical characteristics.
Overview
Part: ST25DV04KC, ST25DV16KC, ST25DV64KC — STMicroelectronics
Type: Dynamic NFC/RFID tag IC with EEPROM
Description: Dynamic NFC/RFID tag IC with 4-Kbit, 16-Kbit, or 64-Kbit EEPROM, supporting ISO/IEC 15693 and NFC Forum Type 5 tag, with a 1 MHz I2C interface, fast transfer mode, and energy harvesting capability.
Operating Conditions:
- Supply voltage: 1.8 V to 5.5 V
- Operating temperature: -40 °C to 125 °C (depending on package)
- I2C serial interface speed: 1 MHz
- RF data rate: up to 53 kbit/s
Absolute Maximum Ratings:
- Max junction/storage temperature: 125 °C (for SO8N and TSSOP8 packages)
Key Specs:
- EEPROM capacity: 4-Kbit, 16-Kbit, or 64-Kbit
- I2C write programming: up to 256 bytes
- I2C write time: typical 5 ms for 1 to 16 bytes
- RF write time: typical 5 ms for 1 block
- Data retention: 40 years
- Write cycles endurance: 1 million cycles at 25 °C, 400k cycles at 125 °C
- Internal tuning capacitance: 28.5 pF
- Fast transfer buffer: 256 bytes
Features:
- Two-wire I2C serial interface supports 1MHz protocol
- Configurable I2C slave address
- Contactless interface based on ISO/IEC 15693 and NFC Forum Type 5 tag certified
- Custom fast read access up to 53 kbit/s
- Energy harvesting analog output pin
- User memory protection with three 64-bit RF passwords and one 64-bit I2C password
- Configurable GPO interruption pin on multiple RF and I2C events
- RF command interpreter enabled/disabled from I2C host controller
Applications:
Package:
- SO8N (8-pin)
- TSSOP8 (8-pin)
- UDFPN8 (8-pin)
- UFDFPN12 (12-pin)
Features
- A fast transfer mode (FTM), to achieve a fast link between RF and contact worlds, via a 256 byte buffer called Mailbox. This mailbox dynamic buffer of 256 byte can be filled or emptied via either RF or I 2 C.
- A GPO pin, which indicates incoming events to the contact side, like RF events (RF field changes, Rf activity, Rf writing completion or mailbox message availability) or I 2 C events (I 2 C write completion, RF switch off from I 2 C).
- An Energy Harvesting element to deliver μW of power when external conditions make it possible.
- RF management, which allows ST25DVxxKC to ignore RF requests.
All these features can be programmed by setting static and/or dynamic registers of the ST25DVxxKC. ST25DVxxKC can be partially customized using configuration registers located in the system area.
These registers are:
- dedicated to Data Memory organization and protection ENDA i , I2CSS, RFAiSS, LOCK_CCFILE.
- dedicated to fast transfer mode FTM
- dedicated to observation, GPO, IT_TIME
- dedicated to RF , RF_MNGT, EH_MODE
- dedicated the device's structure LOCK_CFG
- dedicated to I 2 C configuration, I2C_CFG
A set of additional registers allows to identify and customize the product (DSFID, AFI, IC_REF, etc.).
Electrical Characteristics
| Symbol | Parameter | Test condition | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| I LI | Input leakage current (SCL, SDA) | V IN = V SS or V CC device in Standby mode | - | 0.03 | ±0.1 | μA |
| I LI | Input leakage current (LPD) | V IN = V SS device in Standby mode | - | 0.1 | ±0.5 | μA |
| I LO | Output leakage current (SDA) | SDA in Hi-Z, external voltage applied on SDA: V SS or V CC | - | 0.03 | ±0.1 | μA |
| I CC_E 2 | Operating Supply current (Device select E 2 Address) Read (1) | V CC = 1.8 V, f C = 1MHz (rise/fall time < 50 ns) | - | 116 | 160 | μA |
| I CC_E 2 | Operating Supply current (Device select E 2 Address) Read (1) | V CC = 3.3 V, f C = 1MHz (rise/fall time < 50 ns) | - | 220 | 240 | μA |
| I CC_E 2 | Operating Supply current (Device select E 2 Address) Read (1) | V CC = 5.5 V, f C = 1MHz (rise/fall time < 50 ns) | - | 510 | 550 | μA |
| I CC_MB | Operating Supply current (Device select MB Address) Read (1) | V CC = 1.8 V, f C = 1MHz (rise/fall time < 50 ns) | - | 116 | 160 | μA |
| I CC_MB | Operating Supply current (Device select MB Address) Read (1) | V CC = 3.3 V, f C = 1MHz (rise/fall time < 50 ns) | - | 220 | 240 | μA |
| I CC_MB | Operating Supply current (Device select MB Address) Read (1) | V CC = 5.5 V, f C = 1MHz (rise/fall time < 50 ns) | - | 510 | 550 | μA |
| I CC0 | Operating Supply current (Device select E 2 Address) Write (1) | V CC = 1.8 V, f C = 1MHz (rise/fall time < 50 ns) | - | 110 | 210 | μA |
| I CC0 | Operating Supply current (Device select E 2 Address) Write (1) | V CC = 3.3 V, f C = 1MHz (rise/fall time < 50 ns) | - | 110 | 220 | μA |
| I CC0 | Operating Supply current (Device select E 2 Address) Write (1) | V CC = 5.5 V, f C = 1MHz (rise/fall time < 50 ns) | - | 130 | 250 | μA |
| I CC0_MB | Operating Supply current (Device select MB Address) Write (1) | V CC = 1.8 V, f C = 1MHz (rise/fall time < 50 ns) | - | 170 | 200 | μA |
| I CC0_MB | Operating Supply current (Device select MB Address) Write (1) | V CC = 3.3 V, f C = 1MHz (rise/fall time < 50 ns) | - | 280 | 300 | μA |
| I CC0_MB | Operating Supply current (Device select MB Address) Write (1) | V CC = 5.5 V, f C = 1MHz (rise/fall time < 50 ns) | - | 520 | 600 | μA |
| I CC1 (LPD = 1) | Low power down supply current | V CC = 1.8 V | - | 0.84 | 1.5 | μA |
| I CC1 (LPD = 1) | Low power down supply current | V CC = 3.3 V | - | 1.3 | 2 | μA |
| I CC1 (LPD = 1) | Low power down supply current | V CC = 5.5 V | - | 1.7 | 3 | μA |
| I CC1_PON (LPD = 0) | Static Standby supply current after power ON or device select stop or time out | V CC = 1.8 V | - | 72 | 100 | μA |
| I CC1_PON (LPD = 0) | Static Standby supply current after power ON or device select stop or time out | V CC = 3.3 V | - | 76 | 100 | μA |
| I CC1_PON (LPD = 0) | Static Standby supply current after power ON or device select stop or time out | V CC = 5.5 V | - | 87 | 120 | μA |
| V IL | Input low voltage (SDA, SCL) | V CC = 1.8 V | -0.45 | - | 0.25 V CC | V |
| V IL | Input low voltage (SDA, SCL) | V CC = 3.3 V | -0.45 | - | 0.3 V CC | V |
| V IL | Input low voltage (SDA, SCL) | V CC = 5.5 V | -0.45 | - | 0.3 V CC | V |
| V IL_LPD | Input low voltage (LPD) | V CC = 3.3 V | -0.45 | - | 0.2 V CC | V |
| Symbol | Parameter | Test condition | Min. | Typ. | Max. | Unit |
| V CC = 1.8 V | 0.75 V CC | - | V CC + 1 | |||
| V IH | Input high voltage (SDA, SCL) | V CC = 3.3 V | 0.75 V CC | - | V CC + 1 | V |
| V CC = 5.5 V | 0.75 V CC | - | V CC + 1 | |||
| V CC = 1.8 V | 0.85 V CC | - | V CC + 1 | |||
| V IH_LPD | Input high voltage (LPD) | V CC = 3.3 V | 0.85 V CC | - | V CC + 1 | V |
| V CC = 5.5 V | 0.85 V CC | - | V CC + 1 | |||
| I OL = 1 mA, V CC = 1.8 V | - | 0.05 | 0.4 | |||
| V OL_SDA | Output low voltage SDA (1 MHz) | I OL = 2.1 mA, V CC = 3.3 V | - | 0.075 | 0.4 | V |
| I OL = 3 mA, V CC = 5.5 V | - | 0.09 | 0.4 | |||
| V CC_Power_up | Device Select Acknowledge | f C = 100 KHz (2) | - | 1.48 | 1.7 | V |
Table 249. I 2 C DC characteristics up to 125 °C
| Symbol | Parameter | Test condition | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| I LI | Input leakage current (SCL, SDA) | V IN = V SS or V CC device in Standby mode | - | 0.03 | ±0.1 | μA |
| I LI | Input leakage current (LPD) | V IN = V SS device in Standby mode | - | 0.1 | ±0.5 | μA |
| I LO | Output leakage current (SDA) | SDA in Hi-Z, external voltage applied on SDA: V SS or V CC | - | 0.03 | ±0.1 | μA |
| I CC _E 2 | Operating Supply current (Device select E 2 Address) Read (1) | V CC = 1.8 V, f C = 1MHz (rise/fall time < 50 ns) | - | 126 | 180 | μA |
| I CC _E 2 | Operating Supply current (Device select E 2 Address) Read (1) | V CC = 3.3 V, f C = 1MHz (rise/fall time < 50 ns) | - | 230 | 260 | μA |
| I CC _E 2 | Operating Supply current (Device select E 2 Address) Read (1) | V CC = 5.5 V, f C = 1MHz (rise/fall time < 50 ns) | - | 510 | 550 | μA |
| I CC_MB | Operating Supply current (Device select MB Address) Read (1) | V CC = 1.8 V, f C = 1MHz (rise/fall time < 50 ns) | - | 126 | 180 | μA |
| I CC_MB | Operating Supply current (Device select MB Address) Read (1) | V CC = 3.3 V, f C = 1MHz (rise/fall time < 50 ns) | - | 230 | 260 | μA |
| I CC_MB | Operating Supply current (Device select MB Address) Read (1) | V CC = 5.5 V, f C = 1MHz (rise/fall time < 50 ns) | - | 510 | 550 | μA |
| I CC0 | Operating Supply current (Device select E 2 Address) Write (1) | V CC = 1.8 V, f C = 1MHz (rise/fall time < 50 ns) | - | 120 | 220 | μA |
| I CC0 | Operating Supply current (Device select E 2 Address) Write (1) | V CC = 3.3 V, f C = 1MHz (rise/fall time < 50 ns) | - | 120 | 230 | μA |
| I CC0 | Operating Supply current (Device select E 2 Address) Write (1) | V CC = 5.5 V, f C = 1MHz (rise/fall time < 50 ns) | - | 140 | 260 | μA |
| I CC0_MB | Operating Supply current (Device select MB Address) Write (1) | V CC = 1.8 V, f C = 1MHz (rise/fall time < 50 ns) | - | 180 | 220 | μA |
Table 249. I 2 C DC characteristics up to 125 °C
I2C DC and AC parameters
| Symbol | Parameter | Test condition | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| I CC0_MB | Operating Supply current (Device select MB Address) Write (1) | V CC = 3.3 V, f C = 1MHz (rise/fall time < 50 ns) | - | 290 | 320 | μA |
| I CC0_MB | Operating Supply current (Device select MB Address) Write (1) | V CC = 5.5 V, f C = 1MHz (rise/fall time < 50 ns) | - | 520 | 600 | μA |
| I CC1 (LPD = 1) | Low power down supply current | V CC = 1.8 V | - | 2.5 | 5 | μA |
| I CC1 (LPD = 1) | Low power down supply current | V CC = 3.3 V | - | 3 | 6 | μA |
| I CC1 (LPD = 1) | Low power down supply current | V CC = 5.5 V | - | 4 | 7 | μA |
| I CC1_PON (LPD = 0) | Static Standby supply current after power ON or device select stop or time out | V CC = 1.8 V | - | 78 | 110 | μA |
| I CC1_PON (LPD = 0) | Static Standby supply current after power ON or device select stop or time out | V CC = 3.3 V V CC = 5.5 V | - - | 82 95 | 110 130 | μA |
| V IL | Input low voltage (SDA, SCL) | V CC = 1.8 V | -0.45 | - | 0.25 V CC | V |
| V IL | Input low voltage (SDA, SCL) | V CC = 3.3 V | -0.45 | - | 0.3 V CC | V |
| V IL_LPD | Input low voltage (LPD) | V CC = 3.3 V | -0.45 | - | 0.2 V CC | V |
| V IH | Input high voltage (SDA, SCL) | V CC = 1.8 V | 0.75 V CC | - | V CC +1 | V |
| V IH | Input high voltage (SDA, SCL) | V CC = 3.3 V | 0.75 V CC | - | V CC +1 | V |
| V IH | Input high voltage (SDA, SCL) | V CC = 5.5 V | 0.75 V CC | - | V CC +1 | V |
| V IH_LPD | Input high voltage (LPD) | V CC = 1.8 V | 0.85 V CC +1 | - | V CC +1 | V |
| V IH_LPD | Input high voltage (LPD) | V CC = 3.3 V | 0.85 V CC +1 | - | V CC +1 | V |
| V IH_LPD | Input high voltage (LPD) | V CC = 5.5 V | 0.85 V CC +1 | - | V CC +1 | V |
| V OL_SDA | Output low voltage SDA (1 MHz) | I OL = 1 mA, V CC = 1.8 V | - | 0.05 | 0.4 | V |
| V OL_SDA | Output low voltage SDA (1 MHz) | I OL = 2.1 mA, V CC = 3.3 V | - | 0.08 | 0.4 | V |
| V OL_SDA | Output low voltage SDA (1 MHz) | I OL = 3 mA, V CC = 5.5 V | - | 0.1 | 0.4 | V |
| V CC_Power_up | Device Select Acknowledge | f C = 100 KHz (2) | - | 1.48 | 1.7 | V |
| V CC_Power_up | Device Select Acknowledge | V |
Thermal Information
Table 257. Thermal characteristics
| Symbol | Parameter | Value | Unit |
|---|---|---|---|
| Ɵ JA | Thermal resistance junction-ambient SO8N 4.9 x 6 mm, 1.27 mm pitch package (1) | 219 | °C/W |
| Ɵ JA | Thermal resistance junction-ambient TSSOP8 3 x 6.4 mm, 0.65 mm pitch package (1) Thermal resistance junction-ambient | 255 67 | °C/W |
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Jedec JESD51-7 2s2p board
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Exposed pad soldered to board
Package Information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com . ECOPACK is an ST trademark.
Related Variants
The following components are covered by the same datasheet.
| Part Number | Manufacturer | Package |
|---|---|---|
| ST25DV04KC | STMicroelectronics | — |
| ST25DV04KC-IE6S3 | STMicroelectronics | 8-SOIC (0.154", 3.90mm Width) |
| ST25DV04KC-JF | STMicroelectronics | — |
| ST25DV16KC | STMicroelectronics | — |
| ST25DV64KC | STMicroelectronics | — |
| ST25DVXXKC | STMicroelectronics | — |
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