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ST25DV04KC-IE

Dynamic NFC/RFID tag IC with EEPROM

The ST25DV04KC-IE is a dynamic nfc/rfid tag ic with eeprom from STMicroelectronics. View the full ST25DV04KC-IE datasheet below including electrical characteristics, absolute maximum ratings.

Manufacturer

STMicroelectronics

Package

SO8N

Overview

The ST25DV04KC, ST25DV16KC, and ST25DV64KC devices (hereinafter referred collectively to as ST25DVxxKC) are NFC RFID tags offering, respectively, 4, 16, and 64 -Kbit of electrically erasable programmable memory (EEPROM). These devices feature two interfaces: the first one is an I²C serial link that can be operated from a DC power supply, the second one is an RF link activated when the device acts as a contactless memory powered by the received carrier electromagnetic wave.

In I²C mode, the user memory contains 512 (ST25DV04KC), 2048 (ST25DV16KC), or 8192 (ST25DV64KC) bytes, which can be split in four flexible and protectable areas.

In RF mode, following ISO/IEC 15693 or NFC Forum Type 5 recommendations, the user memory contains 128 (ST25DV04KC), 512 (ST25DV16KC), or 2048 (ST25DV64KC) blocks of 4 bytes, which can be split in four flexible and protectable areas.

These devices offer a fast transfer mode between the RF and contact interfaces, thanks to a 256 bytes volatile buffer (also called mailbox). In addition, the GPO pin provides data about incoming events, like RF field detection, RF activity in progress, or mailbox message availability. An energy harvesting feature is also available.

Features

The devices offer the following features:

  • A fast transfer mode (FTM), to achieve a fast link between RF and contact worlds, via a 256-byte buffer called mailbox. This mailbox dynamic buffer of 256 bytes can be filled or emptied via either RF or I²C.
  • A GPO pin, which indicates incoming events to the contact side, like RF events (RF field changes, RF activity, RF writing completion, or mailbox message availability) or I²C events (I²C write completion, RF switch off from I²C).
  • An energy harvesting element to deliver mW of power when external conditions make it possible.
  • RF management, which allows ST25DVxxKC to ignore RF requests.

All these features can be programmed by setting the static and/or dynamic registers. The devices can be partially customized using configuration registers located in the system area. These registers are:

  • Dedicated to data memory organization and protection: ENDA i , I2CSS, RFAiSS, LOCK_CCFILE.
  • Dedicated to fast transfer mode: FTM
  • Dedicated to observation: GPO, IT_TIME
  • Dedicated to RF: RF_MNGT, EH_MODE
  • Dedicated the structure: LOCK_CFG
  • Dedicated to I²C configuration: I2C_CFG

A set of additional registers (such as (DSFID, AFI, IC_REF) allows the user to identify and customize the product .

Electrical Characteristics

This section summarizes the operating and measurement conditions, and the DC and AC characteristics of the device in RF mode.

The parameters in the following tables are derived from tests performed under the measurement conditions summarized in the relevant tables. Check that the operating conditions in the circuit match the measurement conditions when relying on the quoted parameters.

Table 256. RF characteristics

SymbolParameterConditionConditionMinTypMaxUnit
f CCExternal RF signal frequency--13.55313.5613.567MHz
H_ISOOperating field according to ISO (1)Range 6T A = -40 °C to 85 °C150-5000mA/m
H_ISOOperating field according to ISO (1)Range 8T A = -40 °C to 105 °C150-5000mA/m
MI CARRIER10% carrier modulation index MI=(A-B)/(A+B) (1)150 mA/m > H_ISO > 1000 mA/m150 mA/m > H_ISO > 1000 mA/m10-30%
MI CARRIER100% carrier modulation index (1)MI=(A-B)/(A+B)MI=(A-B)/(A+B)95-100%
t MINCDMinimum time from carrier generation to first data (1)From H-field minFrom H-field min--1ms
f SHSubcarrier frequency high (1)f CC /32f CC /32-423.75-kHz
f SLSubcarrier frequency low (1)f CC /28f CC /28-484.28-kHz
t 1Time for ST25DVxxKC response (1)4352/f CC4352/f CC318.6320.9323.3μs
t 2Time between commands (1)4192/f CC4192/f CC309311.5314μs
t 3Time between commands (1)4384/f CC4384/f CC323.3--μs
W t_BlockRF User memory write time (including internal Verify) (1)(2)1 block1 block-5.2-ms
W t_BlockRF User memory write time (including internal Verify) (1)(2)4 blocks4 blocks-19.7-ms
W t_ByteRF system memory write time including internal Verify) (1)(2)1 byte1 byte-4.9-ms
W t_MBRF Mailbox write time (from VCD request SOF to ST25DVxxKC response EOF) (1)(2)256 bytes256 bytes-80.7-ms
Read_MBRF Mailbox read time (from VCD request SOF to ST25DVxxKC response EOF) (1)(2)256 bytes256 bytes-81-ms
C TUNInternal tuning capacitor (3)f = 13.56 MHzf = 13.56 MHz26.528.530.5pF
V BACKBackscattered level as defined by ISO test (1)--10--mV
V MIN_1RF input voltage amplitude between AC0 and AC1, V pin left floating, VAC0-VAC1Inventory and Read operationsInventory and Read operations-4.8-V
V MIN_1SS peak to peak (1)Write operationsWrite operations-5.25-V
V MIN_2AC voltage between AC0 and V SS or between AC1 and V SS (1)Inventory and Read operationsInventory and Read operations-2.25-V
V MIN_2AC voltage between AC0 and V SS or between AC1 and V SS (1)Write operationsWrite operations-2.7-V
t bootRFWithout DC supply (No V CC ) (1)Set up timeSet up time-0.6-ms
t RF_OFFRF OFF time (1)Chip resetChip reset2--ms

Note:

All timing characterization where performed on a reference antenna with the following characteristics:

  • ISO antenna class 1
  • Tuning frequency = 13.7 MHz

Table 257. Operating conditions

SymbolParameterParameterMin.Max.Unit
T AAmbient operating temperatureRange 6 Range 8-40 -4085 105°C

Figure 83. ASK modulated signal shows an ASK modulated signal from the VCD to the ST25DVxxKC. The test conditions for the AC/DC parameters are:

  • Close coupling condition with tester antenna (1 mm)
  • ST25DVxxKC performance measured at the tag antenna
  • ST25DVxxKC synchronous timing, transmit and receive

Figure 83. ASK modulated signal

Absolute Maximum Ratings

Stressing the device above the ratings listed in Table 245 may cause permanent damage to the device. These are stress ratings only, and operation of the device, at these or any other conditions above those indicated in the operating sections of this specification, is not implied. Exposure to absolute maximum rating conditions for extended periods may affect the device reliability. Device mission profile (application conditions) is compliant with JEDEC JESD47 qualification standard. Extended mission profiles can be assessed on demand.

Refer also to the STMicroelectronics SURE program and other relevant quality documents.

Table 245. Absolute maximum ratings

SymbolParameterParameterParameterParameterMin.Max.Unit
T AAmbient operating temperatureRange 6All packagesRF and I 2 C interfaces-4085°C
T AAmbient operating temperatureRange 8UFDFPN8, UFDFPN12RF and I 2 C interfaces- 40105°C
T AAmbient operating temperatureRange 8SO8N, TSSOPRF interface- 40105°C
T AAmbient operating temperatureRange 8SO8N, TSSOPI 2 C interface- 40125°C
T STGStorage temperatureUFDFPN8 (MLP8),SO8N, TSSOP8, UFDFPN12, WLCSP10UFDFPN8 (MLP8),SO8N, TSSOP8, UFDFPN12, WLCSP10UFDFPN8 (MLP8),SO8N, TSSOP8, UFDFPN12, WLCSP10- 65150°C
T LEADLead temperature during solderingLead temperature during solderingLead temperature during solderingLead temperature during solderingsee note (1)see note (1)°C
V IOI 2 C input or output rangeI 2 C input or output rangeI 2 C input or output rangeI 2 C input or output range- 0.506.5V
V CCI 2 C supply voltageI 2 C supply voltageI 2 C supply voltageI 2 C supply voltage- 0.506.5V
I OL_MAX_SDADC output current on pin SDA (when equal to 0)DC output current on pin SDA (when equal to 0)DC output current on pin SDA (when equal to 0)DC output current on pin SDA (when equal to 0)-5mA
I OL_MAX_GPODC output current on pin GPO (when equal to 0)DC output current on pin GPO (when equal to 0)DC output current on pin GPO (when equal to 0)DC output current on pin GPO (when equal to 0)-1.5mA
V MAX_1RF input voltage amplitude peak to peak between AC0 and AC1, V SS pin left floating (2)RF input voltage amplitude peak to peak between AC0 and AC1, V SS pin left floating (2)RF input voltage amplitude peak to peak between AC0 and AC1, V SS pin left floating (2)V AC0 - V AC1-11V
V MAX_2AC voltage between AC0 and V SS , or AC1 and V SS (2)AC voltage between AC0 and V SS , or AC1 and V SS (2)AC voltage between AC0 and V SS , or AC1 and V SS (2)V AC0 - V SS , or V AC1 - V SS- 0.505.5V
V ESDElectrostatic discharge voltage (human body model) (3)Electrostatic discharge voltage (human body model) (3)Electrostatic discharge voltage (human body model) (3)All pins-2000V
  1. Evaluated by characterization - Not tested in production.
  2. AEC-Q100-002 (compliant with JEDEC Std JESD22-A114, C1 = 100 pF, R1 = 1500 Ω, R2 = 500 Ω)

Thermal Information

Table 258. Thermal characteristics

SymbolParameterValueUnit
Ɵ JAThermal resistance junction-ambient SO8N 4.9 x 6 mm, 1.27 mm pitch package (1)219°C/W
Ɵ JAThermal resistance junction-ambient TSSOP8 3 x 6.4 mm, 0.65 mm pitch package (1)255°C/W
Ɵ JAThermal resistance junction-ambient UFDFN8 2 × 3 mm, 0.5 mm pitch package (1)(2)67°C/W
  1. Jedec JESD51-7 2s2p board

  2. Exposed pad soldered to board

DT19784V1

Package Information

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark.

Related Variants

The following components are covered by the same datasheet.

Part NumberManufacturerPackage
ST25DV04KCSTMicroelectronics
ST25DV04KC-JFSTMicroelectronics
ST25DV04KC-JF6L3STMicroelectronics10-XFBGA, WLCSP
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