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ST25DV64KC

Dynamic NFC/RFID Tag IC

The ST25DV64KC is a dynamic nfc/rfid tag ic from STMicroelectronics. View the full ST25DV64KC datasheet below including key specifications, electrical characteristics.

ST25DV64KC shares its datasheet with ST25DV04KC-IE6S3, whose page lists every part number it covers.

Official ST25DV64KC datasheet (PDF) — the source this page was extracted from.

ST25DV64KC Key Specifications

ParameterValue
Frequency13.56MHz
InterfaceI2C
Mounting TypeSurface Mount
Operating Temperature-40°C ~ 85°C
Package / Case8-SOIC (0.154", 3.90mm Width)
PackagingMouseReel
Standard Pack Qty2500
StandardsISO 15693, NFC
Supplier Device Package8-SO
TypeRFID Transponder
Supply Voltage1.8V ~ 5.5V

ST25DV64KC Overview

Part: ST25DV04KC / ST25DV16KC / ST25DV64KC (ST25DV04KC-IE6S3, TSSOP8 package) — STMicroelectronics

Type: Dynamic NFC/RFID Tag IC with EEPROM

Description: Dynamic NFC Forum Type 5 / ISO/IEC 15693 tag IC with 4-Kbit, 16-Kbit or 64-Kbit EEPROM, a 1 MHz I²C interface (1.8–5.5 V supply), a 256-byte fast transfer mode buffer and an energy harvesting analog output.

Operating Conditions:

  • Supply voltage (VCC, I²C side): 1.8–5.5 V
  • Operating temperature: -40 to 85 °C (Range 6); Range 8 on TSSOP8 and SO8N is -40 to 125 °C, with 105 °C max on the RF interface
  • I²C clock: up to 1 MHz
  • RF mode: ISO/IEC 15693, fast read up to 53 kbit/s

Absolute Maximum Ratings:

Key Specs:

  • Memory: 4 Kbit (512 bytes), 16 Kbit (2048 bytes) or 64 Kbit (8192 bytes) depending on version
  • Internal tuning capacitance: 28.5 pF
  • Write time: typically 5 ms for 1 to 16 bytes via I²C, or 1 block via RF
  • Data retention: 40 years
  • Write endurance: 1 million cycles at 25 °C, 600k at 85 °C, 500k at 105 °C, 400k at 125 °C
  • I²C multi-byte write: up to 256 bytes
  • Fast transfer mode buffer: 256 bytes, half-duplex
  • GPO: open drain on 8-pin packages, requires pull-up > 4.7 kΩ
  • VCC rise time: no faster than 1 V/μs

Features:

  • NFC Forum Type 5 tag certified
  • Based on ISO/IEC 15693
  • Configurable I²C slave address
  • Fast transfer mode between I²C and RF interfaces
  • Energy harvesting analog output (V_EH)
  • Configurable GPO interrupt pin (RF field change, memory write, activity, fast transfer end, and others)
  • 1 to 4 configurable user memory areas with 64-bit password protection (three RF passwords and one I²C password for user areas)
  • RF command interpreter can be enabled or disabled from the I²C host
  • I²C priority: immediate RF switch off
  • ECOPACK2 (RoHS compliant)

Applications:

  • NFC/RFID tagging with an I²C host controller
  • Contactless data transfer between RF reader and host MCU
  • Low-power wake-up via the GPO interrupt

Package:

  • TSSOP8 (8-pin, open drain GPO)
  • SO8N (8-pin, open drain GPO)
  • UFDFPN8 (8-pin, open drain GPO)
  • UFDFPN12 (12-pin, CMOS GPO, with LPD and VDCG pins)

ST25DV64KC Features

  • A fast transfer mode (FTM), to achieve a fast link between RF and contact worlds, via a 256 byte buffer called Mailbox. This mailbox dynamic buffer of 256 byte can be filled or emptied via either RF or I 2 C.
  • A GPO pin, which indicates incoming events to the contact side, like RF events (RF field changes, Rf activity, Rf writing completion or mailbox message availability) or I 2 C events (I 2 C write completion, RF switch off from I 2 C).
  • An Energy Harvesting element to deliver μW of power when external conditions make it possible.
  • RF management, which allows ST25DVxxKC to ignore RF requests.

All these features can be programmed by setting static and/or dynamic registers of the ST25DVxxKC. ST25DVxxKC can be partially customized using configuration registers located in the system area.

These registers are:

  • dedicated to Data Memory organization and protection ENDA i , I2CSS, RFAiSS, LOCK_CCFILE.
  • dedicated to fast transfer mode FTM
  • dedicated to observation, GPO, IT_TIME
  • dedicated to RF , RF_MNGT, EH_MODE
  • dedicated the device's structure LOCK_CFG
  • dedicated to I 2 C configuration, I2C_CFG

A set of additional registers allows to identify and customize the product (DSFID, AFI, IC_REF, etc.).

ST25DV64KC Electrical Characteristics

SymbolParameterTest conditionMin.Typ.Max.Unit
I LIInput leakage current (SCL, SDA)V IN = V SS or V CC device in Standby mode-0.03±0.1μA
I LIInput leakage current (LPD)V IN = V SS device in Standby mode-0.1±0.5μA
I LOOutput leakage current (SDA)SDA in Hi-Z, external voltage applied on SDA: V SS or V CC-0.03±0.1μA
I CC_E 2Operating Supply current (Device select E 2 Address) Read (1)V CC = 1.8 V, f C = 1MHz (rise/fall time < 50 ns)-116160μA
I CC_E 2Operating Supply current (Device select E 2 Address) Read (1)V CC = 3.3 V, f C = 1MHz (rise/fall time < 50 ns)-220240μA
I CC_E 2Operating Supply current (Device select E 2 Address) Read (1)V CC = 5.5 V, f C = 1MHz (rise/fall time < 50 ns)-510550μA
I CC_MBOperating Supply current (Device select MB Address) Read (1)V CC = 1.8 V, f C = 1MHz (rise/fall time < 50 ns)-116160μA
I CC_MBOperating Supply current (Device select MB Address) Read (1)V CC = 3.3 V, f C = 1MHz (rise/fall time < 50 ns)-220240μA
I CC_MBOperating Supply current (Device select MB Address) Read (1)V CC = 5.5 V, f C = 1MHz (rise/fall time < 50 ns)-510550μA
I CC0Operating Supply current (Device select E 2 Address) Write (1)V CC = 1.8 V, f C = 1MHz (rise/fall time < 50 ns)-110210μA
I CC0Operating Supply current (Device select E 2 Address) Write (1)V CC = 3.3 V, f C = 1MHz (rise/fall time < 50 ns)-110220μA
I CC0Operating Supply current (Device select E 2 Address) Write (1)V CC = 5.5 V, f C = 1MHz (rise/fall time < 50 ns)-130250μA
I CC0_MBOperating Supply current (Device select MB Address) Write (1)V CC = 1.8 V, f C = 1MHz (rise/fall time < 50 ns)-170200μA
I CC0_MBOperating Supply current (Device select MB Address) Write (1)V CC = 3.3 V, f C = 1MHz (rise/fall time < 50 ns)-280300μA
I CC0_MBOperating Supply current (Device select MB Address) Write (1)V CC = 5.5 V, f C = 1MHz (rise/fall time < 50 ns)-520600μA
I CC1 (LPD = 1)Low power down supply currentV CC = 1.8 V-0.841.5μA
I CC1 (LPD = 1)Low power down supply currentV CC = 3.3 V-1.32μA
I CC1 (LPD = 1)Low power down supply currentV CC = 5.5 V-1.73μA
I CC1_PON (LPD = 0)Static Standby supply current after power ON or device select stop or time outV CC = 1.8 V-72100μA
I CC1_PON (LPD = 0)Static Standby supply current after power ON or device select stop or time outV CC = 3.3 V-76100μA
I CC1_PON (LPD = 0)Static Standby supply current after power ON or device select stop or time outV CC = 5.5 V-87120μA
V ILInput low voltage (SDA, SCL)V CC = 1.8 V-0.45-0.25 V CCV
V ILInput low voltage (SDA, SCL)V CC = 3.3 V-0.45-0.3 V CCV
V ILInput low voltage (SDA, SCL)V CC = 5.5 V-0.45-0.3 V CCV
V IL_LPDInput low voltage (LPD)V CC = 3.3 V-0.45-0.2 V CCV

I2C DC and AC parameters

  • Symbol Parameter Test condition Min. Typ. Max. Unit
  • V CC = 1.8 V 0.75 V CC - V CC + 1
  • V IH Input high voltage (SDA, SCL) V CC = 3.3 V 0.75 V CC - V CC + 1 V
  • V CC = 5.5 V 0.75 V CC - V CC + 1
  • V CC = 1.8 V 0.85 V CC - V CC + 1
  • V IH_LPD Input high voltage (LPD) V CC = 3.3 V 0.85 V CC - V CC + 1 V
  • V CC = 5.5 V 0.85 V CC - V CC + 1
  • I OL = 1 mA, V CC = 1.8 V - 0.05 0.4
  • V OL_SDA Output low voltage SDA (1 MHz) I OL = 2.1 mA, V CC = 3.3 V - 0.075 0.4 V
  • I OL = 3 mA, V CC = 5.5 V - 0.09 0.4
  • V CC_Power_up Device Select Acknowledge f C = 100 KHz (2) - 1.48 1.7 V

Table 249. I 2 C DC characteristics up to 125 °C

SymbolParameterTest conditionMin.Typ.Max.Unit
I LIInput leakage current (SCL, SDA)V IN = V SS or V CC device in Standby mode-0.03±0.1μA
I LIInput leakage current (LPD)V IN = V SS device in Standby mode-0.1±0.5μA
I LOOutput leakage current (SDA)SDA in Hi-Z, external voltage applied on SDA: V SS or V CC-0.03±0.1μA
I CC _E 2Operating Supply current (Device select E 2 Address) Read (1)V CC = 1.8 V, f C = 1MHz (rise/fall time < 50 ns)-126180μA
I CC _E 2Operating Supply current (Device select E 2 Address) Read (1)V CC = 3.3 V, f C = 1MHz (rise/fall time < 50 ns)-230260μA
I CC _E 2Operating Supply current (Device select E 2 Address) Read (1)V CC = 5.5 V, f C = 1MHz (rise/fall time < 50 ns)-510550μA
I CC_MBOperating Supply current (Device select MB Address) Read (1)V CC = 1.8 V, f C = 1MHz (rise/fall time < 50 ns)-126180μA
I CC_MBOperating Supply current (Device select MB Address) Read (1)V CC = 3.3 V, f C = 1MHz (rise/fall time < 50 ns)-230260μA
I CC_MBOperating Supply current (Device select MB Address) Read (1)V CC = 5.5 V, f C = 1MHz (rise/fall time < 50 ns)-510550μA
I CC0Operating Supply current (Device select E 2 Address) Write (1)V CC = 1.8 V, f C = 1MHz (rise/fall time < 50 ns)-120220μA
I CC0Operating Supply current (Device select E 2 Address) Write (1)V CC = 3.3 V, f C = 1MHz (rise/fall time < 50 ns)-120230μA
I CC0Operating Supply current (Device select E 2 Address) Write (1)V CC = 5.5 V, f C = 1MHz (rise/fall time < 50 ns)-140260μA
I CC0_MBOperating Supply current (Device select MB Address) Write (1)V CC = 1.8 V, f C = 1MHz (rise/fall time < 50 ns)-180220μA

Table 249. I 2 C DC characteristics up to 125 °C

I2C DC and AC parameters

SymbolParameterTest conditionMin.Typ.Max.Unit
I CC0_MBOperating Supply current (Device select MB Address) Write (1)V CC = 3.3 V, f C = 1MHz (rise/fall time < 50 ns)-290320μA
I CC0_MBOperating Supply current (Device select MB Address) Write (1)V CC = 5.5 V, f C = 1MHz (rise/fall time < 50 ns)-520600μA
I CC1 (LPD = 1)Low power down supply currentV CC = 1.8 V-2.55μA
I CC1 (LPD = 1)Low power down supply currentV CC = 3.3 V-36μA
I CC1 (LPD = 1)Low power down supply currentV CC = 5.5 V-47μA
I CC1_PON (LPD = 0)Static Standby supply current after power ON or device select stop or time outV CC = 1.8 V-78110μA
I CC1_PON (LPD = 0)Static Standby supply current after power ON or device select stop or time outV CC = 3.3 V-82110μA
I CC1_PON (LPD = 0)Static Standby supply current after power ON or device select stop or time outV CC = 5.5 V-95130μA
V ILInput low voltage (SDA, SCL)V CC = 1.8 V-0.45-0.25 V CCV
V ILInput low voltage (SDA, SCL)V CC = 3.3 V-0.45-0.3 V CCV
V ILInput low voltage (SDA, SCL)V CC = 5.5 V-0.45-0.3 V CCV
V IL_LPDInput low voltage (LPD)V CC = 3.3 V-0.45-0.2 V CCV
V IHInput high voltage (SDA, SCL)V CC = 1.8 V0.75 V CC-V CC +1V
V IHInput high voltage (SDA, SCL)V CC = 3.3 V0.75 V CC-V CC +1V
V IHInput high voltage (SDA, SCL)V CC = 5.5 V0.75 V CC-V CC +1V
V IH_LPDInput high voltage (LPD)V CC = 1.8 V0.85 V CC +1-V CC +1V
V IH_LPDInput high voltage (LPD)V CC = 3.3 V0.85 V CC +1-V CC +1V
V IH_LPDInput high voltage (LPD)V CC = 5.5 V0.85 V CC +1-V CC +1V
V OL_SDAOutput low voltage SDA (1 MHz)I OL = 1 mA, V CC = 1.8 V-0.050.4V
V OL_SDAOutput low voltage SDA (1 MHz)I OL = 2.1 mA, V CC = 3.3 V-0.080.4V
V OL_SDAOutput low voltage SDA (1 MHz)I OL = 3 mA, V CC = 5.5 V-0.10.4V
V CC_Power_upDevice Select Acknowledgef C = 100 KHz (2)-1.481.7V

ST25DV64KC Thermal Information

Table 257. Thermal characteristics

SymbolParameterValueUnit
Ɵ JAThermal resistance junction-ambient SO8N 4.9 x 6 mm, 1.27 mm pitch package (1)219°C/W
Ɵ JAThermal resistance junction-ambient TSSOP8 3 x 6.4 mm, 0.65 mm pitch package (1) Thermal resistance junction-ambient255 67°C/W
  1. Jedec JESD51-7 2s2p board

  2. Exposed pad soldered to board

ST25DV64KC Package Information

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com . ECOPACK is an ST trademark.

Variants on the same datasheet

These parts have exact links to the same datasheet. They are candidates to compare, not verified drop-in replacements; check package, pinout and electrical limits.

Part NumberManufacturerPackage
ST25DV04KCSTMicroelectronicsTSSOP-8
ST25DV04KC-IESTMicroelectronicsSO8N
ST25DV04KC-IE6S3STMicroelectronics8-SOIC (0.154", 3.90mm Width)
ST25DV04KC-JFSTMicroelectronics—
ST25DV16KCSTMicroelectronics—

Other RF / Wireless

All RF / Wireless datasheetsAll STMicroelectronics datasheets (808)

Data on this page is extracted from publicly available manufacturer datasheets using automated tools including AI. It may contain errors or omissions. Always verify specifications against the official manufacturer datasheet before making design or purchasing decisions. See our Terms of Service. Rights holders can submit a takedown request.

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