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ST25DVXXKC

Dynamic NFC/RFID tag IC with 4-Kbit, 16-Kbit or 64-Kbit EEPROM, fast transfer mode capability and optimized I2C

Dynamic NFC/RFID Tag IC

The ST25DVXXKC is a dynamic nfc/rfid tag ic from STMicroelectronics. Dynamic NFC/RFID tag IC with 4-Kbit, 16-Kbit or 64-Kbit EEPROM, fast transfer mode capability and optimized I2C. View the full ST25DVXXKC datasheet below including key specifications, electrical characteristics.

Manufacturer

STMicroelectronics

Key Specifications

ParameterValue
Frequency13.56MHz
InterfaceI2C
Mounting TypeSurface Mount
Operating Temperature-40°C ~ 85°C
Package / Case8-SOIC (0.154\", 3.90mm Width)
StandardsISO 15693, NFC
Supplier Device Package8-SO
TypeRFID Transponder
Supply Voltage1.8V ~ 5.5V

Overview

Part: ST25DV04KC, ST25DV16KC, ST25DV64KC from STMicroelectronics

Type: Dynamic NFC/RFID Tag IC

Description: Dynamic NFC/RFID tag ICs with 4-Kbit, 16-Kbit, or 64-Kbit EEPROM, supporting I2C and ISO/IEC 15693 contactless interfaces, featuring fast transfer mode and energy harvesting.

Operating Conditions:

  • Supply voltage: 1.8 V to 5.5 V
  • Operating temperature: -40 to +125 °C (max 105 °C on RF interface for SO8N and TSSOP8)
  • I2C clock frequency: 1 MHz
  • RF fast read access: up to 53 kbit/s

Absolute Maximum Ratings:

  • Max supply voltage: null
  • Max continuous current: null
  • Max junction/storage temperature: 125 °C

Key Specs:

  • EEPROM memory size: 4-Kbit, 16-Kbit, or 64-Kbit (depending on version)
  • I2C interface speed: 1 MHz protocol
  • RF interface standard: ISO/IEC 15693, NFC Forum Type 5 tag certified
  • RF fast read access speed: up to 53 kbit/s
  • Internal tuning capacitance: 28.5 pF
  • I2C write time: typical 5 ms (for 1 to 16 bytes)
  • Data retention: 40 years
  • Write cycles endurance: 1 million at 25 °C, 400k at 125 °C
  • Fast transfer buffer size: 256 bytes

Features:

  • Two-wire I2C serial interface supports 1MHz protocol
  • ISO/IEC 15693 and NFC Forum Type 5 tag certified contactless interface
  • Fast data transfer mode with 256 bytes dedicated buffer
  • Energy harvesting analog output pin
  • Configurable GPO interruption pin
  • User memory and system configuration protection with passwords

Applications:

  • null

Package:

  • SO8N (8-pin)
  • TSSOP8 (8-pin)
  • UDFPN8 (8-pin)
  • UFDFPN12 (12-pin)

Features

I 2C interface

  • Two-wire I2C serial interface supports 1MHz protocol
  • Single supply voltage: 1.8 V to 5.5 V
  • Multiple byte write programming (up to 256 bytes)
  • Configurable I2C slave address

Contactless interface

  • Based on ISO/IEC 15693
  • NFC Forum Type 5 tag certified by the NFC Forum
  • Supports all ISO/IEC 15693 modulations, coding, sub-carrier modes and data rates
  • Custom fast read access up to 53 kbit/s
  • Single and multiple blocks read (same for Extended commands)
  • Single and multiple blocks write (up to four) (same for Extended commands)
  • Internal tuning capacitance: 28.5 pF

Electrical Characteristics

Test conditions specified in Table 245. I2C operating conditions
SymbolAlt.Parameter
fCfSCLClock frequency
tCHCLtHIGHClock pulse width high(1)
tCLCHtLOWClock pulse width low(1)
tSTARTOUT-I²C timeout on Start condition(1)
tXH1XH2tRInput signal rise time(1)
tXL1XL2tFInput signal fall time(1)
tDL1DL2tFSDA (out) fall time(1)
tDXCXtSU:DATData in set up time(1)
tCLDXtHD:DATData in hold time
tCLQXtDHData out hold time(5)
tCLQVtAAClock low to next data valid (access time)(6)
tCHDXtSU:STAStart condition set up time(7)
tDLCLtHD:STAStart condition hold time
tCHDHtSU:STOStop condition set up time
tDHDLtBUFTime between Stop condition and next Start
condition
tW-I²C write time (9)
tbootDC-RF OFF and LPD = 0(1)
tbootLPD-RF OFF(1)
  • 1. Evaluated by Characterization Not tested in production.
  • 2. tCHCL timeout.
  • 3. tCLCH timeout.
  • 4. There is no min. or max. values for the input signal rise and fall times. It is however recommended by the I 2C specification that the input signal rise and fall times be less than 120 ns when fC < 1 MHz.
  • 5. To avoid spurious Start and Stop conditions, a minimum delay is placed between SCL=1 and the falling or rising edge of SDA.
  • 6. tCLQV is the time (from the falling edge of SCL) required by the SDA bus line to reach 0.8VCC in a compatible way with the I2C specification (which specifies tSU:DAT (min) = 100 ns), assuming that the Rbus × Cbus time constant is less than 150 ns (as specified in the Figure 81. I2C Fast mode (fC = 1 MHz): maximum Rbus value versus bus parasitic capacitance (Cbus).
  • 7. For a reStart condition, or following a write cycle.
  • 8. tDLCL timeout
  • 9. I 2C write time for 1 Byte, up to 16 Bytes in EEPROM (user memory) provided they are all located in the same memory row, that is the most significant memory address bits (b16-b4) are the same.

DS13519 - Rev 2 page 145/200

Table 251. I 2C AC characteristics up to 125 °C

Test conditions specified in Table 245. I2C operating conditions
SymbolAlt.Parameter
fCfSCLClock frequency
tCHCLtHIGHClock pulse width high
tCLCHtLOWClock pulse width low
tSTARTOUT-I²C timeout on Start condition(3)
tXH1XH2tRInput signal rise time(3)
tXL1XL2tFInput signal fall time(3)
tDL1DL2tFSDA (out) fall time(3)
tDXCXtSU:DATData in set up time(3)
tCLDXtHD:DATData in hold time
tCLQXtDHData out hold time(5)
tCLQVtAAClock low to next data valid (access time)(6)
tCHDXtSU:STAStart condition set up time(7)
tDLCLtHD:STAStart condition hold time
tCHDHtSU:STOStop condition set up time
tDHDLTime between Stop condition and next Start
tBUF
1400
condition
tW-I²C write time (9)
tbootDC-RF OFF and LPD = 0(3)
tbootLPD-RF OFF(3)

DS13519 - Rev 2 page 146/200

SDA Out

Figure 80. I 2C AC waveforms

Figure 81 indicates how the value of the pull-up resistor can be calculated. In most applications, though, this method of synchronization is not employed, and so the pull-up resistor is not necessary, provided that the bus master has a push-pull (rather than open drain) output.

Data valid

Figure 81. I 2C Fast mode (fC = 1 MHz): maximum Rbus value versus bus parasitic capacitance (Cbus)

Data valid

DS13519 - Rev 2 page 147/200

Thermal Information

Table 257. Thermal characteristics

SymbolParameterValueUnit
Thermal resistance junction-ambient
SO8N 4.9 x 6 mm, 1.27 mm pitch package(1)
Thermal resistance junction-ambient
219
ƟJATSSOP8 3 x 6.4 mm, 0.65 mm pitch package(1)255°C/W
Thermal resistance junction-ambient
UFDFN8 2 × 3 mm, 0.5 mm pitch package(1)(2)
67

DS13519 - Rev 2 page 150/200

Package Information

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark.

Related Variants

The following components are covered by the same datasheet.

Part NumberManufacturerPackage
ST25DV04KCSTMicroelectronics
ST25DV04KC-IESTMicroelectronics
ST25DV04KC-IE6S3STMicroelectronics8-SOIC (0.154", 3.90mm Width)
ST25DV04KC-JFSTMicroelectronics
ST25DV16KCSTMicroelectronics
ST25DV64KCSTMicroelectronics
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