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SMBJ48CA

Bidirectional TVS Diode

The SMBJ48CA is a bidirectional tvs diode from Eaton Electronics. View the full SMBJ48CA datasheet below including key specifications, electrical characteristics.

Official SMBJ48CA datasheet (PDF) — the source this page was extracted from.

Manufacturer

Eaton Electronics

Category

Diodes

Package

DO-214AA

SMBJ48CA Key Specifications

ParameterValue
PackagingMouseReel
Standard Pack Qty6000
PolarityBidirectional
Part MarkingCX
Test Current (IT)1.0 mA
Voltage Tolerance5%
Storage Temperature Range-55 to +175 °C
Breakdown Voltage (VBR) Max58.9 V
Breakdown Voltage (VBR) Min53.3 V
Operating Temperature Range-55 to +150 °C
Response Time (Bidirectional)< 5.0 ns
Maximum Reverse Leakage @ VRWM5.0 µA
Package Dimensions (Body L X W)4.06-4.57 mm x 3.30-3.94 mm
Peak Forward Surge Current (IFSM)100 A
Peak Pulse Power Dissipation (1 Ms)600 W
Working Peak Reverse Voltage (VRWM)48 V
Maximum Reverse Surge Current (IRSM)7.7 A
Maximum Reverse (Clamping) Voltage (VRSM)77.4 V
Steady State Power Dissipation (TL=75°C)5.0 W

SMBJ48CA Overview

Part: SMBJ Transient Voltage Suppressor Diode Series — Bourns

Type: Transient Voltage Suppressor Diode

Description: 600 W peak pulse power, 5–495 V working peak reverse voltage TVS diode series in a compact SMB (DO-214AA) surface mount package, offering surge and ESD protection.

Operating Conditions:

  • Working Peak Reverse Voltage: 5 V to 495 V
  • Operating temperature: -55 to +150 °C
  • Response time: less than 1.0 ns (unidirectional), less than 5.0 ns (bidirectional)

Absolute Maximum Ratings:

  • Max Working Peak Reverse Voltage: 495 V
  • Max Peak Forward Surge Current: 100 Amps (8.3 ms Single Half Sine Wave)
  • Max junction temperature: +150 °C
  • Max storage temperature: +175 °C

Key Specs:

  • Minimum Peak Pulse Power Dissipation (T_P = 1 ms): 600 Watts
  • Peak Forward Surge Current (8.3 ms Single Half Sine Wave): 100 Amps
  • Steady State Power Dissipation (@TL= 75 °C): 5.0 Watts
  • Working Peak Reverse Voltage (V_RWM): 5 V to 495 V
  • Breakdown Voltage (V_BR) Min: 6.40 V to 522 V (@I_T = 1.0 mA or 10 mA)
  • Maximum Reverse Leakage (I_R @V_RWM): 1.0 μA to 800 μA
  • Maximum Instantaneous Forward Voltage (@I_PP = 50 A, Unidirectional): 3.5 V (for SMBJ5.0A-SMBJ90A), 5.0 V (for SMBJ100A-SMBJ495A)

Features:

  • RoHS compliant
  • Surface Mount SMB package
  • Standoff Voltage: 5 to 495 volts
  • Power Dissipation: 600 watts

Applications:

  • IEC 61000-4-2 ESD (Min. Level 4)
  • IEC 61000-4-4 EFT
  • IEC 61000-4-5 Surge

Package:

  • SMB (DO-214AA)

SMBJ48CA Features

  • ■ RoHS compliant*
  • ■ Surface Mount SMB package
  • ■ Standoff Voltage: 5 to 495 volts
  • ■ Power Dissipation: 600 watts

SMBJ48CA Applications

  • ■ IEC 61000-4-2 ESD (Min. Level 4)
  • ■ IEC 61000-4-4 EFT
  • ■ IEC 61000-4-5 Surge

SMBJ48CA Electrical Characteristics

ParameterSymbolValueUnit
Minimum Peak Pulse Power Dissipation (T P = 1 ms) (Note 1,2)P PK600Watts
Peak Forward Surge Current 8.3 ms Single Half Sine Wave Superimposed on Rated Load (JEDEC Method) (Note 3)I FSM100Amps
Steady State Power Dissipation @TL= 75 °CP M(AV)5.0Watts
Maximum Instantaneous Forward Voltage @I PP = 50 A (For Unidirectional Units Only)V F(Note 5)Volts
Operating Temperature RangeT J-55 to +150°C
Storage Temperature RangeT STG-55 to +175°C
  1. Non-repetitive current pulse, per Pulse Waveform graph and derated above T A = 25 °C per Pulse Derating Curve.
  2. Thermal Resistance Junction to Lead.
  3. 8.3 ms Single Half-Sine Wave duty cycle = 4 pulses maximum per minute (unidirectional units only).
  4. Single Phase, Half Wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20 %.
  5. V F = 3.5 V on SMBJ5.0A through SMBJ90A and V F = 5.0 V on SMBJ100A through SMBJ495A.

Variants on the same datasheet

These parts have exact links to the same datasheet. They are candidates to compare, not verified drop-in replacements; check package, pinout and electrical limits.

Part NumberManufacturerPackage
SMBJ48AEaton ElectronicsSMB (DO-214AA)

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  • VMNN110CMS-TR – Stanley Electric, Infrared Emitting Diode
  • ESD5Z2.5T1G – onsemi, ESD Protection TVS Diode
  • PMEG4010CEJ – Nexperia, Schottky Barrier Rectifier
  • BAT54S – Diotec Semiconductor, Dual Schottky Barrier Diode (Series)

All Diodes datasheets

Data on this page is extracted from publicly available manufacturer datasheets using automated tools including AI. It may contain errors or omissions. Always verify specifications against the official manufacturer datasheet before making design or purchasing decisions. See our Terms of Service. Rights holders can submit a takedown request.

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