SI8261BBC-AP
Isolated Gate DriverThe SI8261BBC-AP is a isolated gate driver from Silicon Labs. View the full SI8261BBC-AP datasheet below including key specifications, electrical characteristics.
SI8261BBC-AP shares its datasheet with SI8261BCC-C-IS, whose page lists every part number it covers.
Official SI8261BBC-AP datasheet (PDF) — the source this page was extracted from.
Manufacturer
Silicon LabsCategory
OptocouplersSI8261BBC-AP Key Specifications
| Parameter | Value |
|---|---|
| Qualification | AEC-Q100 |
| UVLO Threshold | 8V option |
| Isolation Rating | 3.75 kVrms |
| Propagation Delay | 60ns |
| Supply Voltage (VDD) | 6.5V to 30V |
| Operating Temperature | -40°C to +125°C |
| Input Current (IF(ON)) | 6mA to 30mA |
| Peak Output Current (Sink) | 4.0A typical |
| Output Resistance Low (Sink) | 0.8Ω typical |
| Peak Output Current (Source) | 1.8A typical (4.0A driver variant) |
| Common-Mode Transient Immunity | >50 kV/μs typical |
| Output Resistance High (Source) | 2.6Ω typical |
| Input Current Threshold (IF(TH)) | 3.6mA max |
| Supply Current (Output High, VDD=15V) | 1.8mA typical, 2.4mA max |
SI8261BBC-AP Overview
Part: Si826x family (e.g., SI8261BCC-C-IS) — Silicon Laboratories
Type: Isolated Gate Driver (LED emulator input)
Description: 5 kV RMS isolated gate driver with LED-emulator input, up to 4.0 A peak output drive, 6.5–30 V VDD, and 60 ns max propagation delay.
Operating Conditions:
- Supply voltage (VDD): 6.5–30 V
- Operating temperature (ambient): -40 to +125 °C
- Input current IF(ON): 6–30 mA
Absolute Maximum Ratings:
- The Absolute Maximum Ratings table is not included in the provided text; only IEC safety limiting values are given (case temperature TS 140 °C, output power PS 1 W)
Key Specs:
- Supply current, output high (IF = 10 mA): 1.8 mA typ / 2.4 mA max at VDD = 15 V; 2.0 mA typ / 2.7 mA max at VDD = 30 V
- Input current threshold IF(TH): 3.6 mA max; hysteresis 0.34 mA typ
- Input forward voltage (ON): 1.6–2.8 V
- Si826xBxx peak source current: 1.8 A typ (0.5 A min); peak sink current: 4.0 A typ (1.2 A min)
- Si826xBxx output resistance: ROH 2.6 Ω typ (5.1 Ω max) at IOH = -1 A; ROL 0.8 Ω typ (2.0 Ω max) at IOL = 2 A
- Propagation delay (CL = 200 pF): tPLH 20–60 ns; tPHL 10–50 ns; pulse width distortion 28 ns max
- Rise/fall time (CL = 200 pF): 5.5 ns / 8.5 ns typ
- CMTI: 35 kV/μs min, 50 kV/μs typ (VCM = 1500 V)
- UVLO thresholds (rising): 5.6 V typ (A option), 8.4 V typ (B option), 12 V typ (C option)
Features:
- Pin-compatible, drop-in upgrade for popular opto-coupled gate drivers
- Low-power diode emulator input
- 0.6 A and 4.0 A peak output drive options, rail-to-rail output
- Up to 5000 V RMS isolation; 10 kV surge capability
- Multiple UVLO options (5, 8, 12 V) with hysteresis
- AEC-Q100 qualified; automotive-grade OPNs available
- UL 1577, CSA 5A, VDE 0884-10, CQC approvals
Applications:
- IGBT/MOSFET gate drives
- Industrial, HEV and renewable energy inverters
- AC, brushless and DC motor controls and drives
- Variable speed motor control in consumer white goods
- Isolated switch mode and UPS power supplies
Package:
- SOIC-8 (narrow body)
- DIP8 (gull-wing)
- SDIP6 (stretched SO-6)
SI8261BBC-AP Features
- Pin-compatible, drop-in upgrades for popular high speed opto-coupled gate drivers
- Low power diode emulator simplifies design-in process
- 0.6 and 4.0 Amp peak output drive current
- Rail-to-rail output voltage
- Performance and reliability advantages vs. opto-drivers
- Resistant to temperature and age
- 10x lower FIT rate for longer service life
- 14x tighter part-to-part matching
- Higher common-mode transient immunity: >50 kV/μs typical
- Robust protection features
- Multiple UVLO ordering options (5, 8, and 12 V) with hysteresis
SI8261BBC-AP Applications
- IGBT/ MOSFET gate drives
- Industrial, HEV and renewable energy inverters
- AC, Brushless, and DC motor controls and drives
SI8261BBC-AP Pin Configuration
Figure 17. Pin Configuration
Table 11. Pin Descriptions (SOIC-8, DIP8)
| Pin | Name | Description |
|---|---|---|
| 1 | NC* | No connect. |
| 2 | ANODE | Anode of LED emulator. V O follows the signal applied to this input with respect to the CATHODE input. |
| 3 | CATHODE | Cathode of LED emulator. V O follows the signal applied to ANODE with respect to this input. |
| 4 | NC* | No connect. |
| 5 | GND | External MOSFETsourceconnection and ground reference forV DD . This terminal is typically connected to ground but may be tied to a negative or positive voltage. |
| 6 | V O | Output signal. Both V O pins are required to be shorted together for 4.0 A compliance. |
| 7 | V O | Output signal. Both V O pins are required to be shorted together for 4.0 A compliance. |
| 8 | V DD | Output-side power supply input referenced to GND (30 V max). |
*Note: No Connect. These pins are not internally connected. To maximize CMTI performance, these pins should be connected to the ground plane.
Table 11. Pin Descriptions (SOIC-8, DIP8)
SI8261BBC-AP Electrical Characteristics
Table 1. Recommended Operating Conditions
| Parameter | Symbol | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| Supply Voltage | V DD | 6.5 | - | 30 | V |
| Input Current | I F(ON) (see Figure 1) | 6 | - | 30 | mA |
| Operating Temperature (Ambient) | T A | -40 | - | 125 | °C |
SI8261BBC-AP Package Information
Figure 19 illustrates the package details for the Si826x in an 8- pin narrow-body SOIC pack age. Table 15 lists the values for the dimensions shown in the illustration.
Figure 19. 8-Pin Narrow Body SOIC Package Table 15. 8-Pin Narrow Body SOIC Package Diagram Dimensions
| Symbol | Millimeters - Min | Millimeters - Max |
|---|---|---|
| A | 1.35 | 1.75 |
| A1 | 0.10 | 0.25 |
| A2 | 1.40 REF | 1.55 REF |
| B | 0.33 | 0.51 |
| C | 0.19 | 0.25 |
| D | 4.80 | 5.00 |
| E | 3.80 | 4.00 |
| e | 1.27 BSC | 1.27 BSC |
| H | 5.80 | 6.20 |
| h | 0.25 | 0.50 |
| L | 0.40 | 1.27 |
| 0 | 8 |
Figure 19. 8-Pin Narrow Body SOIC Package Table 15. 8-Pin Narrow Body SOIC Package Diagram Dimensions
Variants on the same datasheet
These parts have exact links to the same datasheet. They are candidates to compare, not verified drop-in replacements; check package, pinout and electrical limits.
| Part Number | Manufacturer | Package |
|---|---|---|
| SI8261AAC-C-IP | Silicon Labs | DIP-8 |
| SI8261AAC-C-IS | Skyworks Solutions | 8-SOIC (0.154", 3.90mm Width) |
| SI8261AAD-C-IS | Silicon Labs | SDIP-6 |
| SI8261ABC-C-IP | Silicon Labs | DIP-8 |
| SI8261ABC-C-IS | Silicon Labs | SOIC-8 |
| SI8261ABD-C-IS | Silicon Labs | SDIP-6 |
| SI8261ACC-C-IP | Silicon Labs | — |
| SI8261ACC-C-IS | Silicon Labs | SOIC-8 |
| SI8261ACD-C-IS | Skyworks Solutions | 6-SOIC (0.295", 7.50mm Width) |
| SI8261BAC-C-IP | Silicon Labs | DIP-8 |
| SI8261BAC-C-IS | Skyworks Solutions | 8-SOIC (0.154", 3.90mm Width) |
| SI8261BAD-C-IS | Skyworks Solutions | 6-SOIC (0.295", 7.50mm Width) |
| SI8261BBC-AS | Silicon Labs | SOIC-8 |
| SI8261BBC-C-IP | Silicon Labs | — |
| SI8261BBC-C-IS | Skyworks Solutions | 8-SOIC (0.154", 3.90mm Width) |
| SI8261BBD-C-IS | Silicon Labs | SDIP-6 |
| SI8261BCC-AS | Silicon Labs | SOIC-8 |
| SI8261BCC-C-IP | Silicon Labs | DIP-8 |
| SI8261BCC-C-IS | Silicon Labs | SOIC-8 (Narrow body) |
| SI8261BCD-AS | Silicon Labs | SDIP-6 |
| SI8261BCD-C-IS | Skyworks Solutions | 6-SOIC (0.295", 7.50mm Width) |
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All Optocouplers datasheetsAll Silicon Labs datasheets (179)
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