EL357NA

Phototransistor Photocoupler

The EL357NA is a phototransistor photocoupler from Everlight. View the full EL357NA datasheet below including key specifications, absolute maximum ratings.

EL357NA shares its datasheet with EL357N, whose page lists every part number it covers.

Official EL357NA datasheet (PDF) — the source this page was extracted from.

Manufacturer

Everlight

EL357NA Key Specifications

Parameter	Value
Fall Time	18 us max
Rise Time	18 us max
Storage Temperature	-55 to +125 °C
Floating Capacitance	1.0 pF max
Forward Current (IF)	50 mA max
Forward Voltage (VF)	1.2 V typ, 1.4 V max at IF=20mA
Isolation Resistance	5x10^10 ohm min
Reverse Voltage (VR)	6 V
Operating Temperature	-55 to +110 °C
Collector Current (IC)	50 mA max
Package Profile Height	2.0 mm
Total Power Dissipation	200 mW
Isolation Voltage (Viso)	3750 Vrms
Peak Forward Current (IFP)	1 A (1us pulse)
Collector-Emitter Dark Current	100 nA max at VCE=20V
Collector-Emitter Voltage (VCEO)	80 V
Current Transfer Ratio (EL357NA)	50% to 160% (typ. 80%) at IF=5mA, VCE=5V
Emitter-Collector Voltage (VECO)	7 V
Collector-Emitter Saturation Voltage	0.2 V max at IF=20mA, IC=1mA

EL357NA Overview

Part: EL357N-G Series — Everlight

Type: Phototransistor Photocoupler

Description: A 4-pin small outline SMD phototransistor photocoupler featuring an infrared emitting diode optically coupled to a phototransistor, offering a current transfer ratio of 50-600% at IF=5mA, VCE=5V, and a high isolation voltage of 3750 V rms.

Operating Conditions:

Operating temperature: -55 to +110 °C
Current Transfer Ratio (CTR): 50–600% (at IF = 5mA, VCE = 5V)
Isolation voltage: 3750 V rms

Absolute Maximum Ratings:

Max forward current: 50 mA
Max collector current: 50 mA
Max collector-emitter voltage: 80 V
Max reverse voltage: 6 V
Max total power dissipation: 200 mW
Max storage temperature: +125 °C

Key Specs:

Forward voltage (VF): 1.4 V (max, at IF = 20mA)
Reverse current (IR): 10 μA (max, at VR = 4V)
Collector-Emitter dark current (ICEO): 100 nA (max, at VCE = 20V, IF = 0mA)
Collector-Emitter breakdown voltage (BVCEO): 80 V (min, at IC = 0.1mA)
Collector-Emitter saturation voltage (VCE(sat)): 0.2 V (max, at IF = 20mA, IC = 1mA)
Isolation resistance (RIO): 5×10^10 Ω (min, at VIO = 500Vdc, 40-60% R.H.)
Rise time (tr): 18 μs (max, at VCE = 2V, IC = 2mA, RL = 100Ω)
Fall time (tf): 18 μs (max, at VCE = 2V, IC = 2mA, RL = 100Ω)

Features:

Halogens free (Br <900 ppm, Cl <900 ppm, Br+Cl < 1500 ppm)
Current transfer ratio (CTR: 50~600% at IF =5mA, VCE =5V)
High isolation voltage between input and output (Viso=3750 V rms)
Compact 4 Pin SOP with a 2.0 mm profile
Compliance with EU REACH
Pb free and RoHS compliant
UL and cUL approved (No. E214129)
VDE approved (No. 132249)

Applications:

DC-DC Converters
Programmable controllers
Telecommunication equipments
Signal transmission between circuits of different potentials and impedances

Package:

4 Pin SOP

EL357NA Features

Halogens free (Br <900 ppm ,Cl <900 ppm , Br+Cl < 1500 ppm)
Current transfer ratio

(CTR: 50~600% at IF =5mA, VCE =5V)

High isolation voltage between input and output (Viso=3750 V rms )
Compact 4 Pin SOP with a 2.0 mm profile
Compliance with EU REACH
Pb free and RoHS compliant
UL and cUL approved (No. E214129)
VDE approved (No. 132249)
SEMKO approved
NEMKO approved
DEMKO approved
FIMKO approved

EL357NA Applications

DC-DC Converters
Programmable controllers
Telecommunication equipments
Signal transmission between circuits of different potentials and impedances

EL357NA Absolute Maximum Ratings

	Parameter	Symbol	Rating	Unit
	Forward current	I F	50	mA
	Peak forward current (1us, pulse)	I FP	1	A
	Reverse voltage	V R	6	V
	Power dissipation Derating factor (about Ta=100°C)	P D	70	mW
		P D	2.9	mW/C
	Power dissipation Derating factor (above T a = 70 °	P C	150	mW
	C)	P C	3.7	mW/°C
Output	Collector current	I C	50	mA
Output	Collector-Emitter voltage	V CEO	80	V
	Emitter-Collector voltage	V ECO	7	V
Total Power Dissipation	Total Power Dissipation	P TOT	200	mW
Isolation Voltage* 1	Isolation Voltage* 1	V ISO	3750	V rms
Operating temperature	Operating temperature	T OPR	-55 ~ +110	°C
Storage temperature	Storage temperature	T STG	-55 ~ +125	°C
Soldering Temperature*2	Soldering Temperature*2	T SOL	260	°C

Variants on the same datasheet

These parts have exact links to the same datasheet. They are candidates to compare, not verified drop-in replacements; check package, pinout and electrical limits.

Part Number	Manufacturer	Package
EL357N	Everlight	SOP-4
EL357N-G	Everlight	4 Pin SOP
EL357NB	Everlight	SOP-4
EL357NC	Everlight	SOP-4
EL357ND	Everlight	—
EL357NE	Everlight	SOP-4
EL357NF	Everlight	SOP-4

Other Optocouplers

EL357N – Everlight, Phototransistor Photocoupler
EL357N-G-TA – Everlight, Phototransistor Optocoupler
EL357NB – Everlight, Phototransistor Photocoupler
EL357NC – Everlight, Phototransistor Photocoupler
EL357ND – Everlight, Phototransistor Photocoupler
EL357NE – Everlight, Phototransistor Photocoupler
EL357NF – Everlight, Phototransistor Photocoupler
FOD814 – onsemi, Phototransistor Optocoupler

All Optocouplers datasheets All Everlight datasheets (11)

Data on this page is extracted from publicly available manufacturer datasheets using automated tools including AI. It may contain errors or omissions. Always verify specifications against the official manufacturer datasheet before making design or purchasing decisions. See our Terms of Service. Rights holders can submit a takedown request.

Ask your AI agent about the EL357NA

Connect SheetsData to Claude, Cursor, Codex or any MCP client and your agent reads this datasheet for you: pinout, limits, register maps and design checks, with the numbers taken from the PDF.

claude mcp add --transport http sheetsdata https://mcp.sheetsdata.com/mcp

Then ask: "Can the EL357NA run from my 12 V rail? Check it against the datasheet limits."

Create a free account $2 of usage every month, no card needed.