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EL357N-G-TA

Phototransistor Optocoupler

The EL357N-G-TA is a phototransistor optocoupler from Everlight. View the full EL357N-G-TA datasheet below including key specifications, absolute maximum ratings.

Official EL357N-G-TA datasheet (PDF) — the source this page was extracted from.

Manufacturer

Everlight

Category

Optocouplers

Package

SOP-4

EL357N-G-TA Key Specifications

ParameterValue
Fall Time4 µs typ, 18 µs max
Rise Time3 µs typ, 18 µs max
Forward Voltage1.2V typ, 1.4V max (IF=20mA)
Cut-Off Frequency80 kHz typ
Isolation Voltage3750 Vrms
Storage Temperature-55°C to +125°C
Forward Current (Max)50 mA
Operating Temperature-55°C to +110°C
Collector Current (Max)50 mA
Packing Quantity (TA Reel)3000 units per reel
Collector-Emitter Voltage (VCEO)80V
Collector-Emitter Saturation Voltage0.1V typ, 0.2V max
Current Transfer Ratio (EL357N, IF=5mA, VCE=5V)50% to 600%

EL357N-G-TA Overview

Part: EL357N-G Series — EVERLIGHT

Type: Optocoupler (Infrared Emitting Diode optically coupled to a Phototransistor)

Description: A compact 4-pin SOP optocoupler featuring a current transfer ratio (CTR) of 50–600% at I_F = 5mA, V_CE = 5V, and a high isolation voltage of 3750 V_rms.

Operating Conditions:

  • Collector-Emitter voltage: up to 80 V
  • Operating temperature: -55 to +110 °C
  • Current Transfer Ratio: 50–600% (at I_F = 5mA, V_CE = 5V)

Absolute Maximum Ratings:

  • Max forward current: 50 mA
  • Max collector current: 50 mA
  • Max reverse voltage: 6 V
  • Max collector-emitter voltage: 80 V
  • Max emitter-collector voltage: 7 V
  • Max total power dissipation: 200 mW
  • Max isolation voltage: 3750 V_rms
  • Max storage temperature: +125 °C

Key Specs:

  • Forward voltage (V_F): 1.2 V (Typ.) at I_F = 20mA
  • Reverse current (I_R): 10 μA (Max.) at V_R = 4V
  • Collector-Emitter dark current (I_CEO): 100 nA (Max.) at V_CE = 20V, I_F = 0mA
  • Collector-Emitter breakdown voltage (BV_CEO): 80 V (Min.) at I_C = 0.1mA
  • Collector-Emitter saturation voltage (V_CE(sat)): 0.1 V (Typ.) at I_F = 20mA, I_C = 1mA
  • Isolation resistance (R_IO): 5×10^10 Ω (Min.) at V_IO = 500Vdc
  • Floating capacitance (C_IO): 0.6 pF (Typ.) at V_IO = 0, f = 1MHz
  • Cut-off frequency (f_c): 80 kHz (Typ.) at V_CE = 5V, I_C = 2mA, R_L = 100 Ω

Features:

  • Halogens free
  • Current transfer ratio (CTR: 50~600% at I_F =5mA, V_CE =5V)
  • High isolation voltage between input and output (V_iso=3750 V_rms)
  • Compact 4 Pin SOP with a 2.0 mm profile
  • Pb free and RoHS compliant
  • UL approved
  • VDE approved
  • SEMKO approved
  • NEMKO approved
  • DEMKO approved
  • FIMKO approved
  • CSA approved

Applications:

  • DC-DC Converters
  • Programmable controllers
  • Telecommunication equipments
  • Signal transmission between circuits of different potentials and impedances

Package:

  • 4-pin Small Outline SMD Package (SOP)

EL357N-G-TA Features

  • Halogens free
  • Current transfer ratio

(CTR: 50~600% at IF =5mA, VCE =5V)

  • High isolation voltage between input and output (Viso=3750 V rms )
  • Compact 4 Pin SOP with a 2.0 mm profile
  • Pb free and RoHS compliant.
  • UL approved (No. E214129)
  • VDE approved (No. 132249)
  • SEMKO approved
  • NEMKO approved
  • DEMKO approved
  • FIMKO approved
  • CSA approved (No. 1408633)

EL357N-G-TA Applications

  • DC-DC Converters
  • Programmable controllers
  • Telecommunication equipments
  • Signal transmission between circuits of different potentials and impedances

EL357N-G-TA Pin Configuration

  1. Anode
  2. Cathode
  3. Emitter
  4. Collector

EL357N-G-TA Absolute Maximum Ratings

ParameterParameterSymbolRatingUnit
Forward currentI F50mA
Peak forward current (1us, pulse)I FP1A
Reverse voltageV R6V
Power dissipationP D70mW
Derating factor (about Ta=100 °C)P D2.9mW/°C
Power dissipation Derating factor (about Ta=80 °C)P C150mW
P C3.7mW/°C
Collector currentI C50mA
Collector-Emitter voltageV CEO80V
Emitter-Collector voltageV ECO7V
Total power dissipationTotal power dissipationP TOT200mW
Isolation voltage *1Isolation voltage *1V ISO3750V rms
Operating temperatureOperating temperatureT OPR-55 ~ +110°C
Storage temperatureStorage temperatureT STG-55 ~ +125°C
Soldering temperature *2Soldering temperature *2T SOL260°C

EL357N-G-TA Package Information

(Dimensions in mm)

Recommended pad layout for surface mount leadform

Other Optocouplers

  • EL357N – Everlight, Phototransistor Photocoupler
  • EL357NA – Everlight, Phototransistor Photocoupler
  • EL357NB – Everlight, Phototransistor Photocoupler
  • EL357NC – Everlight, Phototransistor Photocoupler
  • EL357ND – Everlight, Phototransistor Photocoupler
  • EL357NE – Everlight, Phototransistor Photocoupler
  • EL357NF – Everlight, Phototransistor Photocoupler
  • FOD814 – onsemi, Phototransistor Optocoupler

All Optocouplers datasheetsAll Everlight datasheets (11)

Data on this page is extracted from publicly available manufacturer datasheets using automated tools including AI. It may contain errors or omissions. Always verify specifications against the official manufacturer datasheet before making design or purchasing decisions. See our Terms of Service. Rights holders can submit a takedown request.

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