EL357NB
Phototransistor PhotocouplerThe EL357NB is a phototransistor photocoupler from Everlight. View the full EL357NB datasheet below including key specifications, absolute maximum ratings.
EL357NB shares its datasheet with EL357N, whose page lists every part number it covers.
Official EL357NB datasheet (PDF) — the source this page was extracted from.
EL357NB Key Specifications
| Parameter | Value |
|---|---|
| Fall Time | 18 us max (4 us typ) |
| Rise Time | 18 us max (3 us typ) |
| Package Height | 2.0 mm profile |
| Forward Voltage | 1.2V typ, 1.4V max at IF=20mA |
| Isolation Voltage | 3750 Vrms |
| Number Of Channels | 1 |
| Storage Temperature | -55 °C to +125 °C |
| Floating Capacitance | 0.6 pF typ, 1.0 pF max |
| Isolation Resistance | 5x10^10 Ohm min |
| Peak Forward Current | 1 A (1 us pulse) |
| Forward Current (Max) | 50 mA |
| Operating Temperature | -55 °C to +110 °C |
| Reverse Voltage (Max) | 6 V |
| Soldering Temperature | 260 °C for 10 s |
| Collector Current (Max) | 50 mA |
| Total Power Dissipation | 200 mW |
| Current Transfer Ratio (CTR) | 50% to 260% (130% typ) at IF=5mA, VCE=5V |
| Collector-Emitter Dark Current | 100 nA max at VCE=20V |
| Collector-Emitter Voltage (VCEO) | 80 V |
| Emitter-Collector Voltage (VECO) | 7 V |
| Collector-Emitter Saturation Voltage | 0.2V max at IF=20mA, IC=1mA |
EL357NB Overview
Part: EL357N-G Series — Everlight
Type: Phototransistor Photocoupler
Description: A 4-pin small outline SMD phototransistor photocoupler featuring an infrared emitting diode optically coupled to a phototransistor, offering a current transfer ratio of 50-600% at IF=5mA, VCE=5V, and a high isolation voltage of 3750 V rms.
Operating Conditions:
- Operating temperature: -55 to +110 °C
- Current Transfer Ratio (CTR): 50–600% (at IF = 5mA, VCE = 5V)
- Isolation voltage: 3750 V rms
Absolute Maximum Ratings:
- Max forward current: 50 mA
- Max collector current: 50 mA
- Max collector-emitter voltage: 80 V
- Max reverse voltage: 6 V
- Max total power dissipation: 200 mW
- Max storage temperature: +125 °C
Key Specs:
- Forward voltage (VF): 1.4 V (max, at IF = 20mA)
- Reverse current (IR): 10 μA (max, at VR = 4V)
- Collector-Emitter dark current (ICEO): 100 nA (max, at VCE = 20V, IF = 0mA)
- Collector-Emitter breakdown voltage (BVCEO): 80 V (min, at IC = 0.1mA)
- Collector-Emitter saturation voltage (VCE(sat)): 0.2 V (max, at IF = 20mA, IC = 1mA)
- Isolation resistance (RIO): 5×10^10 Ω (min, at VIO = 500Vdc, 40-60% R.H.)
- Rise time (tr): 18 μs (max, at VCE = 2V, IC = 2mA, RL = 100Ω)
- Fall time (tf): 18 μs (max, at VCE = 2V, IC = 2mA, RL = 100Ω)
Features:
- Halogens free (Br <900 ppm, Cl <900 ppm, Br+Cl < 1500 ppm)
- Current transfer ratio (CTR: 50~600% at IF =5mA, VCE =5V)
- High isolation voltage between input and output (Viso=3750 V rms)
- Compact 4 Pin SOP with a 2.0 mm profile
- Compliance with EU REACH
- Pb free and RoHS compliant
- UL and cUL approved (No. E214129)
- VDE approved (No. 132249)
Applications:
- DC-DC Converters
- Programmable controllers
- Telecommunication equipments
- Signal transmission between circuits of different potentials and impedances
Package:
- 4 Pin SOP
EL357NB Features
- Halogens free (Br <900 ppm ,Cl <900 ppm , Br+Cl < 1500 ppm)
- Current transfer ratio
(CTR: 50~600% at IF =5mA, VCE =5V)
- High isolation voltage between input and output (Viso=3750 V rms )
- Compact 4 Pin SOP with a 2.0 mm profile
- Compliance with EU REACH
- Pb free and RoHS compliant
- UL and cUL approved (No. E214129)
- VDE approved (No. 132249)
- SEMKO approved
- NEMKO approved
- DEMKO approved
- FIMKO approved
EL357NB Applications
- DC-DC Converters
- Programmable controllers
- Telecommunication equipments
- Signal transmission between circuits of different potentials and impedances
EL357NB Absolute Maximum Ratings
| Parameter | Symbol | Rating | Unit | |
|---|---|---|---|---|
| Forward current | I F | 50 | mA | |
| Peak forward current (1us, pulse) | I FP | 1 | A | |
| Reverse voltage | V R | 6 | V | |
| Power dissipation Derating factor (about Ta=100°C) | P D | 70 | mW | |
| P D | 2.9 | mW/C | ||
| Power dissipation Derating factor (above T a = 70 ° | P C | 150 | mW | |
| C) | P C | 3.7 | mW/°C | |
| Output | Collector current | I C | 50 | mA |
| Output | Collector-Emitter voltage | V CEO | 80 | V |
| Emitter-Collector voltage | V ECO | 7 | V | |
| Total Power Dissipation | Total Power Dissipation | P TOT | 200 | mW |
| Isolation Voltage* 1 | Isolation Voltage* 1 | V ISO | 3750 | V rms |
| Operating temperature | Operating temperature | T OPR | -55 ~ +110 | °C |
| Storage temperature | Storage temperature | T STG | -55 ~ +125 | °C |
| Soldering Temperature*2 | Soldering Temperature*2 | T SOL | 260 | °C |
Variants on the same datasheet
These parts have exact links to the same datasheet. They are candidates to compare, not verified drop-in replacements; check package, pinout and electrical limits.
Other Optocouplers
- EL357N – Everlight, Phototransistor Photocoupler
- EL357N-G-TA – Everlight, Phototransistor Optocoupler
- EL357NA – Everlight, Phototransistor Photocoupler
- EL357NC – Everlight, Phototransistor Photocoupler
- EL357ND – Everlight, Phototransistor Photocoupler
- EL357NE – Everlight, Phototransistor Photocoupler
- EL357NF – Everlight, Phototransistor Photocoupler
- FOD814 – onsemi, Phototransistor Optocoupler
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