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EL357N-G

Phototransistor Photocoupler

The EL357N-G is a phototransistor photocoupler from Everlight. View the full EL357N-G datasheet below including key specifications, pinout, absolute maximum ratings.

Manufacturer

Everlight

Category

Phototransistor Photocoupler

Package

4 Pin SOP

Key Specifications

ParameterValue
Fall Time (Tf)4 μs (typ), 18 μs (max)
Rise Time (Tr)3 μs (typ), 18 μs (max)
Isolation Voltage3750 V rms
Package Dimensions4.4mm x 7.4mm x 2.0mm (L x W x H, approximate from diagram)
Input Forward Current50mA
Input Forward Voltage1.2V to 1.4V
Input Reverse Voltage6V
Output Collector Current50mA
Operating Temperature Range-55°C to +110°C
Current Transfer Ratio (CTR)50% to 600% at IF = 5mA, VCE = 5V
Output Collector-Emitter Voltage80V
Output Emitter-Collector Voltage7V

Overview

Part: EL357N-G Series — Everlight

Type: Phototransistor Photocoupler

Description: A 4-pin small outline SMD phototransistor photocoupler featuring an infrared emitting diode optically coupled to a phototransistor, offering a current transfer ratio of 50-600% at IF=5mA, VCE=5V, and a high isolation voltage of 3750 V rms.

Operating Conditions:

  • Operating temperature: -55 to +110 °C
  • Current Transfer Ratio (CTR): 50–600% (at IF = 5mA, VCE = 5V)
  • Isolation voltage: 3750 V rms

Absolute Maximum Ratings:

  • Max forward current: 50 mA
  • Max collector current: 50 mA
  • Max collector-emitter voltage: 80 V
  • Max reverse voltage: 6 V
  • Max total power dissipation: 200 mW
  • Max storage temperature: +125 °C

Key Specs:

  • Forward voltage (VF): 1.4 V (max, at IF = 20mA)
  • Reverse current (IR): 10 μA (max, at VR = 4V)
  • Collector-Emitter dark current (ICEO): 100 nA (max, at VCE = 20V, IF = 0mA)
  • Collector-Emitter breakdown voltage (BVCEO): 80 V (min, at IC = 0.1mA)
  • Collector-Emitter saturation voltage (VCE(sat)): 0.2 V (max, at IF = 20mA, IC = 1mA)
  • Isolation resistance (RIO): 5×10^10 Ω (min, at VIO = 500Vdc, 40-60% R.H.)
  • Rise time (tr): 18 μs (max, at VCE = 2V, IC = 2mA, RL = 100Ω)
  • Fall time (tf): 18 μs (max, at VCE = 2V, IC = 2mA, RL = 100Ω)

Features:

  • Halogens free (Br <900 ppm, Cl <900 ppm, Br+Cl < 1500 ppm)
  • Current transfer ratio (CTR: 50~600% at IF =5mA, VCE =5V)
  • High isolation voltage between input and output (Viso=3750 V rms)
  • Compact 4 Pin SOP with a 2.0 mm profile
  • Compliance with EU REACH
  • Pb free and RoHS compliant
  • UL and cUL approved (No. E214129)
  • VDE approved (No. 132249)

Applications:

  • DC-DC Converters
  • Programmable controllers
  • Telecommunication equipments
  • Signal transmission between circuits of different potentials and impedances

Package:

  • 4 Pin SOP

Features

  • Halogens free (Br <900 ppm ,Cl <900 ppm , Br+Cl < 1500 ppm)
  • Current transfer ratio

(CTR: 50~600% at IF =5mA, VCE =5V)

  • High isolation voltage between input and output (Viso=3750 V rms )
  • Compact 4 Pin SOP with a 2.0 mm profile
  • Compliance with EU REACH
  • Pb free and RoHS compliant
  • UL and cUL approved (No. E214129)
  • VDE approved (No. 132249)
  • SEMKO approved
  • NEMKO approved
  • DEMKO approved
  • FIMKO approved

Applications

  • DC-DC Converters
  • Programmable controllers
  • Telecommunication equipments
  • Signal transmission between circuits of different potentials and impedances

Pin Configuration

EL357N-G Pinout

Package: 4-Pin SOP

Pin NumberPin NameTypeDescription
1AnodeILED anode (input)
2CathodeILED cathode (input)
3EmitterOTransistor emitter (output)
4CollectorOTransistor collector (output)

Notes

  • EL357N-G is an optoisolator (optocoupler) with an integrated LED and phototransistor.
  • Pins 1–2 form the input (LED) side; pins 3–4 form the output (transistor) side.
  • Pin numbering is derived directly from the "Pin Configuration" list in the datasheet; no pin diagram image was provided to verify against.

Absolute Maximum Ratings

ParameterSymbolRatingUnit
Forward currentI F50mA
Peak forward current (1us, pulse)I FP1A
Reverse voltageV R6V
Power dissipation Derating factor (about Ta=100°C)P D70mW
P D2.9mW/C
Power dissipation Derating factor (above T a = 70 °P C150mW
C)P C3.7mW/°C
OutputCollector currentI C50mA
OutputCollector-Emitter voltageV CEO80V
Emitter-Collector voltageV ECO7V
Total Power DissipationTotal Power DissipationP TOT200mW
Isolation Voltage* 1Isolation Voltage* 1V ISO3750V rms
Operating temperatureOperating temperatureT OPR-55 ~ +110°C
Storage temperatureStorage temperatureT STG-55 ~ +125°C
Soldering Temperature*2Soldering Temperature*2T SOL260°C

Ordering Information

MPNPackageTemperature RangePacking
EL357N-GSOP-4-55 ~ +110 °C100 units per tube
EL357N-VGSOP-4-55 ~ +110 °C100 units per tube
EL357NTA-GSOP-4-55 ~ +110 °C3000 units per reel
EL357NTB-GSOP-4-55 ~ +110 °C3000 units per reel
EL357NTA-VGSOP-4-55 ~ +110 °C3000 units per reel
EL357NTB-VGSOP-4-55 ~ +110 °C3000 units per reel
EL357NA-GSOP-4-55 ~ +110 °C100 units per tube
EL357NA-VGSOP-4-55 ~ +110 °C100 units per tube
EL357NATA-GSOP-4-55 ~ +110 °C3000 units per reel
EL357NATB-GSOP-4-55 ~ +110 °C3000 units per reel
EL357NATA-VGSOP-4-55 ~ +110 °C3000 units per reel
EL357NATB-VGSOP-4-55 ~ +110 °C3000 units per reel
EL357NB-GSOP-4-55 ~ +110 °C100 units per tube
EL357NB-VGSOP-4-55 ~ +110 °C100 units per tube
EL357NBTA-GSOP-4-55 ~ +110 °C3000 units per reel
EL357NBTB-GSOP-4-55 ~ +110 °C3000 units per reel
EL357NBTA-VGSOP-4-55 ~ +110 °C3000 units per reel
EL357NBTB-VGSOP-4-55 ~ +110 °C3000 units per reel
EL357NC-GSOP-4-55 ~ +110 °C100 units per tube
EL357NC-VGSOP-4-55 ~ +110 °C100 units per tube
EL357NCTA-GSOP-4-55 ~ +110 °C3000 units per reel
EL357NCTB-GSOP-4-55 ~ +110 °C3000 units per reel
EL357NCTA-VGSOP-4-55 ~ +110 °C3000 units per reel
EL357NCTB-VGSOP-4-55 ~ +110 °C3000 units per reel
EL357ND-GSOP-4-55 ~ +110 °C100 units per tube
EL357ND-VGSOP-4-55 ~ +110 °C100 units per tube
EL35

Related Variants

The following components are covered by the same datasheet.

Part NumberManufacturerPackage
EL357NEverlight
EL357NAEverlight
EL357NBEverlight
EL357NCEverlight
EL357NDEverlight
EL357NEEverlight
EL357NFEverlight
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