EL357ND

Phototransistor Photocoupler

The EL357ND is a phototransistor photocoupler from Everlight. View the full EL357ND datasheet below including key specifications, absolute maximum ratings.

EL357ND shares its datasheet with EL357N, whose page lists every part number it covers.

Official EL357ND datasheet (PDF) — the source this page was extracted from.

Manufacturer

Everlight

EL357ND Key Specifications

Parameter	Value
Fall Time	4 us typ, 18 us max (VCE=2V, IC=2mA, RL=100 ohm)
Pin Count	4
Rise Time	3 us typ, 18 us max (VCE=2V, IC=2mA, RL=100 ohm)
Package Height	2.0 mm profile
Forward Voltage	1.2V typ, 1.4V max at IF=20mA
Reverse Voltage	6 V
Isolation Voltage	3750 Vrms
Storage Temperature	-55°C to +125°C
Floating Capacitance	0.6 pF typ, 1.0 pF max
Isolation Resistance	5x10^10 ohm min
Peak Forward Current	1 A (1 us pulse)
Forward Current (Max)	50 mA
Operating Temperature	-55°C to +110°C
Soldering Temperature	260°C for 10 s
Collector Current (Max)	50 mA
Total Power Dissipation	200 mW
Current Transfer Ratio (CTR)	300% to 600% (rank D) at IF=5mA, VCE=5V
Collector-Emitter Dark Current	100 nA max at VCE=20V
Collector-Emitter Voltage (VCEO)	80 V
Emitter-Collector Voltage (VECO)	7 V
Collector-Emitter Saturation Voltage	0.2V max at IF=20mA, IC=1mA

EL357ND Overview

Part: EL357N-G Series — Everlight

Type: Phototransistor Photocoupler

Description: A 4-pin small outline SMD phototransistor photocoupler featuring an infrared emitting diode optically coupled to a phototransistor, offering a current transfer ratio of 50-600% at IF=5mA, VCE=5V, and a high isolation voltage of 3750 V rms.

Operating Conditions:

Operating temperature: -55 to +110 °C
Current Transfer Ratio (CTR): 50–600% (at IF = 5mA, VCE = 5V)
Isolation voltage: 3750 V rms

Absolute Maximum Ratings:

Max forward current: 50 mA
Max collector current: 50 mA
Max collector-emitter voltage: 80 V
Max reverse voltage: 6 V
Max total power dissipation: 200 mW
Max storage temperature: +125 °C

Key Specs:

Forward voltage (VF): 1.4 V (max, at IF = 20mA)
Reverse current (IR): 10 μA (max, at VR = 4V)
Collector-Emitter dark current (ICEO): 100 nA (max, at VCE = 20V, IF = 0mA)
Collector-Emitter breakdown voltage (BVCEO): 80 V (min, at IC = 0.1mA)
Collector-Emitter saturation voltage (VCE(sat)): 0.2 V (max, at IF = 20mA, IC = 1mA)
Isolation resistance (RIO): 5×10^10 Ω (min, at VIO = 500Vdc, 40-60% R.H.)
Rise time (tr): 18 μs (max, at VCE = 2V, IC = 2mA, RL = 100Ω)
Fall time (tf): 18 μs (max, at VCE = 2V, IC = 2mA, RL = 100Ω)

Features:

Halogens free (Br <900 ppm, Cl <900 ppm, Br+Cl < 1500 ppm)
Current transfer ratio (CTR: 50~600% at IF =5mA, VCE =5V)
High isolation voltage between input and output (Viso=3750 V rms)
Compact 4 Pin SOP with a 2.0 mm profile
Compliance with EU REACH
Pb free and RoHS compliant
UL and cUL approved (No. E214129)
VDE approved (No. 132249)

Applications:

DC-DC Converters
Programmable controllers
Telecommunication equipments
Signal transmission between circuits of different potentials and impedances

Package:

4 Pin SOP

EL357ND Features

Halogens free (Br <900 ppm ,Cl <900 ppm , Br+Cl < 1500 ppm)
Current transfer ratio

(CTR: 50~600% at IF =5mA, VCE =5V)

High isolation voltage between input and output (Viso=3750 V rms )
Compact 4 Pin SOP with a 2.0 mm profile
Compliance with EU REACH
Pb free and RoHS compliant
UL and cUL approved (No. E214129)
VDE approved (No. 132249)
SEMKO approved
NEMKO approved
DEMKO approved
FIMKO approved

EL357ND Applications

DC-DC Converters
Programmable controllers
Telecommunication equipments
Signal transmission between circuits of different potentials and impedances

EL357ND Absolute Maximum Ratings

	Parameter	Symbol	Rating	Unit
	Forward current	I F	50	mA
	Peak forward current (1us, pulse)	I FP	1	A
	Reverse voltage	V R	6	V
	Power dissipation Derating factor (about Ta=100°C)	P D	70	mW
		P D	2.9	mW/C
	Power dissipation Derating factor (above T a = 70 °	P C	150	mW
	C)	P C	3.7	mW/°C
Output	Collector current	I C	50	mA
Output	Collector-Emitter voltage	V CEO	80	V
	Emitter-Collector voltage	V ECO	7	V
Total Power Dissipation	Total Power Dissipation	P TOT	200	mW
Isolation Voltage* 1	Isolation Voltage* 1	V ISO	3750	V rms
Operating temperature	Operating temperature	T OPR	-55 ~ +110	°C
Storage temperature	Storage temperature	T STG	-55 ~ +125	°C
Soldering Temperature*2	Soldering Temperature*2	T SOL	260	°C

Variants on the same datasheet

These parts have exact links to the same datasheet. They are candidates to compare, not verified drop-in replacements; check package, pinout and electrical limits.

Part Number	Manufacturer	Package
EL357N	Everlight	SOP-4
EL357N-G	Everlight	4 Pin SOP
EL357NA	Everlight	SOP-4
EL357NB	Everlight	SOP-4
EL357NC	Everlight	SOP-4
EL357NE	Everlight	SOP-4
EL357NF	Everlight	SOP-4

Other Optocouplers

EL357N – Everlight, Phototransistor Photocoupler
EL357N-G-TA – Everlight, Phototransistor Optocoupler
EL357NA – Everlight, Phototransistor Photocoupler
EL357NB – Everlight, Phototransistor Photocoupler
EL357NC – Everlight, Phototransistor Photocoupler
EL357NE – Everlight, Phototransistor Photocoupler
EL357NF – Everlight, Phototransistor Photocoupler
FOD814 – onsemi, Phototransistor Optocoupler

All Optocouplers datasheets All Everlight datasheets (11)

Data on this page is extracted from publicly available manufacturer datasheets using automated tools including AI. It may contain errors or omissions. Always verify specifications against the official manufacturer datasheet before making design or purchasing decisions. See our Terms of Service. Rights holders can submit a takedown request.

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