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SI8261BBC-C-IP

Isolated Gate Driver

The SI8261BBC-C-IP is a isolated gate driver from Silicon Laboratories. View the full SI8261BBC-C-IP datasheet below including electrical characteristics.

Manufacturer

Silicon Laboratories

Category

Isolated Gate Driver

Overview

Part: Si826x — Silicon Laboratories

Type: Isolated Gate Driver

Description: 5 kV RMS isolated gate driver with LED emulator input, offering 0.6 A and 4.0 A peak output drive current options, 60 ns propagation delay, and a wide 6.5 to 30 V supply voltage range.

Operating Conditions:

  • Supply voltage: 6.5–30 V
  • Operating temperature: -40 to +125 °C
  • Input current: 6–30 mA
  • Isolation voltage: Up to 5000 V RMS

Absolute Maximum Ratings:

  • Max junction/case temperature: 140 °C

Key Specs:

  • Supply Voltage (V DD): 6.5–30 V
  • Output High Current (Source) (Si826xBxx): 0.5 A min, 1.8 A typ (t PW_IOH < 250 ns, V DD - V O = 7.5 V)
  • Output Low Current (Sink) (Si826xBxx): 1.2 A min, 4.0 A typ (t PW_IOL < 250 ns, V O - GND = 4.2 V)
  • Propagation delay (Low-to-High) (t PLH): 20 ns min, 40 ns typ, 60 ns max (C L = 200 pF)
  • Propagation delay (High-to-Low) (t PHL): 10 ns min, 30 ns typ, 50 ns max (C L = 200 pF)
  • Common Mode Transient Immunity (CMTI): 35 kV/μs min, 50 kV/μs typ (Output = low or high, V CM = 1500 V, I F > 6 mA)
  • Input Current Threshold (I F(TH)): 3.6 mA max
  • UVLO Threshold + (Si826xxCx mode): 10.5 V min, 12 V typ, 13.5 V max (V DD rising)

Features:

  • Pin-compatible, drop-in upgrades for popular high speed opto-coupled gate drivers
  • Low power diode emulator input
  • 0.6 and 4.0 Amp peak output drive current
  • Rail-to-rail output voltage
  • Higher common-mode transient immunity: >50 kV/μs typical
  • Multiple UVLO ordering options (5, 8, and 12 V) with hysteresis
  • 60 ns propagation delay, independent of input drive current
  • Up to 5000 V RMS isolation
  • 10 kV surge withstand capability
  • AEC-Q100 qualified

Applications:

  • IGBT/ MOSFET gate drives
  • Industrial, HEV and renewable energy inverters
  • AC, Brushless, and DC motor controls and drives
  • Variable speed motor control in consumer white goods
  • Isolated switch mode and UPS power supplies

Package:

  • SOIC-8 (Narrow body)
  • DIP8 (Gull-wing)
  • SDIP6 (Stretched SO-6)

Features

  • Pin-compatible, drop-in upgrades for popular high speed opto-coupled gate drivers
  • Low power diode emulator simplifies design-in process
  • 0.6 and 4.0 Amp peak output drive current
  • Rail-to-rail output voltage
  • Performance and reliability advantages vs. opto-drivers
  • Resistant to temperature and age
  • 10x lower FIT rate for longer service life
  • 14x tighter part-to-part matching
  • Higher common-mode transient immunity: >50 kV/μs typical
  • Robust protection features
  • Multiple UVLO ordering options (5, 8, and 12 V) with hysteresis

Applications

  • IGBT/ MOSFET gate drives
  • Industrial, HEV and renewable energy inverters
  • AC, Brushless, and DC motor controls and drives

Pin Configuration

Figure 17. Pin Configuration

Table 11. Pin Descriptions (SOIC-8, DIP8)

PinNameDescription
1NC*No connect.
2ANODEAnode of LED emulator. V O follows the signal applied to this input with respect to the CATHODE input.
3CATHODECathode of LED emulator. V O follows the signal applied to ANODE with respect to this input.
4NC*No connect.
5GNDExternal MOSFETsourceconnection and ground reference forV DD . This terminal is typically connected to ground but may be tied to a negative or positive voltage.
6V OOutput signal. Both V O pins are required to be shorted together for 4.0 A compliance.
7V OOutput signal. Both V O pins are required to be shorted together for 4.0 A compliance.
8V DDOutput-side power supply input referenced to GND (30 V max).

*Note: No Connect. These pins are not internally connected. To maximize CMTI performance, these pins should be connected to the ground plane.

Table 11. Pin Descriptions (SOIC-8, DIP8)

Electrical Characteristics

Table 1. Recommended Operating Conditions

ParameterSymbolMinTypMaxUnit
Supply VoltageV DD6.5-30V
Input CurrentI F(ON) (see Figure 1)6-30mA
Operating Temperature (Ambient)T A-40-125°C

Package Information

Figure 19 illustrates the package details for the Si826x in an 8- pin narrow-body SOIC pack age. Table 15 lists the values for the dimensions shown in the illustration.

Figure 19. 8-Pin Narrow Body SOIC Package Table 15. 8-Pin Narrow Body SOIC Package Diagram Dimensions

SymbolMillimetersMillimeters
MinMax
A1.351.75
A10.100.25
A21.40 REF1.55 REF
B0.330.51
C0.190.25
D4.805.00
E3.804.00
e1.27 BSC1.27 BSC
H5.806.20
h0.250.50
L0.401.27
08

Figure 19. 8-Pin Narrow Body SOIC Package Table 15. 8-Pin Narrow Body SOIC Package Diagram Dimensions

Related Variants

The following components are covered by the same datasheet.

Part NumberManufacturerPackage
SI8261AAC-C-IPSilicon Laboratories—
SI8261AAC-C-ISSilicon Laboratories—
SI8261AAD-C-ISSilicon Laboratories—
SI8261ABC-C-IPSilicon Laboratories—
SI8261ABC-C-ISSilicon Laboratories—
SI8261ABD-C-ISSilicon Laboratories—
SI8261ACC-C-IPSilicon Laboratories—
SI8261ACC-C-ISSilicon Laboratories—
SI8261ACD-C-ISSilicon Laboratories—
SI8261BAC-C-IPSilicon Laboratories—
SI8261BAC-C-ISSilicon Laboratories—
SI8261BAD-C-ISSilicon Laboratories—
SI8261BBC-APSilicon Laboratories—
SI8261BBC-ASSilicon Laboratories—
SI8261BBC-C-ISSilicon Laboratories—
SI8261BBD-C-ISSilicon Laboratories—
SI8261BCC-ASSilicon Laboratories—
SI8261BCC-C-IPSilicon Laboratories—
SI8261BCC-C-ISSilicon LaboratoriesSOIC-8 (Narrow body)
SI8261BCD-ASSilicon Laboratories—
SI8261BCD-C-ISSilicon Laboratories—
SI826XSilicon Laboratories—
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