MM3Z27VT1G

Zener Voltage Regulator

The MM3Z27VT1G is a zener voltage regulator from ON Semiconductor. View the full MM3Z27VT1G datasheet below including electrical characteristics, absolute maximum ratings.

Manufacturer

ON Semiconductor

Overview

Part: MM3ZxxxT1G Series, SZMM3ZxxxT1G Series — ON Semiconductor

Type: Zener Voltage Regulators

Description: This series of Zener diodes provides voltage regulation protection with a steady state power rating of 300 mW and a standard Zener breakdown voltage range from 2.4 V to 75 V, packaged in a small SOD-323 surface mount.

Operating Conditions:

Supply voltage: not applicable
Operating temperature: -65 to +150 °C
Zener breakdown voltage range: 2.4 V to 75 V

Absolute Maximum Ratings:

Total Device Dissipation: 300 mW (FR-4 Board, @TA = 25 °C)
Max junction/storage temperature: +150 °C

Key Specs:

Nominal Zener Voltage (Vz): 2.4 V to 75 V
Forward Voltage (Vf): 0.9 V Max. (@ If = 10 mA)
Max. Zener Impedance (Zzt): 10 Ω to 255 Ω (@ Izt)
Reverse Leakage Current (Ir): 0.05 μA to 50 μA (@ Vr)
Max. Capacitance (C): 35 pF to 450 pF (@ Vr = 0, f = 1 MHz)
Thermal Resistance, Junction-to-Ambient (RθJA): 416 °C/W
ESD Rating: Class 3 (> 16 kV) per Human Body Model

Features:

Steady State Power Rating of 300 mW
Standard Zener Breakdown Voltage Range - 2.4 V to 75 V
Small Body Outline Dimensions: 1.7 mm x 1.25 mm
Low Body Height: 0.9 mm
ESD Rating of Class 3 (> 16 kV) per Human Body Model
Pb-Free Devices
AEC-Q101 Qualified and PPAP Capable (for SZ prefix)

Applications:

Cellular phones
Hand held portables
High density PC boards

Package:

SOD-323 (1.7 mm x 1.25 mm x 0.9 mm)

Features

Steady State Power Rating of 300 mW
Standard Zener Breakdown Voltage Range - 2.4 V to 75 V
Small Body Outline Dimensions: 0.067' x 0.049' (1.7 mm x 1.25 mm)
Package Weight: 4.507 mg/Unit
Low Body Height: 0.035' (0.9 mm)
ESD Rating of Class 3 (> 16 kV) per Human Body Model
These are Pb-Free Devices*
SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable

Electrical Characteristics

Symbol	Parameter
V Z	Reverse Zener Voltage @I ZT
I ZT	Reverse Current
Z ZT	Maximum Zener Impedance @I ZT
I ZK	Reverse Current
Z ZK	Maximum Zener Impedance @I ZK
I R	Reverse Leakage Current@V R
V R	Reverse Voltage
I F	Forward Current
V F	Forward Voltage @I F
Q V Z	Maximum Temperature Coefficient of V Z
C	Max. Capacitance@V R = 0 and f = 1 MHz

ELECTRICAL CHARACTERISTICS (T A = 25 ° C unless otherwise noted, V F = 0.9 V Max. @ I F = 10 mA for all types)

ELECTRICAL CHARACTERISTICS (T A = 25 ° C unless otherwise noted, V F = 0.9 V Max. @ I F = 10 mA for all types)

	Device Marking	Zener Voltage	Zener Voltage	(Note	2)	Zener Impedance	Zener Impedance	Zener Impedance	Leakage Current	Leakage Current	Q V Z (mV/k)	Q V Z (mV/k)	C @V R = 0 f = 1 MHz
	Device Marking	V Z (Volts)	V Z (Volts)	V Z (Volts)	@I ZT	Z ZT @I ZT	Z ZK @I ZK	Z ZK @I ZK	I R @V R	I R @V R	@I ZT	@I ZT
Device*	Device Marking	Min	Nom	Max	mA	W	W	mA	m A	Volts	Min	Max	pF
MM3Z2V4T1G	00	2.2	2.4	2.6	5	100	1000	0.5	50	1.0	-3.5	0	450
MM3Z2V7T1G	01	2.5	2.7	2.9	5	100	1000	0.5	20	1.0	-3.5	0	450
MM3Z3V0T1G	02	2.8	3.0	3.2	5	100	1000	0.5	10	1.0	-3.5	0	450
MM3Z3V3T1G	05	3.1	3.3	3.5	5	95	1000	0.5	5	1.0	-3.5	0	450
MM3Z3V6T1G	06	3.4	3.6	3.8	5	90	1000	0.5	5	1.0	-3.5	0	450
MM3Z3V9T1G	07	3.7	3.9	4.1	5	90	1000	0.5	3	1.0	-3.5	-2.5	450
MM3Z4V3T1G	08	4.0	4.3	4.6	5	90	1000	0.5	3	1.0	-3.5	0	450
MM3Z4V7T1G	09	4.4	4.7	5.0	5	80	800	0.5	3	2.0	-3.5	0.2	260
MM3Z5V1T1G	0A	4.8	5.1	5.4	5	60	500	0.5	2	2.0	-2.7	1.2	225
MM3Z5V6T1G	0C	5.2	5.6	6.0	5	40	200	0.5	1	2.0	-2.0	2.5	200
MM3Z6V2T1G	0E	5.8	6.2	6.6	5	10	100	0.5	3	4.0	0.4	3.7	185
MM3Z6V8T1G	0F	6.4	6.8	7.2	5	15	160	0.5	2	4.0	1.2	4.5	155
MM3Z7V5T1G	0G	7.0	7.5	7.9	5	15	160	0.5	1	5.0	2.5	5.3	140
MM3Z8V2T1G	0H	7.7	8.2	8.7	5	15	160	0.5	0.7	5.0	3.2	6.2	135
MM3Z9V1T1G	0K	8.5	9.1	9.6	5	15	160	0.5	0.2	7.0	3.8	7.0	130
MM3Z10VT1G	0L	9.4	10	10.6	5	20	160	0.5	0.1	8.0	4.5	8.0	130
MM3Z11VT1G	0M	10.4	11	11.6	5	20	160	0.5	0.1	8.0	5.4	9.0	130
MM3Z12VT1G	0N	11.4	12	12.7	5	25	80	0.5	0.1	8.0	6.0	10	130
MM3Z13VT1G	0P	12.4	13.25	14.1	5	30	80	0.5	0.1	8.0	7.0	11	120
MM3Z15VT1G	0T	14.3	15	15.8	5	30	80	0.5	0.05	10.5	9.2	13	110
MM3Z16VT1G	0U	15.3	16.2	17.1	5	40	80	0.5	0.05	11.2	10.4	14	105
MM3Z18VT1G	0W	16.8	18	19.1	5	45	80	0.5	0.05	12.6	12.4	16	100
MM3Z20VT1G	0Z	18.8	20	21.2	5	55	100	0.5	0.05	14.0	14.4	18	85
MM3Z22VT1G	10	20.8	22	23.3	5	55	100	0.5	0.05	15.4	16.4	20	85
MM3Z24VT1G	11	22.8	24.2	25.6	5	70	120	0.5	0.05	16.8	18.4	22	80
MM3Z27VT1G	12	25.1	27	28.9	2	80	300	0.5	0.05	18.9	21.4	25.3	70
MM3Z30VT1G	14	28	30	32	2	80	300	0.5	0.05	21.0	24.4	29.4	70
MM3Z33VT1G	18	31	33	35	2	80	300	0.5	0.05	23.2	27.4	33.4	70
MM3Z36VT1G	19	34	36	38	2	90	500	0.5	0.05	25.2	30.4	37.4	70
MM3Z39VT1G	20	37	39	41	2	130	500	0.5	0.05	27.3	33.4	41.2	45
MM3Z43VT1G	21	40	43	46	2	150	500	0.5	0.05	30.1	37.6	46.6	40
MM3Z47VT1G	1A	44	47	50	2	170	500	0.5	0.05	32.9	42.0	51.8	40
MM3Z51VT1G	1C	48	51	54	2	180	500	0.5	0.05	35.7	46.6	57.2	40
MM3Z56VT1G	1D	52	56	60	2	200	500	0.5	0.05	39.2	52.2	63.8	40
MM3Z62VT1G	2A	58	62	66	2	215	500	0.5	0.05	43.4	58.9	71.8	35
MM3Z68VT1G	1F 1G	64 70	68 75	72	2	240	500 500	0.5	0.05	47.6	65.6	79.8	35 35
MM3Z75VT1G				79	2	255		0.5	0.05	52.5	73.4	88.6

Zener voltage is measured with a pulse test current I Z at an ambient temperature of 25 ° C.

Absolute Maximum Ratings

Rating	Symbol	Max	Unit
Total Device Dissipation FR-4 Board, (Note 1)@T A = 25 ° C Derate above 25 ° C	P D	300 2.4	mW mW/ ° C
Thermal Resistance, Junction-to-Ambient	R q JA	416	° C/W
Junction and Storage Temperature Range	T J , T stg	-65 to +150	° C

http://onsemi.com

SOD-323

CASE 477

STYLE 1

Package Information

SOD-323 CASE 477-02 ISSUE H

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