GD32E103CB
ARM Cortex-M4 32-bit MCUThe GD32E103CB is a arm cortex-m4 32-bit mcu from GigaDevice. View the full GD32E103CB datasheet below including key specifications, electrical characteristics, absolute maximum ratings.
GD32E103CB shares its datasheet with GD32E103VBT6, whose page lists every part number it covers.
Official GD32E103CB datasheet (PDF) — the source this page was extracted from.
GD32E103CB Key Specifications
| Parameter | Value |
|---|---|
| ADC | 2 units, 10 channels |
| CAN | 2x CAN (FD) |
| DAC | 2 |
| I2C | 2 |
| USB | USB Full-Speed (USBFS) |
| Core | ARM Cortex-M4 32-bit |
| SRAM | 32 KB |
| Flash | 128 KB |
| USART | 3 (USART0-2) |
| SPI/I2S | 3 SPI / 2 I2S |
| Pin Count | 48 |
| EXTI Lines | 16 |
| Watchdog Timers | 2 |
| Basic Timers (16-Bit) | 2 |
| Operating Temperature | -40°C to +85°C (Industrial) |
| General Timers (16-Bit) | 10 |
| Advanced Timers (16-Bit) | 1 |
GD32E103CB Overview
Part: GD32E103VBT6 (GD32E103xx family) — GigaDevice Semiconductor Inc.
Type: ARM Cortex-M4 32-bit MCU
Description: 32-bit general-purpose ARM Cortex-M4 microcontroller from the GD32E103xx connectivity line, offered in LQFP100, LQFP64, LQFP48 and QFN36 packages.
Operating Conditions:
- Supply voltage: VDD up to 3.6 V (absolute maximum VSS + 3.6 V)
- Operating temperature: -40 to +85 °C (TA, per Table 4-1)
- Maximum PCLK1 frequency for the WWDGT timeout table: 60 MHz
Absolute Maximum Ratings:
- Max supply voltage (VDD, VDDA, VBAT): VSS + 3.6 V
- Max GPIO pin current: ±25 mA
- Max junction temperature: 125 °C
- Storage temperature: -55 to +150 °C
- Input voltage on 5V-tolerant pin: VDD + 3.6 V max
Key Specs:
- Absolute max supply voltages (VDD, VDDA, VBAT): -0.3 to 3.6 V (relative to VSS/VSSA)
- Input voltage on other I/O: VSS - 0.3 to 3.6 V
- Max variation between different VDD or VSS pins: 50 mV
- Power dissipation at TA = 85 °C: 813 mW (LQFP100), 733 mW (LQFP64), 574 mW (LQFP48), 1086 mW (QFN36)
- Operating temperature range (TA): -40 to +85 °C
Features:
- ARM Cortex-M4 RISC core
- Peripherals include ADC, DAC, DMA, timers/PWM, RTC, I2C, SPI, I2S, USART, USBFS, CAN and EXMC
- Debug mode support
- Supply supervisor and internal/external clock sources (HXTAL, LXTAL, IRC8M, IRC40K, IRC48M, PLL)
Applications:
- General-purpose embedded control
Package:
- LQFP100
- LQFP64
- LQFP48
- QFN36
GD32E103CB Pin Configuration
Figure 2-2. GD32E103Vx LQFP100 pinouts
Figure 2-3. GD32E103Rx LQFP64 pinouts
Figure 2-4. GD32E103Cx LQFP48 pinouts
Figure 2-5. GD32E103Tx QFN36 pinouts
GD32E103CB Electrical Characteristics
Table 4-26. ADC characteristics
| Symbol | Parameter | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| V DDA (1) | Operating voltage | - | 2.4 | 3.3 | 3.6 | V |
| V IN (1) | ADC input voltage range | - | 0 | - | V REF+ | V |
| f ADC (1) | ADC clock | - | 0.1 | - | 42 | MHz |
| f S (1) | Sampling rate | 12-bit | 0.007 | - | 3 | MSPS |
| f S (1) | Sampling rate | 10-bit | 0.008 | - | 3.5 | MSPS |
| f S (1) | Sampling rate | 8-bit | 0.01 | - | 4.2 | MSPS |
| f S (1) | Sampling rate | 6-bit | 0.011 | - | 5.25 | MSPS |
| V AIN (1) | Analog input voltage | 16 external; 2 internal | 0 | - | V DDA | V |
| V REF+ (2) | Positive Reference Voltage | - | 1.8 | - | V DDA | V |
| V REF- (2) | Negative Reference Voltage | - | - | V SSA | - | V |
| R AIN (2) | External input impedance | See Equation 1 | - | - | 24 | kΩ |
| R ADC (2) | Input sampling switch resistance | - | - | - | 0.2 | kΩ |
| C ADC (2) | Input sampling capacitance | No pin/pad capacitance included | - | - | 5.5 | pF |
| t CAL (2) | Calibration time | f ADC = 42 MHz | - | 3.12 | - | μs |
| t s (2) | Sampling time | f ADC = 42 MHz | 0.036 | - | 5.7 | μs |
| t CONV (2) | Total conversion time(including sampling time) | 12-bit | - | 14 | - | 1/ f ADC |
| t CONV (2) | Total conversion time(including sampling time) | 10-bit | - | 12 | - | 1/ f ADC |
| t CONV (2) | Total conversion time(including sampling time) | 8-bit | - | 10 | - | 1/ f ADC |
| t CONV (2) | Total conversion time(including sampling time) | 6-bit | - | 8 | - | 1/ f ADC |
| t SU (2) | Startup time | - | - | - | 1 | μs |
$$R_{AIN} < \frac{T_s}{f_{ADC}C_{ADC}\ln(2^{N+2})} - R_{ADC}$$
The formula above (Equation 1) is used to determine the maximum external impedance allowed for an error below 1/4 of LSB. Here N = 12 (from 12-bit resolution).
Table 4-27. ADC RAIN max for fADC = 42 MHz
- T s (cycles) t s (us) R AINmax (kΩ)
- 1.5 0.04 0.47
- 7.5 0.18 3.15
- 13.5 0.32 5.82
- 28.5 0.68 12.55
- 41.5 0.99 18.35
- 55.5 1.32 24.55
- 71.5 1.70 NA
Table 4-27. ADC RAIN max for fADC = 42 MHz
| T s (cycles) | t s (us) | R AINmax (kΩ) |
|---|---|---|
| 239.5 | 5.70 | NA |
Table 4-28. ADC dynamic accuracy at fADC = 14 MHz (1)
| Symbol | Parameter | Test conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| ENOB | Effective number of bits | f ADC = 14 MHz | - | 10.3 | - | bits |
| SNDR | Signal-to-noise and distortion ratio | V DDA = V REF+ = 3.3 V | - | 63.8 | - | |
| SNR | Signal-to-noise ratio | Input Frequency = 20 | - | 64.5 | - | dB |
| THD | Total harmonic distortion | kHz Temperature = 25 °C | - | -67.5 | - |
Table 4-29. ADC dynamic accuracy at fADC = 42 MHz (1)
| Symbol | Parameter | Test conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| ENOB | Effective number of bits | f ADC = 42 MHz | - | 10.3 | - | bits |
| SNDR | Signal-to-noise and distortion ratio | V DDA = V REF+ = 3.3 V | - | 63.8 | - | |
| SNR | Signal-to-noise ratio | Input Frequency = 20 kHz | - | 64.5 | - | dB |
| THD | Total harmonic distortion | Temperature = 25 °C | - | -67.5 | - |
Table 4-30. ADC static accuracy at fADC = 42 MHz (1)
| Symbol | Parameter | Test conditions | Typ | Max | Unit |
|---|---|---|---|---|---|
| Offset | Offset error | f ADC = 42 MHz V DDA = V REF+ = 3.3 V | ±1 | - | LSB |
| DNL | Differential linearity error | f ADC = 42 MHz V DDA = V REF+ = 3.3 V | ±1 | - | LSB |
| INL | Integral linearity error | f ADC = 42 MHz V DDA = V REF+ = 3.3 V | ±3 | - | LSB |
GD32E103CB Absolute Maximum Ratings
The maximum ratings are the limits to which the device can be subjected without permanently damaging the device. Note that the device is not guaranteed to operate properly at the maximum ratings. Exposure to the absolute maximum rating conditions for extended periods may affect device reliability.
Table 4-1. Absolute maximum ratings (1)(4)
| Symbol | Parameter | Min | Max | Unit |
|---|---|---|---|---|
| V DD | External voltage range (2) | V SS - 0.3 | V SS + 3.6 | V |
| V DDA | External analog supply voltage | V SSA - 0.3 | V SSA + 3.6 | V |
| V BAT | External battery supply voltage | V SS - 0.3 | V SS + 3.6 | V |
| V IN | Input voltage on 5V tolerant pin (3) | V SS - 0.3 | V DD + 3.6 | V |
| V IN | Input voltage on other I/O | V SS - 0.3 | 3.6 | V |
| |ΔV DDX | | Variations between different V DD power pins | - | 50 | mV |
| |V SSX -V SS | | Variations between different ground pins | - | 50 | mV |
| I IO | Maximum current for GPIO pins | - | ±25 | mA |
| T A | Operating temperature range | -40 | +85 | ° C |
| P D | Power dissipation at T A = 85° C of LQFP100 | - | 813 | mW |
| P D | Power dissipation at T A = 85° C of LQFP64 | - | 733 | mW |
| P D | Power dissipation at T A = 85° C of LQFP48 | - | 574 | mW |
| P D | Power dissipation at T A = 85° C of QFN36 | - | 1086 | mW |
| T STG | Storage temperature range | -55 | +150 | ° C |
| T J | Maximum junction temperature | - | 125 | ° C |
GD32E103CB Thermal Information
Thermal resistance is used to characterize the thermal performance of the package device, which is represented by the Greek letter ' Θ '. For semiconductor devices, thermal resistance represents the steady-state temperature rise of the chip junction due to the heat dissipated on the chip surface.
Θ JA: Thermal resistance, junction-to-ambient.
Θ JB: Thermal resistance, junction-to-board.
Θ JC: Thermal resistance, junction-to-case.
Ψ JB: Thermal characterization parameter, junction-to-board.
Ψ JT: Thermal characterization parameter, junction-to-top center.
$$\theta_{JA} = (T_J - T_A)/P_D$$
$$\Theta_{JB} = (T_J - T_B)/P_D$$
$$\Theta_{JC} = (T_J - T_C)/P_D$$
Where, TJ = Junction temperature.
TA = Ambient temperature
TB = Board temperature
TC = Case temperature which is monitoring on package surface
PD = Total power dissipation
Θ JA represents the resistance of the heat flows from the heating junction to ambient air. It is an indicator of package heat dissipation capability. Lower Θ JA can be considerate as better overall thermal performance. Θ JA is generally used to estimate junction temperature.
- Θ JB is used to measure the heat flow resistance between the chip surface and the PCB board.
- Θ JC represents the thermal resistance between the chip surface and the package top case.
- Θ JC is mainly used to estimate the heat dissipation of the system (using heat sink or other heat dissipation methods outside the device package).
Table 5-5. Package thermal characteristics (1)
| Symbol | Condition | Package | Value | Unit |
|---|---|---|---|---|
| Θ JA | T A = 85° C, Natural convection, 2S2P PCB | LQFP100 | 49.18 | ° C/W |
| Θ JA | T A = 85° C, Natural convection, 2S2P PCB | LQFP64 | 54.57 | ° C/W |
| Θ JA | T A = 85° C, Natural convection, 2S2P PCB | LQFP48 | 69.64 | ° C/W |
| Θ JA | T A = 85° C, Natural convection, 2S2P PCB | QFN36 | 36.82 | ° C/W |
| Θ JB | T A = 25° C, Cold plate, 2S2P PCB | LQFP100 | 22.70 | ° C/W |
| Θ JB | T A = 25° C, Cold plate, 2S2P PCB | LQFP64 | 35.08 | ° C/W |
| Θ JB | T A = 25° C, Cold plate, 2S2P PCB | LQFP48 | 43.16 | ° C/W |
| Θ JB | T A = 25° C, Cold plate, 2S2P PCB | QFN36 | 9.79 | ° C/W |
| Θ JC | T A = 25° C, Cold plate, 2S2P PCB | LQFP100 | 12.52 | ° C/W |
| Θ JC | T A = 25° C, Cold plate, 2S2P PCB | LQFP64 | 18.11 | ° C/W |
| Θ JC | T A = 25° C, Cold plate, 2S2P PCB | LQFP48 | 25.36 | ° C/W |
| Θ JC | T A = 25° C, Cold plate, 2S2P PCB | QFN36 | 13.31 | ° C/W |
| Ψ JB | T A = 85° C, Natural convection, 2S2P PCB | LQFP100 | 32.85 | ° C/W |
| Ψ JB | T A = 85° C, Natural convection, 2S2P PCB | LQFP64 | 35.41 | ° C/W |
| Ψ JB | T A = 85° C, Natural convection, 2S2P PCB | LQFP48 | 47.75 | ° C/W |
| Ψ JB | T A = 85° C, Natural convection, 2S2P PCB | QFN36 | 9.87 | ° C/W |
| Ψ JT | T A = 85° C, Natural convection, 2S2P PCB | LQFP100 | 0.53 | ° C/W |
| Ψ JT | T A = 85° C, Natural convection, 2S2P PCB | LQFP64 | 1.10 | ° C/W |
| Ψ JT | T A = 85° C, Natural convection, 2S2P PCB | LQFP48 | 2.45 | ° C/W |
| Ψ JT | T A = 85° C, Natural convection, 2S2P PCB | QFN36 | 0.43 | ° C/W |
GD32E103CB Package Information
Figure 5-1. LQFP100 package outline
Table 5-1. LQFP100 package dimensions
| Symbol | Min | Typ | Max |
|---|---|---|---|
| A | - | - | 1.60 |
| A1 | 0.05 | - | 0.15 |
| A2 | 1.35 | 1.40 | 1.45 |
| A3 | 0.59 | 0.64 | 0.69 |
| D | 15.80 | 16.0 | 16.20 |
| D1 | 13.90 | 14.0 | 14.10 |
| E | 15.80 | 16.0 | 16.20 |
| E1 | 13.90 | 14.0 | 14.10 |
| θ | 0° | 3.5° | 7° |
| c | 0.13 | - | 0.17 |
| c1 | 0.12 | 0.13 | 0.14 |
| L | 0.45 | 0.6 | 0.75 |
| L1 | - | 1.0REF | - |
Table 5-1. LQFP100 package dimensions
| Symbol | Min | Typ | Max |
|---|---|---|---|
| b | 0.18 | 0.20 | 0.26 |
| b1 | 0.17 | 0.20 | 0.23 |
| eB | 15.05 | - | 15.35 |
| e | - | 0.50BSC | - |
(Original dimensions are in millimeters)
Variants on the same datasheet
These parts have exact links to the same datasheet. They are candidates to compare, not verified drop-in replacements; check package, pinout and electrical limits.
| Part Number | Manufacturer | Package |
|---|---|---|
| GD32E103C8 | GigaDevice | LQFP-48 |
| GD32E103C8T6 | GigaDevice | LQFP48 |
| GD32E103CBT6 | GigaDevice | LQFP48 |
| GD32E103CC | GigaDevice | — |
| GD32E103CE | GigaDevice | — |
| GD32E103CX | GigaDevice | — |
| GD32E103R8 | GigaDevice | LQFP-64 |
| GD32E103R8T6 | GigaDevice | LQFP64 |
| GD32E103RB | GigaDevice | LQFP-64 |
| GD32E103RBT6 | GigaDevice | LQFP64 |
| GD32E103RC | GigaDevice | LQFP-64 |
| GD32E103RE | GigaDevice | LQFP-64 |
| GD32E103RX | GigaDevice | LQFP-64 |
| GD32E103T8 | GigaDevice | QFN-36 |
| GD32E103T8U6 | GigaDevice | QFN36 |
| GD32E103TB | GigaDevice | QFN-36 |
| GD32E103TBU6 | GigaDevice | QFN36 |
| GD32E103TX | GigaDevice | QFN-36 |
| GD32E103V8 | GigaDevice | LQFP-100 |
| GD32E103V8T6 | GigaDevice | LQFP100 |
| GD32E103VB | GigaDevice | LQFP-100 |
| GD32E103VBT6 | GigaDevice | LQFP100 |
| GD32E103VC | GigaDevice | LQFP-100 |
| GD32E103VE | GigaDevice | LQFP-100 |
| GD32E103VX | GigaDevice | LQFP-100 |
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