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EFR32BG24A010F1024IM40-B

Wireless System-on-Chip (SoC)

The EFR32BG24A010F1024IM40-B is a wireless system-on-chip (soc) from Silicon Labs. View the full EFR32BG24A010F1024IM40-B datasheet below including key specifications, electrical characteristics, absolute maximum ratings.

EFR32BG24A010F1024IM40-B shares its datasheet with EFR32BG24A010F1024IM48, whose page lists every part number it covers.

Official EFR32BG24A010F1024IM40-B datasheet (PDF) — the source this page was extracted from.

Manufacturer

Silicon Labs

Package

QFN-40 5x5mm

EFR32BG24A010F1024IM40-B Key Specifications

ParameterValue
ADC12-bit @ 1 Msps or 16-bit @ 76.9 ksps
DAC2x VDAC
RAM128 kB
CoreARM Cortex-M33, up to 78 MHz
Flash1024 kB
ProtocolsBluetooth Low Energy 5.3, Bluetooth Mesh, Proprietary 2.4 GHz
GPIO Count26
Max TX Power10 dBm
Secure VaultMid
Supply Voltage1.71V to 3.8V
Package Dimensions5 mm × 5 mm × 0.85 mm
TX Current (0 DBm)5 mA
TX Current (10 DBm)19.1 mA
Active Current (EM0)33.4 μA/MHz at 39.0 MHz
EM2 DeepSleep Current1.3 μA
Operating Temperature-40°C to 125°C
Communication Interfaces1x USART, 2x EUSART, 2x I2C
RX Current (1 Mbps GFSK)4.4 mA
RX Sensitivity (1 Mbps GFSK)-97.6 dBm
RX Sensitivity (125 Kbps GFSK)-105.7 dBm

EFR32BG24A010F1024IM40-B Overview

Part: EFR32BG24A010F1024IM48-B — Silicon Labs Type: Wireless System-on-Chip (SoC) Description: A 32-bit ARM Cortex-M33 core running at up to 78 MHz, with 1024 kB Flash and 128 kB RAM, featuring a high-performance 2.4 GHz radio with up to +10 dBm output power, an AI/ML hardware accelerator, and Secure Vault Mid security.

Operating Conditions:

  • Supply voltage: 1.71 V to 3.8 V
  • Operating temperature: -40 to +125 °C
  • Max operating frequency: 78 MHz

Absolute Maximum Ratings:

  • Max supply voltage: 3.8 V
  • Max junction/storage temperature: 125 °C

Key Specs:

  • CPU: ARM Cortex-M33 with DSP and FPU
  • Max CPU frequency: 78 MHz
  • Flash memory: Up to 1536 kB (1024 kB for this variant)
  • RAM memory: Up to 256 kB (128 kB for this variant)
  • RX current (1 Mbps GFSK): 4.4 mA
  • TX current @ 0 dBm: 5 mA
  • EM2 DeepSleep current (16 kB RAM retention): 1.3 μA
  • ADC resolution: 12-bit @ 1 Msps or 16-bit @ 76.9 ksps
  • Die temperature sensor accuracy: +/-1.5 °C

Features:

  • High performance 2.4 GHz radio with up to +19.5 dBm output power
  • AI/ML Hardware Accelerator (Matrix Vector Processor)
  • Secure Vault (Mid or High grade)
  • Bluetooth Low Energy (BLE 5.3) and Bluetooth Mesh support
  • Hardware Cryptographic Acceleration
  • True Random Number Generator (TRNG)
  • ARM TrustZone
  • Wide selection of MCU peripherals including IADC, VDAC, ACMP, Timers, USART, EUSART, I2C
  • Up to 32 General Purpose I/O pins

Applications:

  • Smart Home - Gateways and hubs, sensors, switches, door locks, smart plugs
  • Lighting - LED bulbs, luminaires
  • Portable Medical Devices - Blood glucose meters, pulse oximeters
  • AI/ML - Predictive maintenance, glass break detection, wake-word detection

Package:

  • QFN40 (5 mm × 5 mm × 0.85 mm)
  • QFN48 (6 mm × 6 mm × 0.85 mm)

EFR32BG24A010F1024IM40-B Features

  • 32-bit ARM® Cortex®-M33 core with 78 MHz maximum operating frequency
  • Up to 1536 kB of flash and 256 kB of RAM
  • High performance radio with up to +19.5 dBm output power
  • Energy efficient design with low active and sleep currents
  • Secure Vault™
  • AI/ML Hardware Accelerator

EFR32BG24A010F1024IM40-B Applications

  • Smart Home - Gateways and hubs, sensors, switches, door locks, smart plugs
  • Lighting - LED bulbs, luminaires
  • Portable Medical Devices - Blood glucose meters, pulse oximeters
  • AI/ML - Predictive maintenance, glass break detection, wake-word detection

EFR32BG24A010F1024IM40-B Electrical Characteristics

All electrical parameters in all tables are specified under the following conditions, unless stated otherwise:

  • Typical values are based on T A =25 °C and all supplies at 3.0 V, by production test and/or technology characterization.
  • Radio performance numbers are measured in conducted mode, based on Silicon Laboratories reference designs using output power-specific external RF impedance-matching networks for interfacing to a 50 Ω antenna.
  • Minimum and maximum values represent the worst conditions across supply voltage, process variation, and operating temperature, unless stated otherwise.

Due to on-chip circuitry (e.g., diodes), some EFR32BG24 power supply pins have a dependent relationship with one or more other power supply pins. These internal relationships between the external voltages applied to the various EFR32BG24 supply pins are defined below. Exceeding the below constraints can result in damage to the device and/or increased current draw.

  • VREGVDD and DVDD
  • In systems using the DCDC converter, DVDD (the buck converter output) should not be driven externally and VREGVDD (the buck converter input) must be greater than DVDD (VREGVDD ≥ DVDD)
  • In systems not using the DCDC converter, DVDD must be shorted to VREGVDD on the PCB (VREGVDD = DVDD)
  • AVDD, IOVDD: No dependency with each other or any other supply pin. Additional leakage may occur if DVDD remains unpowered with power applied to these supplies.
  • DVDD ≥ DECOUPLE
  • PAVDD ≥ RFVDD

EFR32BG24A010F1024IM40-B Absolute Maximum Ratings

Stresses beyond those listed below may cause permanent damage to the device. This is a stress rating only and functional operation of the devices at those or any other conditions beyond those indicated in the operation listings of this specification is not implied. Exposure to maximum rating conditions for extended periods may affect device reliability. For more information on the available quality and reliability data, see the Quality and Reliability Monitor Report at http://www.silabs.com/support/quality/pages/default.aspx.

Table 4.1. Absolute Maximum Ratings

ParameterSymbolTest ConditionMinTypMaxUnit
Storage temperature rangeT STG-50-+150°C
Voltage on any supply pin 1V DDMAX-0.3-3.8V
Junction temperatureT JMAX-I grade--+125°C
Voltage ramp rate on any supply pinV DDRAMPMAX--1.0V / μs
Voltage on HFXO pinsV HFXOPIN-0.3-1.2V
DC voltage on any GPIO pinV DIGPIN-0.3-V IOVDD + 0.3V
DC voltage on RESETn pin 2V RESETn-0.3-3.8V
DC voltage on RF pin RF2G4_IOV MAX2G4-0.3-1.2V
Total current into VDD power linesI VDDMAXSource--200mA
Total current into VSS ground linesI VSSMAXSink--200mA
Current per I/O pinI IOMAXSink--50mA
Current per I/O pinSource--50mA
Current for all I/O pinsI IOALLMAXSink--200mA
Current for all I/O pinsSource--200mA
  1. The maximum supply voltage on VREGVDD is limited under certain conditions when using the DC-DC. See the DC-DC specifications for more details.

  2. The RESETn pin has a pull-up device to the DVDD supply. For minimum leakage, RESETn should not exceed the voltage at DVDD.

EFR32BG24A010F1024IM40-B Thermal Information

Table 4.4. Thermal Characteristics

PackageBoardParameterSymbolTest ConditionValueUnit
40QFN (5x5mm)JEDEC - High Thermal Cond. (2s2p) 1Thermal Resistance, Junction to AmbientΘ JAStill Air29.2°C/W
40QFN (5x5mm)JEDEC - High Thermal Cond. (2s2p) 1Thermal Resistance, Junction to BoardΘ JB15.2°C/W
40QFN (5x5mm)JEDEC - High Thermal Cond. (2s2p) 1Thermal Resistance, Junction to Top CenterѰ JT0.3°C/W
40QFN (5x5mm)JEDEC - High Thermal Cond. (2s2p) 1Thermal Resistance, Junction to BoardѰ JB11.2°C/W
40QFN (5x5mm)No BoardThermal Resistance, Junction to CaseΘ JCTemperature controlled heat sink on top of package, all other sides of package insulated to prevent heat flow.24.6°C/W
48QFN (6x6mm)JEDEC - High Thermal Cond. (2s2p) 1Thermal Resistance, Junction to AmbientΘ JAStill Air27.7°C/W
48QFN (6x6mm)JEDEC - High Thermal Cond. (2s2p) 1Thermal Resistance, Junction to BoardΘ JB14.6°C/W
48QFN (6x6mm)JEDEC - High Thermal Cond. (2s2p) 1Thermal Resistance, Junction to Top CenterѰ JT0.69°C/W
48QFN (6x6mm)JEDEC - High Thermal Cond. (2s2p) 1Thermal Resistance, Junction to BoardѰ JB11.85°C/W
48QFN (6x6mm)No BoardThermal Resistance, Junction to CaseΘ JCTemperature controlled heat sink on top of package, all other sides of package insulated to prevent heat flow.23°C/W
  1. Based on 4 layer PCB with dimension 3" x 4.5", PCB Thickness of 1.6 mm, per JEDEC. PCB Center Land with 9 Via to top internal plane of PCB.

EFR32BG24A010F1024IM40-B Package Information

Figure 7.1. QFN40 Package Drawing

Table 7.1. QFN40 Package Dimensions

DimensionMinTypMax
A0.800.850.90
A10.000.020.05
A30.20 REF0.20 REF0.20 REF
b0.150.200.25
D4.905.005.10
E4.905.005.10
D23.553.703.85
E23.553.703.85
e0.40 BSC0.40 BSC0.40 BSC
L0.300.400.50
K0.20--
R0.075--
aaa0.100.100.10
bbb0.070.070.07
ccc0.100.100.10
ddd0.050.050.05
eee0.080.080.08
fff0.100.100.10
  1. All dimensions shown are in millimeters (mm) unless otherwise noted.

  2. Dimensioning and Tolerancing per ANSI Y14.5M-1994.

  3. This drawing conforms to the JEDEC Solid State Outline MO-220, Variation VKKD-4.

  4. Recommended card reflow profile is per the JEDEC/IPC J-STD-020 specification for Small Body Components.

  5. Package external pad (epad) may have pin one chamfer.

Variants on the same datasheet

These parts have exact links to the same datasheet. They are candidates to compare, not verified drop-in replacements; check package, pinout and electrical limits.

Part NumberManufacturerPackage
EFR32BG24Silicon Labs—
EFR32BG24A010F1024IM48Silicon LabsQFN48
EFR32BG24A010F1024IM48-BSilicon LabsQFN48
EFR32BG24A020F1024IM40-BSilicon LabsQFN40
EFR32BG24A020F1024IM48-BSilicon LabsQFN48
EFR32BG24B110F1536IM48-BSilicon LabsQFN48
EFR32BG24B210F1024IM48-BSilicon Labs48-VFQFN Exposed Pad
EFR32BG24B220F1024IM48-BSilicon LabsQFN48

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