CY8C6347FMI-BLD53

Part: PSoC™ 6 MCU: CY8C63x6, CY8C63x7 — Infineon

Type: Microcontroller (MCU)

Description: High-performance, ultra-low-power and secured MCU platform with dual 150-MHz Arm Cortex-M4F and 100-MHz Cortex-M0+ CPUs, 1 MB Flash, 288 KB SRAM, and Bluetooth LE 5.0 connectivity.

Operating Conditions:

• Supply voltage: 1.7–3.6 V
• Operating temperature: -40 to +85 °C
• CM4 CPU frequency: up to 150 MHz
• CM0+ CPU frequency: up to 100 MHz

Absolute Maximum Ratings:

• Max supply voltage: 3.8 V
• Max junction temperature: +125 °C

Key Specs:

• CM4 CPU frequency: 150 MHz
• CM0+ CPU frequency: 100 MHz
• Application Flash: 1 MB
• SRAM: 288 KB
• Deep Sleep current: 7 μA (with 64-KB SRAM retention)
• SAR ADC resolution: 12-bit, 1 Msps
• Bluetooth LE TX power: up to 4 dBm
• Bluetooth LE RX sensitivity: -95 dBm

Features:

• 32-bit Dual CPU subsystem (150-MHz Arm Cortex-M4F, 100-MHz Cortex-M0+)
• 1-MB application flash, 288-KB SRAM
• Bluetooth® Low Energy 5.0 subsystem
• On-chip Single-In Multiple Out (SIMO) DC-DC buck converter
• Nine run-time configurable serial communication blocks (SCBs)
• USB full-speed device interface
• 12-bit 1-Msps SAR ADC
• CAPSENSE™ capacitive sensing
• Hardware cryptography accelerator and True random number generation (TRNG)

Package:

• 124-BGA
• 104-M-CSP
• 116-BGA
• 68-QFN

• 32-bit Dual CPU subsystem
• 150-MHz Arm® Cortex®-M4F (CM4) CPU with single-cycle multiply, floating point, and memory protection unit (MPU)
• 100-MHz Cortex®-M0+ (CM0+) CPU with single-cycle multiply and MPU
• -User-selectable core logic operation at either 1.1 V or 0.9 V
• Active CPU current slope with 1.1-V core operation
• Cortex®-M4: 40 μA/MHz
• Cortex®-M0+: 20 μA/MHz
• Active CPU current slope with 0.9-V core operation
• Cortex®-M4: 22 μA/MHz
• Cortex®-M0+: 15 μA/MHz
• Two DMA controllers with 16 channels each
• Memory subsystem
• 1-MB application flash, 32-KB auxiliary flash (AUXflash), and 32-KB supervisory flash (SFlash); read-while-write (RWW) support. Two 8-KB flash caches, one for each CPU.
• 288-KB SRAM with power and data retention control
• One-time-programmable (OTP) 1-Kb eFuse array
• Bluetooth® Low Energy subsystem
• -2.4-GHz RF transceiver with 50- antenna drive
• Digital PHY
• Link Layer engine supporting master and slave modes
• Programmable TX power: up to 4 dBm
• RX sensitivity: -95 dBm
• RSSI: 4-dB resolution
• 5.7-mA Tx (0 dBm) and 6.7 mA RX (2 Mbps) current with 3.3-V supply and internal SIMO Buck converter
• Link Layer engine supports four connections simultaneously
• Supports 2 Mbps data rate
• Low-power 1.7-V to 3.6-V operation
• Six power modes for fine-grained power management
• Deep Sleep mode current of 7 μA with 64-KB SRAM retention
• On-chip Single-In Multiple Out (SIMO) DC-DC buck converter, <1 μA quiescent current
• Backup domain with 64 bytes of memory and real-time clock
• Flexible clocking options
• 8-MHz Internal Main Oscillator (IMO) with ±2% accuracy
• Ultra-low-power 32-kHz Internal Low-speed Oscillator (ILO)
• -On-chip crystal oscillators (16 to 35 MHz, and 32 kHz)

All specifications are valid for -40°C ≤ T A ≤ 85°C and for 1.71 V to 3.6 V except where noted.