BZT52C10S

Zener Diode

The BZT52C10S is a zener diode from GOOD-ARK Electronics. View the full BZT52C10S datasheet below including key specifications.

Official BZT52C10S datasheet (PDF) — the source this page was extracted from.

Manufacturer

GOOD-ARK Electronics

BZT52C10S Key Specifications

Parameter	Value
Marking	WF
Power Dissipation	500 mW
Test Current (Izt)	5 mA
Storage Temperature	-65C to +150C
Forward Voltage (Vf)	0.9 V @ IF=10mA
Knee Impedance Zzk @1mA	150 ohm
Temperature Coefficient	4.5 to 8.0 mV/C
Zener Voltage Range @5mA	9.4V to 10.6V
Dynamic Impedance Zzt @5mA	20 ohm
Reverse Leakage Current IR	0.2 uA max @ VR=7.0V
Zener Voltage Nominal (Vz)	10 V
Junction/Operating Temperature	-55C to +150C
Thermal Resistance Junction To Ambient	400 K/W

BZT52C10S Overview

Part: BZT52Cxx Series — GOOD-ARK Electronics

Type: Zener Diode

Description: 500mW Zener diode series in SOD-123 package with nominal Zener voltages ranging from 2.0 V to 75 V.

Operating Conditions:

Operating temperature: -55 to +150 °C
Forward voltage: 0.9 V @ IF=10mA
Nominal Zener voltage: 2.0 V to 75 V

Absolute Maximum Ratings:

Max power dissipation: 500 mW
Max junction temperature: +150 °C
Max storage temperature: +150 °C

Key Specs:

Power dissipation (Pd): 500 mW
Forward voltage (Vf): 0.9 V @ IF=10mA
Nominal Zener voltage (Vz@Izt): 2.0 V to 75 V
Zener test current (Izt): 2 mA or 5 mA (depending on Vz)
Dynamic Zener Impedance (Zzt): 10 Ω to 300 Ω (at Izt, varies by Vz)
Reverse leakage current (IR): 0.1 μA to 100 μA (at VR, varies by Vz)
Thermal resistance from junction to ambient (RthA): 400 K/W

Features:

Low Zener Impedance
500mW Power Dissipation
High Stability and High Reliability

Package:

SOD-123 Small outline plastic package

BZT52C10S Features

Low Zener Impedance
500mW; Power Dissipation of 500mW
High Stability and High Reliability

BZT52C10S Package Information

SOD-123 Small o utline plastic package
Polarity: color band denotes cathode end
●
Epoxy UL: 94V-0
Mounting position: any

Maximum Ratings & Electrical Characteristics (T A =25° C unless otherwise noted)	Maximum Ratings & Electrical Characteristics (T A =25° C unless otherwise noted)	Maximum Ratings & Electrical Characteristics (T A =25° C unless otherwise noted)	Maximum Ratings & Electrical Characteristics (T A =25° C unless otherwise noted)
Parameters	Symbol	Value	Unit
Power dissipation	Pd	500	mW
Forward v oltage @IF=10mA	Vf	0.9	V
Storage temperature range	Ts	-65 to +150	°C
Junction/ operating t emperature	Tj	- 5 5 to +150	°C
Thermal resistance from junction to ambient	R thA	400	K/W

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All Diodes datasheets

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