Integrated Circuits Datasheets
4,511 Integrated Circuits datasheets read into specs, pinouts and ratings. Parts from Texas Instruments, STMicroelectronics and Microchip Technology.
Integrated Circuits datasheets, page 88
4,511 parts · page 88 of 151. Most used first, then by part number.
MP2307DN
Monolithic Power Systems
Monolithic synchronous buck regulator with integrated 100mΩ MOSFETs, providing 3A continuous load current over a 4.75V to 23V input range.
MP2307DN-LF-Z
Monolithic Power Systems
Switching Voltage Regulators 3A/23VSynchRectified Step-down Converter
MP2307DN-Z
Monolithic Power Systems
3A, 23V input, 340kHz monolithic synchronous rectified step-down converter with integrated 100mΩ MOSFETs and current mode control (not recommended for new designs; refer to MP2393)
MP2315
Monolithic Power Systems
3A, 24V, 500kHz high-efficiency synchronous step-down converter with integrated 110mΩ/55mΩ power MOSFETs, AAM power-save mode, OCP, OVP and thermal shutdown. The datasheet describes the MP2315S, the next generation of the MP2315.
MP2315S
Monolithic Power Systems
3A, 24V, 500kHz high-efficiency synchronous step-down (buck) converter with integrated 110mΩ/55mΩ power MOSFETs, AAM power-save mode, and OCP/OVP/thermal protection
MP2315SGJ
Monolithic Power Systems
3A, 24V, 500kHz high-efficiency synchronous step-down (buck) converter with integrated 110mΩ/55mΩ power MOSFETs, AAM power-save mode, and OCP/OVP/thermal protection
MP2315SGJ-Z
Monolithic Power Systems
Switching Voltage Regulators 3A 24V Hi Effc.Sync Step Down Converter
MP2344
Monolithic Power Systems
26V, 2A, 600kHz high-efficiency synchronous step-down (buck) converter with integrated 95mΩ/45mΩ power MOSFETs, power-save mode, low-EMI switching edge, OCP with hiccup and thermal shutdown.
MP2344GJ
Monolithic Power Systems
26V, 2A, 600kHz high-efficiency synchronous step-down converter with integrated 95mΩ/45mΩ power MOSFETs, low-EMI optimization, and OCP/thermal protection in TSOT23-6
MP2639B
Monolithic Power Systems
Highly integrated switch-mode battery charger for single-cell Li-ion/Li-polymer batteries with wide 4.5V-16V input range, up to 5A charge current, and integrated programmable boost (OTG) discharge mode up to 16V/3A
MP2639BGR
Monolithic Power Systems
Integrated switch-mode battery charging management device with programmable OTG boost for single-cell Li-ion/Li-Polymer batteries.
MP4420
Monolithic Power Systems
High-efficiency 2A, 36V-tolerant synchronous step-down switch-mode converter with integrated 90mΩ/55mΩ power MOSFETs, 410kHz default frequency and external clock sync, in an 8-pin TSOT23 package.
MP4420GJ
Monolithic Power Systems
High-efficiency 2A, 36V-tolerant synchronous step-down (buck) converter with integrated 90mΩ/55mΩ power MOSFETs, current-mode control, and external clock synchronization
MP4420GJ-P
Monolithic Power Systems
Buck Switching Regulator IC Positive Adjustable 0.8V 1 Output 2A SOT-23-8 Thin,
MP4420GJ-Z
Monolithic Power Systems
High-efficiency 2A, 36V-tolerant synchronous step-down switch-mode converter with integrated 90mΩ/55mΩ power MOSFETs, 4V to 30V input, adjustable output from 0.8V, in TSOT23-8
MP9942
Monolithic Power Systems
High-efficiency 2A, 36V, 410kHz synchronous step-down (buck) converter with integrated power MOSFETs, power good output, and external clock synchronization
MP9942GJ
Monolithic Power Systems
High-efficiency 2A, 36V, 410kHz synchronous step-down converter with integrated power MOSFETs, power good indicator, and external clock synchronization
MP9942GJ-P
Monolithic Power Systems
Buck Switching Regulator IC Positive Adjustable 0.8V 1 Output 2A SOT-23-8 Thin,
MP9942GJ-Z
Monolithic Power Systems
High-efficiency 2A, 36V, 410kHz synchronous step-down converter with integrated power MOSFETs, power good indicator, and over-current/thermal protection
MPQ4572
Monolithic Power Systems
DC switching power IC from MPS (automotive-qualified family) used in this webinar as an example for explaining datasheet thermal parameters; typical application is a 5V/2A buck output.
MR4A16B
Everspin Technologies
16,777,216-bit (1M x 16) magnetoresistive RAM with SRAM-compatible 35 ns read/write timing, unlimited endurance, >20-year non-volatile data retention and on-chip single-bit ECC
MR4A16BCMA35
Everspin Technologies
16Mbit (1M x 16) 3.3V magnetoresistive RAM with SRAM-compatible 35 ns read/write timing, unlimited endurance and >20-year non-volatile data retention, industrial temperature range
MR4A16BCMA35R
Everspin Technologies
3.3V 16,777,216-bit (1M x 16) magnetoresistive RAM with SRAM-compatible 35 ns read/write timing, unlimited endurance, >20-year non-volatile data retention and on-chip ECC; industrial temperature, tape & reel BGA version.
MR4A16BCYS35
Everspin Technologies
16Mbit (1M x 16) 3.3V magnetoresistive RAM with SRAM-compatible 35 ns read/write timing, unlimited endurance and >20-year non-volatile data retention, with internal ECC
MR4A16BCYS35R
Everspin Technologies
3.3V 1M x 16 (16,777,216-bit) magnetoresistive RAM with SRAM-compatible 35 ns read/write timing, unlimited endurance, and >20-year non-volatile data retention with on-chip single-bit ECC.
MR4A16BMA35
Everspin Technologies
16Mb (1M x 16) 3.3V magnetoresistive RAM with SRAM-compatible 35 ns read/write timing, unlimited endurance and >20-year non-volatile data retention
MR4A16BMYS35
Everspin Technologies
16-Mbit (1M x 16) 3.3V magnetoresistive RAM with SRAM-compatible 35 ns read/write timing, unlimited endurance, non-volatile storage and on-chip ECC; AEC-Q100 Grade 1 variant in 54-TSOP2.
MR4A16BMYS35R
Everspin Technologies
3.3V 16,777,216-bit (1M x 16) magnetoresistive RAM with SRAM-compatible 35 ns read/write timing, unlimited endurance, >20-year non-volatile data retention, and AEC-Q100 Grade 1 qualification in this variant
MR4A16BYS35
Everspin Technologies
16Mbit (1M x 16) 3.3V magnetoresistive RAM with SRAM-compatible 35 ns read/write timing, unlimited endurance and >20-year non-volatile data retention
MR4A16BYS35R
Everspin Technologies
3.3V 1M x 16 (16,777,216-bit) magnetoresistive RAM with SRAM-compatible 35 ns read/write timing, unlimited endurance and >20-year non-volatile data retention