UCC27211
High-Side and Low-Side Gate DriverThe UCC27211 is a high-side and low-side gate driver from Texas Instruments. View the full UCC27211 datasheet below including key specifications, electrical characteristics, absolute maximum ratings.
Official UCC27211 datasheet (PDF) — the source this page was extracted from.
Manufacturer
Texas InstrumentsCategory
Integrated CircuitsUCC27211 Key Specifications
| Parameter | Value |
|---|---|
| Channel Type | Independent |
| Current - Peak Output (Source, Sink) | 4A, 4A |
| DigiKey Programmable | Not Verified |
| Driven Configuration | Half-Bridge |
| Gate Type | MOSFET (N-Channel) |
| High Side Voltage - Max (Bootstrap) | 120 V |
| Input Type | Non-Inverting |
| Logic Voltage - VIL, VIH | 1.3V, 2.7V |
| Mounting Type | Surface Mount |
| Number of Drivers | 2 |
| Operating Temperature | -40°C ~ 140°C (TJ) |
| Package / Case | 8-VDFN Exposed Pad |
| Rise / Fall Time (Typ) | 7.2ns, 5.5ns |
| Supplier Device Package | 8-VSON (4x4) |
| Supply Voltage | 8V ~ 17V |
UCC27211 Overview
Part: UCC27211A
Type: High-Side and Low-Side Gate Driver
Description: 120-V boot, 4-A peak sink and source high-frequency high-side and low-side driver for two N-channel MOSFETs with independent inputs.
Operating Conditions:
- Supply voltage: 8 to 17 V
- Operating temperature: -40 to 140 °C
- High-side source voltage (VHS): -1 to 105 V
Absolute Maximum Ratings:
- Max supply voltage: 20 V
- Max junction/storage temperature: 150 °C
Key Specs:
- Peak pullup current: 3.7 A typ (HO, LO, V = 0 V)
- Peak pulldown current: 4.5 A typ (HO, LO, V = 12 V)
- VDD quiescent current: 0.085 mA typ, 0.17 mA max (VLI = VHI = 0 V)
- Input threshold voltage (rising): 2.3 V typ, 2.7 V max (TJ = -40°C to 140°C)
- Input threshold voltage (falling): 1.6 V typ, 1.3 V min (TJ = -40°C to 140°C)
- VDD turnon UVLO threshold: 7 V typ (6.2 V min, 7.8 V max)
- Output rise time: 7.2 ns typ (CLOAD = 1000 pF, 10% to 90%)
- Output fall time: 5.5 ns typ (CLOAD = 1000 pF, 90% to 10%)
- Propagation delay: 20 ns typ (rising), 16 ns typ (falling) (CLOAD = 0)
Features:
- Drives two N-channel MOSFETs in high-side and low-side configuration with independent inputs
- 120-V DC maximum bootstrap voltage with on-chip bootstrap diode
- 4-A sink and 4-A source output currents
- 0.9-Ω pullup and pulldown resistance
- Input pins tolerate -10 V to +20 V independent of supply voltage range
- TTL-compatible inputs with increased hysteresis
- Symmetrical undervoltage lockout for high-side and low-side drivers
- Negative voltage handling on switching node HS (-18 V max, repetitive pulse)
Applications:
- Power supplies for telecom, datacom, and merchant
- Half-bridge and full-bridge converters
- Push-pull converters
- High-voltage synchronous-buck converters
- Two-switch forward converters
- Active-clamp forward converters
- Class-D audio amplifiers
Package:
- 8-pin SOIC (4.90 mm × 3.91 mm)
- 8-pin VSON (4.00 mm × 4.00 mm)
- 10-pin SON (4.00 mm × 4.00 mm)
UCC27211 Applications
- 1 · Drives Two N-Channel MOSFETs in High-Side and Low-Side Configuration With Independent Inputs
- Maximum Boot Voltage 120-V DC
- 4-A Sink, 4-A Source Output Currents
- 0.9Ω Pullup and Pulldown Resistance
- Input Pins Can Tolerate -10 V to +20 V and are Independent of Supply Voltage Range
- TTL or Pseudo-CMOS Compatible Input Versions
- 8-V to 17-V VDD Operating Range, (20-V ABS MAX)
- 7.2-ns Rise and 5.5-ns Fall Time With 1000-pF Load
- Fast Propagation Delay Times (20-ns typical)
- 4-ns Delay Matching
- Symmetrical Undervoltage Lockout for High-Side and Low-Side Driver
- All Industry Standard Packages Available
- -SOIC-8
- -4-mm × 4-mm SON-8
- -4-mm × 4-mm SON-10
- Specified from -40 to +140°C
UCC27211 Pin Configuration
UCC27211 Electrical Characteristics
VDD = VHB = 12 V, VHS = VSS = 0 V, no load on LO or HO, TA = TJ = -40°C to 140°C, (unless otherwise noted)
| PARAMETER | PARAMETER | TEST CONDITION | MIN | TYP | MAX | UNIT |
|---|---|---|---|---|---|---|
| SUPPLY CURRENTS | SUPPLY CURRENTS | SUPPLY CURRENTS | SUPPLY CURRENTS | SUPPLY CURRENTS | SUPPLY CURRENTS | SUPPLY CURRENTS |
| I DD | V DD quiescent current | V(LI) = V(HI) = 0 V | 0.05 | 0.085 | 0.17 | mA |
| I DDO | V DD operating current | f = 500 kHz, C = 0 | 2.1 | 2.6 | 6.5 | mA |
| Boot voltage quiescent | LOAD | 2.1 | 2.5 | 6.5 | mA | |
| I HB | current | V(LI) = V(HI) = 0 V | 0.015 | 0.065 | 0.1 | mA |
| I HBO | Boot voltage operating current | f = 500 kHz, C LOAD = 0 | 1.5 | 2.5 | 5.1 | mA |
| I HBS | HB to V SS quiescent current | V(HS) = V(HB) = 115 V | 0.0005 | 1 | μA | |
| I HBSO | HB to V SS operating current | f = 500 kHz, C LOAD = 0 | 0.07 | 1.2 | mA | |
| INPUT | INPUT | INPUT | INPUT | INPUT | INPUT | INPUT |
| V HIT | Input voltage threshold | 1.9 | 2.3 | 2.7 | V | |
| V LIT | Input voltage threshold | 1.3 | 1.6 | 1.9 | V | |
| V IHYS | Input voltage hysteresis | 700 | mV | |||
| R IN | Input pulldown resistance | 68 | k Ω | |||
| UNDER-VOLTAGE LOCKOUT (UVLO) | UNDER-VOLTAGE LOCKOUT (UVLO) | UNDER-VOLTAGE LOCKOUT (UVLO) | UNDER-VOLTAGE LOCKOUT (UVLO) | UNDER-VOLTAGE LOCKOUT (UVLO) | UNDER-VOLTAGE LOCKOUT (UVLO) | UNDER-VOLTAGE LOCKOUT (UVLO) |
| V DDR | V DD turnon threshold | 6.2 | 7 | 7.8 | V | |
| V DDHYS | Hysteresis | 0.5 | V | |||
| V HBR | V HB turnon threshold | 5.6 | 6.7 | 7.9 | V | |
| V HBHYS | Hysteresis | 1.1 | V | |||
| BOOTSTRAP DIODE | BOOTSTRAP DIODE | BOOTSTRAP DIODE | BOOTSTRAP DIODE | BOOTSTRAP DIODE | BOOTSTRAP DIODE | BOOTSTRAP DIODE |
| V F | Low-current forward voltage | I VDD-HB = 100 μA | 0.65 | 0.8 | V | |
| V FI | High-current forward voltage | I VDD-HB = 100 mA | 0.85 | 0.95 | V | |
| R D | Dynamic resistance, Δ VF/ Δ I | I VDD-HB = 100 mA and 80 mA | 0.3 | 0.5 | 0.85 | Ω |
| LO GATE DRIVER | LO GATE DRIVER | LO GATE DRIVER | LO GATE DRIVER | LO GATE DRIVER | LO GATE DRIVER | LO GATE DRIVER |
| V LOL | Low-level output voltage | I LO = 100 mA | 0.05 | 0.1 | 0.19 | V |
| V LOH | High level output voltage | I LO = -100 mA, V LOH = V DD - V LO | 0.1 | 0.16 | 0.29 | V |
| Peak pull-up current (1) | V LO = 0 V | 3.7 | A | |||
| Peak pull-down current (1) | V LO = 12 V | 4.5 | A | |||
| HO GATE DRIVER | HO GATE DRIVER | HO GATE DRIVER | HO GATE DRIVER | HO GATE DRIVER | HO GATE DRIVER | HO GATE DRIVER |
| V HOL | Low-level output voltage | I HO = 100 mA | 0.05 | 0.1 | 0.19 | V |
| V HOH | High-level output voltage | I HO = -100 mA, V HOH = V HB - V HO | 0.1 | 0.16 | 0.29 | V |
| Peak pull-up current (1) | V HO = 0 V | 3.7 | A | |||
| Peak pull-down current (1) | V HO = 12 V | 4.5 | A |
VDD = VHB = 12 V, VHS = VSS = 0 V, no load on LO or HO, TA = TJ = -40°C to 140°C, (unless otherwise noted)
UCC27211 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted) (1)
| MIN | MAX | UNIT | ||
|---|---|---|---|---|
| Supply voltage range, V DD (2) , V HB - V HS | Supply voltage range, V DD (2) , V HB - V HS | -0.3 | 20 | V |
| Input voltages on LI and HI, V LI , V HI | Input voltages on LI and HI, V LI , V HI | -10 | 20 | V |
| Output voltage | DC | -0.3 | V DD + 0.3 | V |
| Output voltage | Repetitive pulse < 100 ns (3) | -2 | V DD + 0.3 | V |
| Output voltage | DC | V HS - 0.3 | V HB + 0.3 | V |
| Output voltage | Repetitive pulse < 100 ns (3) | V HS - 2 | V HB + 0.3 | V |
| Voltage | DC | -1 | 115 | V |
| Voltage | Repetitive pulse < 100 ns (3) | -(24 V - VDD) | 115 | V |
| Voltage on HB, V HB | Voltage on HB, V HB | -0.3 | 120 | V |
| Operating virtual junction temperature range, T J | Operating virtual junction temperature range, T J | -40 | 150 | °C |
| Storage temperature, T STG | Storage temperature, T STG | -65 | 150 | °C |
UCC27211 Recommended Operating Conditions
all voltages are with respect to V SS; currents are positive into and negative out of the specified terminal. -40°C < T J = TA < 140°C (unless otherwise noted)
| MIN | NOM | MAX | UNIT | |
|---|---|---|---|---|
| Supply voltage range, V DD , V HB - V HS | 8 | 12 | 17 | V |
| Voltage on HS, V HS | -1 | 105 | V | |
| Voltage on HS, V HS (repetitive pulse < 100 ns) | -(24 V - VDD) | 110 | V | |
| Voltage on HB, V HB | V HS + 8, V DD - 1 | V HS + 17, 115 | V | |
| Voltage slew rate on HS | 50 | V/ns | ||
| Operating junction temperature | -40 | 140 | °C |
UCC27211 Thermal Information
| THERMAL METRIC (1) | UCC27211A - D (SOIC) - 8 PINS | UCC27211A - DRM (SON) - 8 PINS | UNIT | |
|---|---|---|---|---|
| R θ JA | Junction-to-ambient thermal resistance | 111.8 | 37.7 | °C/W |
| R θ JC(top) | Junction-to-case (top) thermal resistance | 56.9 | 47.2 | °C/W |
| R θ JB | Junction-to-board thermal resistance | 53.0 | 9.6 | °C/W |
| ψ JT | Junction-to-top characterization parameter | 7.8 | 2.8 | °C/W |
| ψ JB | Junction-to-board characterization parameter | 52.3 | 9.4 | °C/W |
| R θ JC(bot) | Junction-to-case (bottom) thermal resistance | n/a | 3.6 | °C/W |
UCC27211 Typical Application
- Power Supplies for Telecom, Datacom, and Merchant
- Half-Bridge and Full-Bridge Converters
- Push-Pull Converters
- High Voltage Synchronous-Buck Converters
- Two-Switch Forward Converters
- Active-Clamp Forward Converters
- Class-D Audio Amplifiers
Variants on the same datasheet
These parts have exact links to the same datasheet. They are candidates to compare, not verified drop-in replacements; check package, pinout and electrical limits.
| Part Number | Manufacturer | Package |
|---|---|---|
| UCC27211A | Texas Instruments | VSON-8 4.0x4.0mm |
| UCC27211A-Q1 | Texas Instruments | — |
| UCC27211AD | Texas Instruments | SOIC-8 |
| UCC27211ADR | Texas Instruments | SOIC-8 |
| UCC27211ADRMR | Texas Instruments | 8-VDFN Exposed Pad |
| UCC27211ADRMT | Texas Instruments | 8-VDFN Exposed Pad |
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All Integrated Circuits datasheetsAll Texas Instruments datasheets (2,434)
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