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TM4C129ENCPDT

Microcontroller

The TM4C129ENCPDT is a microcontroller from Texas Instruments. View the full TM4C129ENCPDT datasheet below including key specifications, absolute maximum ratings.

TM4C129ENCPDT shares its datasheet with TM4C129, whose page lists every part number it covers.

Official TM4C129ENCPDT datasheet (PDF) — the source this page was extracted from.

TM4C129ENCPDT Key Specifications

ParameterValue
CoreARM Cortex-M4F
QSSI FIFO16 bits wide, 8 locations deep
QSSI Modules4
μDMA Channels32
QSSI Data Frame Size4 to 16 bits
Hardware AcceleratorsAES, DES, SHA/MD5, CRC
Non-Volatile User Registers32 bits each (USER_REG)

TM4C129ENCPDT Overview

Part: TM4C129ENCPDT — Texas Instruments

Type: ARM Cortex-M4F Microcontroller

Description: Tiva C Series 32-bit ARM Cortex-M4F microcontroller with Ethernet, crypto accelerators (AES, DES, SHA/MD5), CRC, and a Hibernation module.

Operating Conditions:

Absolute Maximum Ratings:

  • Max supply voltage: 4 V (VDD, VDDA, and VBAT)
  • Max VBAT ramp rate: 0.7 V/μs
  • Input voltage on GPIO: -0.3 to 4 V
  • Max current per output pin: 64 mA
  • Max junction temperature: 125 °C
  • Storage temperature (unpowered): -65 to 150 °C
  • ESD: HBM 2.0 kV, CDM 500 V

Key Specs:

  • VDD, VDDA, VBAT absolute maximum: 4 V
  • GPIO input voltage range: -0.3 to 4 V
  • Maximum current per output pin: 64 mA
  • Maximum junction temperature: 125 °C
  • Storage temperature: -65 to 150 °C
  • ESD HBM: 2.0 kV; CDM: 500 V

Features:

  • ARM Cortex-M4F processor core with FPU and MPU
  • Cryptographic accelerators: AES, DES, SHA/MD5
  • Cyclical Redundancy Check (CRC)
  • Ethernet
  • Hibernation module with real-time clock, tamper detection, and battery-backed memory
  • JTAG and ARM Serial Wire Debug
  • Serial communications peripherals
  • Advanced motion control and analog peripherals

Applications:

Package:

TM4C129ENCPDT Features

The TM4C129ENCPDT microcontroller component features and general function are discussed in more detail in the following section.

TM4C129ENCPDT Absolute Maximum Ratings

The maximum ratings are the limits to which the device can be subjected without permanently damaging the device. Device reliability may be adversely affected by exposure to absolute-maximum ratings for extended periods.

Note: The device is not guaranteed to operate properly at the maximum ratings.

Table 30-1. Absolute Maximum Ratings

ParameterParameter Name aValue - MinValue - MaxUnit
V DDV DD supply voltage04V
V DDAV DDA supply voltage04V
V BATV BAT battery supply voltage04V
V BATRMPV BAT battery supply voltage ramp time00.7V/μs
V IN_GPIOInput voltage b-0.34V
I GPIOMAXMaximum current per output pin-64mA
T SUnpowered storage temperature range-65150°C
T JMAXMaximum junction temperature-125°C

Important: This device contains circuitry to protect the I/Os against damage due to high-static voltages; however, it is advised that normal precautions be taken to avoid application of any voltage higher than maximum-rated voltages to this high-impedance circuit. Reliability of operation is enhanced if unused inputs are connected to an appropriate logic voltage level (see 'Connections for Unused Signals' on page 1940).

Table 30-2. ESD Absolute Maximum Ratings

ParameterParameter NameMinNomMaxUnit
V Component-LevelESDStress Voltage aESDHBM b--2.0kV
V ESDCDM c--500V
  • ■ The Ethernet EN0RXIN , EN0TX0N , EN0RXIP , and EN0TXOP pins to each other.
  • ■ The GPIO pins PM4 , PM5 , PM6 , and PM7 to other pins.

These exceptions are compliant to 500 V and do not require any special handling beyond typical ESD control procedures during assembly operations per JEDEC publication JEP155. Note that these pins do meet the 500 V CDM specification.

c. Level listed is the passing level per EIA-JEDEC JESD22-C101E. JEDEC document JEP157 states that 250 V CDM allows safe manufacturing with a standard ESD control process.

The following sections describe the recommended DC operating conditions and GPIO operating characteristics for the device.

TM4C129ENCPDT Thermal Information

CharacteristicSymbolValueUnit
Thermal resistance (junction to ambient) bΘ JA44.2°C/W
Thermal resistance (junction to board) bΘ JB22.4°C/W
Thermal resistance (junction to case) bΘ JC6.8°C/W
Thermal metric (junction to top of package)Ψ JT0.2°C/W
Thermal metric (junction to board)Ψ JB22.1°C/W
Junction temperature formulaT JT C + (P • Ψ JT ) c T PCB + (P • Ψ JB ) d T A + (P • Θ JA ) e T B + (P • Θ JB ) fg°C
  • d. T PCB is the temperature of the board acquired by following the steps listed in the EAI/JESD 51-8 standard summarized in the Semiconductor and IC Package Thermal Metrics Application Report (literature number SPRA953). P is the device power consumption.
  • e. Because Θ JA is highly variable and based on factors such as board design, chip/pad size, altitude, and external ambient temperature, it is recommended that equations containing Ψ JT and Ψ JB be used for best results.

f. T B is temperature of the board.

  • g. Θ JB is not a pure reflection of the internal resistance of the package because it includes the resistance of the testing board and environment. It is recommended that equations containing Ψ JT and Ψ JB be used for best results.

TM4C129ENCPDT Ordering Information

No ordering information table was found in the provided datasheet section. The text covers memory system ordering of memory accesses (Device and Strongly Ordered memory behavior) and contains no part numbers, ordering codes, package types, or temperature ranges.

Variants on the same datasheet

These parts have exact links to the same datasheet. They are candidates to compare, not verified drop-in replacements; check package, pinout and electrical limits.

Part NumberManufacturerPackage
TM4C129Texas Instruments—

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Data on this page is extracted from publicly available manufacturer datasheets using automated tools including AI. It may contain errors or omissions. Always verify specifications against the official manufacturer datasheet before making design or purchasing decisions. See our Terms of Service. Rights holders can submit a takedown request.

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