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DRV8320R

Three-Phase Smart Gate Driver

The DRV8320R is a three-phase smart gate driver from Texas Instruments. View the full DRV8320R datasheet below including key specifications, electrical characteristics, absolute maximum ratings.

DRV8320R shares its datasheet with DRV8323, whose page lists every part number it covers.

Official DRV8320R datasheet (PDF) — the source this page was extracted from.

Manufacturer

Texas Instruments

Package

VQFN-40 6x6mm

DRV8320R Key Specifications

ParameterValue
Ambient Temperature Range High125 °C
ApplicationsBrushless DC (BLDC)
Case/PackageVQFN
Output Current5mA
FunctionController - Commutation, Direction Management
Height1 mm
InterfaceSPI
Length7 mm
Lifecycle StatusProduction (Last Updated: 2 days ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 2 days ago)
Max Junction Temperature (Tj)150 °C
Max Operating Temperature125 °C
Max Supply Voltage60 V
Min Operating Temperature-40 °C
Min Supply Voltage4 V
Motor Type (DC)Brushless DC (BLDC)
Motor Type (Stepper)Multiphase
Mounting TypeSurface Mount
Nominal Supply Current10.5 mA
Number of Pins48
Operating Temperature-40°C ~ 125°C (TA)
Output ConfigurationPre-Driver - Half Bridge (3)
Output Current5 mA
Package / Case48-VFQFN Exposed Pad
PackagingMouseReel
RoHSCompliant
Standard Pack Qty2500
Supplier Device Package48-VQFN (7x7)
Switching Frequency700 kHz
Diode TechnologyPower MOSFET
Thickness900 µm
Supply Voltage6V ~ 60V
Width7 mm

DRV8320R Overview

Part: DRV8323R (DRV8323RS / DRV8323RH) — Texas Instruments

Type: Three-Phase Smart Gate Driver with Current Sense Amplifiers and Integrated Buck Regulator

Description: 6–60 V three-phase smart gate driver with up to 1 A source / 2 A sink peak gate current, three integrated current sense amplifiers, and a 600 mA buck regulator.

Operating Conditions:

  • Gate driver supply voltage (VM): 6–60 V
  • Buck regulator supply voltage (VIN): 4–60 V
  • Operating ambient temperature: -40 to 125 °C
  • Applied PWM frequency (INHx, INLx): up to 200 kHz
  • External DVDD load current: up to 30 mA

Absolute Maximum Ratings:

  • Max supply voltage (VM): 65 V
  • Max buck supply voltage (VIN): 65 V
  • Max operating junction temperature: 150 °C
  • Storage temperature: -65 to 150 °C

Key Specs:

  • Gate driver supply range: 6–60 V (VM)
  • Peak gate drive current: 10 mA to 1 A source, 20 mA to 2 A sink
  • Buck regulator output: 0.8 to 60 V, 600 mA
  • Current sense amplifier gain: 5, 10, 20, 40 V/V (adjustable), bidirectional or unidirectional
  • Sleep mode current: 12 μA (typical)
  • DVDD linear regulator: 3.3 V, 30 mA
  • Logic inputs: 1.8 V, 3.3 V, and 5 V supported
  • Input PWM modes: 6x, 3x, 1x, and independent

Features:

  • Triple half-bridge gate driver for N-channel MOSFETs
  • Smart Gate Drive architecture with adjustable slew rate control
  • Integrated high-side charge pump and low-side linear regulator
  • Supports 100% PWM duty cycle
  • Integrated buck regulator (LMR16006X SIMPLE SWITCHER)
  • Three integrated current sense amplifiers
  • SPI and hardware interface variants
  • Protection: VM UVLO, charge pump UV, MOSFET OCP, gate driver fault, thermal warning and shutdown
  • nFAULT fault indicator

Applications:

  • Brushless-DC (BLDC) and PMSM motor modules
  • Fans, pumps, and servo drives
  • E-bikes, e-scooters, and e-mobility
  • Cordless garden and power tools, lawnmowers
  • Cordless vacuum cleaners
  • Drones, robotics, and RC toys
  • Industrial and logistics robots

Package:

  • VQFN (48), 7.00 mm × 7.00 mm (DRV8323R)

DRV8320R Features

  • Triple Half-Bridge Gate Driver
  • -Drives 3 High-Side and 3 Low-Side N-Channel MOSFETs (NMOS)
  • Smart Gate Drive Architecture
  • -Adjustable Slew Rate Control
  • -10-mA to 1-A Peak Source Current
  • -20-mA to 2-A Peak Sink Current
  • Integrated Gate Driver Power Supplies
  • -Supports 100% PWM Duty Cycle
  • -High-Side Charge Pump
  • -Low-Side Linear Regulator
  • 6 to 60-V Operating Voltage Range
  • Optional Integrated Buck Regulator
  • -LMR16006X SIMPLE SWITCHER ®
  • -4 to 60-V Operating Voltage Range
  • -0.8 to 60-V, 600-mA Output Capability
  • Optional Integrated Triple Current Sense Amplifiers (CSAs)
  • -Adjustable Gain (5, 10, 20, 40 V/V)
  • -Bidirectional or Unidirectional Support
  • SPI and Hardware Interface Available
  • 6x, 3x, 1x, and Independent PWM Modes
  • Supports 1.8-V, 3.3-V, and 5-V Logic Inputs
  • Low-Power Sleep Mode (12 μA)
  • Linear Voltage Regulator, 3.3 V, 30 mA
  • Compact QFN Packages and Footprints
  • Efficient System Design With Power Blocks
  • Integrated Protection Features
  • -VM Undervoltage Lockout (UVLO)
  • -Charge Pump Undervoltage (CPUV)
  • -MOSFET Overcurrent Protection (OCP)
  • -Gate Driver Fault (GDF)
  • -Thermal Warning and Shutdown (OTW/OTSD)
  • -Fault Condition Indicator (nFAULT)

DRV8320R Applications

  • Brushless-DC (BLDC) Motor Modules and PMSM
  • Fans, Pumps, and Servo Drives
  • E-Bikes, E-Scooters, and E-Mobility
  • Cordless Garden and Power Tools, Lawnmowers
  • Cordless Vacuum Cleaners
  • Drones, Robotics, and RC Toys
  • Industrial and Logistics Robots

DRV8320R Pin Configuration

Pin Functions-32-Pin DRV8320 Devices

PIN - NAMEPIN - NO. - DRV8320HPIN - NO. - DRV8320STYPE (1)DESCRIPTION
AGND2323PWRDevice analog ground. Connect to system ground.
CPH11PWRCharge pump switching node. Connect aX5R or X7R, 47-nF, VM-rated ceramic capacitor betweentheCPH and CPLpins.
CPL3232PWRCharge pump switching node. Connect aX5R or X7R, 47-nF, VM-rated ceramic capacitor betweentheCPH and CPLpins.
DVDD2424PWR3.3-V internal regulator output. Connect aX5R or X7R, 1-μF, 6.3-V ceramic capacitor betweentheDVDD andAGND pins. This regulator can source up to 30 mAexternally.
ENABLE2222IGate driver enable. When this pin is logic lowthe device goes to a low-power sleep mode. An8to 40-μs pulse can be used to reset fault conditions.
GHA55OHigh-side gate driver output. Connect to the gate of the high-side power MOSFET.
GHB1212OHigh-side gate driver output. Connect to the gate of the high-side power MOSFET.
GHC1313OHigh-side gate driver output. Connect to the gate of the high-side power MOSFET.

Pin Functions-32-Pin DRV8320 Devices

DRV8320R Electrical Characteristics

at TA = -40°C to +125°C, VVM = 6 to 60 V (unless otherw ise noted)

PARAMETERTEST CONDITIONSMINTYPMAXUNIT
POWERSUPPLIES (DVDD, VCP, VM)POWERSUPPLIES (DVDD, VCP, VM)POWERSUPPLIES (DVDD, VCP, VM)POWERSUPPLIES (DVDD, VCP, VM)POWERSUPPLIES (DVDD, VCP, VM)POWERSUPPLIES (DVDD, VCP, VM)POWERSUPPLIES (DVDD, VCP, VM)
I VMVM operating supply currentV VM = 24 V, ENABLE = 3.3 V, INHx/INLx = 0 V10.514mA
IVM sleep mode supply currentENABLE = 0 V, V VM = 24 V, T A = 25°C1220μA
VMQENABLE = 0 V, V VM = 24 V, T A = 125°C (1)50
t RST (1)Reset pulse timeENABLE = 0 V period to reset faults840μs
t WAKE tTurnon timeV VM > V UVLO , ENABLE = 3.3 V to outputs ready mode1 1ms
SLEEPTurnoff time DVDD regulatorENABLE = 0 V to device sleepms
V DVDDvoltageI DVDD = 0 to 30 mA33.33.6V
V VCPVCP operating voltage with respect to VMV VM = 13 V, I VCP = 0 to 25 mA V VM = 10 V, I VCP = 0 to 20 mA V VM = 8 V, I VCP = 0 to 15mA8.4 6.3 5.411 9 712.5 10 8V
LOGIC-LEVELINPUTS V IL(CAL, ENABLE, INHx, Input logic lowvoltage Input logic highvoltage Input logic hysteresisV VM = 6 V, I VCP = 0 to 10mA INLx, nSCS, SCLK, SDI)45 1006 0.8 5.5
V IH VInput logic lowcurrent Input logic highcurrent Pulldown resistance Propagation delay INPUTS (GAIN,V VIN = 0 V V VIN = 5 V Hi-Z Tied to DVDD0 1.5 -50.5 1.1V V
HYS I IL I IH R PD t PD V I1 V I2Input mode 1 voltage Input mode 2 voltageInternal pullup to DVDD3.3 50 84V
V I3 V I4Input mode 4 voltage Pullup resistanceHi-Z 75 k Ω ± 5%tied to DVDD50 100 150 0
V I1 V I2 V I3Pulldown resistanceInternal pulldown to AGND1.2 2V V mV
(nFAULT, SDO)Tied to AGND2.25 70
V I4 V I5 V I6(IDRIVE, Input mode 1 voltage Input mode 2 voltage Input mode 3 voltage Input mode 4 voltage Input mode 5 voltage Input mode 6 voltage45 k Ω ± 5%to2.8 3.3 73 73μA μA k Ω
Input mode 3 voltageI O = 5 mA
To AGND INHx/INLx transition to GHx/GLx transition
-2ns
FOUR-LEVEL H/W MODE)FOUR-LEVEL H/W MODE)FOUR-LEVEL H/W MODE)
Tied to AGND
tied AGND
FOUR-LEVEL H/W MODE)FOUR-LEVEL H/W MODE)FOUR-LEVEL H/W MODE)FOUR-LEVEL H/W MODE)
V
R PUk Ω
R PDPulldown resistanceInternal pulldown to AGNDk Ω
SEVEN-LEVELH/WINPUTS VDS)SEVEN-LEVELH/WINPUTS VDS)SEVEN-LEVELH/WINPUTS VDS)
18 k Ω ± 5%tied to AGND
75 k Ω ± 5%tied to AGND
18 k Ω ± 5%tied to DVDD
SEVEN-LEVELH/WINPUTS VDS)SEVEN-LEVELH/WINPUTS VDS)
0
1.65
SEVEN-LEVELH/WINPUTS VDS)SEVEN-LEVELH/WINPUTS VDS)
V
V
V
V
V
V
V I7Input mode 7 voltageTied to DVDDV
R PUPullup resistanceInternal pullup to DVDDk Ω
R PDk Ω
OPENDRAIN OUTPUTSOPENDRAIN OUTPUTSOPENDRAIN OUTPUTSOPENDRAIN OUTPUTSOPENDRAIN OUTPUTSOPENDRAIN OUTPUTSOPENDRAIN OUTPUTS
V OLOutput logic lowvoltage0.1V
I OZOutput high impedance leakageV O = 5 V2μA

at TA = -40°C to +125°C, VVM = 6 to 60 V (unless otherw ise noted)

PARAMETERPARAMETERTEST CONDITIONSTYPMAXUNIT
MIN GATE DRIVERS (GHx, GLx)MIN GATE DRIVERS (GHx, GLx)MIN GATE DRIVERS (GHx, GLx)MIN GATE DRIVERS (GHx, GLx)MIN GATE DRIVERS (GHx, GLx)MIN GATE DRIVERS (GHx, GLx)MIN GATE DRIVERS (GHx, GLx)MIN GATE DRIVERS (GHx, GLx)
V VM = 13 V, I VCP = 0 to 25 mA1112.5V
V (1)V VM = 10 , I VCP = 0 to 20mA910V
GSHV VM = 8 V, I VCP = 0 to 15mA78V
V VM = 6 V, I VCP = 0 to 10mA56V
V VM = 12 V, I VGLS = 0 to 25mA1112V
V (1)V VM = 10 V, I VGLS = 0 to 20mA910V
GSLV VM = 8 V, I VGLS = 0 to 15 mA78V
V VM = 6 V, I VGLS = 0 to 10 mA56V
t DEADDEAD_TIME = 00b
DEAD_TIME = 01b
DEAD_TIME = 10b
DEAD_TIME = 11b
50
100
200
400
100
ns
ns
ns
ns
ns
t DRIVETDRIVE = 00b
TDRIVE = 01b
TDRIVE = 10b
TDRIVE = 11b
500
1000
2000
4000
4000
ns
ns
ns
ns
I DRIVEPIDRIVEP_HS orIDRIVEP_LS = 0000b
IDRIVEP_HS orIDRIVEP_LS = 0001b
IDRIVEP_HS orIDRIVEP_LS = 0010b
IDRIVEP_HS orIDRIVEP_LS = 0011b
IDRIVEP_HS orIDRIVEP_LS = 0100b
IDRIVEP_HS orIDRIVEP_LS = 0101b
IDRIVEP_HS orIDRIVEP_LS = 0110b
IDRIVEP_HS orIDRIVEP_LS = 0111b
IDRIVEP_HS orIDRIVEP_LS = 1000b
IDRIVEP_HS orIDRIVEP_LS = 1001b
IDRIVEP_HS orIDRIVEP_LS = 1010b
IDRIVEP_HS orIDRIVEP_LS = 1011b
IDRIVEP_HS orIDRIVEP_LS = 1100b
IDRIVEP_HS orIDRIVEP_LS = 1101b
IDRIVEP_HS orIDRIVEP_LS = 1110b
IDRIVEP_HS orIDRIVEP_LS = 1111b
IDRIVE = Tied to AGND
IDRIVE = 18 k Ω ± 5% tied to AGND
IDRIVE = 75 k Ω ± 5% tied to AGND
Device IDRIVE = Hi-Z
IDRIVE = 75 k Ω ± 5%tied to DVDD
IDRIVE = 18 k Ω ± 5%tied to DVDD
IDRIVE = Tied to DVDD
10
30
60
80
120
140
170
190
260
330
370
440
570
680
820
1000
10
30
60
120
260
570
1000
mA

at TA = -40°C to +125°C, VVM = 6 to 60 V (unless otherw ise noted)

at TA = -40°C to +125°C, VVM = 6 to 60 V (unless otherw ise noted)

PARAMETERTEST CONDITIONSMIN TYPMAX
I DRIVENIDRIVEN_HS orIDRIVEN_LS = 0000b
IDRIVEN_HS orIDRIVEN_LS = 0001b
IDRIVEN_HS orIDRIVEN_LS = 0010b
IDRIVEN_HS orIDRIVEN_LS = 0011b
IDRIVEN_HS orIDRIVEN_LS = 0100b
IDRIVEN_HS orIDRIVEN_LS = 0101b
IDRIVEN_HS orIDRIVEN_LS = 0110b
IDRIVEN_HS orIDRIVEN_LS = 0111b
IDRIVEN_HS orIDRIVEN_LS = 1000b
IDRIVEN_HS orIDRIVEN_LS = 1001b
IDRIVEN_HS orIDRIVEN_LS = 1010b
20
60
120
160
240
280
340
380
520
660
740
UNIT
IDRIVEN_HS orIDRIVEN_LS = 1011b
IDRIVEN_HS orIDRIVEN_LS = 1100b
IDRIVEN_HS orIDRIVEN_LS = 1101b
IDRIVEN_HS orIDRIVEN_LS = 1110b
IDRIVEN_HS orIDRIVEN_LS = 1111b
IDRIVE = Tied to AGND
IDRIVE = 18 k Ω ± 5% tied to AGND
IDRIVE = 75 k Ω ± 5% tied to AGND
Device IDRIVE = Hi-Z
IDRIVE = 75 k Ω ± 5%tied to DVDD
IDRIVE = 18 k Ω ± 5%tied to DVDD
IDRIVE = Tied to DVDD
880
1140
1360
1640
2000
20
60
120
240
520
1140
2000
mA
I HOLDGate holding currentSource current after t DRIVE10mA
I HOLDSink current after t DRIVE50mA
I STRONGGate strong pulldown currentGHx to SHx and GLxto PGND2A
R OFFGate hold off resistorGHx to SHx and GLxto PGND150k Ω
G CSACSA_GAIN=00b4.85
5
5.15V/V
CSA_GAIN=01b9.7 10
20
10.3
CSA_GAIN=10b19.420.6
CSA_GAIN=11b38.8 4041.2
GAIN= Tied to AGND
Device GAIN= 47 k Ω ± 5%tied to AGND
4.85 5 10
9.7
5.15 10.3
GAIN= Hi-Z19.4 2020.6
GAIN= Tied to DVDD
V O_STEP = 0.5 V, G CSA = 5 V/V
38.8 40
150
41.2
t SET (1)V O_STEP = 0.5 V, G VSA = 20 V/V
V O_STEP = 0.5 V, G CSA = 40 V/V
600
1200
ns
V COMCommon modeinput rangeCommon modeinput range-0.150.15V
V DIFFDifferentialmode inputrangeDifferentialmode inputrange-0.30.3V
V OFFInput offset errorV SP = V SN = 0 V, CAL = 3.3 V,VREF = 3.3 V-44mV
V DRIFT (1)Drift offsetV SP = V SN = 0 V10μV/°C
V LINEARSOxoutput voltagelinearrangeSOxoutput voltagelinearrange0.25V VREF - 0.25V

at TA = -40°C to +125°C, VVM = 6 to 60 V (unless otherw ise noted)

PARAMETERPARAMETERPARAMETERTEST CONDITIONSMINMAXUNIT
V SP = V SN = 0 V, CAL = 3.3 V, VREF_DIVTYP - 0.3V
V BIASSOxoutput voltage
bias
SPI Device= 0b V SP = V SN = 0 V, CAL = 3.3 V, VREF_DIV = 1bV VREF V VREF / 2
V / 2
V
V
H/W DeviceV SP = V SN = 0 V, CAL = 3.3 VVREFV
I BIASSPx/SNx input biascurrentSPx/SNx input biascurrentVREF_DIV = 1b100μA
V SLEW (1)SOxoutput slew rateSOxoutput slew rate60-pF load10V/μs
I VREFVREF input currentVREF input currentV VREF = 5 V23mA
UGB (1)Unity gain bandwidthUnity gain bandwidth60-pF load1MHz
PROTECTION CIRCUITSPROTECTION CIRCUITSPROTECTION CIRCUITSPROTECTION CIRCUITSPROTECTION CIRCUITSPROTECTION CIRCUITSPROTECTION CIRCUITSPROTECTION CIRCUITS
VM falling, UVLOreport5.4 5.65.8V
V UVLOVM undervoltage lockoutVM undervoltage lockoutVM rising, UVLOrecovery5.6 5.86V
V UVLO_HYSVM undervoltage hysteresisVM undervoltage hysteresisRising to falling threshold200mVV
t UVLO_DEGVM undervoltage deglitch timeVM undervoltage deglitch timeVM falling, UVLOreport10μsV
V CPUVCharge pump undervoltage lockoutCharge pump undervoltage lockoutVCP falling,CPUV reportV VM + 2.8VV
VHigh-side gate clampHigh-side gate clampPositive clamping voltage15 16.518V
GS_CLAMPSPI DeviceNegative clampingvoltage
VDS_LVL = 0000b
VDS_LVL = 0001b
VDS_LVL = 0010b
VDS_LVL = 0011b
VDS_LVL = 0100b
VDS_LVL = 0101b
VDS_LVL = 0110b
VDS_LVL = 0111b
VDS_LVL = 1000b
VDS_LVL = 1001b
VDS_LVL = 1010b
-0.7
0.06
0.13
0.2
0.26
0.31
0.45
0.53
0.6
0.68
0.75
0.94
V
V VDS_OCPV DS overcurrent trip voltageH/W DeviceVDS_LVL = 1011b
VDS_LVL = 1100b
VDS_LVL = 1101b
VDS_LVL = 1110b
VDS_LVL = 1111b
VDS = Tied to AGND
VDS = 18 k Ω ± 5%tied to AGND
VDS = 75 k Ω ± 5%tied to AGND
VDS = Hi-Z
VDS = 75 k Ω ± 5%tied to DVDD
VDS = 18 k Ω ± 5%tied to DVDD
VDS = Tied to DVDD
OCP_DEG=00b
1.13
1.3
1.5
1.7
1.88
0.06
0.13
0.26
0.6
1.13
1.88
Disabled
2
V
t OCP_DEGV DS and V SENSE overcurrent
deglitchtime
H/W DeviceOCP_DEG=11b4 6
8
4
μs

at TA = -40°C to +125°C, VVM = 6 to 60 V (unless otherw ise noted)

PARAMETERTEST CONDITIONSMINTYPMAXUNIT
SPI DeviceSEN_LVL = 00b
SEN_LVL = 01b
0.25
0.5
V SEN_OCP V SENSE trip voltageovercurrent
H/W
DeviceSEN_LVL = 10b
SEN_LVL = 11b
0.75
1
1
V
t RETRYOvercurrent retrySPI DeviceTRETRY = 0b4ms
timeH/W DeviceTRETRY = 1b50
4
μ s
ms
T OTW (1)Thermal warningtemperatureDie temperature, T J130150165°C
T OTSD (1)Thermal shutdown temperatureDie temperature, T J150170185°C
T HYS (1)Thermal hysteresisDie temperature, T J20°C
BUCK REGULATOR SUPPLY (VIN)
I nSHDNShutdown supply currentV nSHDN = 0 V13μA
I QOperating quiescent currentV VIN = 12 V, no load; not switching28μA
V VIN_UVLOVINundervoltagelockoutVIN Rising4V
thresholdVINFalling3
BUCK REGULATOR SHUTDOWN (nSHDN)
V nSHDN_THRising nSHDNthreshold1.051.251.38V
I nSHDNInput currentV nSHDN = 2.3 V
V nSHDN = 0.9 V
-4.2
-1
μA
I nSHDN_HYSHysteresis current-3μA
BUCK REGULATOR HIGH-SIDE MOSFET
R DS_ONMOSFET on resistanceV VIN = 12 V, V CB to V SW = 5.8 V, T A = 25°C900m Ω
BUCK REGULATOR VOLTAGE REFERENCE (FB)
V FBFeedbackvoltage0.7470.7650.782V
BUCK REGULATOR CURRENT LIMIT
I LIMITPeak current limitV VIN = 12 V, T A = 25°C12001700mA
BUCK REGULATOR SWITCHING (SW)
f SWSwitching frequency595700805kHz
D MAXMaximumdutycycle96%
BUCK REGULATOR THERMAL SHUTDOWN
T SHDN (1)Thermal shutdown threshold170°C
T HYS (1)Thermal shutdownhysteresis10°C

DRV8320R Absolute Maximum Ratings

at TA = -40°C to +125°C (unless otherw ise noted) (1)

MINMAXUNIT
GATE DRIVER
Powersupply pin voltage (VM)-0.365V
Voltage differentialbetween ground pins(AGND, BGND, DGND, PGND)-0.30.3V
MOSFET drain sense pin voltage (VDRAIN)-0.365V
Charge pump pin voltage(CPH, VCP)-0.3V VM + 13.5V
Charge pump negative-switching pinvoltage(CPL)-0.3V VMV
Internal logic regulator pinvoltage (DVDD)-0.33.8V
Digital pin voltage (CAL, ENABLE,GAIN, IDRIVE, INHx, INLx, MODE,nFAULT, nSCS, SCLK, SDI, SDO, VDS)-0.35.75V
Continuoushigh-side gate drivepinvoltage (GHx)-5 (2)V VCP + 0.5V
Transient 200-nshigh-side gate drive pin voltage (GHx)-7V VCP + 0.5V
High-side gate drive pinvoltage withrespect to SHx(GHx)-0.313.5V
Continuoushigh-side source sense pin voltage(SHx)-5 (2)V VM + 5V
Transient 200-nshigh-side source sense pin voltage (SHx)-7V VM + 7V
Continuouslow-side gate drivepin voltage (GLx)-0.513.5V
Gate drive pin source current (GHx, GLx)Internally limitedInternally limitedA
Gate drive pin sinkcurrent (GHx, GLx)Internally limitedInternally limitedA
Continuouslow-side source sense pin voltage(SLx)-11V
Transient 200-nslow-side source sense pin voltage (SLx)-33V
Continuousinput pinvoltage (SNx, SPx)-11V
Transient 200-nsinput pin voltage (SNx, SPx)-33V
Reference input pin voltage(VREF)-0.35.75V
output pin voltage(SOx)-0.3V VREF + 0.3V
BUCK REGULATOR
Powersupply pin voltage (VIN)-0.365V
Shutdown control pin voltage (nSHDN)-0.3V VINV
Voltage feedbackpin voltage (FB)-0.37V
Bootstrap pin voltagewith respect to SW(CB)-0.37V
Switching node pinvoltage(SW)-0.3V VINV
Switching node pinvoltagelessthan 30-nstransients(SW)-2V VINV
DRV832x
Operating junctiontemperature, T J-40150°C
Storage temperature, T stg-65150°C

at TA = -40°C to +125°C (unless otherw ise noted)

MINMAXUNIT
GATE DRIVERGATE DRIVER
V VMPowersupply voltage (VM)660V
V IInput voltage(CAL, ENABLE, GAIN, IDRIVE, INHx, INLx, MODE,nSCS, SCLK, SDI, VDS)05.5V
f PWMAppliedPWM signal (INHx, INLx)0200 (1)kHz
I GATE_HSHigh-side average gate drivecurrent (GHx)025 (1)mA
I GATE_LSLow-side average gate drive current (GLx)025 (1)mA
I DVDDExternal loadcurrent (DVDD)030 (1)mA
V VREFReference voltageinput (VREF)35.5V
I SOoutput current (SOx)05mA
V ODOpen drain pullupvoltage(nFAULT, SDO)05.5V
I ODOpen drain output current (nFAULT, SDO)05mA
BUCK REGULATORBUCK REGULATOR
V VINPowersupply voltage (VIN)460V
V nSHDNShutdown control input voltage(nSHDN)060V
DRV832xDRV832x
T AOperating ambient temperature-40125°C

DRV8320R Thermal Information

THERMAL METRIC (1)DRV832x - RTV (WQFN) - 32 PINSDRV832x - RHA (VQFN) - 40 PINSDRV832x - RTA (WQFN) - 40 PINSDRV832x - RGZ (VQFN) - 48 PINSUNIT
R θ JAJunction-to-ambient thermal resistance32.930.132.126.6°C/W
R θ JC(top)Junction-to-case (top) thermal resistance15.816.71113.9°C/W
R θ JBJunction-to-board thermal resistance6.89.97.19.2°C/W
ψ JTJunction-to-topcharacterization parameter0.20.50.10.3°C/W
ψ JBJunction-to-board characterizationparameter6.89.97.19.1°C/W
R θ JC(bot)Junction-to-case (bottom) thermal resistance2.12.22.12°C/W

DRV8320R Typical Application

The DRV832x family of devices is primarily used in applications for three-phase brushless DC motor control. The design procedures in the Typical Application section highlight how to use and configure the DRV832x family of devices.

DRV8320R Package Information

PLASTIC QUAD FLATPACK - NO LEAD

  1. All linear dimensions are in millimeters. Any dimensions in parenthesis are for reference only. Dimensioning and tolerancing per ASME Y14.5M.
  2. This drawing is subject to change without notice.
  3. The package thermal pad must be soldered to the printed circuit board for thermal and mechanical performance.

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PLASTIC QUAD FLATPACK - NO LEAD

NOTES: (continued)

  1. This package is designed to be soldered to a thermal pad on the board. For more information, see Texas Instruments literature number SLUA271 (www.ti.com/lit/slua271).
  2. Vias are optional depending on application, refer to device data sheet. If any vias are implemented, refer to their locations shown on this view. It is recommended that vias under paste be filled, plugged or tented.

PLASTIC QUAD FLATPACK - NO LEAD

NOTES: (continued)

6.Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525 may have alternate design recommendations.

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7 x 7, 0.5 mm pitch PLASTIC QUADFLAT PACK- NO LEAD

Variants on the same datasheet

These parts have exact links to the same datasheet. They are candidates to compare, not verified drop-in replacements; check package, pinout and electrical limits.

Part NumberManufacturerPackage
DRV8320Texas InstrumentsWQFN-32 5x5mm
DRV8323Texas InstrumentsWQFN-40 6x6mm
DRV8323HTexas InstrumentsWQFN (40)
DRV8323HRTARTexas Instruments40-WFQFN Exposed Pad
DRV8323HRTATTexas InstrumentsWQFN-40
DRV8323RTexas InstrumentsVQFN-48 7x7mm
DRV8323RHTexas InstrumentsVQFN (48)
DRV8323RSTexas InstrumentsWQFN (32)
DRV8323RSRGZRTexas Instruments48-VFQFN Exposed Pad
DRV8323STexas InstrumentsWQFN (40)
DRV8323SRTARTexas InstrumentsWQFN-40
DRV8323SRTATTexas InstrumentsWQFN-40
DRV8323XSTexas Instruments—

Other Integrated Circuits

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