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STM32G474RBT6

The STM32G474RBT6 is an electronic component from STMicroelectronics. View the full STM32G474RBT6 datasheet below including key specifications, electrical characteristics, absolute maximum ratings.

STM32G474RBT6 shares its datasheet with STM32G474CB, whose page lists every part number it covers.

Official STM32G474RBT6 datasheet (PDF) — the source this page was extracted from.

Manufacturer

STMicroelectronics

Package

64-LQFP

Lifecycle

Production (Last Updated: 4 months ago)

STM32G474RBT6 Key Specifications

ParameterValue
ADC Channels (Resolution)26-Ch 12-Bit
Case/PackageLFQFP
China RoHSCompliant
ConnectivityCANbus, I2C, IrDA, LINbus, QSPI, SPI, UART/USART
Core ArchitectureARM Cortex-M4
Core ProcessorARM® Cortex®-M4F
Core Size32-Bit
DAC Channels (Resolution)3-Ch 12-Bit
Data ConvertersA/D 26x12b; D/A 7x12b
DigiKey ProgrammableNot Verified
EEPROM Memory Size0 B
Flash Memory Size128 kB
Frequency170 MHz
Height - Seated (Max)1.6 mm
InterfaceQSPI, SPI, USB
Introduction Date2019-10-24
Length10 mm
Lifecycle StatusProduction (Last Updated: 4 months ago)
Max Frequency48 MHz
Max Operating Temperature85 °C
Max Supply Current42 mA
Max Supply Voltage3.6 V
Memory TypeFLASH
Min Operating Temperature-40 °C
Min Supply Voltage1.71 V
Mounting TypeSurface Mount
Number of A/D Converters5
Number of Channels26
Number of D/A Converters3
Number of I/O52
Number of I/Os6
Number of I2C Channels4
Number of Interrupts16
Number of SPI Channels3
Number of Terminals64
Number of Timers/Counters15
Number of UART Channels2
Number of USART Channels3
Operating Supply Voltage1.8 V
Operating Temperature-40°C ~ 85°C (TA)
Oscillator TypeInternal
Package / Case64-LQFP
PackagingTray
PeripheralsBrown-out Detect/Reset, DMA, I2S, POR, PWM, WDT
PeripheralsPOR, PWM
Flash Memory Size128KB (128K x 8)
Program Memory TypeFLASH
RAM Size128K x 8 B
RAM Size128 kB
REACH SVHCYes
RoHSCompliant
Clock Speed170MHz
Standard Pack Qty960
Supplier Device Package64-LQFP (10x10)
Terminal Pitch500 µm
Supply Voltage1.71V ~ 3.6V
Width10 mm

STM32G474RBT6 Overview

Part: STM32G474xB/xC/xE — STMicroelectronics

Type: Arm Cortex-M4 32-bit MCU with FPU

Description: 170 MHz (213 DMIPS) Arm Cortex-M4 MCU with FPU, up to 512 KB Flash and 128 KB SRAM, 1.71–3.6 V supply, rich analog (5 ADCs, 7 DACs, 7 comparators, 6 op-amps) and a 184 ps resolution high-resolution timer.

Operating Conditions:

  • Supply voltage (VDD): 1.71–3.6 V
  • Operating temperature: -40 to 85 °C (suffix 6; suffix 3 version is -40 to 125 °C)
  • Max CPU/AHB/APB clock: 170 MHz
  • Analog supply (VDDA): 1.62–3.6 V with ADC in use; 1.8–3.6 V with DAC/OPAMP/COMP; 2.4–3.6 V with VREFBUF
  • VBAT: 1.55–3.6 V

Absolute Maximum Ratings:

  • Max supply voltage (VDD – VSS): 4.0 V (min -0.3 V)
  • Max input voltage on FT_c pins: 5.5 V
  • Max current into sum of all VDD lines: 150 mA
  • Max current into each VDD pin: 100 mA
  • Max output current sunk or sourced by any I/O pin: 20 mA
  • Max junction temperature: 150 °C
  • Storage temperature: -65 to +150 °C

Key Specs:

  • Core clock: up to 170 MHz (0-wait-state Flash execution via ART Accelerator)
  • VDD range: 1.71–3.6 V
  • Junction temperature range: -40 to 105 °C (suffix 6), -40 to 130 °C (suffix 3)
  • Maximum I/O input voltage (all I/O except TT_xx and FT_c): MIN(MIN(VDD, VDDA)+3.6 V, 5.5 V)
  • Total output current sunk or sourced by all I/Os: 100 mA each
  • Injected current on FT_xxx, TT_xx, NRST pins: -5/0 mA; total ±25 mA
  • Memory: 512 KB Flash with ECC; 96 KB SRAM plus 32 KB CCM SRAM
  • Up to 107 fast I/Os

Features:

  • Arm Cortex-M4 with FPU, MPU, DSP instructions and ART Accelerator
  • CORDIC and FMAC math accelerators
  • 5 × 12-bit ADCs (0.25 μs, up to 42 channels, up to 16-bit with oversampling)
  • 7 × 12-bit DAC channels, 7 × rail-to-rail comparators, 6 × op-amps with PGA mode
  • Internal voltage reference buffer (2.048 V, 2.5 V, 2.95 V)
  • HRTIM with 184 ps resolution and 12 PWM channels, 17 timers in total
  • 3 × FDCAN, 4 × I2C Fast mode plus, 5 × USART/UART, 1 × LPUART, 4 × SPI, SAI, USB 2.0 full-speed, UCPD
  • FSMC and Quad-SPI memory interfaces
  • Low-power modes: sleep, stop, standby, shutdown; VBAT supply for RTC and backup registers
  • 16-channel DMA, RNG, CRC unit, 96-bit unique ID
  • SWD, JTAG and Embedded Trace Macrocell debug

Applications:

  • Motor control and digital power conversion

Package:

  • UFQFPN48
  • LQFP48
  • LQFP64
  • LQFP80
  • LQFP100
  • LQFP128
  • WLCSP81
  • TFBGA100
  • UFBGA121

STM32G474RBT6 Features

  • Core: Arm ® 32-bit Cortex ® -M4 CPU with FPU, Adaptive real-time accelerator (ART Accelerator) allowing 0-wait-state execution from Flash memory, frequency up to 170 MHz with 213 DMIPS, MPU, DSP instructions
  • Operating conditions:
  • -VDD , V DDA voltage range: 1.71 V to 3.6 V
  • Mathematical hardware accelerators
  • -CORDIC for trigonometric functions acceleration
  • -FMAC: filter mathematical accelerator
  • Memories
  • -512 Kbytes of Flash memory with ECC support, two banks read-while-write, proprietary code readout protection (PCROP), securable memory area, 1 Kbyte OTP
  • -96 Kbytes of SRAM, with hardware parity check implemented on the first 32 Kbytes
  • -Routine booster: 32 Kbytes of SRAM on instruction and data bus, with hardware parity check (CCM SRAM)
  • -External memory interface for static memories FSMC supporting SRAM, PSRAM, NOR and NAND memories
  • -Quad-SPI memory interface
  • Reset and supply management
  • -Power-on/power-down reset (POR/PDR/BOR)
  • -Programmable voltage detector (PVD)
  • -Low-power modes: sleep, stop, standby and shutdown
  • -VBAT supply for RTC and backup registers
  • Clock management
  • -4 to 48 MHz crystal oscillator
  • -32 kHz oscillator with calibration
  • -Internal 16 MHz RC with PLL option (± 1%)

DS12288 Rev 5

  • channels, dead time generation and emergency stop
  • -1 x 16-bit timer with 2 x IC/OCs, one OCN/PWM, dead time generation and emergency stop
  • -2 x 16-bit timers with IC/OC/OCN/PWM, dead time generation and emergency stop
  • -2 x watchdog timers (independent, window)
  • -1 x SysTick timer: 24-bit downcounter
  • -2 x 16-bit basic timers
  • -1 x low-power timer
  • Calendar RTC with alarm, periodic wakeup from stop/standby
  • Communication interfaces
  • -3 x FDCAN controller supporting flexible data rate
  • -4 x I 2 C Fast mode plus (1 Mbit/s) with 20 mA current sink, SMBus/PMBus, wakeup from stop
  • -5 x USART/UARTs (ISO 7816 interface, LIN, IrDA, modem control)
  • -1 x LPUART
  • -4 x SPIs, 4 to 16 programmable bit frames, 2 x with multiplexed half duplex I 2 S interface
  • -1 x SAI (serial audio interface)
  • -USB 2.0 full-speed interface with LPM and BCD support
  • -IRTIM (infrared interface)
  • -USB Type-C™ /USB power delivery controller (UCPD)
  • True random number generator (RNG)
  • CRC calculation unit, 96-bit unique ID
  • Development support: serial wire debug (SWD), JTAG, Embedded Trace Macrocell™

Table 1. Device summary

ReferencePart number
STM32G474xBSTM32G474CB, STM32G474MB, STM32G474RB, STM32G474VB, STM32G474QB, STM32G474PB
STM32G474xCSTM32G474CC, STM32G474MC, STM32G474RC, STM32G474VC, STM32G474QC, STM32G474PC
STM32G474xESTM32G474CE, STM32G474ME, STM32G474RE, STM32G474VE, STM32G474QE, STM32G474PE

Table 1. Device summary

STM32G474RBT6 Electrical Characteristics

The definition and values of input/output AC characteristics are given in Figure 26 and Table 56 , respectively.

Unless otherwise specified, the parameters given are derived from tests performed under the ambient temperature and supply voltage conditions summarized in Table 17: General operating conditions .

200

Table 56. I/O (except FT_c) AC characteristics (1) (2)

SpeedSymbolParameterConditionsMinMaxUnit
00FmaxMaximum frequencyC=50 pF, 2.7 V ≤ V DD ≤ 3.6 V-5MHz
00FmaxMaximum frequencyC=50 pF, 1.62 V ≤ V DD ≤ 2.7 V-1MHz
00FmaxMaximum frequencyC=10 pF, 2.7 V ≤ V DD ≤ 3.6 V-10MHz
00FmaxMaximum frequencyC=10 pF, 1.62 V ≤ V DD ≤ 2.7 V-1.5MHz
00Tr/TfOutput rise and fall timeC=50 pF, 2.7 V ≤ V DD ≤ 3.6 V-25ns
00Tr/TfOutput rise and fall timeC=50 pF, 1.62 V ≤ V DD ≤ 2.7 V-52ns
00Tr/TfOutput rise and fall timeC=10 pF, 2.7 V ≤ V DD ≤ 3.6 V-17ns
00Tr/TfOutput rise and fall timeC=10 pF, 1.62 V ≤ V DD ≤ 2.7 V-37ns
01FmaxMaximum frequencyC=50 pF, 2.7 V ≤ V DD ≤ 3.6 V-25MHz
01FmaxMaximum frequencyC=50 pF, 1.62 V ≤ V DD ≤ 2.7 V-10MHz
01FmaxMaximum frequencyC=10 pF, 2.7 V ≤ V DD ≤ 3.6 V-50MHz
01FmaxMaximum frequencyC=10 pF, 1.62 V ≤ V DD ≤ 2.7 V-15MHz
Tr/TfOutput rise and fall timeC=50 pF, 2.7 V ≤ V DD ≤ 3.6 V-9ns
Tr/TfOutput rise and fall timeC=50 pF, 1.62 V ≤ V DD ≤ 2.7 V-16ns
Tr/TfOutput rise and fall timeC=10 pF, 2.7 V ≤ V DD ≤ 3.6 V-4.5ns
Tr/TfOutput rise and fall timeC=10 pF, 1.62 V ≤ V DD ≤ 2.7 V-9ns
10FmaxMaximum frequencyC=50 pF, 2.7 V ≤ V DD ≤ 3.6 V-50MHz
10FmaxMaximum frequencyC=50 pF, 1.62 V ≤ V DD ≤ 2.7 V-25MHz
10FmaxMaximum frequencyC=10 pF, 2.7 V ≤ V DD ≤ 3.6 V-100 (3)MHz
10FmaxMaximum frequencyC=10 pF, 1.62 V ≤ V DD ≤ 2.7 V-37.5MHz
10Tr/TfOutput rise and fall timeC=50 pF, 2.7 V ≤ V DD ≤ 3.6 V-5.8ns
10Tr/TfOutput rise and fall timeC=50 pF, 1.62 V ≤ V DD ≤ 2.7 V-11ns
10Tr/TfOutput rise and fall timeC=10 pF, 2.7 V ≤ V DD ≤ 3.6 V-2.5ns
10Tr/TfC=10 pF, 1.62 V ≤ V DD ≤ 2.7 V-5
11FmaxMaximum frequencyC=30 pF, 2.7 V ≤ V DD ≤ 3.6 V-120 (3)MHz
11FmaxMaximum frequencyC=30 pF, 1.62 V ≤ V DD ≤ 2.7 V-50MHz
11FmaxMaximum frequencyC=10 pF, 2.7 V ≤ V DD ≤ 3.6 V-180 (3)MHz
11FmaxC=10 pF, 1.62 V ≤ V DD ≤ 2.7 V-75
11Tr/TfOutput rise andC=30 pF, 2.7 V ≤ V DD ≤ 3.6 V-3.3ns
11Tr/TfOutput rise andC=30 pF, 1.62 V ≤ V DD ≤ 2.7 V-6ns
11Tr/Tffall time (4)C=10 pF, 2.7 V ≤ V DD ≤ 3.6 V-1.7ns
11Tr/TfC=10 pF, 1.62 V ≤ V DD ≤ 2.7 V-3.3ns

Table 56. I/O (except FT_c) AC characteristics (1) (2)

Table 56. I/O (except FT_c) AC characteristics (1) (2) (continued)

SpeedSymbolParameterConditionsMinMaxUnit
FM+Fmax (5)Maximum frequencyC=50 pF, 1.6 V ≤ V DD ≤ 3.6 V-1MHz
FM+Tr/TF (4)Output high to low level fall timeC=50 pF, 1.6 V ≤ V DD ≤ 3.6 V-5ns
  1. The I/O speed is configured using the OSPEEDRy[1:0] bits. The Fm+ mode is configured in the SYSCFG_CFGR1 register. Refer to the reference manual RM0440 "STM32G4 Series advanced Arm ® based 32-bit MCUs" for a description of GPIO Port configuration register.
  2. Guaranteed by design.
  3. This value represented the I/O capability but maximum system frequency is 170 MHz.
  4. The fall time is defined between 70% and 30% of the output waveform accordingly to I2C specification.
  5. The maximum frequency is defined with the following conditions:
  • 45%<Duty cycle<55%

  • (Tr+ Tf)

≤

2/3 T.

Table 57. I/O FT_c AC characteristics (1) (2)

SpeedSymbolParameterConditionsMinMaxUnit
0FmaxMaximum frequencyC=50 pF, 2.7 V ≤ V DD ≤ 3.6 V-2MHz
0FmaxMaximum frequencyC=50 pF, 1.6 V ≤ V DD ≤ 2.7 V-1MHz
0Tr/TfOutput H/L to L/H level fall timeC=50 pF, 2.7 V ≤ V DD ≤ 3.6 V-170ns
0Tr/TfOutput H/L to L/H level fall timeC=50 pF, 1.6 V ≤ V DD ≤ 2.7 V-330ns
1FmaxMaximum frequencyC=50 pF, 2.7 V ≤ V DD ≤ 3.6 V-10MHz
1FmaxMaximum frequencyC=50 pF, 1.6 V ≤ V DD ≤ 2.7 V-5MHz
1Tr/TfOutput H/L to L/H level fall timeC=50 pF, 2.7 V ≤ V DD ≤ 3.6 V-35ns
1Tr/TfOutput H/L to L/H level fall timeC=50 pF, 1.6 V ≤ V DD ≤ 2.7 V-65ns
  1. The I/O speed is configured using the OSPEEDRy[1:0] bits. The Fm+ mode is configured in the SYSCFG_CFGR1 register. Refer to the reference manual RM0440 "STM32G4 Series advanced Arm ® based 32-bit MCUs" for a description of GPIO Port configuration register.
  2. Guaranteed by design.

200

STM32G474RBT6 Absolute Maximum Ratings

Stresses above the absolute maximum ratings listed in Table 14: Voltage characteristics , Table 15: Current characteristics and Table 16: Thermal characteristics may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these conditions is not implied. Exposure to maximum rating conditions for extended periods may affect device reliability. Exposure to maximum rating conditions for extended periods may affect device reliability. Device mission profile (application conditions) is compliant with JEDEC JESD47 qualification standard, extended mission profiles are available on demand.

Table 14. Voltage characteristics (1)

SymbolRatingsMinMaxUnit
V DD - V SSExternal main supply voltage (including V DD , V DDA , V BAT and V REF+ )-0.34.0V
V IN (2)Input voltage on FT_xxx pins except FT_c pinsV SS -0.3min (V DD ,V DDA ) + 4.0 (3)(4)V
V IN (2)Input voltage on FT_c pinsV SS -0.35.5V
V IN (2)Input voltage on TT_xx pinsV SS -0.34.0V
V IN (2)Input voltage on any other pinsV SS -0.34.0V
| ∆ V DDx |Variations between different V DDX power pins of the same domain-50mV
|V SSx -V SS |Variations between all the different ground pins (5)-50mV
V REF+ -V DDAAllowed voltage difference for V REF+ > V DDA-0.4V

Table 14. Voltage characteristics (1)

  1. VIN maximum must always be respected. Refer to Table 15: Current characteristics for the maximum allowed injected current values.
  2. This formula has to be applied only on the power supplies related to the IO structure described in the pin definition table.
  3. To sustain a voltage higher than 4 V the internal pull-up/pull-down resistors must be disabled.
  4. Include VREF- pin.
  5. This current consumption must be correctly distributed over all I/Os and control pins. The total output current must not be sunk/sourced between two consecutive power supply pins referring to high pin count LQFP packages.
  6. Positive injection (when V IN > V DD ) is not possible on these I/Os and does not occur for input voltages lower than the specified maximum value.
  7. A negative injection is induced by VIN < VSS. IINJ(PIN) must never be exceeded. Refer also to Table 14: Voltage characteristics for the minimum allowed input voltage values.
  8. When several inputs are submitted to a current injection, the maximum ∑ |I INJ(PIN) | is the absolute sum of the negative injected currents (instantaneous values).

Table 15. Current characteristics

SymbolRatingsMaxUnit
∑ IV DDTotal current into sum of all V DD power lines (source) (1)150mA
∑ IV SSTotal current out of sum of all V SS ground lines (sink) (1)150mA
IV DD(PIN)Maximum current into each V DD power pin (source) (1)100mA
IV SS(PIN)Maximum current out of each V SS ground pin (sink) (1)100mA
I IO(PIN)Output current sunk by any I/O and control pin except FT_f20mA
I IO(PIN)Output current sunk by any FT_f pin20mA
I IO(PIN)Output current sourced by any I/O and control pin20mA
∑ I IO(PIN)Total output current sunk by sum of all I/Os and control pins (2)100mA
∑ I IO(PIN)Total output current sourced by sum of all I/Os and control pins (2)100mA
I INJ(PIN) (3)Injected current on FT_xxx, TT_xx, NRST pins-5/0 (4)mA
∑ |I INJ(PIN) |Total injected current (sum of all I/Os and control pins) (5)±25mA

Table 16. Thermal characteristics

SymbolRatingsValueUnit
T STGStorage temperature range-65 to +150°C
T JMaximum junction temperature150°C

200

STM32G474RBT6 Thermal Information

The maximum chip-junction temperature, T J max, in degrees Celsius, may be calculated using the following equation:

T J max = T A max + (P D max x Θ JA )

STM32G474RBT6 Package Information

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com . ECOPACK is an ST trademark.

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