N32G457MC/E

Part: N32G457xC/xE Type: 32-bit ARM Cortex-M4F MCU Description: 32-bit ARM Cortex-M4F MCU running up to 144 MHz with up to 512 KB Flash, 144 KB SRAM, 4x 12-bit 4.7 Msps ADCs, 2x 12-bit 1 Msps DACs, and integrated communication interfaces including U(S)ART, I2C, SPI, QSPI, USB, CAN, SDIO, Ethernet, and DVP, featuring a built-in cryptographic hardware acceleration engine.

Operating Conditions:

• Supply voltage: 1.8V–3.6V
• Operating temperature: -40 to +105 °C
• Max CPU frequency: 144 MHz
• Flash memory: Up to 512 KB
• SRAM: 144 KB

Key Specs:

• CPU Speed: Up to 144 MHz (180 DMIPS)
• Flash Memory: Up to 512 KB
• SRAM: 144 KB (including 16 KB Retention RAM)
• ADC: 4x 12-bit, 4.7 Msps (up to 8.9 Msps in 6-bit mode)
• DAC: 2x 12-bit, 1 Msps
• I2C Interfaces: 4x up to 1 MHz
• SPI Interfaces: 3x up to 36 MHz
• QSPI Interface: 1x up to 144 Mbps
• Ethernet: 1x 10M/100M MAC interface

Features:

• 32-bit ARM Cortex-M4 +FPU with DSP instructions and MPU support
• Built-in cryptographic algorithm hardware acceleration engine (AES, DES, SHA, SM1, SM3, SM4, SM7, MD5)
• Multi-user partition management (MMU) and data protection
• True Random Number Generator (TRNG)
• SWD/JTAG online debugging interface and UART, USB Bootloader support
• Up to 97 GPIOs, most supporting 5V tolerant

Package:

• LQFP64 (10mm x 10mm)
• LQFP80 (12mm x 12mm)
• LQFP100 (14mm x 14mm)
• LQFP128 (14mm x 14mm)

• -Built-in cryptographic algorithm hardware acceleration engine
• -AES, DES, SHA, SM1, SM3, SM4, SM7 and MD5 algorithms are supported.
• -Flash storage encryption
• -Multi-user partition management (MMU)
• -TRNG true random number generator
• -CRC16/32
• -Support write protection (WRP) and multiple read protection (RDP) levels (L0/L1/L2)
• -Support secure startup, encrypted download of programs, and secure update.
• -Support external clock failure detection, tamper detection.
• 96-bit UID and 128-bit UCID
• Working conditions

• -Voltage range: 1.8V~3.6V
• -Working temperature range: -40° C ~105° C
• -ESD: ± 4KV (HBM model), ± 1KV(CDM model)

The definitions and values of input and output AC characteristics are shown in Figure 4-9 and Table 4-28.

Unless otherwise specified, the parameters listed in Table 4-28 were measured using ambient temperature and supply voltage in accordance with Table 4-4.

Table 4-28 Output AC Characteristics (1)

Table 4-28 Output AC Characteristics (1)

DS_CFGy Configuration	PMODEy[1:0] Configuration	Symbol	Parameter	Condition	Min	Max	Unit
0	xx (2mA)	f max(IO)out	Maximum frequency (2)	C L =5pF,V DD =3.3V	-	75
0	xx (2mA)	f max(IO)out	Maximum frequency (2)	C L =5pF,V DD =2.5V	-	50	MHz
0	xx (2mA)	f max(IO)out	Maximum frequency (2)	C L =5pF,V DD =1.8V	-	30
0	xx (2mA)	t (IO)out		C L =5pF,V DD =3.3V	-	3.66	ns
0	xx (2mA)	t (IO)out		C L =5pF,V DD =2.5V	-	4.72	ns
0	xx (2mA)		Output delay	C L =5pF,V DD =1.8V	-	7.12	ns
0	xx (2mA)	t (IO)in	Input delay	C L =50fF,V DD =2.97V,V DDD =0.81V input characteristics at 1.8V and 2.5V are derated	-	2	ns
1	00/01 (4mA)		Maximum	C L = 10pF, V DD = 3.3V	-	90	MHz
1	00/01 (4mA)	f max(IO)out	frequency (2)	C L =10pF,V DD =2.5V	-	60	MHz
1	00/01 (4mA)		Maximum	C L =10pF,V DD =1.8V	-	40
1	00/01 (4mA)			C L = 10pF, V DD = 3.3V	-	3.5
1	00/01 (4mA)	t (IO)out	Output delay	C L =10pF,V DD =2.5V	-	4.5	ns
1	00/01 (4mA)			C L =10pF,V DD =1.8V	-	6.74	ns
1	00/01 (4mA)	t (IO)in	Input delay	C L =50fF,V DD =2.97V,V DDD =0.81V input characteristics at 1.8V and 2.5V are derated	-	2	ns
1	10 (8mA)		Maximum	C L = 20pF, V DD = 3.3V	-	100	MHz
1	10 (8mA)	f max(IO)out	(2)	C L =20pF,V DD =2.5V	-	75	MHz
1	10 (8mA)		frequency	C L =20pF,V DD =1.8V	-	50
1	10 (8mA)			C L = 20pF, V DD = 3.3V	-	3.42	ns
1	10 (8mA)	t (IO)out	Output delay	C L =20pF,V DD =2.5V	-	4.73	ns
1	10 (8mA)	t (IO)out	Output delay	C L =20pF,V DD =1.8V	-	6.53	ns
1	10 (8mA)	t (IO)in	Input delay	C L =50fF,V DD =2.97V,V DDD =0.81V input characteristics at 1.8V and 2.5V are derated	-	2	ns
1	11 (12mA)	f max(IO)out	Maximum frequency (2)	C L = 30pF, V DD = 3.3V	-	120	MHz
1	11 (12mA)	f max(IO)out	Maximum frequency (2)	C L =30pF,V DD =2.5V	-	90	MHz
1	11 (12mA)	f max(IO)out	Maximum frequency (2)	C L =30pF,V DD =1.8V	-	60	MHz
1	11 (12mA)	t (IO)out		C L = 30pF, V DD = 3.3V	-	3.34	ns
1	11 (12mA)	t (IO)out	Output delay	C L =3pF,V DD =2.5V	-	4.26	ns
1	11 (12mA)			C L =3pF,V DD =1.8V	-	6.34	ns
1	11 (12mA)	t (IO)in	Input delay	C L =50fF,V DD =2.97V,V DDD =0.81V input characteristics at 1.8V and 2.5V are derated	-	2	ns

1. The maximum frequency is Figure 4-9 Define.

Figure 4-9 Input output AC characteristic definition

Figure 4-10 Transmission delay

The load applied to the device may permanently damage the device if it exceeds the values given in the Absolute maximum rating list (Table 4-1 、 Table 4-2 、 Table 4-3). The maximum load that can be sustained is only given here, and it does not mean that the functional operation of the device under such conditions is correct. The reliability of the device will be affected when the device works for a long time under the maximum condition.

Table 4-1 Voltage characteristic

Symbol	Describe	Min	Max	Unit
V DD - V SS	Main power supply voltage (includingV DDA and V DD ) (1)	-0.3	4.0	V
V IN	Input voltage on 5V tolerant pin (3)	V SS -0.3	5.5	V
V IN	Input voltage on other pins (2)	V SS -0.3	V DD + 0.3	V
\	ΔV DDx \		Voltage difference between different supply pins	-
V SSx - V SS \		Voltage difference between different grounding pins	-	50
V ESD(HBM)	Electrostatic discharge voltage (Human body mode)	See paragraph 4.3.11 festival	See paragraph 4.3.11 festival

Table 4-2 Current characteristic

Symbol	Describe	Max (1)	Unit
I VDD	Total current (supply current) through V DD /V DDA power line (1)(4)	100	mA
I VSS	Total current (outflow current) through V SS ground wire	100	mA
I I	Output sink current on any I/O and control pins	12	mA
I I	Output current on any I/O and control pins	-12	mA
I INJ(PIN) (2)(3)	Injection current of NRST pin	-5/0	mA
I INJ(PIN) (2)(3)	Injection current of other pins (4)	+/-5	mA

Table 4-2 Current characteristic

1. When VIN>VDD, there is a forward injection current; when VIN<VSS, there is a reverse injection current. IINJ(PIN) should not exceed its maximum value. Voltage characteristics refer to Table 4-1.
2. Reverse injection current can interfere with the analog performance of the device. See section 4.3.23.
3. When the maximum current occurs, the maximum allowable voltage drop of VDD is 0.1VDD.

Table 4-3 Temperature characteristic

Symbol	Describe	Value	Unit
T STG	Storage temperature range	-40 ~ 125	° C
T J	Maximum junction temperature	125	° C