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LTC4359

Ideal Diode Controller

The LTC4359 is a ideal diode controller from Analog Devices. View the full LTC4359 datasheet below including key specifications, electrical characteristics, absolute maximum ratings.

LTC4359 shares its datasheet with LTC4359IMS8, whose page lists every part number it covers.

Official LTC4359 datasheet (PDF) — the source this page was extracted from.

LTC4359 Key Specifications

ParameterValue
ApplicationsRedundant Power Supplies, Telecom Infrastructure
Case/PackageMSOP
Current - Output (Max)220µA
Quiescent Current150 µA
Delay Time - OFF300 ns
Delay Time - ON200 µs
FET TypeN-Channel
Internal Switch(s)No
Lifecycle StatusProduction (Last Updated: 3 years ago)
Manufacturer Lifecycle StatusPRODUCTION (Last Updated: 3 years ago)
Max Operating Temperature85 °C
Max Output Current180 mA
Max Supply Voltage80 V
Min Operating Temperature-40 °C
Min Supply Voltage4 V
Mounting TypeSurface Mount
Number of Drivers1
Number of Pins8
Operating Supply Current150 µA
Operating Temperature-40°C ~ 85°C (TA)
Package / Case8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
PackagingMouseReel
PackagingTape and Reel
Ratio - Input:OutputN:1
RoHSCompliant
Schedule B8542310000, 8542390000, 8542390000|8542390000|8542390000|8542390000|8542390000
Standard Pack Qty2500
Supplier Device Package8-MSOP
Turn-Off Delay Time300 ns
Turn-On Delay Time200 µs
TypeN+1 ORing Controller
Supply Voltage4V ~ 80V

LTC4359 Overview

Part: LTC4359IMS8#TRPBF — Analog Devices (Linear Technology)

Type: Ideal Diode Controller (N-channel MOSFET driver with reverse input protection)

Description: 4–80 V positive high-voltage ideal diode controller that drives an external N-channel MOSFET, regulates a 30 mV forward drop, and withstands reverse inputs to -40 V, with 150 μA operating current and 9 μA shutdown current.

Operating Conditions:

  • Supply voltage: 4–80 V
  • Operating temperature (LTC4359I grade): -40 to 85 °C
  • Gate drive (GATE-SOURCE): 10–15 V for IN = 8 V to 80 V; 4.5–15 V at IN = 4 V

Absolute Maximum Ratings:

  • IN, SOURCE, SHDN: -40 V to 100 V
  • OUT: -2 V to 100 V
  • IN - OUT: -100 V to 100 V
  • IN - SOURCE: -1 V to 80 V
  • GATE - SOURCE: -0.3 V to +10 V
  • Storage temperature: -65 to 150 °C
  • Lead temperature (soldering, 10 sec): 300 °C

Key Specs:

  • IN current: 150 μA typ, 200 μA max (IN = 12 V, TA = 25 °C)
  • IN current in shutdown: 9 μA typ, 20 μA max (IN = OUT = 12 V, SHDN = 0 V)
  • Source-drain regulation voltage (ΔVSD): 20 / 30 / 45 mV min/typ/max
  • Gate pull-up current: -10 μA typ (-6 to -14 μA)
  • Gate pull-down current in fault: 130 mA typ (70 mA min, 180 mA max)
  • Gate turn-off delay: 0.3 μs typ, 0.5 μs max (ΔVSD = 0.1 V to -1 V, CGATE = 0 pF)
  • Gate turn-on delay: 200 μs typ (SHDN = 0 V to 2 V)
  • SHDN threshold: 0.6 / 1.2 / 2 V min/typ/max

Features:

  • Replaces a power Schottky diode to reduce power dissipation
  • Reverse input protection to -40 V
  • Smooth switchover without oscillation
  • Controls single or back-to-back N-channel MOSFETs
  • Shutdown mode with 9 μA supply current
  • Fast gate turn-off minimizes reverse current transients
  • AEC-Q100 qualified versions (#W ordering options)

Applications:

  • Automotive battery protection
  • Redundant power supplies
  • Supply holdup
  • Telecom infrastructure
  • Computer systems/servers
  • Solar systems

Package:

  • 8-Lead Plastic MSOP (LTC4359IMS8)

LTC4359 Applications

  • n Automotive Battery Protection
  • n Redundant Power Supplies
  • n Supply Holdup
  • n Telecom Infrastructure
  • n Computer Systems/Servers
  • n Solar Systems

LTC4359 Pin Configuration

LTC4359 Electrical Characteristics

The l denotes the specifications which apply over the full operating temperature range, otherwise specifications are at T A = 25°C, IN = 12V, SOURCE = IN, unless otherwise noted.

SYMBOLPARAMETERCONDITIONSMINTYPMAXUNITS
V INOperating Supply Rangel480V
I ININ CurrentIN = 12V IN = OUT = 12V, SHDN = 0V IN = OUT = 24V, SHDN = 0V IN = -40Vl l l l0150 9 15 -15200 20 30 -40μA μA μA μA
I OUTOUT CurrentIN = 12V, In Regulation IN = 12V, ∆V SD = -1V IN = OUT = 12V, SHDN = 0V IN = OUT = 24V, SHDN = 0V OUT = 12V, IN = SHDN = 0Vl l l l l35 120 0.8 0.8 67.5 220 3 3 12μA μA μA μA μA
I SOURCESOURCE CurrentIN = 12V, ∆V SD = -1V IN = SOURCE = 12V, SHDN = 0V SOURCE = -40Vl l l1 -0.4150 4 -0.8200 15 -1.5μA μA mA
∆V GATEGate Drive (GATE-SOURCE)IN = 4V, I GATE = 0, -1μA IN = 8V to 80V; I GATE = 0, -1μAl l4.5 105.5 1215 15V V
∆V SDSource-Drain Regulation Voltage (IN -OUT)∆V GATE = 2.5Vl203045mV
I GATE(UP)Gate Pull-Up CurrentGATE = IN, ∆V SD = 0.1Vl-6-10-14μA
I GATE(DOWN)Gate Pull-Down CurrentFault Condition, ∆V GATE = 5V, ∆V SD = -1V Shutdown Mode, ∆V GATE = 5V, ∆V SD = 0.7Vl l70 0.6130180mA mA
t OFFGate Turn-Off Delay Time∆V SD = 0.1V to -1V, ∆V GATE < 2V, C GATE = 0pFl0.30.5μs
t ONGate Turn-On Delay TimeIN = 12V, SOURCE = OUT = 0V, SHDN = 0V to 2V ∆V GATE > 4.5V, C GATE = 0pF200μs
V SHDN (TH)SHDN Pin Input ThresholdIN = 4V to 80Vl0.61.22V
V SHDN (FLT)SHDN Pin Float VoltageIN = 4V to 80Vl0.61.752.5V
I SHDNSHDN Pin CurrentSHDN = 0.5V, LTC4359I, LTC4359C SHDN = 0.5V, LTC4359H SHDN = -40V Maximum Allowable Leakage, V IN = 4Vl l l-1 -0.5 -0.4-3 -3 -0.8 100-5 -5 -1.5μA μA mA nA
V SOURCE(TH)Reverse SOURCE Threshold for GATE OffGATE = 0V, I GATE(DOWN) = 1mAl-0.9-1.8-2.7V

Note 1: Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. Exposure to any Absolute Maximum Rating condition for extended periods may affect device reliability and lifetime.

Note 2. All currents into pins are positive; all voltages are referenced to VSS unless otherwise specified.

Note 3. An internal clamp limits the OUT pin to a minimum of 100V above VSS . Driving this pin with more current than 1mA may damage the device.

Note 4. An internal clamp limits the GATE pin to a minimum of 10V above IN or 100V above V SS . Driving this pin to voltages beyond the clamp may damage the device.

LTC4359 Absolute Maximum Ratings

(Notes 1, 2)

IN, SOURCE, SHDN

................................... -40V to 100V

OUT (Note 3) ................................................-2V to 100V

IN - OUT ..................................................-100V to 100V

IN - SOURCE .................................................-1V to 80V

GATE - SOURCE (Note 4) .........................-0.3V to +10V

LTC4359 Typical Application

12V, 20A Automotive Reverse-Battery Protection

The LTC ® 4359 is a positive high voltage ideal diode controller that drives an external N-channel MOSFET to replace a Schottky diode. It controls the forward-voltage drop across the MOSFET to ensure smooth current delivery without oscillation even at light loads. If a power source fails or is shorted, a fast turn-off minimizes reverse current transients. A shutdown mode is available to reduce the quiescent current to 9μA for load switch and 14μA for ideal diode applications.

When used in high current diode applications, the LTC4359 reduces power consumption, heat dissipation, voltage loss and PC board area. With its wide operating voltage range, the ability to withstand reverse input voltage, and high temperature rating, the LTC4359 satisfies the demanding requirements of both automotive and telecom applications. The LTC4359 also easily ORs power sources in systems with redundant supplies.

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Variants on the same datasheet

These parts have exact links to the same datasheet. They are candidates to compare, not verified drop-in replacements; check package, pinout and electrical limits.

Part NumberManufacturerPackage
LTC4359CAnalog Devices—
LTC4359CDCBAnalog DevicesDFN-6 2x3mm
LTC4359CMS8Analog DevicesMSOP-8
LTC4359CS8Analog DevicesSO-8
LTC4359HAnalog Devices—
LTC4359HDCBAnalog DevicesDFN-6 2x3mm
LTC4359HMS8Analog DevicesMSOP-8
LTC4359HS8Analog DevicesSO-8
LTC4359IAnalog Devices—
LTC4359IDCBAnalog DevicesDFN-6 2x3mm
LTC4359IMS8Analog DevicesMSOP-8
LTC4359IMS8#TRPBFAnalog Devices8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
LTC4359IS8Analog DevicesSOIC-8
LTC4359SAnalog Devices—

Other Integrated Circuits

All Integrated Circuits datasheetsAll Analog Devices datasheets (713)

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