LTC4359
Ideal Diode ControllerThe LTC4359 is a ideal diode controller from Analog Devices. View the full LTC4359 datasheet below including key specifications, electrical characteristics, absolute maximum ratings.
LTC4359 shares its datasheet with LTC4359IMS8, whose page lists every part number it covers.
Official LTC4359 datasheet (PDF) — the source this page was extracted from.
Manufacturer
Analog DevicesCategory
Integrated CircuitsLTC4359 Key Specifications
| Parameter | Value |
|---|---|
| Applications | Redundant Power Supplies, Telecom Infrastructure |
| Case/Package | MSOP |
| Current - Output (Max) | 220µA |
| Quiescent Current | 150 µA |
| Delay Time - OFF | 300 ns |
| Delay Time - ON | 200 µs |
| FET Type | N-Channel |
| Internal Switch(s) | No |
| Lifecycle Status | Production (Last Updated: 3 years ago) |
| Manufacturer Lifecycle Status | PRODUCTION (Last Updated: 3 years ago) |
| Max Operating Temperature | 85 °C |
| Max Output Current | 180 mA |
| Max Supply Voltage | 80 V |
| Min Operating Temperature | -40 °C |
| Min Supply Voltage | 4 V |
| Mounting Type | Surface Mount |
| Number of Drivers | 1 |
| Number of Pins | 8 |
| Operating Supply Current | 150 µA |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Package / Case | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) |
| Packaging | MouseReel |
| Packaging | Tape and Reel |
| Ratio - Input:Output | N:1 |
| RoHS | Compliant |
| Schedule B | 8542310000, 8542390000, 8542390000|8542390000|8542390000|8542390000|8542390000 |
| Standard Pack Qty | 2500 |
| Supplier Device Package | 8-MSOP |
| Turn-Off Delay Time | 300 ns |
| Turn-On Delay Time | 200 µs |
| Type | N+1 ORing Controller |
| Supply Voltage | 4V ~ 80V |
LTC4359 Overview
Part: LTC4359IMS8#TRPBF — Analog Devices (Linear Technology)
Type: Ideal Diode Controller (N-channel MOSFET driver with reverse input protection)
Description: 4–80 V positive high-voltage ideal diode controller that drives an external N-channel MOSFET, regulates a 30 mV forward drop, and withstands reverse inputs to -40 V, with 150 μA operating current and 9 μA shutdown current.
Operating Conditions:
- Supply voltage: 4–80 V
- Operating temperature (LTC4359I grade): -40 to 85 °C
- Gate drive (GATE-SOURCE): 10–15 V for IN = 8 V to 80 V; 4.5–15 V at IN = 4 V
Absolute Maximum Ratings:
- IN, SOURCE, SHDN: -40 V to 100 V
- OUT: -2 V to 100 V
- IN - OUT: -100 V to 100 V
- IN - SOURCE: -1 V to 80 V
- GATE - SOURCE: -0.3 V to +10 V
- Storage temperature: -65 to 150 °C
- Lead temperature (soldering, 10 sec): 300 °C
Key Specs:
- IN current: 150 μA typ, 200 μA max (IN = 12 V, TA = 25 °C)
- IN current in shutdown: 9 μA typ, 20 μA max (IN = OUT = 12 V, SHDN = 0 V)
- Source-drain regulation voltage (ΔVSD): 20 / 30 / 45 mV min/typ/max
- Gate pull-up current: -10 μA typ (-6 to -14 μA)
- Gate pull-down current in fault: 130 mA typ (70 mA min, 180 mA max)
- Gate turn-off delay: 0.3 μs typ, 0.5 μs max (ΔVSD = 0.1 V to -1 V, CGATE = 0 pF)
- Gate turn-on delay: 200 μs typ (SHDN = 0 V to 2 V)
- SHDN threshold: 0.6 / 1.2 / 2 V min/typ/max
Features:
- Replaces a power Schottky diode to reduce power dissipation
- Reverse input protection to -40 V
- Smooth switchover without oscillation
- Controls single or back-to-back N-channel MOSFETs
- Shutdown mode with 9 μA supply current
- Fast gate turn-off minimizes reverse current transients
- AEC-Q100 qualified versions (#W ordering options)
Applications:
- Automotive battery protection
- Redundant power supplies
- Supply holdup
- Telecom infrastructure
- Computer systems/servers
- Solar systems
Package:
- 8-Lead Plastic MSOP (LTC4359IMS8)
LTC4359 Applications
- n Automotive Battery Protection
- n Redundant Power Supplies
- n Supply Holdup
- n Telecom Infrastructure
- n Computer Systems/Servers
- n Solar Systems
LTC4359 Pin Configuration
LTC4359 Electrical Characteristics
The l denotes the specifications which apply over the full operating temperature range, otherwise specifications are at T A = 25°C, IN = 12V, SOURCE = IN, unless otherwise noted.
| SYMBOL | PARAMETER | CONDITIONS | MIN | TYP | MAX | UNITS | |
|---|---|---|---|---|---|---|---|
| V IN | Operating Supply Range | l | 4 | 80 | V | ||
| I IN | IN Current | IN = 12V IN = OUT = 12V, SHDN = 0V IN = OUT = 24V, SHDN = 0V IN = -40V | l l l l | 0 | 150 9 15 -15 | 200 20 30 -40 | μA μA μA μA |
| I OUT | OUT Current | IN = 12V, In Regulation IN = 12V, ∆V SD = -1V IN = OUT = 12V, SHDN = 0V IN = OUT = 24V, SHDN = 0V OUT = 12V, IN = SHDN = 0V | l l l l l | 3 | 5 120 0.8 0.8 6 | 7.5 220 3 3 12 | μA μA μA μA μA |
| I SOURCE | SOURCE Current | IN = 12V, ∆V SD = -1V IN = SOURCE = 12V, SHDN = 0V SOURCE = -40V | l l l | 1 -0.4 | 150 4 -0.8 | 200 15 -1.5 | μA μA mA |
| ∆V GATE | Gate Drive (GATE-SOURCE) | IN = 4V, I GATE = 0, -1μA IN = 8V to 80V; I GATE = 0, -1μA | l l | 4.5 10 | 5.5 12 | 15 15 | V V |
| ∆V SD | Source-Drain Regulation Voltage (IN -OUT) | ∆V GATE = 2.5V | l | 20 | 30 | 45 | mV |
| I GATE(UP) | Gate Pull-Up Current | GATE = IN, ∆V SD = 0.1V | l | -6 | -10 | -14 | μA |
| I GATE(DOWN) | Gate Pull-Down Current | Fault Condition, ∆V GATE = 5V, ∆V SD = -1V Shutdown Mode, ∆V GATE = 5V, ∆V SD = 0.7V | l l | 70 0.6 | 130 | 180 | mA mA |
| t OFF | Gate Turn-Off Delay Time | ∆V SD = 0.1V to -1V, ∆V GATE < 2V, C GATE = 0pF | l | 0.3 | 0.5 | μs | |
| t ON | Gate Turn-On Delay Time | IN = 12V, SOURCE = OUT = 0V, SHDN = 0V to 2V ∆V GATE > 4.5V, C GATE = 0pF | 200 | μs | |||
| V SHDN (TH) | SHDN Pin Input Threshold | IN = 4V to 80V | l | 0.6 | 1.2 | 2 | V |
| V SHDN (FLT) | SHDN Pin Float Voltage | IN = 4V to 80V | l | 0.6 | 1.75 | 2.5 | V |
| I SHDN | SHDN Pin Current | SHDN = 0.5V, LTC4359I, LTC4359C SHDN = 0.5V, LTC4359H SHDN = -40V Maximum Allowable Leakage, V IN = 4V | l l l | -1 -0.5 -0.4 | -3 -3 -0.8 100 | -5 -5 -1.5 | μA μA mA nA |
| V SOURCE(TH) | Reverse SOURCE Threshold for GATE Off | GATE = 0V, I GATE(DOWN) = 1mA | l | -0.9 | -1.8 | -2.7 | V |
Note 1: Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. Exposure to any Absolute Maximum Rating condition for extended periods may affect device reliability and lifetime.
Note 2. All currents into pins are positive; all voltages are referenced to VSS unless otherwise specified.
Note 3. An internal clamp limits the OUT pin to a minimum of 100V above VSS . Driving this pin with more current than 1mA may damage the device.
Note 4. An internal clamp limits the GATE pin to a minimum of 10V above IN or 100V above V SS . Driving this pin to voltages beyond the clamp may damage the device.
LTC4359 Absolute Maximum Ratings
(Notes 1, 2)
IN, SOURCE, SHDN
................................... -40V to 100V
OUT (Note 3) ................................................-2V to 100V
IN - OUT ..................................................-100V to 100V
IN - SOURCE .................................................-1V to 80V
GATE - SOURCE (Note 4) .........................-0.3V to +10V
LTC4359 Typical Application
12V, 20A Automotive Reverse-Battery Protection
The LTC ® 4359 is a positive high voltage ideal diode controller that drives an external N-channel MOSFET to replace a Schottky diode. It controls the forward-voltage drop across the MOSFET to ensure smooth current delivery without oscillation even at light loads. If a power source fails or is shorted, a fast turn-off minimizes reverse current transients. A shutdown mode is available to reduce the quiescent current to 9μA for load switch and 14μA for ideal diode applications.
When used in high current diode applications, the LTC4359 reduces power consumption, heat dissipation, voltage loss and PC board area. With its wide operating voltage range, the ability to withstand reverse input voltage, and high temperature rating, the LTC4359 satisfies the demanding requirements of both automotive and telecom applications. The LTC4359 also easily ORs power sources in systems with redundant supplies.
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Variants on the same datasheet
These parts have exact links to the same datasheet. They are candidates to compare, not verified drop-in replacements; check package, pinout and electrical limits.
| Part Number | Manufacturer | Package |
|---|---|---|
| LTC4359C | Analog Devices | — |
| LTC4359CDCB | Analog Devices | DFN-6 2x3mm |
| LTC4359CMS8 | Analog Devices | MSOP-8 |
| LTC4359CS8 | Analog Devices | SO-8 |
| LTC4359H | Analog Devices | — |
| LTC4359HDCB | Analog Devices | DFN-6 2x3mm |
| LTC4359HMS8 | Analog Devices | MSOP-8 |
| LTC4359HS8 | Analog Devices | SO-8 |
| LTC4359I | Analog Devices | — |
| LTC4359IDCB | Analog Devices | DFN-6 2x3mm |
| LTC4359IMS8 | Analog Devices | MSOP-8 |
| LTC4359IMS8#TRPBF | Analog Devices | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) |
| LTC4359IS8 | Analog Devices | SOIC-8 |
| LTC4359S | Analog Devices | — |
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All Integrated Circuits datasheetsAll Analog Devices datasheets (713)
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