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L9856

High-Voltage High-Side Gate Driver

The L9856 is a high-voltage high-side gate driver from STMicroelectronics. View the full L9856 datasheet below including key specifications, electrical characteristics, absolute maximum ratings.

Official L9856 datasheet (PDF) — the source this page was extracted from.

Manufacturer

STMicroelectronics

Package

SO-8

L9856 Key Specifications

ParameterValue
ESD (HBM)2 kV
Rise/Fall Time100 ns (typ, VBS=16V, 2.5 nF load)
DV/Dt Immunity±50 V/ns
Peak Sink Current500 mA
VS Offset Voltage-3.2V to 150V
Peak Source Current500 mA
VBS Quiescent Current100 µA max
VCC Quiescent Current400 µA max
Input Logic ThresholdsVIH 0.6xVCC min, VIL 0.28xVCC max
Max Switching Frequency200 kHz
Junction Temperature Range-55°C to 150°C
Max High-Side Rail Voltage160 V
Operating Temperature Range-40°C to +125°C
VB Driver Output Stage VoltageVS+4.4V to VS+18V
VCC Supply Voltage (Recommended)4.4V to 6.5V
Thermal Resistance Junction-Ambient150 °C/W

L9856 Overview

Part: L9856 — STMicroelectronics

Type: High-Side Driver

Description: The L9856 is a high voltage high-side driver manufactured with BCD "OFF-LINE" technology, capable of driving N-Channel Power MOS transistors with a high-side floating supply up to 160 V and 500 mA source/sink current capability.

Operating Conditions:

  • Supply voltage (VCC): 4.4–6.5 V
  • Operating temperature: -40 to +125 °C
  • High side floating supply offset voltage (VS): -3.2 to 150 V
  • Switching frequency: up to 200 kHz

Absolute Maximum Ratings:

  • Max supply voltage (VCC): 20 V
  • Max high side floating supply voltage (VBS): 20 V
  • Max high side driver output stage voltage (VB): 166 V
  • Max junction/storage temperature: 150 °C

Key Specs:

  • Peak output source current (IPKSo3): 500 mA (Typ. at VBS = 16V, Tj = 25 °C)
  • Peak output sink current (IPKSi3): 500 mA (Typ. at IN = 5 V, VBS = 16 V, Tj = 25 °C)
  • Output rise time (tr3): 0.1 μs (Typ. at VBS = 16 V, Tj = 25 °C)
  • Output fall time (tf3): 0.1 μs (Typ. at VBS = 16 V, IN = 5 V, Tj = 25 °C)
  • Input-to-output turn-on propagation delay (t plhi): 0.1 μs (Typ.)
  • Input-to-output turn-off propagation delay (t phli): 0.1 μs (Typ.)
  • VCC supply undervoltage positive going threshold (VCCUV+): 4.3 V (Max.)
  • Allowable offset voltage slew rate (dV/dt): ±50 V/nsec

Features:

  • High voltage rail up to 160 V
  • dV/dt immunity ±50 V/nsec in full temperature range
  • Driver current capability: 500 mA source, 500 mA sink
  • Switching times 100 ns rise/fall with 2.5 nF load
  • CMOS/TTL Schmitt trigger inputs with hysteresis
  • Under voltage lock out
  • Clamping on VCC
  • Loading circuit for external Bootstrap capacitor
  • Inverting input
  • Reset circuitry

Applications:

  • Driving N-Channel Power MOS transistors

Package:

  • SO-8

L9856 Features

  • ■ High voltage rail up to 160 V
  • ■ dV/dt immunity ±50 V/nsec in full temperature range
  • ■ Driver current capability: 500 mA source, 500 mA sink
  • ■ Switching times 100 ns rise/fall with 2.5 nF load
  • ■ CMOS/TTL Schmitt trigger inputs with hysteresis
  • ■ Under voltage lock out
  • ■ Clamping on V CC
  • ■ Loading circuit for external Bootstrap capacitor
  • ■ Inverting input
  • ■ Reset circuitry
  • ■ SO-8 package

Table 1. Device summary

Order codeOperating temp range, CPackagePacking
L9856-40 to +125SO-8Tube
L9856TR-40 to +125SO-8Tape and Reel

L9856 Pin Configuration

Figure 2. Pin connection (top view)

Table 2. Pin function

Pin #Pin nameDescription
1V CCDriver supply, typical 5V
2IN-Driver control signal input (negative logic)
3GNDGround
4RESET-Driver enable signal input (negative logic)
5V SMOSFET source connection
6NCNo connection (no bondwire)
7H OMOSFET gate connection
8V BDriver output stage supply

Table 2. Pin function

L9856 Electrical Characteristics

Unless otherwise specified, V CC = 5 V, V BS = 7 V, V S = 0 V, IN = 0 V, RES = 5 V, load R = 50 , C = 2.5 nF . Unless otherwise noted, these specifications apply for an operating ambient temperature range of -40 °C < T amb < 125 °C.

SymbolParameterTest conditionMin.Typ.Max.Unit
V CC supplyV CC supplyV CC supplyV CC supplyV CC supplyV CC supplyV CC supply
V CCUV+V CC supply undervoltage positive going thresholdV CC rising from 0 V4.3V
V CCUV-V CC supply undervoltage negative going thresholdV CC dropping from 5 V2.8
V CCUVHYSV CC supply undervoltage lockout hysteresis0.020.30.6
td UVCCUndervoltage lockout response timeV CC steps either from 6.5 V to 2.7 V or from 2.7 V to 6.5 V0.520s
I QCCV CC supply current400μA

L9856 Absolute Maximum Ratings

Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are absolute voltages referenced to GND, all currents are defined positive into any lead. An operation above the absolute maximum limit is not implied and can damage the part.

Table 4. Absolute maximum ratings

SymbolParameterValueValueUnits
SymbolParameterMin.Max.Units
V BSHigh side floating supply voltage.-0.320V
V BHigh side driver output stage voltage neg. transient: 0.5 ms, external MOSFET off.-5166V
V SHigh side floating supply offset voltage neg. transient 0.1 μs, repetitive pulse over lifetime at every switching event.-8150V
V HOOutput voltage gate connection.V S - 0.3V B + 0.3V
V CCSupply voltage.-0.320V
V INInput voltage.-0.3V CC + 0.3V
I INInput injection current. Full function, no latch- up; (guaranteed by design). Test at 5 V and 7 V on Eng. Samples.---+1mA
V RESReset input voltage.-0.3V CC + 0.3V
V esdElectrostatic discharge voltage (human body model).2kV
V CDMCharge device model CDM, EOS/ESD Ass. Std 5.3. Number of discharges per pin: 6.500V
dV/dtAllowable offset voltage slew rate.-5050V/nsec
T JJunction temperature.-55150°C
T stgStorage temperature.-55150°C
T LLead temperature (Soldering, 10 seconds) 3 times Bosch soldering profile acc. to Bosch soldering conditions, Gen. Spec.-300°C

Table 4. Absolute maximum ratings

For proper operations the device should be used within the recommended conditions.

Table 5. Recommended operating conditions

SymbolParameterValueValueUnits
SymbolMin.Max.Units
V B (1)High side driver output stage voltageVS+4.4VS+18V
V SHigh side floating supply offset voltage-3.2 -2.9150 150V
V HOOutput voltage gate connectionV SV BV
V CCSupply voltage4.46.5V
V INInput voltage0V CCV
V RESReset input voltage0V CCV
dV/dt (2)Allowable offset voltage slew rate-5050V/nsec
F SSwitching frequency200kHz

L9856 Thermal Information

Table 3. Thermal data

SymbolParameterValueUnit
R th(j-amb)Thermal resistance junction to ambient150°C/W

L9856 Package Information

In order to meet environmental requirements, ST (also) offers these devices in ECOPACK ® packages. ECOPACK ® packages are lead-free. The category of second Level Interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label.

ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com.

Figure 5. SO-8 mechanical data and package dimensions

Variants on the same datasheet

These parts have exact links to the same datasheet. They are candidates to compare, not verified drop-in replacements; check package, pinout and electrical limits.

Part NumberManufacturerPackage
L9856TRSTMicroelectronicsSO-8

Other Integrated Circuits

All Integrated Circuits datasheetsAll STMicroelectronics datasheets (808)

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