L9856
High-Voltage High-Side Gate DriverThe L9856 is a high-voltage high-side gate driver from STMicroelectronics. View the full L9856 datasheet below including key specifications, electrical characteristics, absolute maximum ratings.
Official L9856 datasheet (PDF) — the source this page was extracted from.
L9856 Key Specifications
| Parameter | Value |
|---|---|
| ESD (HBM) | 2 kV |
| Rise/Fall Time | 100 ns (typ, VBS=16V, 2.5 nF load) |
| DV/Dt Immunity | ±50 V/ns |
| Peak Sink Current | 500 mA |
| VS Offset Voltage | -3.2V to 150V |
| Peak Source Current | 500 mA |
| VBS Quiescent Current | 100 µA max |
| VCC Quiescent Current | 400 µA max |
| Input Logic Thresholds | VIH 0.6xVCC min, VIL 0.28xVCC max |
| Max Switching Frequency | 200 kHz |
| Junction Temperature Range | -55°C to 150°C |
| Max High-Side Rail Voltage | 160 V |
| Operating Temperature Range | -40°C to +125°C |
| VB Driver Output Stage Voltage | VS+4.4V to VS+18V |
| VCC Supply Voltage (Recommended) | 4.4V to 6.5V |
| Thermal Resistance Junction-Ambient | 150 °C/W |
L9856 Overview
Part: L9856 — STMicroelectronics
Type: High-Side Driver
Description: The L9856 is a high voltage high-side driver manufactured with BCD "OFF-LINE" technology, capable of driving N-Channel Power MOS transistors with a high-side floating supply up to 160 V and 500 mA source/sink current capability.
Operating Conditions:
- Supply voltage (VCC): 4.4–6.5 V
- Operating temperature: -40 to +125 °C
- High side floating supply offset voltage (VS): -3.2 to 150 V
- Switching frequency: up to 200 kHz
Absolute Maximum Ratings:
- Max supply voltage (VCC): 20 V
- Max high side floating supply voltage (VBS): 20 V
- Max high side driver output stage voltage (VB): 166 V
- Max junction/storage temperature: 150 °C
Key Specs:
- Peak output source current (IPKSo3): 500 mA (Typ. at VBS = 16V, Tj = 25 °C)
- Peak output sink current (IPKSi3): 500 mA (Typ. at IN = 5 V, VBS = 16 V, Tj = 25 °C)
- Output rise time (tr3): 0.1 μs (Typ. at VBS = 16 V, Tj = 25 °C)
- Output fall time (tf3): 0.1 μs (Typ. at VBS = 16 V, IN = 5 V, Tj = 25 °C)
- Input-to-output turn-on propagation delay (t plhi): 0.1 μs (Typ.)
- Input-to-output turn-off propagation delay (t phli): 0.1 μs (Typ.)
- VCC supply undervoltage positive going threshold (VCCUV+): 4.3 V (Max.)
- Allowable offset voltage slew rate (dV/dt): ±50 V/nsec
Features:
- High voltage rail up to 160 V
- dV/dt immunity ±50 V/nsec in full temperature range
- Driver current capability: 500 mA source, 500 mA sink
- Switching times 100 ns rise/fall with 2.5 nF load
- CMOS/TTL Schmitt trigger inputs with hysteresis
- Under voltage lock out
- Clamping on VCC
- Loading circuit for external Bootstrap capacitor
- Inverting input
- Reset circuitry
Applications:
- Driving N-Channel Power MOS transistors
Package:
- SO-8
L9856 Features
- ■ High voltage rail up to 160 V
- ■ dV/dt immunity ±50 V/nsec in full temperature range
- ■ Driver current capability: 500 mA source, 500 mA sink
- ■ Switching times 100 ns rise/fall with 2.5 nF load
- ■ CMOS/TTL Schmitt trigger inputs with hysteresis
- ■ Under voltage lock out
- ■ Clamping on V CC
- ■ Loading circuit for external Bootstrap capacitor
- ■ Inverting input
- ■ Reset circuitry
- ■ SO-8 package
Table 1. Device summary
| Order code | Operating temp range, C | Package | Packing |
|---|---|---|---|
| L9856 | -40 to +125 | SO-8 | Tube |
| L9856TR | -40 to +125 | SO-8 | Tape and Reel |
L9856 Pin Configuration
Figure 2. Pin connection (top view)
Table 2. Pin function
| Pin # | Pin name | Description |
|---|---|---|
| 1 | V CC | Driver supply, typical 5V |
| 2 | IN- | Driver control signal input (negative logic) |
| 3 | GND | Ground |
| 4 | RESET- | Driver enable signal input (negative logic) |
| 5 | V S | MOSFET source connection |
| 6 | NC | No connection (no bondwire) |
| 7 | H O | MOSFET gate connection |
| 8 | V B | Driver output stage supply |
Table 2. Pin function
L9856 Electrical Characteristics
Unless otherwise specified, V CC = 5 V, V BS = 7 V, V S = 0 V, IN = 0 V, RES = 5 V, load R = 50 , C = 2.5 nF . Unless otherwise noted, these specifications apply for an operating ambient temperature range of -40 °C < T amb < 125 °C.
| Symbol | Parameter | Test condition | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| V CC supply | V CC supply | V CC supply | V CC supply | V CC supply | V CC supply | V CC supply |
| V CCUV+ | V CC supply undervoltage positive going threshold | V CC rising from 0 V | 4.3 | V | ||
| V CCUV- | V CC supply undervoltage negative going threshold | V CC dropping from 5 V | 2.8 | |||
| V CCUVHYS | V CC supply undervoltage lockout hysteresis | 0.02 | 0.3 | 0.6 | ||
| td UVCC | Undervoltage lockout response time | V CC steps either from 6.5 V to 2.7 V or from 2.7 V to 6.5 V | 0.5 | 20 | s | |
| I QCC | V CC supply current | 400 | μA |
L9856 Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are absolute voltages referenced to GND, all currents are defined positive into any lead. An operation above the absolute maximum limit is not implied and can damage the part.
Table 4. Absolute maximum ratings
| Symbol | Parameter | Value | Value | Units |
|---|---|---|---|---|
| Symbol | Parameter | Min. | Max. | Units |
| V BS | High side floating supply voltage. | -0.3 | 20 | V |
| V B | High side driver output stage voltage neg. transient: 0.5 ms, external MOSFET off. | -5 | 166 | V |
| V S | High side floating supply offset voltage neg. transient 0.1 μs, repetitive pulse over lifetime at every switching event. | -8 | 150 | V |
| V HO | Output voltage gate connection. | V S - 0.3 | V B + 0.3 | V |
| V CC | Supply voltage. | -0.3 | 20 | V |
| V IN | Input voltage. | -0.3 | V CC + 0.3 | V |
| I IN | Input injection current. Full function, no latch- up; (guaranteed by design). Test at 5 V and 7 V on Eng. Samples. | --- | +1 | mA |
| V RES | Reset input voltage. | -0.3 | V CC + 0.3 | V |
| V esd | Electrostatic discharge voltage (human body model). | 2k | V | |
| V CDM | Charge device model CDM, EOS/ESD Ass. Std 5.3. Number of discharges per pin: 6. | 500 | V | |
| dV/dt | Allowable offset voltage slew rate. | -50 | 50 | V/nsec |
| T J | Junction temperature. | -55 | 150 | °C |
| T stg | Storage temperature. | -55 | 150 | °C |
| T L | Lead temperature (Soldering, 10 seconds) 3 times Bosch soldering profile acc. to Bosch soldering conditions, Gen. Spec. | - | 300 | °C |
Table 4. Absolute maximum ratings
L9856 Recommended Operating Conditions
For proper operations the device should be used within the recommended conditions.
Table 5. Recommended operating conditions
| Symbol | Parameter | Value | Value | Units |
|---|---|---|---|---|
| Symbol | Min. | Max. | Units | |
| V B (1) | High side driver output stage voltage | VS+4.4 | VS+18 | V |
| V S | High side floating supply offset voltage | -3.2 -2.9 | 150 150 | V |
| V HO | Output voltage gate connection | V S | V B | V |
| V CC | Supply voltage | 4.4 | 6.5 | V |
| V IN | Input voltage | 0 | V CC | V |
| V RES | Reset input voltage | 0 | V CC | V |
| dV/dt (2) | Allowable offset voltage slew rate | -50 | 50 | V/nsec |
| F S | Switching frequency | 200 | kHz |
L9856 Thermal Information
Table 3. Thermal data
| Symbol | Parameter | Value | Unit |
|---|---|---|---|
| R th(j-amb) | Thermal resistance junction to ambient | 150 | °C/W |
L9856 Package Information
In order to meet environmental requirements, ST (also) offers these devices in ECOPACK ® packages. ECOPACK ® packages are lead-free. The category of second Level Interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label.
ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com.
Figure 5. SO-8 mechanical data and package dimensions
Variants on the same datasheet
These parts have exact links to the same datasheet. They are candidates to compare, not verified drop-in replacements; check package, pinout and electrical limits.
| Part Number | Manufacturer | Package |
|---|---|---|
| L9856TR | STMicroelectronics | SO-8 |
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