Everspin Technologies Datasheets
11 Everspin Technologies datasheets read into specs, pinouts and ratings, including Memory ICs.
Everspin Technologies parts by category
- Memory ICs (10)
Everspin Technologies datasheets
11 parts · page 1 of 1. Most used first, then by part number.
MR4A16B
Everspin Technologies
16,777,216-bit (1M x 16) magnetoresistive RAM with SRAM-compatible 35 ns read/write timing, unlimited endurance, >20-year non-volatile data retention and on-chip single-bit ECC
MR4A16BCMA35
Everspin Technologies
16Mbit (1M x 16) 3.3V magnetoresistive RAM with SRAM-compatible 35 ns read/write timing, unlimited endurance and >20-year non-volatile data retention, industrial temperature range
MR4A16BCMA35R
Everspin Technologies
3.3V 16,777,216-bit (1M x 16) magnetoresistive RAM with SRAM-compatible 35 ns read/write timing, unlimited endurance, >20-year non-volatile data retention and on-chip ECC; industrial temperature, tape & reel BGA version.
MR4A16BCYS35
Everspin Technologies
16Mbit (1M x 16) 3.3V magnetoresistive RAM with SRAM-compatible 35 ns read/write timing, unlimited endurance and >20-year non-volatile data retention, with internal ECC
MR4A16BCYS35R
Everspin Technologies
3.3V 1M x 16 (16,777,216-bit) magnetoresistive RAM with SRAM-compatible 35 ns read/write timing, unlimited endurance, and >20-year non-volatile data retention with on-chip single-bit ECC.
MR4A16BMA35
Everspin Technologies
16Mb (1M x 16) 3.3V magnetoresistive RAM with SRAM-compatible 35 ns read/write timing, unlimited endurance and >20-year non-volatile data retention
MR4A16BMA35R
Everspin Technologies
16Mbit (1M x 16) non-volatile Magnetoresistive Random Access Memory (MRAM) with SRAM compatible 35ns read/write timing and unlimited endurance.
MR4A16BMYS35
Everspin Technologies
16-Mbit (1M x 16) 3.3V magnetoresistive RAM with SRAM-compatible 35 ns read/write timing, unlimited endurance, non-volatile storage and on-chip ECC; AEC-Q100 Grade 1 variant in 54-TSOP2.
MR4A16BMYS35R
Everspin Technologies
3.3V 16,777,216-bit (1M x 16) magnetoresistive RAM with SRAM-compatible 35 ns read/write timing, unlimited endurance, >20-year non-volatile data retention, and AEC-Q100 Grade 1 qualification in this variant
MR4A16BYS35
Everspin Technologies
16Mbit (1M x 16) 3.3V magnetoresistive RAM with SRAM-compatible 35 ns read/write timing, unlimited endurance and >20-year non-volatile data retention
MR4A16BYS35R
Everspin Technologies
3.3V 1M x 16 (16,777,216-bit) magnetoresistive RAM with SRAM-compatible 35 ns read/write timing, unlimited endurance and >20-year non-volatile data retention