ZD25WD20C
Serial Multi I/O Flash MemoryThe ZD25WD20C is a serial multi i/o flash memory from Zetta. View the full ZD25WD20C datasheet below including key specifications, electrical characteristics, absolute maximum ratings.
Official ZD25WD20C datasheet (PDF) — the source this page was extracted from.
Manufacturer
ZettaCategory
Memory ICsZD25WD20C Key Specifications
| Parameter | Value |
|---|---|
| Endurance | 100,000 program/erase cycles |
| Interface | SPI (Standard, Dual I/O) |
| Page Size | 256 bytes |
| Unique ID | 128-bit |
| Block Size | 32/64 KB |
| Sector Size | 4 KB |
| Data Retention | 20 years |
| Memory Density | 2 Mbit (256 KB) |
| Supply Voltage | 1.65V to 3.6V |
| Standby Current | 0.5μA |
| Page Program Time | 2ms |
| Dual I/O Data Rate | 208 Mbits/s |
| Active Read Current | 1.3mA at 33MHz |
| Max Clock Frequency | 104MHz (fast read) |
| Program/Erase Current | 3.2mA |
| Deep Power-Down Current | 0.3μA |
| Page/Sector/Block Erase Time | 13ms |
ZD25WD20C Overview
Part: ZD25WD20C — ZETTA Technology Type: Serial Multi I/O Flash Memory Description: Ultra-low power 2M-bit serial flash memory with a wide supply range of 1.65V to 3.6V, supporting x1 and x2 Multi I/O SPI, with 100K cycling endurance and 20-year data retention.
Operating Conditions:
- Supply voltage: 1.65V to 3.6V
- Operating temperature: -40 to 85 °C
Absolute Maximum Ratings:
- Max supply voltage: 4.2 V
- Max junction/storage temperature: 150 °C
Key Specs:
- Memory density: 2M-bit (256KB)
- Standby current: 0.5 μA
- Deep power-down current: 0.3 μA
- Active read current (33MHz): 1.3 mA
- Active program/erase current: 3.2 mA
- Page program time: 2 ms
- 4K-byte sector erase time: 13 ms
- Program/Erase cycles: 100,000 minimum
- Data retention: 20 years
Features:
- Single and Dual IO mode (Standard SPI, Dual SPI)
- Highest performance speed: 104MHz (1 IO), 208Mbits/s (2 IO Dual I/O Data transfer)
- Flexible architecture: 256-byte Page Erase, 4K-byte Sector Erase, 32/64K-byte Block Erase
- Program 1 to 256 byte per programmable page
- Advanced security features: 128-Bit Unique ID for each device
- Data protection features: Valid command length checking, Write Enable command, Software Protection Mode, Deep Power-Down Mode
Applications:
Package:
- SOP8
- TSSOP8
- USON8 (2x3x0.45 mm)
- USON6 (1.2x1.2x0.40mm)
- USON6 (1.0x0.72x0.45mm)
- USON6 (1.225x0.725x0.45mm)
- KGD
ZD25WD20C Electrical Characteristics
Table-12. DC Parameters (Ta=-40 ° C to +85 ° C )
| Symbol | Parameter | Conditions | 1.65V to 3.6V | 1.65V to 3.6V | 1.65V to 3.6V | 2.3V to 3.6V | 2.3V to 3.6V | 2.3V to 3.6V |
|---|---|---|---|---|---|---|---|---|
| Min. | Typ. | Max. | Min. | Typ. | Max. | |||
| I DPD | Deep power down current | CS#=Vcc, all other inputs at 0V or Vcc | 0.3 | 3.5 | 0.3 | 3.5 | ||
| I SB | Standby current | CS#=Vcc, all other inputs at 0V or Vcc | 0.5 | 3.5 | 0.8 | 3.5 | ||
| I CC1 | Low power read current (03h) | f=1MHz; IOUT=0mA | 1.0 | 1.5 | 1.0 | 1.5 | ||
| I CC1 | Low power read current (03h) | f=33MHz; IOUT=0mA | 1.3 | 2.0 | 1.6 | 2.0 | ||
| I CC2 | Read current (0Bh) | f=50MHz; IOUT=0mA | 1.8 | 4.0 | 2.2 | 4.0 | ||
| I CC2 | Read current (0Bh) | f=85MHz; IOUT=0mA | 2.0 | 4.5 | 2.5 | 4.5 | ||
| I CC3 | Program current | CS#=Vcc | 3.2 | 5.5 | 4.0 | 5.5 | ||
| I CC4 | Erase current | CS#=Vcc | 3.0 | 5.0 | 4.0 | 5.0 | ||
| I LI | Input load current | All inputs at CMOS level | 1.0 | 1.0 | ||||
| I LO | Output leakage | All inputs at CMOS level | 1.0 | 1.0 | ||||
| V IL | Input low voltage | 0.2Vcc | 0.2Vcc | |||||
| V IH | Input high voltage | 0.8Vcc | 0.8Vcc | |||||
| V OL | Output low voltage | IOL=100μA | 0.2 | 0.2 | ||||
| V OH | Output high voltage | IOH=-100μA | Vcc- 0.2 | Vcc- 0.2 |
ZD25WD20C Absolute Maximum Ratings
Table-10 Absolute Maximum Ratings
| Parameter | Value | Unit |
|---|---|---|
| Ambient Operating Temperature | -40 to 85 | °C |
| Storage Temperature | -65 to 150 | °C |
| Applied Input / Output Voltage | -0.6 to VCC+0.4 | V |
| Transient Input / Output Voltage(note: overshoot) | -2.0 to VCC+2.0 | V |
| VCC | -0.6 to 4.2 | V |
Figure-30. Maximum Negative/positive Overshoot Diagram
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- ZD25WQ16CTIGT – Zetta, Serial Multi I/O NOR Flash
- AT25SL128A-MHE-T – Renesas Electronics, 128-Mbit SPI Serial NOR Flash
- W25Q32JVSSIQ – Winbond
- 23A1024 – Microchip Technology, Serial SRAM
- 23LC1024 – Microchip Technology, Serial SRAM
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