W25Q80BV

Serial Flash Memory

The W25Q80BV is a serial flash memory from Winbond. View the full W25Q80BV datasheet below including key specifications, electrical characteristics, absolute maximum ratings.

Official W25Q80BV datasheet (PDF) — the source this page was extracted from.

Manufacturer

Winbond

W25Q80BV Key Specifications

Parameter	Value
Device ID	13h
Page Size	256 bytes
Interfaces	SPI, Dual SPI, Quad SPI
Sector Size	4KB (256 sectors)
Active Current	4mA (as low as)
Memory Density	8M-bit (1MB)
Supply Voltage	2.7V to 3.6V
Manufacturer ID	EFh
Block Erase Sizes	32KB and 64KB (16 64KB blocks)
Available Packages	SOIC-8 150mil, SOIC-8 208mil, WSON-8 6x5mm, USON-8 2x3mm
Power-Down Current	1uA
Temperature Grades	Industrial Plus, Automotive Grade 3, Automotive Grade 2

W25Q80BV Overview

Part: W25Q80BV — Winbond

Type: Serial Flash Memory

Description: 8M-bit (1M-byte) Serial Flash memory with Dual and Quad SPI support, operating from 2.7V to 3.6V, featuring 80MHz clock speeds for up to 320MHz equivalent Quad I/O performance, and a wide operating temperature range for automotive and industrial applications.

Operating Conditions:

Supply voltage: 2.7V to 3.6V
Operating temperature: -40°C to +85/105/125°C
SPI clock frequency: Up to 80MHz

Absolute Maximum Ratings:

Key Specs:

Memory capacity: 8M-bit (1,048,576 bytes)
Page size: 256 bytes
Erase/Program cycles: >100,000 (Industrial temp), >10,000 (AEC-Q100 compliant)
Data retention: >20 years
Active current: 4mA
Power-down current: <1μA
Continuous data transfer rate: 40MB/S

Features:

Standard, Dual, and Quad SPI interfaces
Flexible architecture with 4KB sectors
Uniform Sector/Block Erase (4/32/64K-bytes)
Erase/Program Suspend & Resume
Software and Hardware Write-Protect
64-Bit Unique Serial Number
Discoverable Parameters (SFDP) Register
3x256-Byte Security Registers with OTP locks

Applications:

Code shadowing to RAM
Executing code directly from Dual/Quad SPI (XIP)
Storing voice, text and data
Automotive & Industrial Plus Grades

Package:

8-pin SOIC 150-mil (SN)
8-pin SOIC 208-mil (SS)
8-pad WSON 6x5-mm (ZP)
8-pad USON 2x3-mm (UX)

W25Q80BV Features

Family of SpiFlash Memories
W25Q80BV: 8M-bit/1M-byte (1,048,576)
256-byte per programmable page
Standard SPI: CLK, /CS, DI, DO, /WP, /Hold
Dual SPI: CLK, /CS, IO0, IO1, /WP, /Hold
Quad SPI: CLK, /CS, IO0, IO1, IO2, IO3

W25Q80BV Pin Configuration

W25Q80BV is offered in an 8-pin SOIC 150-mil or 208-mil (package code SN & SS), an 8-pad WSON 6x5mm (package code ZP), an 8-pad USON 2x3-mm (package code UX) as shown in Figure 1a-b respectively. Package diagrams and dimensions are illustrated at the end of this datasheet.

W25Q80BV Electrical Characteristics

PARAMETER	SYMBOL	CONDITIONS	SPEC	SPEC	SPEC	UNIT
PARAMETER	SYMBOL	CONDITIONS	MIN	TYP	MAX	UNIT
Input Capacitance	CIN (1)	VIN = 0V (1)			6	pF
Output Capacitance	Cout (1)	VOUT = 0V (1)			8	pF
Input Leakage	I LI				±2	μA
I/O Leakage	ILO				±2	μA
Standby Current	ICC1	/CS = VCC, VIN = GND or VCC		25	50	μA
Power-down Current	ICC2	/CS = VCC, VIN = GND or VCC		1	10	μA
Current Read Data / Dual /Quad 1MHz (2)	ICC3	C = 0.1 VCC / 0.9 VCC DO = Open		4/5/6	10	mA
Current Read Data / Dual /Quad 33MHz (2)	ICC3	C = 0.1 VCC / 0.9 VCC DO = Open		6/7/8	12	mA
Current Read Data / Dual /Quad 50MHz (2)	ICC3	C = 0.1 VCC / 0.9 VCC DO = Open		7/8/9	14	mA
Current Read Data / Dual Output Read/Quad Output Read 80MHz (2)	ICC3	C = 0.1 VCC / 0.9 VCC DO = Open		10/11/12	18	mA
Current Write Status Register	ICC4	/CS = VCC		8	15	mA
Current Page Program	ICC5	/CS = VCC		20	30	mA
Current Sector/Block Erase	ICC6	/CS = VCC		20	30	mA
Current Chip Erase	ICC7	/CS = VCC		20	30	mA
Input Low Voltage	VIL				VCC x 0.3	V
Input High Voltage	VIH		VCC x 0.7			V
Output Low Voltage	VOL	IOL = 100 μA			0.2	V
Output High Voltage	VOH	IOH = -100 μA	VCC - 0.2			V

Tested on sample basis and specified through design and characterization data. TA = 25° C, VCC = 3V.
Checker Board Pattern.

W25Q80BV Absolute Maximum Ratings

PARAMETERS	SYMBOL	CONDITIONS	RANGE	UNIT
Supply Voltage	VCC		-0.6 to +4.6	V
Voltage Applied to Any Pin	VIO	Relative to Ground	-0.6 to VCC+0.4	V
Transient Voltage on any Pin	VIOT	<20nS Transient Relative to Ground	-2.0V to VCC+2.0V	V
Storage Temperature	TSTG		-65 to +150	° C
Lead Temperature	TLEAD		See Note (2)	° C
Electrostatic Discharge Voltage	VESD	Human Body Model (3)	-2000 to +2000	V

This device has been designed and tested for the specified operation ranges. Proper operation outside of these levels is not guaranteed. Exposure to absolute maximum ratings may affect device reliability. Exposure beyond absolute maximum ratings may cause permanent damage.
Compliant with JEDEC Standard J-STD-20C for small body Sn-Pb or Pb-free (Green) assembly and the European directive on restrictions on hazardous substances (RoHS) 2002/95/EU.
JEDEC Std JESD22-A114A (C1=100pF, R1=1500 ohms, R2=500 ohms).

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