W25Q128JVEIM
Serial Flash MemoryThe W25Q128JVEIM is a serial flash memory from Winbond. View the full W25Q128JVEIM datasheet below including key specifications, electrical characteristics, absolute maximum ratings.
W25Q128JVEIM shares its datasheet with W25Q128JV, whose page lists every part number it covers.
Official W25Q128JVEIM datasheet (PDF) — the source this page was extracted from.
Manufacturer
WinbondCategory
Memory ICsW25Q128JVEIM Key Specifications
| Parameter | Value |
|---|---|
| Capacity | 128M-bit / 16M-byte |
| Page size | 256-bytes |
| Sector erase size | 4KB |
| Program-Erase cycles | Min. 100K per sector |
| Data retention | More than 20-year |
| Power-down current | <1μA (typ.) |
| Continuous data transfer rate | 66MB/S |
W25Q128JVEIM Overview
Part: W25Q128JV
Type: Serial Flash Memory
Description: 128M-bit (16M-byte) serial flash memory with Standard, Dual, and Quad SPI interfaces, supporting up to 133MHz clock frequency and operating from a 2.7V to 3.6V supply.
Operating Conditions:
- Supply voltage: 2.7V to 3.6V
- Operating temperature: -40°C to +85°C (Industrial Grade), -40°C to +105°C (Industrial Plus Grade)
- Max SPI clock frequency: 133MHz (Single, Dual/Quad SPI)
- Equivalent Dual/Quad SPI clock: 266MHz (Dual I/O), 532MHz (Quad I/O)
Absolute Maximum Ratings:
- Max supply voltage: 4.0V
- Max input/output voltage: VCC+0.4V (max 4.0V)
- Max storage temperature: +150°C
Key Specs:
- Capacity: 128M-bit / 16M-byte
- Page size: 256-bytes
- Sector erase size: 4KB
- Program-Erase cycles: Min. 100K per sector
- Data retention: More than 20-year
- Power-down current: <1μA (typ.)
- Continuous data transfer rate: 66MB/S
Features:
- New Family of SpiFlash Memories
- Flexible Architecture with 4KB sectors
- Standard, Dual, Quad SPI interfaces
- Software & Hardware Reset
- Highest Performance Serial Flash (133MHz clock, 266/532MHz equivalent Dual/Quad SPI)
- Efficient 'Continuous Read' with 8/16/32/64-Byte Wrap
- Low Power (<1μA Power-down)
- Uniform Sector/Block Erase (4K/32K/64K-Byte)
- Erase/Program Suspend & Resume
- Advanced Security Features (Write-Protect, OTP, Unique ID, Security Registers)
Applications:
- Code shadowing to RAM
- Executing code directly from Dual/Quad SPI (XIP)
- Storing voice, text and data
Package:
- 8-Pin SOIC 208-mil (Package Code S)
- 8-Pad WSON 6x5-mm (Package Code P)
- 8-Pad WSON 8x6-mm (Package Code E)
- 24-Ball TFBGA 8x6-mm (5x5-1 ball array, Package Code B)
- 24-Ball TFBGA 8x6-mm (6x4 ball array, Package Code C)
- 24-Ball WLCSP (Package Code Y)
W25Q128JVEIM Features
- New Family of SpiFlash Memories Flexible Architecture with 4KB sectors
- W25Q128JV: 128M-bit / 16M-byte
- Standard SPI: CLK, /CS, DI, DO
- Dual SPI: CLK, /CS, IO0, IO1
- Quad SPI: CLK, /CS, IO0, IO1, IO2, IO3
- Software & Hardware Reset (1)
- Highest Performance Serial Flash
- 133MHz Single, Dual/Quad SPI clocks
- 266/532MHz equivalent Dual/Quad SPI
- 66MB/S continuous data transfer rate
- Min. 100K Program-Erase cycles per sector
- More than 20-year data retention
- Efficient 'Continuous Read'
- Continuous Read with 8/16/32/64-Byte Wrap
- As few as 8 clocks to address memory
- Allows true XIP (execute in place) operation
- Low Power, Wide Temperature Range
- Single 2.7 to 3.6V supply
- <1μA Power-down (typ.)
- -40°C to +85°C operating range
- -40°C to +105°C operating range
- Uniform Sector/Block Erase (4K/32K/64K-Byte)
- Program 1 to 256 byte per programmable page
- Erase/Program Suspend & Resume
- Advanced Security Features
- Software and Hardware Write-Protect
- Power Supply Lock-Down
- Special OTP protection
- Top/Bottom, Complement array protection
- Individual Block/Sector array protection
- 64-Bit Unique ID for each device
- Discoverable Parameters (SFDP) Register
- 3X256-Bytes Security Registers with OTP locks
- Volatile & Non-volatile Status Register Bits
- Space Efficient Packaging
- 8-pin SOIC 208-mil
- 16-pin SOIC 300-mil (additional /RESET pin)
- 8-pad WSON 6x5-mm / 8x6-mm
- 24-ball TFBGA 8x6-mm (6x4/5x5 ball array)
- 24-ball WLCSP
- Contact Winbond for KGD and other options
Note: 1. Hardware /RESET pin is only available on TFBGA or SOIC16 packages
- 4 - Revision F
W25Q128JVEIM Pin Configuration
Figure 1a. W25Q128JV Pin Assignments, 8-pin SOIC 208-mil (Package Code S)
Figure 1a. W25Q128JV Pin Assignments, 8-pin SOIC 208-mil (Package Code S)
W25Q128JVEIM Electrical Characteristics
| PARAMETER | SYMBOL | CONDITIONS | SPEC | SPEC | SPEC | UNIT |
|---|---|---|---|---|---|---|
| PARAMETER | SYMBOL | CONDITIONS | MIN | TYP | MAX | UNIT |
| Input Capacitance | CIN (1) | VIN = 0V (1) | 6 | pF | ||
| Output Capacitance | Cout (1) | VOUT = 0V (1) | 8 | pF | ||
| Input Leakage | I LI | ±2 | μA | |||
| I/O Leakage | ILO | ±2 | μA | |||
| Standby Current | ICC1 | /CS = VCC, VIN = GND or VCC | 10 | 60 | μA | |
| Power-down Current | ICC2 | /CS = VCC, VIN = GND or VCC | 1 | 20 | μA | |
| Current Read Data / Dual /Quad 50MHz (2) | ICC3 | C = 0.1 VCC / 0.9 VCC DO = Open | 8 | 15 | mA | |
| Current Read Data / Dual /Quad 80MHz (2) | ICC3 | C = 0.1 VCC / 0.9 VCC DO = Open | 10 | 18 | mA | |
| Current Read Data / Dual /Quad 104MHz (2) | ICC3 | C = 0.1 VCC / 0.9 VCC DO = Open | 12 | 20 | mA | |
| Current Write Status Register | ICC4 | /CS = VCC | 20 | 25 | mA | |
| Current Page Program | ICC5 | /CS = VCC | 20 | 25 | mA | |
| Current Sector/Block Erase | ICC6 | /CS = VCC | 20 | 25 | mA | |
| Current Chip Erase | ICC7 | /CS = VCC | 20 | 25 | mA | |
| Input Low Voltage | VIL | -0.5 | VCC x 0.3 | V | ||
| Input High Voltage | VIH | VCC x 0.7 | VCC + 0.4 | V | ||
| Output Low Voltage | VOL | IOL = 100 μA | 0.2 | V | ||
| Output High Voltage | VOH | IOH = -100 μA | VCC - 0.2 | V |
- Tested on sample basis and specified through design and characterization data. TA = 25° C, VCC = 3.0V.
- Checker Board Pattern.
- 62 - Revision F
W25Q128JVEIM Absolute Maximum Ratings
| PARAMETERS | SYMBOL | CONDITIONS | RANGE | UNIT |
|---|---|---|---|---|
| Supply Voltage | VCC | -0.6 to 4.6 | V | |
| Voltage Applied to Any Pin | VIO | Relative to Ground | -0.6 to VCC+0.4 | V |
| Transient Voltage on any Pin | VIOT | <20nS Transient Relative to Ground | -2.0V to VCC+2.0V | V |
| Storage Temperature | TSTG | -65 to +150 | ° C | |
| Lead Temperature | TLEAD | See Note (2) | ° C | |
| Electrostatic Discharge Voltage | VESD | Human Body Model (3) | -2000 to +2000 | V |
- This device has been designed and tested for the specified operation ranges. Proper operation outside of these levels is not guaranteed. Exposure to absolute maximum ratings may affect device reliability. Exposure beyond absolute maximum ratings may cause permanent damage.
- Compliant with JEDEC Standard J-STD-20C for small body Sn-Pb or Pb-free (Green) assembly and the European directive on restrictions on hazardous substances (RoHS) 2002/95/EU.
- JEDEC Std JESD22-A114A (C1=100pF, R1=1500 ohms, R2=500 ohms).
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